• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.4
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• pp.65-73
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• 2003

This paper presents the implementation of an analog signal-processing ASIS to detect an angular velocity signal from a vibrator angular velocity detection sensor. The output of the sensor to be charge appeared as the variation of the capacitance value in the structure of the sensor was detected using charge amplifiers and a self oscillation circuit for driving the sensor was implemented with a sinusoidal self oscillation circuit using the resonance characteristics of the sensor. Specially an automatic gain control circuit was utilized to prevent the deterioration of self-oscillation characteristics due to the external elements such as the characteristic variation of the sensor process and the temperature variation. The angular velocity signal, amplitude-mod)Hated in the operation characteristics of the sensor, was demodulated using a synchronous detection circuit. A switching multiplication circuit was used in the synchronous detection circuit to prevent the magnitude variation of detected signal caused by the amplitude variation of the carrier signal. The ASIC was designed and implemented using 0.5${\mu}{\textrm}{m}$ CMOS process. The chip size was 1.2mm x 1mm. In the experiment under the supply voltage of 3V, the ASIC consumed the supply current of 3.6mA and noise spectrum density from dc to 50Hz was in the range of -95 dBrms/√Hz and -100 dBrms/√Hz when the ASIC, coupled with the sensor, was in normal operation.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.232-232
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• 1999

교류형 플라즈마 방전 표시기(AC Plasma Display Panel, AC PDP)에 사용되는 플라즈마는 그 부피가 너무 작아서 플라즈마에 변화를 일으키지 않고 그 물성을 관측하기란 쉬운일이 아니다. 그래서 주로 PDP 내의 물성을 관측하는 데 시뮬레이션에 의존하게 된다. 그 물성중에 PDP내의 전계 분포에 대한 정보는 방전의 형성 및 소멸에 대한 많은 단서를 제공하고 있다. 특히 AC PDP의 경우, 유전체에 형성되는 벽적하(wall charge)가 방전의 형성 및 PDP 구동에 중요한 역할을 하는데, 이는 PDP 내의 전계 분포를 살펴봄으로써 대략 예측할 수 있다. 본 연구에서는 시뮬레이션에 의존하지 않고, 직접 레이저 유도 형광법을 이용하여 AC PDP 내의 전계를 측정하였다. 방전 가스인 헬륨(He)의 에너지 준위는 전계의 크기에 따라 에너지 준위가 변화하여, Rydberg(n$\geq$8) 준위가 여러 개의 준위로 나누어지는 현상이 일어나는데, 이를 Stack 효과라고 한다. 따라서 전계의 세기가 커짐에 따라서 각 준위와 준위 사이 값(splitting)이 커지는데, 이를 이용하면 전계를 측정할 수 있다. 즉, 헬륨 원자를 여기시키는 레이저 파장을 변화시키면서 관측되는 레이저 유도 형광 신호를 관측하면, 준위의 splitting을 관측할 수 있다. 본 연구에서는 PDP 내의 전계의 시간적 변화를 관측하였다. 50%, 40kHz의 구형파를 PDP의 두 전극에 가하였을 때, 플라즈마가 켜진 상태뿐만 아니라 플라즈마가 꺼진 후에도 전계에 의한 Splitting 신호가 관측이 되었는데, 전계로 환산하였을 때, 그 값은 대략 수 kV/cm의 값을 갖았는데, 이는 wall charge에 의한 값으로 사료된다.결과로 생각되어진다.플라즈마의 강도값을 입력하여 플라즈마의 radiation을 검출하고, 스퍼터링 공정중 실질적인 in-situ 정보로 이용하였다. PEM을 통하여 In/Sn의 플라즈마 강도변화를 조사하였다. 초기 In/Sn의 플라즈마 강도(intensity)는 강도를 100하여, 산소를 주입한 결과, plasma intensity가 35 줄어들었고, 이때 우수한 ITO 박막을 얻을 수 있었다. Pulsed DC power를 사용하여 아크 현상을 방지하였다. PET 상에 coating 된 ITO 박막의 표면저항과 광투과도는 4-point prove와 spectrophotometer를 이용하여 분석하였고, AES로 박막의 두께에 따른 성분비를 확인하였다. ITO 박막의 광투과도는 산소의 유량과 sputter 된 In/Sn ion의 plasma emission peak에 따라 72%-92%까지 변화하였으며, 저항은 37$\Omega$/$\square$ 이상을 나타내었다. 박막의 Sn/In atomic ratio는 0.12, O/In의 비율은 In2O3의 화학양론적 비율인 1.5보다 작은 1.3을 나타내었다.로 보인다.하면 수평축과 수직축의 분산 장벽의 비에 따라 cluster의 두께비가 달라지는 성장을 볼 수 있었고, 한 축 방향으로의 팔 넓이는 fcc(100) 표면의 경우 동일한 Ed+Ep값에 대응하는 팔 넓이와 거의 동일한 결과가 나타나는 것을 볼 수 있다. 따라서 이러한 비대칭적인 모양을 가지는 성장의 경우도 cluster 밀도, cluster 모양, cluster의 양 축 방향 길이 비, 양 축 방향의 평균 팔 넓이로부터 각 축 방향의 분산 장벽을 얻어낼 수 있을 것으로 보인다. 기대할 수 있는 여러

• Korean Journal of Materials Research
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• v.7 no.1
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• pp.81-88
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• 1997

Vanadate glasses using $B_2O_3$ as a network former and with CuO additive were mainly investigated in relation to electrical properties. Crystalline phases formed by heat-treatment in each composition were examined and dc electrical conductivity changes of the glasses were analyzed. Crystalline phases were identified as $V_3O_5,\;a-CuV_2O_6\;and\;{\beta}-CuV_2O_6$ by XRD analysis. Crystallization degrees of $V_2O_5$ and ${\beta}-CuV_2O_6$ were little changed with heat-treatment time, but those of ${\alpha}u-CuV_2O_6$ were changed sharply with heat-treatment time. The more crystallization of ${\alpha}u-CuV_2O_6$ occurred, the higher electrical conductivity was observed. Electrical conductivities with $10^{-2}~10^{-4}/{\Omega}/cm$ at room temperature(303K) could be obtained by controlling the glass compositions. The electrical conductivities were increased with increasing of $V_20_5$ content and decreasing of alkality($CuO/B_2O_3$). In this study, electron was proved to be charge carrier by seebeck coefficient measurement. Accordingly, the glasses are believed to be n-type semiconductor. Calculated activation energies for the conduction were in the range 0.098-0.124 eV. Electrical conduction mechanism was small polaron hopping without showing variable range hopping in the temperature range $30~200^{\circ}C$.

• Korean Journal of Materials Research
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• v.17 no.8
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• pp.447-451
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• 2007

We investigated the dependence of the various annealing conditions and thickness ($6\sim45nm$) of the Ti-doped $Al_2O_3$ coating on the electrochemical properties and the capacity fading of Ti-doped $Al_2O_3$ coated $LiCoO_2$ films. The Ti-doped-$Al_2O_3$-coating layer and the cathode films were deposited on $Al_2O_3$ plate substrates by RF-magnetron sputter. Microstructural and electrochemical properties of Ti-doped-$Al_2O_3$-coated $LiCoO_2$ films were investigated by transmission electron microscopy (TEM) and a dc four-point probe method, respectively. The cycling performance of Ti-doped $Al_2O_3$ coated $LiCoO_2$ film was improved at higher cut-off voltage. But it has different electrochemical properties with various annealing conditions. They were related on the microstructure, surface morphology and the interface condition. Suppression of Li-ion migration is dominant at the coating thickness >24.nm during charge/discharge processes. It is due to the electrochemically passive nature of the Ti-doped $Al_2O_3$ films. The sample be made up of Ti-doped $Al_2O_3$ coated on annealed $LiCoO_2$ film with additional annealing at $400^{\circ}C$ had good adhesion between coating layer and cathode films. This sample showed the best capacity retention of $\sim92%$ with a charge cut off of 4.5 V after 50 cycles. The Ti-doped $Al_2O_3$ film was an amorphous phase and it has a higher electrical conductivity than that of the $Al_2O_3$ film. Therefore, the Ti-doped $Al_2O_3$ coated improved the cycle performance and the capacity retention at high voltage (4.5 V) of $LiCoO_2$ films.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.671-678
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• 2001

All solid-state thin film micro supercapacitor, which consists of $RuO_2$/LiPON/$RuO_2$ multi layer structure, was fabricated on Pt/Ti/Si substrate using a $RuO_2$ electrode. Bottom $RuO_2$ electrode was grown by dc reactive sputtering system with increasing $O_2/[Ar+O_2]$ ratio at room temperature, and a LiPON electrolyte film was subsequently deposited on the bottom $RuO_2$ electrode at pure nitrogen ambient by rf reactive sputtering system. Room temperature charge-discharge measurements based on a symmetric $RuO_2$/LiPON/$RuO_2$ structure clearly demonstrates the cyclibility dependence on the microstructure of the $RuO_2$ electrode. Using both glancing angle x-ray diffraction (GXRD) and transmission electron microscopy (TEM) analysis, it was found that the microstructure of the $RuO_2$ electrode was dependent on the oxygen flow ratio. In addition, x- ray photoelectron spectroscopy(XPS) examination shows that the Ru-O binding energy is affected by increasing oxygen flow ratio. Furthermore, TEM and AES depth profile analysis after cycling demonstrates that the interface layer formed by interfacial reaction between LiPON and $RuO_2$ act as a main factor in the degradation of the cyclibility of the thin film micro-supercapacitor.

• Journal of the Korean Ceramic Society
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• v.41 no.11
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• pp.858-863
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• 2004

The thermoelectric power, dc conductivity and magnetic properties of the cubic L $a_{2}$ 3/Ti $O_{2.84}$ were investigated. The thermoelectric power was negative below 350 K. The measured thermoelectric power of L $a_{2}$ 3/Ti $O_{2.84}$ increased linearly with temperature, in agreement with model proposed by Emin and Wood, and was represented by A+BT. Temperature dependence indicates that the charge carrier in this material is a small polaron. L $a_{2}$ 3/Ti $O_{2.84}$ exhibited a cross over from variable range hopping to small polaron hopping conduction at a characteristic temperature well below room temperature. The low temperature do conduction mechanism in L $a_{2}$ 3/Ti $O_{2.84}$ was analyzed using Mott's approach. Mott parameter analysis gave values for the density of state at Fermi level [N( $E_{F}$)] = 3.18${\times}$10$^{20}$ c $m^{-3}$ e $V^{-1}$ . The disorder energy ( $W_{d}$) was found to be 0.93 eV, However, it was noted that the value of the disorder energy was much higher than the high temperature activation energy. The exist linear relation between log($\sigma$T)와 1/T in the range of 200 to 300 K, the activation energy for small polaron hopping was 0.15 eV.

• KEPCO Journal on Electric Power and Energy
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• v.8 no.2
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• pp.159-179
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• 2022

Often a network becomes complex, and multiple entities would get in charge of managing part of the whole network. An example is a utility grid. While the entire grid would go under a single utility company's responsibility, the network is often split into multiple subsections. Subsequently, each subsection would be given as the responsibility area to the corresponding sub-organization in the utility company. The issue of how to make subsystems of adequate size and minimum number of interconnections between subsystems becomes more critical, especially in real-time simulations. Because the computation capability limit of a single computation unit, regardless of whether it is a high-speed conventional CPU core or an FPGA computational engine, it comes with a maximum limit that can be completed within a given amount of execution time. The issue becomes worsened in real time simulation, in which the computation needs to be in precise synchronization with the real-world clock. When the subject of the computation allows for a longer execution time, i.e., a larger time step size, a larger portion of the network can be put on a computation unit. This translates into a larger margin of the difference between the worst and the best. In other words, even though the worst (or the largest) computational burden is orders of magnitude larger than the best (or the smallest) computational burden, all the necessary computation can still be completed within the given amount of time. However, the requirement of real-time makes the margin much smaller. In other words, the difference between the worst and the best should be as small as possible in order to ensure the even distribution of the computational load. Besides, data exchange/communication is essential in parallel computation, affecting the overall performance. However, the exchange of data takes time. Therefore, the corresponding consideration needs to be with the computational load distribution among multiple calculation units. If it turns out in a satisfactory way, such distribution will raise the possibility of completing the necessary computation in a given amount of time, which might come down in the level of microsecond order. This paper presents an effective way to split a given electrical network, according to multiple criteria, for the purpose of distributing the entire computational load into a set of even (or close to even) sized computational loads. Based on the proposed system splitting method, heavy computation burdens of large-scale electrical networks can be distributed to multiple calculation units, such as an RTDS real time simulator, achieving either more efficient usage of the calculation units, a reduction of the necessary size of the simulation time step, or both.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.360-360
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• 2012

Zn-Sn-O (Zinc-Tin-Oxide; ZTO) thin films have been gaining extensive academic and industrial attentions owing to a semiconducting channel materials applicable to large-sized flat-panel displays. Due to the constituent oxides i.e., ZnO and SnO2, the resultant Zn-Sn-O thin films possess artificially controllable bandgaps and transmittances especially effective in the visible regime. The current approach employed RF sputtering in depositing the Zn-Sn-O thin films onto glass substrates at ambient conditions. This work places its main emphases on the electrical/optical features which are closely related to the combinations of processing variables. The electrical characterizations are performed using dc-based current-voltage characteristics and ac-based impedance spectroscopy. The optical constants, i.e., refractive index and extinction coefficient, are calculated through spectroscopic ellipsometry along with the estimation of bandgaps. The charge transport of the deposited ZTO thin films is based on electrons characteristic of n-type conduction. In addition to the basic electrical/optical information, the delicate manipulation of n-type conduction is indispensible in diversifying the industrial applications of the ZTO thin films as active devices in information and energy products. Ultimately, the electrical properties are correlated to the processing variables along with the underlying mechanism which largely determines the electrical and optical properties.

• Journal of Electrical Engineering and Technology
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• v.12 no.2
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• pp.594-600
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• 2017

HVDC transmission systems can be configured in many ways to take into account cost, flexibility and operational requirements. [1] For long-distance transmission, HVDC systems may be less expensive and suffer lower electrical losses. For underwater power cables, HVDC avoids the heavy currents required to charge and discharge the cable capacitance of each cycle. For shorter distances, the higher cost of DC conversion equipment compared to an AC system may still be warranted, due to other benefits of direct current links. HVDC allows power transmission between unsynchronized AC transmission systems. Since the power flow through an HVDC link can be controlled independently of the phase angle between the source and the load, it can stabilize a network against disturbances due to rapid changes in power. HVDC also allows the transfer of power between grid systems running at different frequencies, such as 50 Hz and 60 Hz. This improves the stability and economy of each grid, by allowing the exchange of power between incompatible networks. This paper proposed to establish Korean HVDC technology through a cooperative agreement between KEPCO and LSIS in 2010. During the first stage (2012), a design of the ${\pm}80kV$ 60MW HVDC bipole system was created by both KEPCO and LSIS. The HVDC system was constructed and an operation test was completed in December 2012. During the second stage, the pole#2 system was fully replaced with components that LSIS had recently developed. LSIS also successfully completed the operation test. (2014.3)

• Current Photovoltaic Research
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• v.5 no.1
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• pp.20-24
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• 2017

Recently, three-dimensional (3D) light harvesting structures are highly attracted because of their high light harvesting capacity and charge collection efficiencies. In this study, we have fabricated $Cu_2ZnSn(S_xSe_{1-x})_4$ based 3D thin film solar cells on PR patterned Molybdenum (Mo) substrates using photolithography technique. Specifically, Mo patterns were deposited on PR patterned Mo substrates by sputtering and the thin Cu-Zn-Sn stacked layer was deposited over this Mo patterns by sputtering technique. The stacked Zn-Sn-Cu precursor thin films were sulfo-selenized to form CZTSSe pattern. Finally, CZTSSe absorbers were coated with thin CdS layer using chemical bath deposition and ZnO window layer was deposited over CZTSSe/CdS using DC sputtering technique. Fabricated 3-D solar cells were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF) analysis, Field-emission scanning electron microscopy (FE-SEM) to study their structural, compositional and morphological properties, respectively. The 3% efficiency is achieved for this kind of solar cell. Further efforts will be carried out to improve the performance of solar cell through various optimizations.