• Title/Summary/Keyword: DC reactive evaporation

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Study on depositing oxide films on Ni substrate for superconducting tape (초전도 테이프 제작을 위한 니켈기판상의 산화물 박막증착에 대한 연구)

  • Kim, Ho-Sup;Shi, Dongqui;Chung, Jun-Ki;Ha, Hong-Soo;Ko, Rock-Kil;Choi, Soo-Jeong;Park, Yu-Mi;Song, Kyu-Jeong;Yeom, Do-Jun;Park, Chan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.531-534
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    • 2004
  • 초전도 coated conductor는 보호층/초전도층/완충층/금속기판의 구조를 가지며 완충층은 다층산화물 박막으로 이루어져 있다. 본 연구에서는 니켈 기판의 원자가 초전도층으로 확산 침투하는 것을 방지하는 YSZ(Yttria Stabilized Zirconia) 박막의 증착방법 및 최적조건에 대하여 소개하고자 한다. 금속타겟을 사용하며 산화반응가스로서 수증기를 사용하는 것을 특징으로 하는 DC reactive sputtering을 이용하여 YSZ를 증착하였으며 기판 온도는 $850^{\circ}C$ 이며 증착시 수증기 분압은 1mTorr이었다. YSZ의 최적두께를 알아보기 위하여 $CeO_2(12.2nm)/Ni$ 상부에 130nm, 260nm, 390nm, 650nm로 두께를 달리하여 YSZ층을 증착하고 SEM으로 박막 표면상태를 관찰한 결과 columnar grain growth를 하며 두께가 두꺼워 질수록 표면조도가 증가함을 알 수 있었다. 4개의 각 시료위에 thermal evaporation 증착법을 이용하여 $CeO_2$를 18.3nm의 두께로 증착한 후 PLD를 이용하여 YBCO 초전도 박막을 300nm 두께로 증착하였고 77K, 0T에서 임계전류가 각각 0, 6A, 7.5A, 5A로 측정되었다. 이는 YSZ층의 두께가 두꺼워질수록 기판 구성원자의 확산방지역할을 충실히 하는 반면에 표면조도는 증가함을 알 수 있었다.

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Fabrication of Coated Conductor by Continuous PVD Methods (연속 공정 PVD 방법에 의한 Coated Conductor 제조)

  • Ko, Rock-Kil;Chung, Jun-Ki;Kim, Ho-Sup;Ha, Hong-Soo;Shi, Dongqi;Song, Kyu-Jeong;Park, Chan;Yoo, Sang-Im;Moon, Seung-Hyun;Kim, Young-Cheol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.11
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    • pp.1241-1245
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    • 2004
  • Continuous physical vapor deposition (PVD) method is one of many processes to fabricate long length coated conductor which is required for successful large-scale application of superconducting power devices. Three film deposition systems (pulsed laser deposition, sputtering, and evaporation) equipped with reel-to-reel(R2R) metal tape moving apparatus were installed and used to deposit multi-layer oxide thin films. Both RABiTS and IBAD texture templates are used. IBAD template consists of CeO$_2$(PLD)/YSZ(IBAD) on stainless steel(SS) metal tape, and RABiTS template has the structure of CeO$_2$/YSZ/Y$_2$O$_3$ which was continuously deposited on Ni-alloy tape using R$_2$R evaporation and DC reactive sputtering in a deposition system designed to do both processes. 0.4 m-long coated conductor with Ic(77 K) of 34 A/cm was fabricated using RABiTS template. 0.5 m and 1.1 m-long coated conductor with Ic(77 K) of 41 A/cm and 26 A/cm were fabricated using IBAD template.

Fabrication of SmBCO coated conductor using $CeO_2$ single buffer layer ($CeO_2$ 단일 완충층을 이용한 SmBCO 초전도테이프 제조)

  • Kim, T.H.;Kim, H.S.;Oh, S.S.;Yang, J.S.;Ko, R.K.;Ha, D.W.;Song, K.J.;Ha, H.S.;Jung, K.D.;Pa, K.C.;Cho, S.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.261-262
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    • 2006
  • High temperature superconducting coated conductor has multi-layer structure of protecting layer/superconducting layer/buffer layer/metallic substrate. The buffer layer consists of multi layer, and the architecture most widely used in RABiTS approach is $CeO_2$(cap layer)/YSZ(diffusion barrier layer)/$CeO_2$(seed layer). Multi-buffer layer deposition required many times and process. Therefore single buffer layer deposition study reduce 2G HTS manufacture efforts. Evaporation technique for single buffer deposition method is used for the $CeO_2$ layer. $CeO_2$ single buffer film could be achieved in the chamber. Detailed deposition conditions (temperature and partial gas pressure of deposition) were investigated for the rapid growth of high quality $CeO_2$ single buffer film.

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Preparation of MgO Protective Layer for AC PDP by Unbalanced Magnetron Sputtering (불평형 마그네트론 스파터링에 의한 AC PDP의 MgO 보호층 형성에 관한 연구)

  • Ko, Kwang-Sic;Kim, Young-Kee;Park, Jung-Tae;Kim, Eun-Chin;Cho, Jung-Soo;Park, Chung-Hoo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.142-145
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    • 2000
  • The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the dc bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.

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