Decrease of Gate Leakage Current by Employing Al Sacrificial Layer Deposited on a Tilted and Rotated Substrate in the DLC-coated Si-tip FEA Fabrication (DLC-coated Si-tip FEA 제조에 있어서 기판 상에 경사-회전 증착된 Al 희생층을 이용한 Gate누설 전류의 감소)
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- Journal of the Microelectronics and Packaging Society
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- v.7 no.3
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- pp.27-29
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- 2000