• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.699-702
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• 2002

A DC current sensor is disclosed in which two pairs of saturable cores are provided so as enclose a conductor carrying a direct current to be measured. On each of the saturable cores, a bias winding, a feedback winding and an output winding are wound. Circuit for detection of an asymmetry in the magnetization current, generated by a reference alternating voltage, in a signal-conditioner. The reference alternating voltage is fed to the respective series circuits such that no resultant induction current is induced in the modulating current. The voltages over the resistor form input signals for two peak value detectors, the strength of the output signal of which represents the degree of asymmetry of magnetization current. This paper describes the development a DC current sensor and its signal-conditioner.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.101-104
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• 2003

The maximum coercive force of SmCo thin film was obtained at the Sm=28.2% and dc bias field was generated to CoZrNb, soft magnetic thin film, deposited on the SmCo thin film. DC field point having the maximum permeability for CoZrNb was shifted to higher dc field. DC field strength increased as the length of easy direction of magnetization decreased and 60Oe was measured for $3mm{\times}0.5mm$ sample.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.70-71
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• 1999

• Journal of Magnetics
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• v.14 no.2
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• pp.66-70
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• 2009

The dynamic magneto-mechanical behaviors in a type of iron-nickel-based ferromagnetic alloy with constant elasticity were investigated as a function of both the DC bias magnetic field ($H_{dc}$) and the frequency. The rectangular plate-like samples were excited to vibrate at a half-wavelength, longitudinal resonance by an AC magnetic field superimposed with various $H_{dc}$. The experimental results found that the strain coefficient at resonance reached 819.34 nm/A and the effective mechanical quality factor ($Q_m$) was greater than 2000. The ratio of the maximum variation of the Young's modulus over $H_{dc}$ to the value of the Young's modulus at a zero bias field was only ${\sim}0.83%o$ because of the so-called constant elasticity. The resonant strain coefficients and $Q_m$ are strongly dependent on $H_{dc}$, which indicates a promising potential for use in DC and quasistatic magnetic field sensing.

• Applied Chemistry for Engineering
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• v.17 no.3
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• pp.327-330
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• 2006

We investigated the usefulness of $NbO_{x}$ nanopillars as an etching mask of dry etching for the formation of Si nanodot arrays. The $NbO_{x}$ nanopillar arrays were prepared by the anodic aluminum oxidation process of Al and Nb thin films. The etch rate and etch profile of $NbO_{x}$ nanopillar arrays were examined by varying the experimental conditions such as the concentration of etch gas, coil rf power, and dc bias voltage in the reactive ion etch system using the inductively coupled plasma. As the concentration of $Cl_{2}$ gas increased, the etch rate of $NbO_{x}$nanopillars decreased. With increasing coil rf power and dc bias voltage, the etch rates were found to increase. The etch characteristics and etch mechanism of $NbO_{x}$ nanopillars were investigated by varying the etch time under the selected etch conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.492-492
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• 2012

RF biased inductively coupled plasma (ICP) has been widely used in various semiconductor etching processes and laboratory plasma researches. However, almost researches for the RF bias have been focused on the controls of dc self-bias voltages, even though the RF bias can change plasma parameters, such as electron temperature, plasma density, electron energy distribution (EED), and their spatial distributions. In this study, we report on the effect of the RF bias on the plasma parameters and the EEDs with various external parameters, such the RF bias power, the ICP power, the gas pressure, the gas mixture, and the frequency of RF bias. Our study shows the correlation between the RF bias and the plasma parameters and gives a crucial key for the understanding of collisionless electron heating mechanism in the RF biased ICP.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.879-880
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• 2008

At the high speed operation, the boost negative bias can reduce the negative torque and increase the dwell angle, so the output power and efficiency can be improved. In this paper, a novel power converter for single phase SRM with boost negative bias is proposed. A simple passive capacitor circuit is added in the front-end, which consists of three diodes and one capacitor. Based on this passive capacitor network, the two capacitors can be connected in series and parallel in different condition. In proposed converter, the phase winding of SRM obtains general dc-link voltage in excitation mode and the double dc-link voltage in demagnetization mode. The operation modes of the proposed converter are analyzed in detail. Some computer simulation and experimental results are done to verify the performance of proposed converter.

• Journal of Power Electronics
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• v.16 no.3
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• pp.960-969
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• 2016

High-power three-level voltage-source converters are widely utilized in high-performance AC drive systems. In several ultra-power instances, the harmonics on the grid side should be reduced through multiple rectifications. A combined harmonic elimination method that includes a dual primary-side series-connected winding transformer and selective harmonic elimination pulse-width modulation is proposed to eliminate low-order current harmonics on the primary and secondary sides of transformers. Through an analysis of the harmonic influence caused by dead time and DC magnetic bias, a synthetic compensation control strategy is presented to minimize the grid-side harmonics in the dual primary side series-connected winding transformer application. Both simulation and experimental results demonstrate that the proposed control strategy can significantly reduce the converter input current harmonics and eliminates the DC magnetic bias in the transformer.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1739-1741
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• 2000

DC current density-voltage and impedance spectroscopy studies have been performed on indium-tin-oxide(ITO)/para-sexiphenyl(6p)/aluminium organic electroluminescent device. The device exhibited a blue color emission, The turn-on voltage of the device is observed at 5V from the current density-voltage measurements. The impedance spectroscopy measurements show that a resonance frequency shift with applied DC bias is observed and a single semi-circle Cole-Cole plot is confirmed. The bias-dependent bulk resistance and bias-independent bulk capacitance is observed.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.10
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• pp.1888-1892
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• 2008

In this paper, a new parallel CMOS self-bias differential amplifier is designed to use in high-speed analog signal processing circuits. The designed parallel CMOS self-bias differential amplifier is developed by using internal biasing circuits and the complement gain stages which are parallel connected. And also, the parallel architecture of the designed parallel CMOS self-bias differential amplifier can improve the gain and gain-bandwidth product of the typical CMOS self-bias differential amplifier. With 1.8V $0.8{\mu}m$ CMOS process parameter, the results of HSPICE show that the designed parallel CMOS self-bias differential amplifier has a dc gain and a gain-bandwidth product of 64 dB and 49 MHz respectively.