• Title/Summary/Keyword: Dark current

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Radiometric Calibration Method of the GOCI (Geostationary Ocean Color Imager)

  • Kang, Gumsil;Myung, Hwan-Chun;Youn, Heong-Sik
    • Proceedings of the KSRS Conference
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    • v.1
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    • pp.60-63
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    • 2006
  • Geostationary Ocean Color Imager (GOCI) is under development to provide a monitoring of oceancolor around the Korean Peninsula from geostationary platforms. It is planned to be loaded on Communication, Ocean, and Meteorological Satellite (COMS) of Korea. In this paper radiometric calibration concept of the GOCI is introduced. The GOCI radiometric response is modeled as a nonlinear system in order to reflect a nonlinear characteristic of detector. In this paper estimation approaches for radiometric parameters of GOCI model are discussed. For the GOCI, the offset signal depends on each spectral channel because dark current offset signal is a function of integration time which is different from channel to channel. The offset parameter can be estimated by using offset signal measurements for two integration time setting is described.

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The Analysis of Electrical Characteristics of PV Module according to Mechanical Load Test (태양전지모듈의 기계적 하중시험에 따른 전기적 특성 분석)

  • Kim, Kyung-Soo;Kang, Gi-Hwan;Yu, Gwon-Jong
    • 한국태양에너지학회:학술대회논문집
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    • 2008.04a
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    • pp.247-251
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    • 2008
  • In this paper. we analyze electrical characteristics of photovoltaic module according to mechanical load test. Using the equipment for giving load on the surface of module, dark current-voltage is measured. By varying load from 0kg to 206kg, slight different I-V curve is detected. From this, reduced shunt resistance is roughly calculated and micro crack is assumed to be happened. system Through this experiment, periodic external force on PV module might give an negative effect. The detailed analysis is described in the following paper.

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Characteristics of a-Si:H Films for Contact-type Linear Image Sensor (밀착형 선형 영상감지소자를 위한 a-Si:H막의 특성)

  • 오상광;박욱동;김기완
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.28A no.11
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    • pp.894-901
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    • 1991
  • Contact-type linear image sensors have been fabricated by means of RF glow discharge decomposition method of silane and hydrogen mixtures. The dependences of the electrical and optical properties of these sensor on thickness, RF power, substrate temperature and ambient gas pressure have been investigated. the ITO/i-a-Si:H/Al structure film shows photosensitivity of 0.85 and photocurrent to dark current ratio ($I_{ph}/I_{d}$) of 150 at 5V bias voltage under 200${\mu}W/cm^[2}$ red light intensity. Under 200${\mu}W/cm^[2}$ green light intensity, the ratio is 100. In order to investigate photocarrier transport mechanism and to obtain ${\mu}{\gamma}$ product we have measured the I-V characteristics of these sensors favricated with several different deposition parameters under various light sources. The linear inage sensor for document reading has been operated under reverse bias condition with green light source, resulting in ${\mu}{\gamma}$ product of about 1.5$[\times}10^{-9}cm^{2}$/V.

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A Fabrication and Characteristics of GaInAs/InP PIN Phtodiode Grown by LPE (LPE에 의한 GaInAs/InP PIN Photodiode의 제작 및 특성)

  • 박찬용;남은수;박경현;김상배;박문수;이용탁;홍창희
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.5
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    • pp.737-746
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    • 1990
  • Ga0.47In0.53As PIN photodiodes(PD) having various areas have been fabricated by liquid phase epitaxial techniques. Ternary melt has been baked out at 675\ulcorner in H2 atmosphere for 20 hours before growth, which resulted in reduction of background carrier concentration of grown epi-layer. Also, lattice mismatch has been controlled within 0.01%. The room temperature performance of 10**-4cm\ulcornerarea PIN PD at a bias voltage of -5V were` quantum efficiency(with no antireflection coating)=60% for 1.3\ulcorner light source, dark current\ulcorner5nA, and capacitance\ulcornerpE. Frequency response measurement of packaged PIN PD has shown that cut-off frequency (f-3dB) was 961MHz. This PD has shown a good eye pattern when it was incorporated in a 565Mbps optical receiver.

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Star formation in high redshift early-type galaxies

  • Gobat, Raphael;Daddi, Emanuele;Magdis, Georgios;Bournaud, Frederic;Sargent, Mark;Martig, Marie;Jin, Shuowen;Hwang, Ho Seong
    • The Bulletin of The Korean Astronomical Society
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    • v.42 no.2
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    • pp.40.1-40.1
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    • 2017
  • Massive early-type galaxies (ETG) have been spectroscopically confirmed up to z>3 which, together with their ages and abundances at z>1.5, implies that their progenitors must have converted gas into stars on short timescales. The termination of star formation in these galaxies can occur through several channels, but they remain largely conjectural, in part due to the current lack of direct measurements of the amount of residual gas in high redshift ETGs. Here I will present constraints on the star formation rate and dust/gas content of z=1.4-2.5 ETGs. These galaxies, close to their epoch of quenching, contained more than 2 orders of magnitude more dust than their local counterparts, which suggests the presence of substantial amounts of gas and a low star formation efficiency.

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Photoluminescence of Porous Silicon Carbide in Solvents

  • Lee, Ki-Hwan;Lee, Tae-Ho;Yoon, Seok-Won;Lee, Seung-Koo;Jeon, Hae-Kwon;Choi, Chang-Shik
    • Journal of Photoscience
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    • v.12 no.3
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    • pp.171-174
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    • 2005
  • The relationship between porous surfaces and photoluminescence (PL) behavior of porous silicon carbide (PSC) in various solvents has been studied. The porous surfaces of p-type silicon carbide can be fabricated by electrochemical anodization from the 6H, 15R, 4H-${\alpha}$-SiC substrates in dark-current mode (DCM) condition. We have been investigated the dependence of the PL spectra of PSC under the medium having the different dielectric constants. It has been found that PL depends sensitively on the environment surrounding the surface. The extent of chemically stability on the surface of PSC due to the various solvents was confirmed by reflectance Fourier transform infrared (FTIR) spectroscopy. Detailed IR experiments on the PSC samples were carried out before and after various solvents immersion. These results will be offered important information on the origin of PL in porous structure.

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Dark Conductivity in Semi-Insulating Crystals of CdTe:Sn

  • Makhniy, V.P.;Sklyarchuk, V.M.;Vorobiev, Yu.V.;Horley, P.P.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.2
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    • pp.243-248
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    • 2015
  • We prepared semi-insulating CdTe for radiation detectors by isothermal annealing of single crystals grown by Bridgeman technique in a sealed quartz container filled with Sn vapor. The resistivity of CdTe:Sn samples thus obtained was of order of $10^{10}Ohm{\cdot}cm$ at room temperature with electrons lifetime of $2{\times}10^{-8}$ s, which is appropriate for the applications desired. Analysis of electric transport characteristics depending on temperature, sample thickness and voltage applied revealed the presence of traps with concentration of about $(4-5){\times}10^{12}cm^{-3}$ with the corresponding energy level at 0.8 - 0.9 eV counted from the bottom of conduction band. The conductivity was determined by electron injection from electrodes in space charge limited current mode.

Solution-processed Organic Trilayer Solar Cells Incorporating Conjugated Polyelectrolytes

  • Cha, Myoung Joo;Walker, Bright;Seo, Jung Hwa
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.192.1-192.1
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    • 2014
  • We report solution-processed organic trilayer solar cells consisting of poly (3-hexylthiophene) (P3HT), a conjugated polyelectrolyte (CPE) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), wherein the effect CPE layer thickness on device properties was investigated. The current-voltage characteristics under illumination and dark as well as photoluminescence were characterized using various concentrations (0.02, 0.1, and 0.3wt%) of to deposit the CPE interlayer between the donor and acceptor layers. We also investigated the influence of molecular dipole moments in the trilayer solar cells by external stimuli. These results provide an experimental approach for investigating the influence of interfacial dipoles on solar cell parameters when placed between the donor and acceptor and allow us to obtaining fundamental information about the donor/acceptor interface in organic solar cells.

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Latent Charge Erasing Technique for a-Se Digital X-ray Detector (비정질 셀레늄 디지털 X선 검출기에 대한 잔류 전하 제거 기술)

  • Kang, S.S.;Choi, J.Y.;Park, J.K.;Cho, J.W.;Moon, C.W.;Choi, H.K.;Nam, S.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.505-508
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    • 2001
  • Currently there is much interested in removing latent charge that is caused to latent image effect and blurring of obtained image as well as reduction of x-ray conversion efficiency in digital radiography system. To remove latent charge a-Se film is irradiated by light with 3500 lux using halogen lamp and optical fiber. We measured dark current and photosensitivity to analyze removing effect of latent charge, then compared with and without light erasing method. The reduction of measured signal due to latent charge effect was 32.5 %, and the removal effect of latent charge by using light erase method was its 95.5 %.

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ERROR ANALYSIS FOR GOCI RADIOMETRIC CALIBRATION

  • Kang, Gm-Sil;Youn, Heong-Sik
    • Proceedings of the KSRS Conference
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    • 2007.10a
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    • pp.187-190
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    • 2007
  • The Geostationary Ocean Color Imager (GOCI) is under development to provide a monitoring of ocean-color around the Korean Peninsula from geostationary platforms. It is planned to be loaded on Communication, Ocean, and Meteorological Satellite (COMS) of Korea. The GOCI has been designed to provide multi-spectral data to detect, monitor, quantify, and predict short term changes of coastal ocean environment for marine science research and application purpose. The target area of GOCI observation covers sea area around the Korean Peninsula. Based on the nonlinear radiometric model, the GOCI calibration method has been derived. The nonlinear radiometric model for GOCI will be validated through ground test. The GOCI radiometric calibration is based on on-board calibration devices; solar diffuser, DAMD (Diffuser Aging Monitoring Device). In this paper, the GOCI radiometric error propagation is analyzed. The radiometric model error due to the dark current nonlinearity is analyzed as a systematic error. Also the offset correction error due to gain/offset instability is considered. The radiometric accuracy depends mainly on the ground characterization accuracies of solar diffuser and DAMD.

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