• Bulletin of the Korean Space Science Society
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• 2003.10a
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• pp.101-101
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• 2003

다목적 실용위성 1호에 탑재된 EOC(Electro-Optical Camera)는 2,000년부터 현재까지 한반도 인근 및 세계의 주요 육지 지역을 관측하고 있다. DOC는 크게 광학부(Sensor Assembly)와 전자부(Electronics Assembly)로 구성되어 있으며, 지상으로부터 입사하는 광 정보를 디지털 신호로 재구성하여 PDTS(Payload Data Transmission System)을 통해 지상으로 전송한다. EOC 광학부는 2,592개의 CCD(Charge-Coupled Device) 센서들로 구성된 선형 시스템이며, push-broom 주사 방식으로 구동된다. 한편, EOC의 임무 전, 후로 Aperture Cover Mechanism에 의해 EOC의 덮개를 덮은 상태로 짧은 시간동안 촬영을 수행, 획득된 영상 역시 지상으로 전송한다. 이러한 영상들은 EOC 영상에 포함되어 있는 암전류(Dark Current)에 대한 간접적인 정보를 제공하며, Dark Calibration Data로 정의된다. Dark Calibration Data는 지상에서 수신된 후, EOC 영상에 대한 복사 보정에 이용된다. 본 연구에서는 EOC Dark Calibration Data에 대한 분석을 통해, EOC 영상 내의 잡음 성분을 분석한다.

• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.10-14
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• 2003

In this paper, we have introduced the x-ray detector built with a CsI:Na scintillation layer deposited on amorphous selenium. To determine the thickness of the CsI:Na layer, we have estimated the transmission spectra and the absorption of continuous x-rays in diagnostic range by using computer simulation (MCNP 4C). A x-ray detector with 65 ${\mu}m$-CsI:Na/30 ${\mu}m$-Se layer has been fabricated by a thermal evaporation technique. SEM and PL measurements have been performed. The dark current and x-ray sensitivity of the fabricated detector has been compared with that of the conventional a-Se detector with 100 ${\mu}m$ thickness. Experimental results show that both detectors exhibit a similar dark current, which was of a low value below $400 pA/cm^2$ at 10 V/${\mu}m$. However, the CsI:Na-Se detector indicates high x-ray sensitivity, roughly 1.3 times that of a conventional a-Se detector. Furthermore, a CsI:Na-Se detector with an aluminium reflective layer shows a 1.8 times higher x-ray sensitivity than an a-Se detector. The hybrid type detector proposed in this work exhibits a low dark current and high x-ray sensitivity, and, in particular, excellent linearity to the x-ray exposure dose.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.2
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• pp.322-329
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• 2007

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has been designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

• Publications of The Korean Astronomical Society
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• v.30 no.2
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• pp.309-313
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• 2015

If the present universe is slightly open then pre-inflation curvature would appear as a cosmic dark-flow component of the CMB dipole moment. We summarize current cosmological constraints on this cosmic dark flow and analyze the possible constraints on parameters characterizing the pre-inflating universe in an inflation model with a present-day very slightly open ${\Lambda}CDM$ cosmology. We employ an analytic model to show that for a broad class of inflation-generating effective potentials, the simple requirement that the observed dipole moment represents the pre-inflation curvature as it enters the horizon allows one to set upper and lower limits on the magnitude and wavelength scale of pre-inflation fluctuations in the inflaton field and the curvature parameter of the pre-inflation universe, as a function of the fraction of the total initial energy density in the inflaton field. We estimate that if the current CMB dipole is a universal dark flow (or if it is near the upper limit set by the Planck Collaboration) then the present constraints on ${\Lambda}CDM$ cosmological parameters imply rather small curvature ${\Omega}_k{\sim}0.1$ for the pre-inflating universe for a broad range of the fraction of the total energy in the inflaton field at the onset of inflation. Such small pre-inflation curvature might be indicative of open-inflation models in which there are two epochs of inflation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.3
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• pp.15-30
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• 2004

In this paper, an analytical modeling for the dark and photo-current characteristics of a buried-gate short- channel GaAs MESFET is presented. The presented model shows that the increase of drain current under illumination is largely due to not the increase of photo-conductivity in the neutral region but the narrowing effect of the depletion layer width. The carrier density profile within the neutral region is derived from solving the carrier continuity equation one-dimensionally. In deriving the photo-generated current, we assume that the photo-current is compensated with the thermionic emission current at the gate-channel interface. Moreover, the two-dimensional Poisson's equation is solved by taking into account the drain-induced longitudinal field effect. In conclusion, the proposed model seems to provide a reasonable explanation for the dark and photo current characteristics in a unified manner.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.276-283
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• 2017

A polysilicon-based metal-semiconductor-metal (MSM) photodetector was fabricated by means of our new methods. Its photoresponse characteristics were analyzed to see if it could be applied to a sensor system. The processes on which this study focused were an alloy-annealing process to form metal-polysilicon contacts, a post-annealing process for better light absorption of as-deposited polysilicon, and a passivation process for lowering defect density in polysilicon. When the alloy annealing was achieved at about $400^{\circ}C$, metal-polysilicon Schottky contacts sustained a stable potential barrier, decreasing the dark current. For better surface morphology of polysilicon, rapid thermal annealing (RTA) or furnace annealing at around $900^{\circ}C$ was suitable as a post-annealing process, because it supplied polysilicon layers with a smoother surface and a proper grain size for photon absorption. For the passivation of defects in polysilicon, hydrogen-ion implantation was chosen, because it is easy to implant hydrogen into the polysilicon. MSM photodetectors based on the suggested processes showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and are therefore applicable to sensor systems.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.431-435
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• 2002

The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.

• Korean Journal of Optics and Photonics
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• v.7 no.4
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• pp.440-444
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• 1996

In this paper, we report an InGaAs/InAlAs multi-quantum well (MQW) avalanche photodiode (APD) showing a performance suitable for 10 Gbps lightwave communications. In designing the device, emphasis is given on the effect of indiffusion of Be dopant from the highly doped field layer into the MQW multiplication region. It is found that a small amount of diffusion can alter the dark current and gain characteristics of the device significantly. A spacer used to restrain such indiffusion is shown effective in reducing dark current (500 nA at a gain of 10) while maintaining a high bandwidth (10 GHz at a gain of 10) devices grown by molecular beam epitaxy.

• Proceedings of the KOSOMBE Conference
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• v.1998 no.11
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• pp.293-294
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• 1998

In this paper, the electric properties of amorphous selenium specimen has been investigated. Amorphous selenium was thermally evaporated on the glass plate which had been deposited onto the interface by aluminium as an electrode. On the surface of the amorphous selenium, the aluminium electrode was deposited again in order to make an unit cell for dark current measurement. The dark current was measured while applying the bias voltage across the selenium layer in the range of 0V-2500 Volts. The leakage property of the amorphous selenium was significantly low at even high voltage range so it has good advantage as a X-ray receptor for digital radiography. For further study, the C-V curves measurement according to thicker amorphous selenium layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.3-4
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• 2008

Photovoltaic module consists of serially connected solar cell which has low voltage characteristics. But, the other way, the whole current flow of PV module is restricted by lowest current of one solar cell. For the experiment, we make PV module composing the solar cells that have short circuit current difference of 0%, 1%, 3% and 5%. Using Light I-V and Dark I-V measurements, electrical characteristic parameters like Isc(short-circuit current), Voc(open-circuit voltage), Rs(series resistance), Rsh(shunt resistance) are analyzed. PV module of low current characteristics has electrical stress from other modules. And, such a module has a tendency of hot-spot suffering which leads degradation.