• Title/Summary/Keyword: Daeduk Science Town

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Bending Properties of the Flexible BMNO (Bi2Mg2/3Nb4/3O7) Capacitor Using Graphene Electrode (그래핀 전극을 이용한 유연한 BMNO (Bi2Mg2/3Nb4/3O7) 캐패시터의 굽힘 특성)

  • Song, Hyun-A;Park, Byeong-Ju;Yoon, Soon-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.5
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    • pp.387-391
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    • 2012
  • Graphene was fabricated onto Ni/Si substrate using a rapid-thermal pulse CVD and they were transferred onto the Ti/PES flexible substrate. For top electrode applications of the BMNO dielectric films, graphene was patterned using a argon plasma. Through an AFM image and a leakage current density of the BMNO films grown onto various bottom electrodes before and after bending test, BMNO films grown onto the graphene bottom electrode showed no change of the microstructure and the leakage current density after the bend.

Thermal Stability and Electrical Properties of HfOxNy Gate Dielectrics with TaN Gate Electrode

  • Kim Jeon-Ho;Choi Kyu-Jeong;Seong Nak-Jin;Yoon Soon-Gil;Lee Won-Jae;Kim Jin-dong;Shin Woong-Chul;Ryu Sang-Ouk;Yoon Sung-Min;Yu Byoung-Gon
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.3
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    • pp.34-37
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    • 2003
  • [ $HfO_2$ ] and $HfO_xN_y$ films were deposited by plasma-enhanced chemical vapor deposition using $Hf[OC(CH_3)_3]_4$ as the precursor in the absence of $O_2$. The crystallization temperature of the $HfO_xN_y$ films is higher than that of the $HfO_2$ film. Nitrogen incorporation in $HfO_xN_y$ was confirmed by auger electron spectroscopy analysis. After post deposition annealing (PDA) at 800$\Box$, the EOT increased from 1.34 to 1.6 nm in the $HfO_2$ thin films, whereas the increase of EOT was suppressed to less than 0.02 nm in the $HfO_xN_y$. The leakage current density decreased from 0.18 to 0.012 $A/cm^2$ with increasing PDA temperature in the $HfO_2$ films. But the leakage current density of $HfO_xN_y$ does not vary with increasing PDA temperature because an amorphous $HfO_xN_y$ films suppresses the diffusion of oxygen through the gate dielectric.

Ferroelectric $SrBi_2Ta_2O_9$ Thin Films by Liquid-Delivery Metalorganic Chemical Vapor Deposition using $Sr[Ta(OEt)_5(dmae)]_2$ and $Bi(C_6H_5)_3$

  • Shin, Wonng-Chul;Choi, Kyu-Jeong;Park, Chong-Man;Yoon, Soon-Gil
    • The Korean Journal of Ceramics
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    • v.6 no.3
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    • pp.219-223
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    • 2000
  • The ferroelectric SBT films were deposited on Pt/Ti/SiO$_2$/Si substrates by liquid injection metalorganic chemical vapor deposition (MOCVD) with single-mixture solution of Sr[Ta(OEt)$_5$(dmae)]$_2$and Bi(C$_6$ 6/H$_5$)$_3$. The Sr/Ta and Bi/Ta ratio in SBT films depended on deposition temperature and mol ratio of precursor in the single-mixture solution. At the substrate temperature of 40$0^{\circ}C$, Sr/Ta and Bi/Ta ratio were close to 0.4 and 1 at precursor mol ratio of 0.5~1.0, respectively. As-deposited film was amorphous. However, after annealing at 75$0^{\circ}C$ for 30 min in oxygen atmosphere, the diffraction patterns indicated polycrystalline SBT phase. The remanent polarization (Pr) and coercive field (Ec) of SBT film annealed at 75$0^{\circ}C$ were 4.7$\mu$C/$\textrm{cm}^2$ and 115.7kV/cm at an applied voltage of 5V, respectively. The SBT films annealed at 75$0^{\circ}C$ showed practically no polarization fatigue up to 10$^10$ switching cycles.

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Dependence of GMI Profile on Size of Co-based Amorphous Ribbon

  • Jin, L.;Yoon, S.S.;Kollu, P.;Kim, C.G.;Suhr, D.S.;Kim, C.O.
    • Journal of Magnetics
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    • v.12 no.1
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    • pp.31-34
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    • 2007
  • The Co-based ribbons with different length were annealed in different magnetic field and GMI profiles were investigated in order to clarify the influence of ribbon size on GMI effect. The GMI ratio decreased with the decreasing in length and also decreased with increasing annealing field. While, the slope of GMI profiles inclined and the field range showing linearity was broadened. It shows prospect to low field sensor, especially for a navigation sensor.

Preparation of ferroelectric SrBi2Ta2O9 thin films deposited by multi-target sputtering

  • Hoon, Yang-Cheol;Gil, Yoon-Soon
    • Journal of Korean Vacuum Science & Technology
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    • v.2 no.2
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    • pp.92-96
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    • 1998
  • Ferroelectric Bi-layered oxides SrBi2Ta2O9 (SBT) thin films have been deposited on Pt/Ti/SiO2/Si substrates using multi-target sputtering. Structure, composition, and electrical properties have been investigated on films. The SBT films were deposited with the various bismuth sputtering powers. The SBT films deposited with the bismuth sputtering power of 20 W have the most dense microstructure and the remanent polarization (Pr) of 9.2 ${\mu}$C/cm and the coercive field (Ec) of 43.8 kV/cm at an applied voltage of 5V. The SBT films deposited with the bismuth sputtering power of 20W showed a fatigue-free characteristics up to 1.0${\times}$1010 cycles under 5V bipolar pulse and a leakage current density of 2.0${\times}$10-8 A/$\textrm{cm}^2$ at 200 kV/cm.

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A dual approach to input/output variance constrained control problem

  • Kim, Jac-Hoon
    • 제어로봇시스템학회:학술대회논문집
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    • 1994.10a
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    • pp.28-33
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    • 1994
  • An optimal controller, e.g. LQG controller, may not be realistic in the sense that the required control power may not be achieved by existing actuators, and the measured output is not satisfactory. To be realistic, the controller should meet such constraints as sensor or actuator limitation, performance limit, etc. In this paper, the lnput/Output Variance Constrained (IOVC) control problem will be considered from the viewpoint of mathematical programming. A dual version shall be developed to solve the IOVC control problem, whose objective is to find a stabilizing control law attaining a minimum value of a quadratic cost function subject to the inequality constraint on each input and output variance for a stabilizable and detectable plant. One approach to the constrained optimization problem is to use the Kuhn-Tucker necessary conditions for the optimality and to seek an optimal point by an iterative algorithm. However, since the algorithm uses only the necessary conditions, the convergent point may not be optimal solution. Our algorithm will guarantee a sufficiency.

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An Introduction to Daeduk Science Town Network (대덕 지역 정보 통신망 개요)

  • 정선종
    • Proceedings of the Korean Institute of Communication Sciences Conference
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    • 1988.10a
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    • pp.141-143
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    • 1988
  • 대덕 연구 단지를 시범 대상으로 하여 구축되는 본 지역 정보 통신망은 IEEE 802.5 규격을 사용하여 광접속 장치 및 망접속 장치를 개발하고 시범망을 구축하여 테스트를 수행하며, 전송매체나 node의 fault 시 loop 를 형성하거나 고장난 지점을 bypass 시키는 기능이 잇어 망의 신뢰도를 향상시킬 수 있다. 또한 다양한 서비스 제공을 위하여 프로토콜 계층 구조는 OSI의 7 layer 개념을 기초로 하여 여러 이기종 컴퓨터를 접속할 수 있도록 구성한다.

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Application of QUAL2K Model for Daejeon Tandongcheon, A Small Urban Stream and Evaluation of Terrace Land Constructed Wetland (도시 소하천, 대전 탄동천, 수질개선 대안 수립을 위한 QUAL2K 수질모델 구축과 제외지 인공습지공법 적용 효율 평가)

  • Yin, Zhenhao;Seo, Dongil
    • Journal of Korean Society of Environmental Engineers
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    • v.35 no.3
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    • pp.192-199
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    • 2013
  • The Tandong-cheon stream is a 7.4 km long small urban stream that passes through Daeduk Science Town in Daejeon Korea. Despite the stream has great potential as an educational and recreational site due to its central location in the science town and science museums nearby, environmental aspect especially for water quality has not been evaluated properly. Through field survey, major pollution sources of the stream were identified and effect of water quality improvement alternatives were evaluated using a QUAL2K water quality model for the stream. The study indicated that controlling major pollution sources of the stream alone may not be sufficient for reaching the water quality target. Therefore, additional pollution control methods are necessary. We applied the developed model to evaluate the effects of a constructed wetland on the terrace land, and analyzed whether the water quality target can be met at the outlet of the stream. It is expected that this study would provide a good reference for environmentally sound management of small urban streams in Korea.

Development of IP address translator for Virtual Group network service (Virtual Group 네트워크 서비스 제공을 위한 IP 주소 변환 시스템 개발)

  • Choi, Jin-Young;Lee, Seung-Pyo
    • The Transactions of the Korea Information Processing Society
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    • v.5 no.6
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    • pp.1603-1609
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    • 1998
  • In this paper, we present a development of IP addresstranslator for virtual group network service and an application to Korea Information Infrastructure Pilot projects in Daeduk Science town network, This method can be a way to provide network service for limited virtual groups which are connected to a specialized network. Also this can be used to provide a new network environment for closed user groups in Intranet applications.

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Characteristics of Double-junction of High-$\textrm{T}_{c}$ Superconducting $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$ Step-edge Junctions (고온 초전도 $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$ 계단형 모서리 접합의 이중접합 특성)

  • Hwang, Jun-Sik;Seong, Geon-Yong;Gang, Gwang-Yong;Yun, Sun-Gil;Lee, Gwang-Ryeol
    • Korean Journal of Materials Research
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    • v.9 no.1
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    • pp.86-91
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    • 1999
  • We have fabricated high-$\textrm{T}_c$ superconducting $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$(YBCO) grain boundary junctions at a step-edge on (001) $\textrm{SrTiO}_3$(STO) substrates. A diamond-like carbon (DLC) film grown by plasma enhanced chemical vapor deposition were used as an ion milling mask to make steps on the STO (100) single crystal and was removed by an oxygen reactive ion etch process. The c-axis oriented YBCO and TO thin films were deposited epitaxially on the STO substrate with a step-edge by pulsed laser deposition. The grain boundary junctions were formed at the top and the bottom of the step. The junctions worked at temperatures above 77 K, and had I\ulcornerR\ulcorner products of 7.5mV at 16K and 0.3 mV at 77K, respectively. The I-V characteristics of these junctions showed the shape of the two noisy resistively shunted junction model.

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