• Title/Summary/Keyword: DLBL

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Case of a Diffuse Large B-Cell Lymphoma Patient Treated with Traditional Korean Medicine Treatment (미만성 거대 B세포 림프종 환자의 한의약치료 증례보고)

  • Kim, In Soo;Cheong, Min Sung;Oh, Hyun Seung;Lee, Young Su
    • Journal of Physiology & Pathology in Korean Medicine
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    • v.28 no.2
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    • pp.233-237
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    • 2014
  • This case report that the therapeutic effects of traditional Korean medicine(TKM) treatment on the tumor response in a diffuse large B-cell lymphoma(DLBL) patient. A patient was treated by acupuncture, pharmacopuncture, moxibustion, cupping and herbal medicine once a week at least for 12 months. we evaluated the grade of chief complaints and performed blood tests and sonography, abdominal CT periodically. After 1 month administration with TKM treatment, the symptoms of the patient vanished obviously. the size of inguinal lymphoma decreased gradually through 3 months. then from 3 to 10 months, the size of inguinal lymphoma remained as it is. TKM treatment was maintained continuously. in the abdomino-pelvic CT performed after 12 months, the patient didn't complain any symptom and the size of inguinal lymphoma decreased a little again. This case study supports that TKM treatments may have a efficacy in treating diffuse large B-cell lymphoma(DLBL) patients.

Study on Electrical Characteristics of Ideal Double-Gate Bulk FinFETs (이상적인 이중-게이트 벌크 FinFET의 전기적 특성고찰)

  • Choi, Byung-Kil;Han, Kyoung-Rok;Park, Ki-Heung;Kim, Young-Min;Lee, Jong-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.11 s.353
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    • pp.1-7
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    • 2006
  • 3-dimensional(3-D) simulations of ideal double-gate bulk FinFET were performed extensively and the electrical characteristics. were analyzed. In 3-D device simulation, we changed gate length($L_g$), height($H_g$), and channel doping concentration($N_b$) to see the behaviors of the threshold voltage($V_{th}$), DIBL(drain induced barrier lowering), and SS(subthreshold swing) with source/drain junction depth($X_{jSDE}$). When the $H_g$ is changed from 30 nm to 45nm, the variation gives a little change in $V_{th}$(less than 20 mV). The DIBL and SS were degraded rapidly as the $X_{jSDE}$ is deeper than $H_g$ at low fin body doping($1{\times}10^{16}cm^{-3}{\sim}1{\times}10^{17}cm^{-3}$). By adopting local doping at ${\sim}10nm$ under the $H_g$, the degradation could be suppressed significantly. The local doping also alleviated $V_{th}$ lowering by the shallower $X_{jSDE}\;than\;H_g$ at low fin body doping.