• Proceedings of the KAIS Fall Conference
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• 2004.11a
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• pp.118-120
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• 2004

We propose the algorithm for parameters extraction through measured subthreshold amplified spontaneous emission (ASE) spectra for various DFB-type LDs. we compare spectra for extraction parameters through its algorithm with for original parameters.

• Photonics industry news
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• s.1
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• pp.61-61
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• 2000

• Proceedings of the Optical Society of Korea Conference
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• 2004.07a
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• pp.272-273
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• 2004

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.367-368
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• 2008

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.60-73
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• 1997

By introducing a compressive-strained quanternary InGaAsP quantum-wells instead of a conventional ternary InGaAs quantum-wells in 1.55.mu.m DFB-LD, the lasing performances canb e improved and the problems caused by the thickness non-uniformity and the compositional abruptness among the hetero-interpaces canb e relaxed. In this paper, we investigated an iptimum InGaAsP/InGaAsP multiple-quantum-well(MQW) structure as an active layer in a direct-modulated 1.55.mu. DFB-LD from the view point of threshold current, chirping charcteristics, and resonance frequency. The optimum compressive-strained MQW structure was revealed as InGaAsP/InGaAsP structure with strain amount of about 1.2%, number of wells $N_{w}$ of 7, well width $L_{w}$ of 58.agns.. The threshold current density J of 500A/c $m^{2}$, the linewidth enhancement factor a of 1.8, and differential resonance frequency of d $f_{r}$/d(I-I)$^{1}$2/=2GHz/(mA)$^{1}$2/(atI=2 $I_{th}$) were expected in 1.55.mu.m .gamma./4-shifted DFB-LD with the cavity length of 400.mu.m long and kL value of 1.25. These values are considerably improved ones compared to those of 1.55um DFB-LD with InGaAs/InGaAsP MQW which have enhancement factor and the resonance frequence frequency by the detuning of lasing wavelength and gain-peak wavelength. It was found that the linewidth enhancement factor of 20% and differential resonance frequency of 35% without the degradation of the threshold current density could be enhanced in the range of -15nm~-20nm detuning which can be realized by controlling the thickness and Incomposition of InGaAsP well. well.and Incomposition of InGaAsP well. well.

• The Journal of the Convergence on Culture Technology
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• v.6 no.4
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• pp.727-732
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• 2020

In this paper, when a refractive index grating and a gain grating were simultaneously present in a DFB laser having a wavelength of 1.55 ㎛, a dielectric film coating was applied so that reflection did not occur on the right mirror surface, so that 𝜌_r=0. In case of δL > 0, the threshold gain and the beam distribution in the longitudinal direction and the radiated power ratio P_l/P_r of the oscillation mode were compared for the cases of the phase of 𝜌_l=π and π/2. If the phase of 𝜌_l=π, in order to obtain a low threshold current and high frequency stability, κL should be greater than 8. In the case of the phase of 𝜌_l= π/2, when κL is larger than 4.0, the oscillation gain starts to be lower than when the phase of 𝜌_l=π. In order to lower the threshold current of a oscillation mode and enhance the frequency stability, κL should be greater than 8.

• The Journal of the Convergence on Culture Technology
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• v.8 no.5
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• pp.483-488
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• 2022

In this paper, when a gain grating and a refractive index grating exist simultaneously in a DFB laser diode having a wavelength of 1.55 ㎛, an anti-reflection coating is applied to the right mirror surface so that ρ_r=0. In case of δL<0, the characteristics of the oscillation frequency and oscillation gain have been analyzed. Whenever the phase of the grating on the left side of the mirror continuously decreases by π/2, the δL value of each oscillation mode decreases by about 0.6 to the left of the graph lines of each oscillation mode. The case of the oscillation mode having the lowest threshold gain is the case of κL=10, and in this case, the mode selectivity is relatively low compared to the case of other values of κL. From κL=0.1 to κL=6, the mode selectivity and the frequency stability are excellent. As the mode selectivity is excellent, the frequency stability is excellent. Compared to the case with two cleaved mirrors, the DFB laser diode with anti-reflection coating increases the threshold gain of the oscillation mode by about 2 times, but the mode selectivity becomes about 2 times better.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.313-316
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• 2000

Concentric-Circle-Grating (CCG) cavity is analyzed by coupled mode theory. In this case concentric grating is acting as both feedback element and output coupler. In our calculations radiation loss terms are included in guided coupled mode equations. The surface-emitted field distribution is obtained in self-consistent manner.

• Proceedings of the Optical Society of Korea Conference
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• 1999.08a
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• pp.222-223
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• 1999

The structural dependence of harmonic and intermodulation distortion characteristics in 1.55${\mu}{\textrm}{m}$ DFB-LCD were investigated. The linearity of 1.55${\mu}{\textrm}{m}$ DFB-LD was greatly improved by employing a partially corrugated structure.

• Korean Journal of Optics and Photonics
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• v.19 no.3
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• pp.208-218
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• 2008

We investigate the effect in terms of yield of the reflectivity of both facets and of the phase of a phase tuning section on the self-pulsation (SP) characteristics of multisection complex-coupled (CC) DFB lasers with self-pulsation frequency of the THz region. When the grating phases on both facets of a multisection CC DFB laser are fixed as 0, the variation of SP frequency increases as the reflectivity of both facets increases, while that of SP frequency decreases as the coupling ratio (CR) and the coupling strength increase. For the coupling strength of 3, the range of the phase of a phase tuning section with yields greater than 80% decreases as the CR and the reflectivity of both facets increases. For the coupling strength of 4, the range of the phase of a phase tuning section with yields greater than 80% increases as the CR and the reflectivity of both facets increases.