• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.153-157
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• 2004

ITO thin films were deposited on PET and soda-lime glass substrates by a dc reactive magnetron sputtering of In-Sn alloy metal target without substrate heater and post-deposition thermal treatment. The dependency of rf-bias voltage and substrate power during deposition processing was investigated to control the electrical and optical properties of ITO films. The range of rf bias voltage is from 0 to -80 V and the substrate power is applied from 10 to 50 W. The minimum resistivity of ITO film is 5.4${\times}$10$^{-4}$ $\Omega$cm at 50 W power and rf-bias voltage of -20 V. The best transmittance of ITO films at 550 nm wavelength is 91 % in the substrate power of 30 W and rf-bias voltage of -80 V.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.49-55
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• 1992

We Have investigated the properties of the titanium nitrite films widely used in VLSI devices as diffusion barrier in Al-based metallization. TiN films were formed by reactive sputtering from Ti target in Ar-N$_2$ mixtures, varying deposition parameters such as N$_2$ partial pressure, substrate temperature, power, and total pressure. All the samples received the heat treatment at 45$0^{\circ}C$ for 30 min. The resulting films are characterized by mechanical stylus($\alpha$-step), x-ray diffraction(XRD), scanning electron microscopy(SEM), and four point probe method. The Tin film properties strongly depend on the deposition condition. The stoichiometry and Ti deposition rate are critically affected by nitrogen partial pressure, and the resistivity, in particular, is dependent on both the substrate temperature and sputtering power.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.7-9
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• 2008

ITO thin film is generally fabricated by various. methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) process is one of the suitable solutions which could solve the problems

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1357-1358
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• 2006

Indium tin oxide (ITO) thin film is a transparent electrode, which is widely applied to solar battery, illuminators, optical switches, liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light emitting displays (OLEDs) due to its easy formation on glass substrates, goof optical transmittance, and good conductivity. ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) processis one of the suitable solutions which could solve the problems.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.356-359
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• 1999

To obtain a biomaterial that has both biological affinity and high mechanical strength, hydroxyapatite granules were implanted into the surface of pure titanium film coated titanium alloy. The film was coated by reactive DC sputtering method on the alloy substrate. Hydroxyapatite granules (32- $38\mu\textrm{m}$ in diameter)were spread over titanium alloy substrate and pressed to implant the granules in the substrate. They can be implanted into substrate under 17MPa at $800^{\circ}C$ for 10minutes. The only tops of the granules were exposed and they were firmly stuck in substrate. The hydroxyapatite implanted titanium alloy composites were expected to be useful for biomaterials as artificial bones and dental roots.

• Korean Journal of Metals and Materials
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• v.50 no.3
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• pp.248-255
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• 2012

AlN thin films containing various amounts of Co, AlN-Co, and Al-Co alloy particles were prepared using a two-facing-target type dc reactive sputtering (TFTS) system. The as-deposited films exhibited the variable nature expected from an AlN-rich phase, and an amorphous-like phase, depending on the Co content in the films. Specific favorable microstructures were prepared by optimizing annealing conditions. Those microstructures and their magnetic properties and resistivity were investigated. As-deposited films showed very small saturation magnetization and an amorphous-like structure. However, when annealed, the as-deposited amorphous-like phase decomposes into phases of AlN, Co and Al-Co. These annealing induced changes in the microstructure improve the magnetization and resistivity of the films. Further improvement of soft magnetic properties could lead to the material being used for high density magnetic recording head material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1356-1361
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• 2004

High temperature superconducting coated conductor has a structure of ///. The buffer layer consists of multi-layer, this study reports the deposition method and optimal deposition conditions of YSZ(Yttria-stabilized zirconia) layer which plays a important part in preventing the elements of substrate from diffusing into the superconducting layer. YSZ layer was deposited by DC reactive sputtering technique using water vapor for oxidizing deposited elements on substrate. To investigate optimal thickness of YSZ film, four YSZ/CeO$_2$/Ni samples with different YSZ thickness(130 nm, 260 nm, 390 nm, and 650 nm) were prepared. The SEM image showed that the surface of YSZ layer was getting to be rougher as YSZ layer was getting thicker and the growth mode of YSZ layer was columnar grain growth. After CeO$_2$ layer was deposited with the same thickness of 18.3 nm on each four samples, YBCO layer was deposited by PLD method with the thickness of 300 nm. The critical currents of four samples were 0, 6 A, 7.5 A, and 5 A respectively. This shows that as YSZ layer is getting thicker, YSZ layer plays a good role as a diffusion barrier but the surface of YSZ layer is getting rougher.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.341-345
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• 2000

We investigated the microstructures and the electrical properties of $ZrO_2$thin films deposited by reactive DC magnetron sputtering on (100) Si with different deposition conditions and annealing treatments. The refractive index of the $ZrO_2$ thin films increased with annealing temperatures and deposition powers, and approached to the ideal value of 2.0~2.2. The $ZrO_2$thin films deposited at the room temperature are amorphous, and the films are polycrystalline at the deposition temperature of $300^{\circ}C$. Both the thickness of the interfacial oxide layer and the root-mean-square (RMS) value of surface roughness increased upon annealing in the oxygen ambient. The Cmax value and leakage current value decreased with the increase of thickness of the interfacial oxide thickness.

• Journal of the Korean Magnetics Society
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• v.11 no.3
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• pp.129-133
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• 2001

In this paper, we studied structural and magnetic properties of Ba-ferrite thin film deposited on Si(100) substrate with TiO$_2$ underlayer. Ba-ferrite thin films with TiO$_2$ underlayer were deposited by reactive RF/DC magnetron sputtering system at room temperature. TiO$_2$ underlayer was reactive sputtered with $O_2$. After deposition, the thin films were annealed at vatious temperatures to get the crystallized sample. Underlayer was used to prevent interdiffusion from Ba-ferrite thin film to substrate. The growth of Ba-ferrite thin films was influenced by TiO$_2$ underlayer. Easy magnetization direction is in-plane. From these results the Ba-ferrite film with TiO$_2$ underlayer can be used as longitudinal recording media.

• Journal of the Korean Magnetics Society
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• v.11 no.3
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• pp.122-128
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• 2001

In this paper, we studied structural and magnetic properties of Ba-ferrite thin film deposited on Si(100) substrate with various underlayers. Ba-ferrite thin films with various underlayers were deposited by reactive RF/DC magnetron sputtering system at room temperature. various underlayers was reactive sputtered with O$_2$. After deposition, the thin films were annealed at 850 $^{\circ}C$ to get the crystallized sample. Underlayers were used to prevent interdiffusion from Ba-ferrite thin film to substrate. The growth of Ba-ferrite thin films was influenced by underlayers. Easy magnetization direction is in-plane. From these results the Ba-ferrite film with various underlayers can be used as longitudinal recording media.