• ETRI Journal
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• v.24 no.3
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• pp.211-220
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• 2002

This study characterizes an oxide etching process in a magnetically enhanced reactive ion etching (MERIE) reactor with a $CHF_3/CF_4$ gas chemistry. We use a statistical $2^{4-1}$ experimental design plus one center point to characterize the relationships between the process factors and etch responses. The factors that we varied in the design include RF power, pressure, and gas composition, and the modeled etch responses were the etch rate, etch selectivity to TiN, and uniformity. The developed models produced 3D response plots. Etching of $SiO_2$ mainly depends on F density and ion bombardment. $SiO_2$ etch selectivity to TiN sensitively depends on the F density in the plasma and the effects of ion bombardment. The process conditions for a high etch selectivity are a 0.3 to 0.5 $CF_4$ flow ratio and a -600 V to -650 V DC bias voltage according to the process pressure in our experiment. Etching uniformity was improved with an increase in the $CF_4$ flow ratio in the gas mixture, an increase in the source power, and a higher pressure. Our characterization of via etching in a $CHF_3/CF_4$ MERIE using neural networks was successful, economical, and effective. The results provide highly valuable information about etching mechanisms and optimum etching conditions.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.1
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• pp.29-35
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• 2016

We have demonstrated a $Ti:LiNbO_3$ electro-optic electric-field sensors utilizing a $1{\times}2$ Y-fed balanced-bridge Mach-Zehnder interferometric (YBB-MZI) modulator which uses a 3-dB directional coupler at the output and dipole patch antenna. The operation and design were proved by the BPM simulation. A dc switching voltage of ~16.6 V and an extinction ratio of ~14.7 dB are observed at a wavelength of $1.3{\mu}m$. For a 20 dBm rf power, the minimum detectable electric-fields are ~1.12 V/m and ~3.3 V/m corresponding to a dynamic range of about ~22 dB and ~18 dB at frequencies 10 MHz and 50 MHz, respectively. The sensors exhibit almost linear response for the applied electric-field intensity from 0.29 V/m to 29.8 V/m.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.15-22
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• 2011

Integrated-optic symmetric/asymmetric Mach-Zehnder interferometers at $1.3{\mu}m$ wavelength were studied as sensing part for electric-field measurement system. The devices were simulated based on the BPM software and fabricated utilizing Ti-diffused $LiNbO_3$ channel optical waveguides and lumped-type electrodes. A half-wave voltage of $V_{\pi}$=6.6V and modulation depth of 100% and 75% for a symmetric structure were measured for 200Hz and 1kHz electrical signal bandwidth, respectively. By the way, almost half-maximum power transmission was observed for asymmetric interferometers with ${\pi}$/2 intrinsic phase difference. Expected experimental measurements were observed for 1kHz electrical signal bandwidth.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• Journal of IKEEE
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• v.18 no.2
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• pp.282-290
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• 2014

This paper presents the design of embedded electrical power control unit for Personal Electrical Vehicle(PEV). The embedded unit is designed using PIC18F8720 processor, 16Mb flash ROM, 32Mb SDRAM and signal condition circuits. The proposed PEV consists of 4KW in-wheel Brushless DC Motor(BLDCM), 3 phase voltage source inverter with the $180^{\circ}$ conduction space vector PWM method, PID speed controller and the embedded control unit. The PEV has mechanical manufacture of inverse 3 wheel system, which is applied by the in-wheel BLDCM and steering mechanism with tilting function. Also, the performances of the proposed embedded electrical power control unit are verified through the lab experiment and road driving test of PEV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.826-830
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• 2013

In this paper, we carried out the investigations of both etch characteristics and mechanisms for the $SnO_2$ thin films in $O_2/BCl_3/Ar$ plasma. The dry etching characteristics of the $SnO_2$ thin films was studied by varying the $O_2/BCl_3/Ar$ gas mixing ratio. We determined the optimized process conditions that were as follows: a RF power of 700 W, a DC-bias voltage of - 150 V, and a process pressure of 2 Pa. The maximum etch rate was 509.9 nm/min in $O_2/BCl_3/Ar$=(3:4:16 sccm) plasma. From XPS analysis, the etch mechanism of the $SnO_2$ thin films in the $O_2/BCl_3/Ar$ plasma can be identified as the ion-assisted chemical reaction while the role of ion bombardment includes the destruction of the metal-oxide bonds as well as the cleaning of the etched surface form the reaction products.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.1A
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• pp.80-86
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• 2010

This work has been measured and analyzed the device degradation of NBTI (Negative Bias Temperature Instability) stress induced the increase of gate-induced-drain-leakage(GIDL) current for p-MOS transistors of gate channel length 0.13 [${\mu}m$]. From the relation between the variation of threshold voltage and subthreshold slop by NBTI stress, it has been found that the dominant mechanism for device degradation is the interface state generation. From the GIDL measurement results, we confined that the EHP generation in interface state due to NBTI stress led to the increase of GIDL current. As a results, one should take care of the increased GIDL current after NBTI stress in the ultra-thin gate oxide device. Also, the simultaneous consideration of reliability characteristics and dc device performance is highly necessary in the stress parameters of nanoscale CMOS communication circuit design.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1093-1098
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• 2007

Tilting trains are currently in operation in 13 countries around the world. With the advances in tilting technology, verification of economic efficiency, and changes in economic situations, the introduction of tilting trains will rapidly spread across the globe. The measurement system is composed of the industrial computers installed in the console and the measurement racks mounted on each car. It is utilized to accumulate the data by the communication card and the optical cable. The optical cable and power cable are coupled at the connector located in joint of train to make easy to disconnect car each other. The signal conditioner is designed to choose and to extend the channel for each sensor readily. The sensor measurement rack has adopted as decentralization method. It is installed in each car to minimize the cable length. In also, it is manufactured based on 19"rack and covered to protect the cable. In this study, the programs for measurement and analysis were also developed to understand the traction system characteristics of TTX. Using this measurement system, we studied that acceleration test, re-powering test, and gradually powering test. The acceleration performance of TTX is 1.735 km/h/s, and it is inner standard value. The notch test result from 1 to 7 steps, DC link voltage is under standard value, and the output electric current of inverter is controlled normally. From the test results, we saw the performances of the traction systems are normal.

• Bulletin of the Korean Chemical Society
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• v.33 no.4
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• pp.1135-1140
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• 2012

An electrochromatographic microchip with carboxyl-group-derivatized mono-disperse silica packing was prepared from the corresponding colloidal silica solution by utilizing capillary action and self-assembly behavior. The silica beads in water were primed by the capillary action toward the ends of cross-patterned microchannel on a cyclic olefinic copolymer (COC) substrate. Slow evaporation of water at the front of packing promoted the self-assembled packing of the beads. After thermally binding a cover plate on the chip substrate, reservoirs for sample solutions were fabricated at the ends of the microchannel. The packing at the entrances of the microchannel was silver coated to fix utilizing an electroless silver-plating technique to prevent the erosion of the packed structure caused by the sudden switching of a high voltage DC power source. The electrochromatographic behavior of the microchip was explored and compared to that of the microchip with bare silica packing in basic borate buffer. Electrophoretic migration of Rhodamine B was dominant in the microchip with the carboxyl-derivatized silica packing that resulted in a migration approximated twice as fast, while the reversible adsorption was dominant in the bare silica-packed microchip. Not only the faster migration rates of the negatively charged FITC-derivatives of amino acids but also the different migration due to the charge interaction at the packing surface were observed. The electrochromatographic characteristics were studied in detail and compared with those of the bare silica packed microchip in terms of the packing material, the separation potential, pH of the running buffer, and also the separation channel length.