• Title/Summary/Keyword: DI.010

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Performance Analysis of NOMA-based Relaying Networks with Transceiver Hardware Impairments

  • Deng, Chao;Zhao, Xiaoya;Zhang, Di;Li, Xingwang;Li, Jingjing;Cavalcante, Charles Casimiro
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.12 no.9
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    • pp.4295-4316
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    • 2018
  • In this paper, the performance of non-orthogonal multiple access (NOMA) dual-hop (DH) amplify-and-forward (AF) relaying networks is investigated, where Nakagami-m fading channel is considered. In order to cover more details, in our analysis, the transceiver hardware impairments at source, relay and destination nodes are comprehensively considered. To characterize the effects of hardware impairments brought in NOMA DH AF relaying networks, the analytical closed-form expressions for the exact outage probability and approximate ergodic sum rate are derived. In addition, the asymptotic analysis of the outage probability and ergodic sum rate at high signal-to-noise ratio (SNR) regime are carried out in order to further reveal the insights of the parameters for hardware impairments on the network performance. Simulation results indicate the performance of asymptotic ergodic sum rate are limited by levels of distortion noise.

Fabrication of 5,000V, 4-Inch Light Triggered Thyristor using Boron Diffusion Process and its Characterization (Boron 확산공정을 이용한 5,000V, 4인치 광 사이리스터의 제작 및 특성 평가)

  • Park, Kun-Sik;Cho, Doohyung;Won, Jongil;Lee, Byungha;Bae, Youngseok;Koo, Insu
    • The Transactions of the Korean Institute of Power Electronics
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    • v.24 no.6
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    • pp.411-418
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    • 2019
  • Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (VDRM) of 6,500 V. They drove an average on-state current (ITAVM) of 2,270 A, peak nonrepetitive surge current (ITSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I2T) of 17 MA2s without damage to the device.

Multivariate Analysis of the Prognosis of 37 Chondrosarcoma Patients

  • Yang, Zheng-Ming;Tao, Hui-Min;Ye, Zhao-Ming;Li, Wei-Xu;Lin, Nong;Yang, Di-Sheng
    • Asian Pacific Journal of Cancer Prevention
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    • v.13 no.4
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    • pp.1171-1176
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    • 2012
  • Objective: The current study aimedto screen for possible factors which affect prognosis of chondrosarcoma. Methods: Thirty seven cases were selected and analyzed statistically. The patients received surgical treatment at our hospital between December 2005 and March 2008. All of them had complete follow-up data. The survival rates were calculated by univariate analysis using the Kaplan-Meier method and tested by Log-rank. ${\chi}^2$ or Fisher exact tests were carried out for the numeration data. The significant indexes after univariate analysis were then analyzed by multivariate analysis using COX regression model. Based on the literature, factors of gender, age, disease course, tumor location, Enneking grades, surgical approaches, distant metastasis and local recurrence were examined. Results: Univariate analysis showed that there were significant differences in Enneking grades, surgical approaches and distant metastasis related to the patients' 3-year survival rate after surgery (P<0.001). No significant difference was not found in gender, age, disease course, tumor location or local recurrence (P>0.05). Multivariate analysis showed that Enneking grade (P=0.007) and surgical approaches (P=0.010) were independent factors affecting the prognosis of chondrosarcoma, but distant metastasis was not (P=0.942). Conclusion: Enneking grades, surgical approaches and distant metastasis are risk factors for prognosis of chondrosarcoma, among which the former two are independent factors.

Enhanced drought and salinity tolerance in transgenic potato plants with a BADH gene from spinach

  • Zhang, Ning;Si, Huai-Jun;Wen, Gang;Du, Hong-Hui;Liu, Bai-Lin;Wang, Di
    • Plant Biotechnology Reports
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    • v.5 no.1
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    • pp.71-77
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    • 2011
  • Drought and salinity are the most important abiotic stresses that affect the normal growth and development of plants. Glycine betaine is one of the most important osmolytes present in higher plants that enable them to cope with environmental stresses through osmotic adjustment. In this study, a betaine aldehyde dehydrogenase (BADH) gene from spinach under the control of the stress-induced promoter rd29A from Arabidopsis thaliana was introduced into potato cultivar Gannongshu 2 by the Agrobacterium tumefaciens system. Putative transgenic plants were confirmed by Southern blot analysis. Northern hybridization analysis demonstrated that expression of BADH gene was induced by drought and NaCl stress in the transgenic potato plants. The BADH activity in the transgenic potato plants was between 10.8 and 11.7 U. There was a negative relationship (y = -2.2083x + 43.329, r = 0.9495) between BADH activity and the relative electrical conductivity of the transgenic potato plant leaves. Plant height increased by 0.4-0.9 cm and fresh weight per plant increased by 17-29% for the transgenic potato plants under NaCl and polyethylene glycol stresses compared with the control potato plants. These results indicated that the ability of transgenic plants to tolerate drought and salt was increased when their BADH activity was increased.