• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.149-149
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• 2009

실제 산업에서 가장 많이 사용하고 있는 in-line type system에서 Al-doped ZnO (AZO) 막을 bipolar pulsed DC sputtering을 이용해 증착하였다. 약 30 nm/sec의 속도로 기판을 타겟 좌우로 swing 하면서 동적 증착 공정을 한 AZO 박막의 columnar structure가 정적 증착일 때와 다른 형태의 zigzag-type columnar structure가 형성되었다. 투명전도막의 가장 중요한 특성인 비저항과 투과도가 동적 증착 공정일 때의 박막과 정적 증착 공정일 때의 박막이 각각 $2.5{\times}10^{-3}{\Omega}{\cdot}cm$, 78.5%와 $1.65{\times}10^{-3}{\Omega}{\cdot}cm$, 83.9% 였다. 이렇게 성장하는 막의 구조 형태에 따라 달라지는 특성 변화는 양산하는 현장에서 매우 중요한 것이며, 동적 증착 공정에서의 박막 특성 개선에 정적 증착 공정과는 다른 방법의 연구가 필요할 것이다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.103.1-103.1
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• 2017

Nanocrystalline HfN coatings were prepared by reactively sputtering Hf metal target with N2 gas using a magnetron sputtering system operated in DC and ICP (inductively coupled plasma) condition with various powers. The effects of ICP power, ranging from 0 to 200 W, on the coating microstructure, corrosion and mechanical properties were systematically investigated with FE-SEM, AFM, potentiostat and nanoindentation. The results show that ICP power has a significant influence on coating microstructure and mechanical properties of HfN coatings. With the increasing of ICP power, coating microstructure evolves from the columnar structure of DC process to a highly dense one. Average grain size and nano hardness of HfN coatings were also investigated with increasing ICP powers.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1791-1793
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• 1998

The thin film metal electrode for PDP needs low resistivity and strong adhesion. But the sputtered copper film is weak, in the adhesion between copper and glass. In this paper, we investigated the characteristics of resistivity and adhesion about Cu thin film using Ion Beam Assisted DC Planar Magnetron Sputtering(DCPM) Device.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.849-852
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• 2007

We studied ZnO thin films deposited with DC magnetron sputtering for channel layer of TFTs. After analyzing of the basic physical and chemical properties of ZnO thin films, we fabricated a TFTunit test cell. The field effect mobility of $1.8\;cm^2/Vs$ and threshold voltage of -0.7 V were obtained.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.342-347
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• 2011

Nanocrystalline TiN films were deposited on Si(100) substrate using asymmetric pulsed DC reactive magnetron sputtering. We investigated the growing behavior and the structural properties of TiN films with change of duty cycle and pulsed frequency. Grain size of TiN films were decreased from 87.2 nm to 9.8 nm with decrease of duty cycle. The $2{\theta}$ values for (111) and (200) crystallographic planes of the TiN films were also decreased with decrease of duty cycle. This shift in $2{\theta}$ could be attributed to compressive stress in the TiN coatings. Thus, the change of plasma parameter has a strong influence not only on the microstructure but also on the residual stresses of TiN films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.94-97
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• 1997

We investigated the sheet resistance properties of tungsten nitride thin films deposited by RF and DC sputtering system. It deposited at various conditions that determine the sheet resistance. The properties of the sheet resistance of these films were measured under various conditions. Sheet resistance analysed under the flow rate of the argon gas and contents of nitrogen from nitrogen-argon gas mixtures. We found that these sheet resistance were largely depend on the temperature of substrate, gas flow rate and RF power. Very high and low sheet resistance of tungsten films obtained by DC sputtering. As the increase of contents of nitrogen gas obtained from nitrogen-argon gas mixture, tungsten nitride thin films deposited by the reactive DC sputtering and the sheet resistance of these films were increased.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.45-46
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• 2008

Hard coatings of TiN which exhibit a large variation in their electrical resistivities, have been prepared in magnetron sputtering system using bipolar pulsed DC generator. TiN coatings have also been prepared using a DC generator in the same sputtering system under identical deposition conditions. Microstructural, Mechanical, Crystallographic properties of TiN films using continuous and bipolar pulsed DC generators were examined. Field emission scanning microscope and Nanoindenter have been used to characterize the coatings.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.373-378
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• 2006

We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with Al cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that OLED with Al cathode layer prepared by BCS has much lower leakage current density ($1{\times}10^{-5}\;mA/cm^2$ at -6 V) than that $(1{\times}10^{-2}{\sim}-10^0\;mA/cm^2)$ of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and DC/RF sputtering in fabrication process of organic based optoelectronics.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.45-51
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• 2010

We measured the temperature of target surface inducing by various physical phenomenon on magnetron sputtering target and confirmed the possibilities if the temperature distribution could affect plasma and deposited thin film. The target of magnetron sputtering has two types: round type and rectangular type. In a rectangular target, the concentrated discharge area by corner effect by magnetic field and non-uniform erosion of target are generated. And we found the generation of non-uniform temperature distribution on the target surface from this. This area was $10{\sim}20^{\circ}C$ higher than non-sputtering area. And if particles are generated during sputtering process, they were $20^{\circ}C$ higher than the area where is higher than non-sputtering area. These effects result in non-uniformity of thin films, crack of ceramic target, and shortening target life by non-uniform erosion.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.320-320
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• 2016

Nanocrystalline Carbon thin films have numerous applications in different areas such as mechanical, biotechnology and optoelectronic devices due to attractive properties like high excellent hardness, low friction coefficient, good chemical inertness, low surface roughness, non-toxic and biocompatibility. In this work, we studied the comparison of pure DC power and pulsed DC power in plasma sputtering process of carbon thin films synthesis. Using a close field unbalanced magnetron sputtering system, films were deposited on glass and Si wafer substrates by varying the power density and pulsed DC frequency variations. The plasma characteristics has been studied using the I-V discharge characteristics and optical emission spectroscopy. The films properties were studied using Raman spectroscopy, Hall effect measurement, contact angle measurement. Through the Raman results, ID/IG ratio was found to be increased by increasing either of DC power density and pulsed DC frequency. Film deposition rate, measured by Alpha step measurement, increased with increasing DC power density and decreased with pulsed DC frequency. The electrical resistivity results show that the resistivity increased with increasing DC power density and pulsed DC frequency. The film surface energy was estimated using the calculated values of contact angle of DI water and di-iodo-methane. Our results exhibit a tailoring of surface energies from 52.69 to $55.42mJ/m^2$ by controlling the plasma parameters.