• Journal of Internet Computing and Services
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• v.14 no.1
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• pp.9-14
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• 2013

The criterion of zero-error probability provides a limitation on error probability functions being used for adaptive systems when the error samples are shifted by the influence of DC-bias noise. In this paper, we employ a bias term in the error distribution and propose a new criterion of the biased zero-error probability with error being zero. Also, by maximizing the proposed criterion on expanded filter structures, a supervised adaptive algorithm has been derived. From the simulation results of supervised equalization, the algorithm based on the proposed criterion yielded zero-centered and highly concentrated error samples without disturbance in the environments of strong impulsive and DC-bias noise.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.10a
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• pp.35-38
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• 2018

This paper describes a low-power MPPT interface for DC-type energy harvesting sources. The proposed circuit consists of an MPPT controller, a bias generator, and a voltage detector. The MPPT controller consists of an MPG (MPPT Pulse Generator) with a schmitt trigger, a logic gate operating according to energy type (light, heat), and a sample/hold circuit. The bias generator is designed by employing a beta multiplier structure, and the voltage detector is implemented using a bulk-driven comparator and a two-stage buffer. The proposed circuit is designed with $0.35{\mu}m$ CMOS process. The simulation results show that the designed circuit consumes less than 100nA of current at an input voltage of less than 3V and the maximum power efficiency is 99.7%. The chip area of the designed circuit is $1151{\mu}m{\times}940{\mu}m$.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.2 s.332
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• pp.87-92
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• 2005

In this paper, adaptive bias circuit and PBG structure have been employed to suppress IMD and improve PAE (Power Added Efficiency) of the power amplifier. It is controlling the gate 'dc' bias voltage with the envelope of the input RF signal. and The PBG structure has been employed on the output port of power amplifier . The proposed power amplifier using adaptive bias circuit and PBG has been improved the IMG by 3 dBc, and the average PAE by $35.54\%$, respectively.

• 제어로봇시스템학회:학술대회논문집
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• 1992.10a
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• pp.670-674
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• 1992

This paper presents a velocity regulation scheme for a DC motor subjected to random torque and velocity measurement noises of white noise type as well as unknown constant load torque (bias). The scheme separately estimates an unknown bias in addition to state estimation by the bias-free Kalman Filter, and reflects the effect of the bias estimate to the armature input voltage such that velocity variations be regulated. It is shown via computer simulations that the performance of the present scheme is superior to that of the conventional analog PI regulator.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.472-474
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• 1995

A Sputter ion Plating(SIP) system with a r.f. coil electrode and the Facing Target Sputter(FTS) source was designed for high-quality thin film formation. The rf discharge was combined with DC facing target sputtering in order to enhance ionization degree of a sputtered atoms. The energy of ions incident on the substrate depended on the health potential of DC biased substrate. The mean impact ion energy increased with negative bias voltage and rf power. The adhesive force of the TiN film formed was in the range of 30$\sim$50N, and markedly influenced by substrate bias voltage.

• Applied Chemistry for Engineering
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• v.18 no.1
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• pp.24-28
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• 2007

The etching of zinc oxide (ZnO) thin films has been studied using a high density plasma in a $Cl_2/Ar$ gas. The etch characteristics of ZnO thin films were systematically investigated on varying $Cl_2$ concentration, coil rf power, dc-bias voltage, and gas pressure. With increasing $Cl_2$ concentration, the etch rate of ZnO thin film increased, the redeposition around the etched patterns decreased but the sidewall slope of the etched patterns slanted. As the coil rf power and dc-bias voltage increased, the etch rates of ZnO thin films increased and etch profiles of ZnO thin films were improved. With increasing gas pressure, the etch rate of ZnO thin films slightly increased but little change in etch profile was observed. Based on these results, the optimal etching conditions of ZnO thin film were selected. Finally, the etching of ZnO thin films with a high degree of anisotropy of approximately $75^{\circ}{\sim}80^{\circ}$ without the redepositions and residues was successfully achieved at the etching conditions of 20% $Cl_2$ concentration, coil rf power of 1000 W, dc-bias voltage of 400 V, and gas pressure of 5 mTorr.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.130-131
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• 2009

AIP(arc ion plating)방법과 마그네슘 스퍼터링(DC reactive magnetron sputtering) 방법을 결합시킨 하이브리드 코팅 시스템으로 Cr-Si-N 코팅막을 합성하였다. 고분해능 TEM 및 SEM 분석들로부터 negative bias voltage에 따른 미세구조의 영향을 나타내었다. negative bias voltage의 증가에 따라 columnar microstructure가 amorphous microstructure로 변화하였다. bias voltage effect에 의해 Cr-Si-N 코팅막내 입자의 크기가 미세해지고 나노 복합체를 잘 형성하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.5
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• pp.198-201
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• 2005

Carbon nanofibers were formed on silicon substrate which was applied by negative direct current (DC) bias voltage using microwave plasma-enhanced chemical vapor deposition method. Formation of carbon nanofibers were varied according to the variation of the applied bias voltage. At -250 V, we found that the growth direction of carbon nanofibers followed the applied direction of the bias voltage. Based on these results, we suggest one of the possible techniques to control the growth direction of the carbon nanofibers.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.346-352
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• 1999

Diamond-like carbon (DLC) lims were deposited by using end hall type ion gun. Benzene gas was used for the generation of carbon ions. In order to systematically control the ion energy, we applied to the substrate DC, pulsed DC or 250 kHz medium frequency bias voltage, DLC films of superior mechanical properties of hardness 39$\pm$4 GPa and elastic mudulus 290$\pm$50GPa (2 to 6 times better than those of the films deposited by plasma assisted CVD method) could be obtained. Deposition rate was much higher than when using Kaufman type ion source, which results from higher ion beam current of end hall type ion gun. The mechanical properties and atomic bond structure were independent of the bias voltage type ion gun. The mechanical properties and atomic bond structure were independent of the bias voltage type but intimately related with the magnitude of the bias voltage. With increasing the negative bias voltage, the structure of the films changed to graphitic one resulting in decreased content of three dimensional inter-links. Degradation of the mechanical properties with increasing bias voltage could be thus understood in terms of the content odf three dimensional inter-links.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.127-127
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• 2009

고밀도 유도 결합 플라즈마와 함께 -1 kV의 높은 펄스 직류 바이어스를 이용한 플라즈마 공정 장치를 CFD-ACE+를 이용하여 시변 모델로 해석하였다. 수 kHz의 낮은 펄스주파수와 $5{\mu}s$의 빠른 펄스 상승 시간의 효과에 의한 플라즈마 특성을 모사한 결과 전자 온도의 상승과 그에 의한 플라즈마 가열은 펄스 상승 시간 보다 수 ${\mu}s$늦게 발생하였으며 쉬스의 팽창은 Ar 10 mTorr에서 약 20 mm정도이며 계산된 전자 온도는 최고 20 eV에 이른다.