• 정보와 통신
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• 제15권11호
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• pp.124-142
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• 1998

ETSI BRAN (Broadband Radio Access Network)는 고속 무선 LAN 또는 고정 광대역 무선액세스 네트워크에서의 무선 접촉 계층과 ATM 및 IP(Internet Protocol) 코어 네트워크와의 연동을 위한 일부 기능을 표준화하기 위한 과제이다. 특히, BRAN의 HIPERLAN type-2(HIPERLAN/2)의 경우에는 과제의 범위는 무선 접속면, 무선 부시스템에서의 서비스 인터페이스, 서비스 구현에서 요구되는 연동 및 각종 지원 기능을 표준화하며, 무선 접속면의 경우에는 다수 벤더간의 상호 호환성을 제공할 수 있는 인터페이스를 구현하는 것이다. HIPERLAN/2의 기술 규격은 코어 네트워크와 독립적인 물리계층 및 데이터 링크 제어 (DATA Link Control: DLC) 계층과 서로 상이한 코어 네트워크와의 연동을 위한 네트워크 수렴 부계층을 다루게 될 것이며, 초기 단계에서는 ATM과 IP 코어 네트워크와의 연동 기능을 제시하게 될 것이다. 따라서 HIPERLAN/2기반의 시스템 규격을 제시하기 위해서는 네트워크 계층 및 기타 상위 계층에 대한 규격이 요규되며, 이는 ATM Forum에서의 무선 ATM 신호 방식 규격, IETF(Internet Engineering Task Force)의 IP규격, 그리고 ETSI의 SMG (Special Mobile Group) 프로젝트에서 표준화되고 있는 UMTS (Universal Mobile Telecommunication Service) 규격 등과 접목될 것이다. 결과적으로 무선 ATM 관점에서는 완전한 시스템 규격 작성은 ETSI BRAN과 ATM Forum에서 무선 접속 규격과 이동성 관리 및 신호 방식으로 각각 이원화되어 진행되고 있다. 현재 물리 계층에서의 전송 방식은 OFDM(Orthogonal Frequency Division Multiplexing)으로 확정되었으며, DLC 계층에서는 고정 길이의 TDD (Time Division Duplexing) TDMA 프레임 구조를 기반으로 AP (Access Point)에 의해 동적으로 상향 링크 자원을 예약 할당하는 매체 접근 제어 (Medium Access Control: MAC) 프로토콜이 고려되고 있다. 이와 같은 DLC 계층에서는 기본적으로 짧은 길이의 패킷을 통해 다양한 대역폭의 멀티미디어 트래픽을 효율적으로 수용하면서 ATM 네트워크뿐만 아니라 향후 IP 네트워크에서 요구하는 각 서비스별 QoS (Quality of Service)를 개별적으로 보장할 수 있는 기능을 구현하고자 한다. 향후 이 부문에 대한 표준화가 본격적으로 진행될 것으로 예상되며 HIPERLAN/2의 경우에는 1999년 중반까지 1차 기능 규격을 완료할 예정이며, BRAN 전반에 대한 완전한 규격을 2002년까지 완성하는 것을 목표로 하고 있다.

• 에너지공학
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• 제14권1호
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• pp.46-53
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• 2005

본 논문은 확률적 기법을 적용하여 직접부하제어의 적정한 지원금을 산정하는 새로운 방법론을 제안한다. 직접부하제어의 경제성 분석은 발전기의 고장정지 특성, 직접부하제어 자원의 차단용량 및 차단시간 등을 모두 고려해야 하기 때문에 현실적으로 불가능한 것으로 인식되었다. 따라서 기존의 연구에서는 시나리오 접근법을 사용하여 직접부하제어의 경제성 평가를 수행하였다. 본 논문에서는 몬테카를로 시뮬레이션을 적용하여 직접부하제어의 제어전력량을 확률적으로 추정하고 이를 기반으로 직접부하제어의 지원금을 산정하는 새로운 접근법을 개발하였다. 또한 시뮬레이션의 효율을 향상시키기 위하여 분산감소 기법을 적용하였다. 본 논문에서 제안한 방법론의 유용성을 보이기 위해 IEEE 24-모선 신뢰도 계통에 적용하여 사례연구를 수행하였다.

• Tribology and Lubricants
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• 제32권4호
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• pp.125-131
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• 2016

In recent years, thick ta-C coating has attracted considerable interest owing to its existing and potential commercial importance in applications such as automobile accessories, drills, and gears. The thickness of the ta-C coating is an important parameter in these applications. However, the biggest problems are achieving efficient coating and uniformity over a large area with high-speed deposition. Feasibility is confirmed for the ta-C coating thickness of up to 9.0 µm (coating speed: 3.0 µm/h, fixed substrate) using a single FCVA cathode. The thickness was determined using multiple coating cycles that were controlled using substrate temperature and residual stresses. In the present research, we have designed a coating system using FCVA plasma and produced enhanced thick ta-C coating. The system uses a specialized magnetic field configuration with stabilized DC arc plasma discharge during deposition. To achieve quality that is acceptable for use in automobile accessories, the magnetic field, T-type filters, and 10 pieces of a multi-cathode are used to demonstrate the deposition of the thick ta-C coating. The results of coating performance indicate that uniformity is ±7.6 , deposited area is 400 mm, and the thickness of the ta-C coating is up to 5.0 µm (coating speed: 0.3 µm/h, revolution and rotation). The hardness of the coating ranges from 30 to 59 GPa, and the adhesion strength level (HF1) ranges from 20 to 60 N, depending on the ta-C coating.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.183-183
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• 2012

In the era of 45 nm or beyond technology, conventional etch mask using photoresist showed its limitation of etch mask pattern collapse as well as pattern erosion, thus hard mask in etching became necessary for precise control of etch pattern geometry. Currently available hard mask materials are amorphous carbon and polymetric materials spin-on containing carbon or silicon. Amorphous carbon layer (ACL) deposited by PECVD for etch hard mask has appeared in manufacturing, but spin-on carbon (SOC) was also suggested to alleviate concerns of particle, throughput, and cost of ownership (COO) [1]. SOC provides some benefits of reduced process steps, but it also faced with wiggling on a sidewall profile. Diamond like carbon (DLC) was also evaluated for substituting ACL, but etching selectivity of ACL was better than DLC although DLC has superior optical property [2]. Developing a novel material for pattern hard mask is very important in material research, but it is also worthwhile eliminating a potential issue to continuously develop currently existing technology. In this paper, we investigated in-situ dry-cleaning (ISD) monitoring of ACL coated process chamber. End time detection of chamber cleaning not only provides a confidence that the process chamber is being cleaned, but also contributes to minimize wait time waste (WOW). Employing Challenger 300ST, a 300mm ACL PECVD manufactured by TES, a series of experimental chamber cleaning runs was performed after several deposition processes in the deposited film thickness of $2000{\AA}$ and $5000{\AA}$. Ar Actinometry and principle component analysis (PCA) were applied to derive integrated and intuitive trace signal, and the result showed that previously operated cleaning run time can be reduced by more than 20% by employing real-time monitoring in ISD process.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2000년도 추계학술발표회 초록집
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

• 대한치과보철학회지
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• 제46권2호
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• pp.209-216
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• 2008

본 연구의 목적은 내측연결형 임플랜트와 일체형 지대주를 사용하여 최종 보철물을 시적한 뒤에 5만 번의 반복하중 후에 다시 체결하고 20만 번의 반복하중을 가한 후의 지대주 풀림토크와 20만 번의 반복하중을 받은 지대주 풀림토크가 어떻게 달라지는지를 비교하고자 하는 것이다. 실험 재료로는 타이타늄 지대주와 DLC 코팅된 지대주를 사용하였다. 실험군은 4군으로 모두 8개의 ITI SLA $4.1{\times}10mm$ 를 사용하였다. A군과 B군은 5만번, 20만번 반복하중을 가하고 Periotest값과 풀림 토크값을 측정하였으며 C군과 D군은 20만번 반복하중을 가하고 Periotest 값과 풀림토크값을 측정하였다. 풀림 토크값의 측정은 디지털 토크 게이지를 사용하였고, 반복하중은 MTS. (Bionix 850 II, MTS, U.S.A.)를 사용하였으며 100N/cm의 힘을 20도의 경사, 14Hz 의 조건으로 가하였다. A군과 C군은 코팅하지 않은 타이타늄 지대주를 사용하였으며, B군과 D군은 DLC 코팅한 지대주를 사용하였다. 1. 5만번 반복하중을 가한 뒤 측정한 풀림 토크는 B군에서 약간 더 큰 평균값을 보였다. 하지만 통계학적으로 두 군간에 유의한 차이를 보이지 않았다 (P>0.05). 2. 20만번 반복하중을 가한 뒤 측정한 최종 풀림 토크 값은 A군은 C군보다, B군은 D군보다 약간 더 큰 평균값을 보였으나 통계학적으로 두 군간에 유의한 차이를 보이지 않았다 (P>0.05). 3. 20만번 반복하중을 가한 최종 풀림 토크 값은 A, B군과 C, D군 사이에 통계학적으로 유의할 만한 차이가 없었다 (P>0.05).

• 통합자연과학논문집
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• 제13권3호
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• pp.87-91
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• 2020

Molybdenum carbide (MoC_x) thin films (TFs) were deposited by reactive radio frequency (rf) magnetron co-sputtering in high vacuum chamber. We compared the properties of MoC_x thin films as the rf power changed on C target. The result of alpha step measurement showed that the thickness of the MoC_x TFs varied from163.3 to 194.86 nm as C power was increased from 160 to 200 W. The crystallinity of MoC_x such as b-Mo₂C, Mo₂C, and diamond like carbon (DLC) structures were observed by XRD. The oxidation states of Mo and C were determined using high resolution XPS spectra of Mo 3d and C 1s were deconvoluted. Molybdenum was consisted of Mo, Mo⁴⁺, and Mo⁶⁺ species. And C was deconvoluted to C-Mo, C, C-O, and C=O species.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.438-444
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• 2003

A new method to measure residual stress in micron and nano scale films is described. In the theory it is based on Linear Elastic Fracture Mechanics. And in the techniques it depends on the combined capability of the focused ion beam (FIB) imaging system and of high-resolution digital image correlation (DIC) software. The method can be used for any film material (whether amorphous or crystalline) without thinning the substrate. In the method, a region of the film surface is highlighted and scanning electron images of that region taken before and after a long slot, depth a, is introduced using the FIB. The DIC software evaluates the displacement of the surface normal to the slot due to the stress relaxation by using features on the film surface. To minimize the influence of signal noise and rigid body movement, not a few, but all of the measure displacements are used for determining the real residual stress. The accuracy of the method has been assessed by performing measurements on a nano film of diamond like carbon (DLC) on glass substrate and on micro film of aluminum oxide thermally grown on Fecrally substrate. It is shown that the new method determines the residual stress ${\sigma}_R=-1.73$ GPa for DLC and ${\sigma}_R=-5.45$ GPa for the aluminum oxide, which agree quite well with ones measured independently.

• 정보저장시스템학회:학술대회논문집
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• 정보저장시스템학회 2005년도 추계학술대회 논문집
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• pp.185-189
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• 2005

We reported here nano-scale electrical phase-change recording in amorphous $Ge_2Sb_2Te_5$ media using an atomic force microscope (AFM) having conducting probes. In recording process, a pulse voltage is applied to the conductive probe that touches the media surface to change locally the electrical resistivity of a film. However, in contact operation, tip/media wear and contamination could major obstacles, which degraded SNR, reproducibility, and lifetime. In order to overcome tip/media wear and contamination in contact mode operation, we adopted the W incorporated diamond-like carbon (W-DLC) films as a protective layer. Optimized mutilayer media were prepared by a hybrid deposition system of PECVD and RF magnetron sputtering. When suitable electrical pulses were applied to media through the conducting probe, it was observed that data bits as small as 25 nm in diameter have been written and read with good reproducibility, which corresponds to a data density of $1 Tbit/inch^2$. We concluded that stable electrical phase-change recording was possible mainly due to W-DLC layer, which played a role not only capping layer but also resistive layer.

• 한국통신학회논문지
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• 제26권8A호
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• pp.1322-1328
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• 2001

본 논문에서는 무선 ATM 환경에서 터보코딩을 이용한 UEP(Unequal Error Protection)을 제안한다. 일반적으로 ATM셀의 header 부분은 payload 부분보다 중요시되며 header 부분에 payload 보다 부호율이 낮은 터보코드를 무선 ATM 적용하여 비트오류확률과 셀손실 확률을 구하였다. 무선 ATM 환경에서 터보코드를 사용하고 프레임길이 28바이트의 DLC 셀구조에서 UEP가 가능함을 보였다. 부호율 1/3인 터보 코딩을 이용한 경우 동일한 부호율의 컨벌루션 코드를 이용한 EEP(Equal Error Protection)과 비교하여 비트 오류확률과 셀 손실율에 있어서 최소 1dB와 2dB 신호대잡음비의 개선을 보였다.