• Journal of the Korean Magnetics Society
• /
• v.9 no.5
• /
• pp.256-262
• /
• 1999

Sputter deposited CoCr(Mo)/Si film were studied with emphasis on the correlation between magnetic properties and crystallographic orientation. The perpendicular coercivities of CoCr films decreased with Si underlayer thickness, whereas those of CoCrMo films increased with Si underlayer thickness. It has been explained that additions of the larger atomic radius Mo atoms in CoCr films impedes crystal growth resulting in a decrease in grain size, thus this small grain size may induce high perpendicular coercivity. The c-axis alignment of CoCrMo film was improved due to addition of 2at.%Mo. It means CoCrMo layer grow self-epitaxial directly from orientation and structure of Si underlayer when the main layer grow on underlayer.

• Journal of Surface Science and Engineering
• /
• v.29 no.5
• /
• pp.379-385
• /
• 1996

Adhesion of Cu/Cr and Cu/$Cu_xCr_{1-x}$ thin films onto polyimide substrates has been studied. For an adhesion layer, Cr or Cu-Cr alloy films were deposited onto polyimide using DC magnetron sputtering machine. Then Cu was sputter-deposited and finally, Cu was electroplated. Adhesion was evaluated using $90^{\circ}C$ peel test or T-peel test. Plastic deformation of the peeled metal layer was qualitatively measured using XRD technique. It is confirmed that high interfacial fracture energy and large plastic deformation are important to enhance the peel adhesion strength. High peel strength is obtained when the interface is strongly bonded. More ductile film has higher peel strength. In Cu-Cr alloy films, opposite effects of the Cr addition in the alloy film on the peel strength are operative: a beneficial effect of strong interfacial bonding and a negative effect of smaller plastic deformation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.418-419
• /
• 2007

Effects of Fe catalyst film and carbon nanotube (CNT) growth temperature on the characteristics of carbon nanotube were investigated in thermal chemical vapor deposition (CVD) process. Fe catalyst was prepared by DC magnetron sputter with thickness of 5-40 nm and pre-treated with ammonia gas. CNTs were grown at $700-900^{\circ}C$. It was found that the island formation of catalyst is necessary for the CNT growth. The diameter of these CNTs shows a strong correlation with the catalyst film thickness and growth temperature.

• Journal of Surface Science and Engineering
• /
• v.27 no.5
• /
• pp.261-272
• /
• 1994

Both Cu-Cr and Cu-Ti alloy films with different composition were prepared by dc magnetron sputtering onto polyimide substrate and their adhesion and microstructure were observed. In addition, the effect of heat treatment at $400^{\circ}C$ for 2 hours on the variation of adhesion properties and on the changess of microstructure were investigated. Cu-Cr alloy films have crystalline structure of either for or bcc phase depending on the composition of the film. However, the Cu-Ti alloy film forms fcc phase at low Ti concentration while it forms an amorphous phase as the Ti concentration in the films is increased to more than 25at.%. TEM analysis reveal that the microstructure of Cu-Cr and Cu-Ti films forms an open structure with vacant spaces. The adhesion between Cu-Cr, Cu-Ti alloy films and polyimide substrate is relatively good before the heat treatment, but is noticeably reduced after the heat treatment. In particular, the adhesion strength is significantly reduced in the Cu-Ti alloy films after the heat treatment. The reduction of adhesion strength after the heat treatment is identified to relate with the formation of oxide phases at the metal/polyimide interface by AES(Auger Electron Spectroscopy).

• Journal of Surface Science and Engineering
• /
• v.27 no.5
• /
• pp.253-260
• /
• 1994

Ta-N films were reactively sputter deposited by dc magnetron sputtering from a Ta target with a various Ar-N, gas ratio. Electrical resistivity of pure Ta film was 150$\mu$$\Omega$cm and decreased initially with nitrogen addition, and then increased to a value of 220$\mu$$\Omega$-cm~260$\mu$$\Omega$-cm at 9%~23% nitrogen partial flow. Rutherford backscattering spectrometry(RBS) and Auger electron spectroscopy (AES) analysis show that nitrogen content in the film is increased with the nitrogen partial flow. The film contains 58at.% nitrogen at 36% nitrogen partial flow. Both the phase and the microstructure of the as-deposisted films were investigated by x-ray diffractometry(XRD) adn transmission electron microscopy (TEM) at various nitrogen content. The phase of pure Ta film is identified as $\beta$-Ta with a 200$\AA$~300$\AA$ grain size. The phase of Ta film is changed to bcc-Ta as small amount of nitrogen is added. Crystalline Ta2N film was deposited at 24at.% nitrogen content. Amorphous phase is formed over a range of nitrogen content from about 33at.% to 35at.% while crystalline fcc-TaN is observed to form at 39at.%~48at.% nitrogen content.

• Journal of Surface Science and Engineering
• /
• v.32 no.1
• /
• pp.3-9
• /
• 1999

Pt thin film of about 7000$\AA$ thickness was deposited on the alumina substrate using DC Magnetron Sputter and the characteristics of the film for temperature sensor were investigated. When film of about 7000$\AA$ thickness was deposited at working gas pressure of $2.0{\times}10^{-3}$torr, sputtering power of 50W, substrate temperature of $350^{\circ}C$(Ts), sheet resistance(Rs), resistivity($\rho$) and temperature coefficient of resistivity(TCR) of the film were respectively 0.39$\Omega$/$\square$, 27.60$\mu\Omega$-cm and $3350 ppm/^{\circ}C$. When the film was annealed at $1000^{\circ}C$ for 240min in hydrogen ambient, Rs, $\rho$ and TCR were respectively 0.236$\Omega$/$\square$, 15.18$\mu\Omega$-cm and 3716 ppm/$3716 ppm/^{\circ}C$. When working gas of 15sccm oxygen and 100sccm Argon were used, Rs, $\rho$ and TCR were respectively 0.335$\Omega$/$\square$, 22.45$\mu\Omega$-cm and $3427 ppm/^{\circ}C$. When the film was annealed at $1000^{\circ}C$ for 240min, Rs, $\rho$and TCR were respectively 0.224/$\Omega$$\square$, 14$\mu\Omega$-cm and $3760 ppm/^{\circ}C$ and the characteristics of the film were much improved.

• Journal of Surface Science and Engineering
• /
• v.48 no.5
• /
• pp.233-237
• /
• 2015

In order to investigate the potassium (K) gettering, Al-1%Si/$SiO_2$/PSG multilevel thin films were fabricated. Al-1%Si thin films and $SiO_2$/PSG passivations were deposited by using DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition), respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling analysis was used to determine the distribution of K, Al, Si, P, and other elements throughout the $SiO_2$/PSG passivated Al-1%Si thin film interconnections. Potassium peaks were observed throughout the $SiO_2$/PSG passivation layers, and especially the interface gettering at the $SiO_2$/PSG and at the Al-1%Si/$SiO_2$ interfaces was observed. Potassium gettering in Al-1%Si/$SiO_2$/PSG multilevel thin films is considered to be caused by a segregation type of gettering.

• Journal of the Korean Magnetics Society
• /
• v.5 no.5
• /
• pp.601-605
• /
• 1995

Magnetic properties of FeTaN and FeTaC films deposited by DC magnetron reactive sputter were investigated, and correlated with their microstructures. The optimum magnetic properties of Hc : 0.25 Oe, Bs : 14.5 kG, and ${\mu}'$ : 4000 (5MHz) are observed in the $Fe_{78.8}Ta_{8.5}N_{12.7}$ film, and Hc : 0.25 Oe, Bs : 14.5 kG, and ${\mu}'$ : 2700 (5MHz) in the $Fe_{75.6}Ta_{8.1}C_{16.3}$ film. In both FeTaN and FeTaC films with minimum grain size show the best soft magnetic properties. Thermal stability of the soft magnetic properties of FeTaN is found to be higher than FeTaC for similar compositons. TaN and TaC particles form to retard the growth of $\alpha$-Fe grains. TaN particles in FeTaN show higher efficiency in retarding the grain growth during heat treatments resulting the higher thermal stability, compared to TaC particles in FeTaC films.

• Journal of Surface Science and Engineering
• /
• v.55 no.2
• /
• pp.91-95
• /
• 2022

ZnO single layer (60 nm thick) and ZnO with Ag interlayer (ZnO/Ag/ZnO; ZAZ) films were deposited on the glass substrates by using radio frequency (RF) and direct current (DC) magnetron sputter to evaluate the effectiveness of Ag interlayer on the optical visible transmittance and the conductivity of the films. In the ZAZ films, the thickness of ZnO layers was kept at 30 nm, while the Ag thickness was varied as 5, 10, 15 and 20 nm. In X-ray diffraction (XRD) analysis, ZnO films show the (002) diffraction peak and ZAZ films also show the weak ZnO (002) peak and Ag (111) diffraction peak. As a thickness of Ag interlayer increased to 20 nm, the grain size of the Ag films enlarged to 11.42 nm and the optical band gap also increased from 4.15 to 4.22 eV with carrier concentration increasing from 4.9 to 10.5×10²¹ cm^-3. In figure of merit measurements, the ZAZ films with a 10 nm thick Ag interlayer showed the higher figure of merit of 4.0×10^-3 Ω^-1 than the ZnO single layer and another ZAZ films. From the experimental result, it is assumed that the Ag interlayer enhanced effectively the opto-electrical performance of the ZAZ films.

• Journal of the Korean Vacuum Society
• /
• v.22 no.3
• /
• pp.126-130
• /
• 2013

The sodium (Na) and moisture ($H_2O$) gettering phenomena were measured and analyzed in PSG/$SiO_2$ passivated Al-1%Si thin film interconnections. PSG/$SiO_2$ passivation and Al-1%Si thin films were deposited by using APCVD (atmosphere pressure chemical vapor deposition) and DC magnetron sputter techniques, respectively. SIMS (secondary ion mass spectrometry) depth profiling analysis was used to determine the distribution of sodium and moisture throughout the PSG/$SiO_2$ passivated Al-1%Si thin film interconnections. Both sodium and moisture peaks were observed strongly at the interfaces between layers rather than within the Al-1%Si thin film interconnections. Sodium peaks were observed at the interface between PSG and $SiO_2$ passivations, while moisture peaks were not observed.