• International Journal of Oral Biology
• /
• v.46 no.4
• /
• pp.184-189
• /
• 2021

When luting indirect restorations with dual-cure resin cement (DCRC), excess cement can be easily removed by performing tack cure of DCRC for a few seconds. The purpose of this study was to evaluate whether different tack cure times affect polymerization shrinkage (PS) of the selected DCRC. One dual-cure resin cement (G-CEM LinkAce, GC) was used for measuring PS in light-cure (LC group), self-cure (SC group), and two tack-cure modes. In the first tack-cure subgroup, tack cure was performed for 1, 2, 3, and 5 seconds, followed by light cure after 2 minutes of remnant removal time in each case (TC-LC groups). In the other tack-cure subgroup, tack cure was performed for the same lengths of time, but followed by self-cure in each case (TC-SC groups). PS was measured by a modified bonded disc method for 1,800 seconds. One-way analysis of variance followed by Duncan's post hoc test was used to determine any statistically significant differences among the test groups (α = 0.05). When the DCRC was self-cured after tack cure, PS was significantly lower than when it was only self-cured (p < 0.05); however, tack cure time did not affect PS (p > 0.05). When the DCRC was light-cured, PS was not affected by tack cure or tack cure time (p > 0.05). Therefore, tack cure within 5 seconds did not negatively affect the final PS when the DCRC was light-cured after cement remnant removal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.05c
• /
• pp.208-211
• /
• 2001

Hot wall epitaxy 법으로 GaAs(100) 기판 위에 $Zn_{1-x}Mn_xTe(0{\leq}x{\leq}1)$ 단결정 박막을 성장하였다. XRD 스펙트럼으로부터 $Zn_{1-x}Mn_xTe$ epilayer들이 전 영역에 걸쳐 zincblende 구조임을 알았다. double crystal rocking curve(DCRC)로부터 격자상수를 계산하고 이훌 이용하여 조성비를 계산하였다. ZnMnTe 단결정 박막의 DCRC 반치폭은 Mn 조성비가 증가함에 따라 급격하게 증가하다가 포화되는 모습을 나타내었다

• Journal of the Korean Vacuum Society
• /
• v.8 no.4A
• /
• pp.470-475
• /
• 1999

ZnS and ZnTe epilayers were grown on GaAs(100) GaP(100) substrates by hot-wall eitaxy. X-ray diffraction revealed that the epilayers have zinc-blende structure and were grown in (100) direction. The small values of the full width at half maximum (FWHM) of double crystal rocking curve (DCRC) showed high quality of the epilayers. From the thickness dependence of the FWHM of DCRC, the strain remaining in films is found to be due to the thermal expansion difference as well as due to the lattice mismatch.

• Journal of the Korean Vacuum Society
• /
• v.7 no.4
• /
• pp.348-354
• /
• 1998

To investigate an influence of the thermal preheating for the substrates exerted on the heteroepilayers, the ZnTe epilayers are grown on the GaAs (100) at the substrate temperature of 450~$630^{\circ}C$ by hot wall epitaxy (HWE). For this purpose, double crystal rocking curve (DCRC) and photoluminescence (PL) are measured. The full width at half maximum of DCRC are the smallest in the ZnTe epilayers grown on the GaAs thermally etched at around both $510^{\circ}C$ and $590^{\circ}C$. However, at around $550^{\circ}C$ they increase due to the reconstruction of the atoms in the surface. And they increase due to the oxide layer at below $490^{\circ}C$ and due to the surface defects at above $610^{\circ}C$. From PL analysis, the full width at half maximum of the light hole exciton $X_{1s,th}$ and of the second-order Raman line increase at around $550^{\circ}C$. With the increasing preheating temperature, the intensities of Y-bands and of the oxygen bound exciton (OBE) peak related to an oxide layer on the GaAs surface generally decrease. From these experimental results, it's confirmed that the GaAs substrate thermally etched influences the ZnTe pilayers.

• Proceedings of the Korea Contents Association Conference
• /
• 2006.11a
• /
• pp.75-79
• /
• 2006

In a VoIP(Voice over IP) system which support the realtime speech service, speech quality is deteriorated by the delay, the jitter, the loss, and the reversed packet order. In this thesis, APBC for receiver site is proposed, which compensate the jitter by the adaptive playout algorithm and conceal the packet loss, and align the packet order. Also, a VoIP application system is implemented, and the performance of APBC is verified on the implemented system by measuring the processing speed and the speech quality. From the result, processing speed is 257$\mu$sec, which is fast enough to deal with packet being received in realtime. Also, the speech quality by MOS(Mean Opinion Score) is improved as 18 percent compared with algorithm of fixed playout delay.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.481-484
• /
• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. These crystals were obtained by lowering the quartz ampoule for growth in the furnace and growth rate at optimum condition is 0.4mm/hr. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes together with their overtones and combinations were observed. Optical properties were investigated by photoluminescence at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undoped-lnSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution.

• Journal of Korea Multimedia Society
• /
• v.21 no.12
• /
• pp.1481-1492
• /
• 2018

Musculoskeletal disorders show symptoms of pain and dysfunction caused by accumulation of minute damage on nerves and blood vessels which are related to specific body parts. This is more likely to occur in the elderly. In Korea, 40.3% of the agricultural population is over 65 years old. In these cases, the portion of musculoskeletal disorders is more than 80% in acute/chronic diseases related to agricultural work. Therefore, measures for physical health care and safety prevention of elderly farmers are needed. In this study, we intend to propose a method to measure musculoskeletal health condition through the motion recognition device and VR contents. For this, we analyze the agricultural work causing musculoskeletal disorders of farmers, and suggest a motion analysis algorithm that can measure the health condition of the musculoskeletal system. In addition, we are going to propose a training method customized for farmers on the basis of VR contents in order to prevent musculoskeletal disorders.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.1
• /
• pp.107-112
• /
• 1999

The ZnSe/GaAs epilayers were grown by RF reactive sputtering. In order to obtain the optimum condition of the growth, we have studied the dependence of Ar pressure, input power of sputter, temperature of substrate, and the distande between substrate and target. Through the observation of the grown epilayer via electronic microscope, we confirmed that the layer's surface was uniform and the boundary of the substrate and the layer was well defined. The defotmation of lattice distortion and the distortion ratio were obtained by DCRC measurements. From mrasurements of photoluminescence, in the ZnSe/GaAs sample without injection of $N_2$gas, we found that the intensity of bound exciton $I_2$is stronger than that of $I_1$and the bound exiton $I_1$represents the deep acceptor level, $I_1\;^d$. On the other hand, in the ZnSe/GaAs sample with injection of$N_2$gas, the peak of$I_1$ was much higher than that of the $I_2$and the half width appeared to be narrow. We concluded that the p-type of ZnSe/GaAs epilayer was grown successfully, because of stronger peak of the bound exciton $I_1$due to the $N_2$dopping.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.2
• /
• pp.211-220
• /
• 1998

The stochiometric composition of $AgGaS_2$polycrystal source materials for the single crystal thin films were prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns, it was found that the polycrystal $AgGaS_2$has tetragonal structure of which lattice constant $a_0\;and \;c_0$ were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$single crystal thin film was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5 $mu \textrm{m}$/h. The crystallinity of the grown single crystal thin films was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by${\Alpha};=;8.695{\times}10^{-4};eV/K,and;{\beta};=;332;K$. from the photocurrent spectra by illumination of polarized light of the $AgGaS_2$single crystal thin film, we have found that crystal field splitting $\Delta$Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Journal of the Korean Vacuum Society
• /
• v.6 no.S1
• /
• pp.34-42
• /
• 1997

Hg-Te-CdTe superlattices have received much interests over the last several years as a potential material for its applications for detecting devices and optoelectronics. We have grown the HgTe-CdTe superlattice using MBE. in our lab. We have carried out DCRC spectroscopy after growth of HgTe-CdTe superlattice with varying the superlattice periods and controlling the barrier thickness and we have that the presence of the main peak and the satellite peaks. We obtained 20 arcsec of FWHM over 100 periods of superlattice. We also note that high peak intensity shows the high quality of the sample and each layer of superlattice has abrupt interfaces. The angular separation between the main peak(m=0) and the first satellite peak(m=$\pm$1) is increased when the barrier layer thickness in superlatice layers are decreased. The separation between the first setellite peak(m=$\pm$1) and the second satellite peak(m$\pm$2) is increased similarly. The number of the satellite peak is a qualitative measure of the interfacial abruptness of the superlattice.