• Title/Summary/Keyword: Dark current

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Electroluminescent Characteristics of Fluorescent OLED with Alternating Current Negative Voltage (교류 음 전압에 따른 형광 OLED의 전계 발광 특성)

  • Seo, Jung-Hyun;Yang, Jae-Woong;Paek, Kyeong-Kap;Ju, Sung-Hoo
    • Journal of the Korean institute of surface engineering
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    • v.52 no.2
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    • pp.72-77
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    • 2019
  • To study the characteristics of AC driven OLED, we fabricated the fluorescent OLEDs and analyzed the electroluminescence characteristics of OLEDs with AC negative voltage. The luminance and the current density of the OLED decreased, and the number and size of the dark spots increased in proportion to the duration time and level of the applied AC negative voltage. The current efficiency of the OLED was improved when high AC negative voltage was applied within a short time. When the AC negative voltage of 10 V was applied for 1 minute, the efficiency was improved by 12.4%. Also, the degradation of luminance and current efficiency due to the duration of light emission was improved in the case of OLED applied for 1 minute with 10 V AC negative voltage. These are expected as a result of the improvement of the leakage current characteristics by eliminating the short-circuit region formed by the defect of the OLED at the AC negative high voltage. As a result, the continuous application of AC negative voltage reduced the luminance and the current density of OLED, but the temporary application of AC negative voltage with the proper time and voltage could improve the efficiency and lifetime of OLED.

Characteristics of a-Si:H Multilayer for Contact-type Linear Image Sensor (밀착형 1차원 영상감지소자를 위한 a-Si:H 다층막의 특성)

  • Oh, Sang-Kwang;Kim, Ki-Wan;Choi, Kyu-Man
    • Journal of Sensor Science and Technology
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    • v.1 no.1
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    • pp.5-12
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    • 1992
  • We have fabricated a-Si:H multilayer for contact-type linear image sensor by means of RF glow discharge decomposition method. The ITO/i-a-Si:H/Al structure has relatively high dark current due to indium diffusion and carrier injection from both electrodes, resulting in low photocurrent to dark current. To suppress the dark current and to enhance interface electric field between ITO and i-a-Si:H film we have fabricated ITO/insulator/i-a-S:H/p-a-S:H/Al multilayer film with blocking structure. The photocurrent of ITO/$SiO_{2}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al multilayer sensor with 5V bias voltage became saturated at about 20nA under $20{\mu}W/cm^{2}$ light intensity, while the dark current was less than 0.1nA. To increase the light generation efficiency we have adopted ITO/$SiO_{x}N_{y}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al structure, showing photocurrent of 30nA and dark current of 0.08nA with 5V bias voltage. Also the spectral photosensitivity of the multilayer was enhanced for short wavelength visible region of 560nm, compared with that of the a-Si:H monolayer of 630nm. And its photoresponse time was about 0.3msec with the film homogeneity of 5% deviation.

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e-Science Paradigm for Astroparticle Physics at KISTI

  • Cho, Kihyeon
    • Journal of Astronomy and Space Sciences
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    • v.33 no.1
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    • pp.63-67
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    • 2016
  • The Korea Institute of Science and Technology Information (KISTI) has been studying the e-Science paradigm. With its successful application to particle physics, we consider the application of the paradigm to astroparticle physics. The Standard Model of particle physics is still not considered perfect even though the Higgs boson has recently been discovered. Astrophysical evidence shows that dark matter exists in the universe, hinting at new physics beyond the Standard Model. Therefore, there are efforts to search for dark matter candidates using direct detection, indirect detection, and collider detection. There are also efforts to build theoretical models for dark matter. Current astroparticle physics involves big investments in theories and computing along with experiments. The complexity of such an area of research is explained within the framework of the e-Science paradigm. The idea of the e-Science paradigm is to unify experiment, theory, and computing. The purpose is to study astroparticle physics anytime and anywhere. In this paper, an example of the application of the paradigm to astrophysics is presented.

Effects of Electric Current on Flowering in Pharbitis and Floral Stimulus activity in the Phloem Exudate of Cotyledons

  • Jueson Maeng
    • Journal of Plant Biology
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    • v.37 no.2
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    • pp.159-166
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    • 1994
  • Direct current (DC) applied to cotyledons during a 16 h inductive dark period inhibited the flowering in the short-day plant, Pharbitis nil Choisy cv. Violet. The inhibitory effect of DC was more profound when the current flowed from roots to cotyledons, showing its polarity-dependent action. The second half on the inductive dark period was more sensitive to DC stimulus. The flowering was significantly depressed only when DC stimuli were applied to the translocation path of the floral stimulus from the induced cotyledon to the apex, suggesting that the transport of floral stimulus was damaged by the DC treatment. The vegetative apex culture bioassay system showed that a significant level of the floral stimulus activity existed in the phloem exudate from the cotyledons which would fail to form their own floral buds. These results strongly support the hypothesis that DC partially impede, at least temporarily, the transmission path of the floral stimulus from florally-induced cotyledon to the apex, rather than depressing in situ synthesis of the floral stimulus.

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Development of Dark Current Sensor Core for Monitoring the Low-current of Automotive (자동차용 Dark Current 모니터링용 저전류 전류센서 마그네틱 Core 개발)

  • Choi, Jae-Young;Lee, Hee-Sung;Park, Jong-Min;Kim, Sung-Gaun
    • Proceedings of the KAIS Fall Conference
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    • 2012.05b
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    • pp.613-616
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    • 2012
  • 자동차 시장에서 늘어나는 전장부품으로 인하여 배터리 사용이 급증함에 따라 차량용 배터리가 암전류로 인하여 방전되는 사고가 급증하고 있다. 암전류로 인한 배터리 방전을 방지하기 위해 홀효과를 이용한 저전류 센서 마그네틱 Core를 개발한다. 본 논문은 Maxwell 전자기장 해석 툴을 이용하여 마그네틱 Core의 Airgap 위치와 간격 그리고 두께를 변수로 시뮬레이션을 하였다. 시뮬레이션 결과 저전류에서 기존의 홀효과를 이용한 전류 센서보다 높은 자속밀도가 발생하는 최적의 마그네틱 코어를 설계하였고 시제품을 제작하여 시뮬레이션 결과와 실제 실험결과를 비교분석 하였다.

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Analytical Model of Double Gate MOSFET for High Sensitivity Low Power Photosensor

  • Gautam, Rajni;Saxena, Manoj;Gupta, R.S.;Gupta, Mridula
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.5
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    • pp.500-510
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    • 2013
  • In this paper, a high-sensitivity low power photodetector using double gate (DG) MOSFET is proposed for the first time using change in subthreshold current under illumination as the sensitivity parameter. An analytical model for optically controlled double gate (DG) MOSFET under illumination is developed to demonstrate that it can be used as high sensitivity photodetector and simulation results are used to validate the analytical results. Sensitivity of the device is compared with conventional bulk MOSFET and results show that DG MOSFET has higher sensitivity over bulk MOSFET due to much lower dark current obtained in DG MOSFET because of its effective gate control. Impact of the silicon film thickness and gate stack engineering is also studied on sensitivity.

Measurement of Vacuum Pressure by Electron Emission from Carbon Nanotube Emitters (탄소나노튜브 전극으로부터 전자방출에 의한 진공도 측정)

  • Kim, Seong-Jeen;Cho, Kyu-Hwan;Kim, Seong-Yeob;Jeon, Jae-Ok;Lee, Sang-Hoon;Choi, Bok-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.5
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    • pp.396-400
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    • 2005
  • Carbon nanotubes (CNTs) have been well known as electron emitters for field emission applications like FEDs. In this work, we propose as new application a vacuum sensor using CNTs and discuss its current-voltage characteristics as a function of vacuum pressure. The proposed sensor, based on electrical discharge theories in air gap well-known as Townsend theory and as Paschen's law, works by figuring out the variation of the dark current and the initial breakdown voltage depending on the vacuum pressure of air which can ionize through collisions with the electrons accelerated by high electric field.

Interfacial Properties of a-Se Thick Films to Solve Charge Trap and Injection Problems (전하 트랩 및 주입 문제를 해결하기 위한 비정질 셀레늄 필름의 계면 특성)

  • 조진욱;최장용;박창희;김재형;이형원;남상희;서대식
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.497-500
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    • 2001
  • Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

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Analysis of Dark Data of the PICNIC IR Arrays in the CIBER

  • Lee, D.H.;Kim, M.G.;Tsumura, K.;Zemcov, M.;Nam, U.W.;Bock, J.;Battle, J.;Hristov, V.;Renbarger, T.;Matsumoto, T.;Sullivan, I.;Levenson, L.R.;Mason, P.;Matsuura, S.;Kim, G.H.
    • Journal of Astronomy and Space Sciences
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    • v.27 no.4
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    • pp.401-406
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    • 2010
  • We have measured and analyzed the dark data of two PICNIC IR arrays (P574 and P560) obtained through the Cosmic Infrared Background ExpeRiment (CIBER). First, we identified three types of bad pixels: the cold, the hot, and the transient, which are figured in total as 0.06% for P574 and 0.19% for P560. Then, after the bad pixels were masked, we determined the dark noise to be 20.5 ${\pm}$ 0.05 $e^-$ and 16.1 ${\pm}$ 0.05 $e^-$, and the dark current to be 0.6 ${\pm}$ 0.05 $e^-$/sec and 0.7 ${\pm}$ 0.05 $e^-$/sec for P574 and P560, respectively. Finally, we discussed glitches and readout modes for a future mission.

Dark Matter Deficient Galaxies Produced via High-velocity Galaxy Collisions In High-resolution Numerical Simulations

  • Shin, Eun-jin;Jung, Minyong;Kwon, Goojin;Kim, Ji-hoon;Lee, Joohyun;Jo, Yongseok;Oh, Boon Kiat
    • The Bulletin of The Korean Astronomical Society
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    • v.45 no.1
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    • pp.34.1-34.1
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    • 2020
  • The recent discovery of diffuse dwarf galaxies that are deficient in dark matter appears to challenge the current paradigm of structure formation in our Universe. We describe the numerical experiments to determine if the so-called dark matter deficient galaxies (DMDGs) could be produced when two gas-rich, dwarf-sized galaxies collide with a high relative velocity of ~ 300km/s. Using idealized high-resolution simulations with both mesh-based and particle-based gravito-hydrodynamics codes, we find that DMDGs can form as high-velocity galaxy collisions separate dark matter from the warm disk gas which subsequently is compressed by shock and tidal interaction to form stars. Then using a large simulated universe ILLUSTRISTNG, we discover a number of high-velocity galaxy collision events in which DMDGs are expected to form. However, we did not find evidence that these types of collisions actually produced DMDGs in the ILLUSTRISTNG100-1 run. We argue that the resolution of the numerical experiment is critical to realize the "collision-induced" DMDG formation scenario. Our results demonstrate one of many routes in which galaxies could form with unconventional dark matter fractions.

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