• The Journal of the Korea institute of electronic communication sciences
• /
• v.11 no.4
• /
• pp.387-394
• /
• 2016

Today, hot rolled mill plant are currently operating 24 hours a day. The main processes of hot-rolled steel mill are Reheating Furnace, Roughing Mill, Fishing Mill and the Down Coiler. In the process checking over the thickness and width of rolled material, temperature control is an important factor. It is quite often the cause of the work breakdown and find a bad elements for product. After the shipping out the product, when a claim occurs requires an investigation. In each process of the conventional thickness gauge, width, and thermometer. Operation by an independent data acquisition and this monitoring is problematic and straining of the operator. The monitoring process the data of each function and incorporate monitoring results can also check future work. The installation of this system will improve our efficiency and productivity. In the rolling process by developing more efficient operating quality monitoring system, this will be made possible.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.326-326
• /
• 2010

The dielectric properties of continuous composition spreaded (CCS) $BaTiO_3-SrTiO_3$ (BST) thin filmsgrown at room temperature and annealed at different temperature ($350^{\circ}C$ and $550^{\circ}C$) were investigated. Moreover, electrical properties (leakage current and breakdown voltage) of CCS BST thin films were also investigated. The aluminum top-electrode, sized by $200{\times}200\;{\mu}m2$ and apart from each other by $300\;{\mu}m$, were deposited on the CCS BST thin films by the DC sputtering system. The dielectric properties of the CCS BST thin films were significantly influenced depending on the distance from $BaTiO_3$ and $SrTiO_3$ targets which was attributed to the $BaTiO_3-SrTiO_3$ composition ratio. The maps of dielectric constants and loss tangents were plotted via $1500\;{\mu}m$ - step measuring. The specific points showing the dielectric constant (k: ~300) and loss tangent (tand: ~0.008) at 1 MHz were found.

• Proceedings of the KIEE Conference
• /
• 2015.07a
• /
• pp.1202-1203
• /
• 2015

This paper describes the development of HVDC ${\pm}500kV$ polypropylene laminated paper (PPLP) mass-impregnated (MI) type cable system for HVDC transmission lines. As you know, mass-impregnated type cable generally has only insulating layer with the Kraft paper impregnated with a high-viscosity insulating compound. But polypropylene laminated paper is made of a layer of extruded polypropylene (PP) film sandwiched between two layers of Kraft paper. Thanks to PP film and its combination with Kraft paper, PPLP has higher AC, Impulse (Imp.) and DC breakdown (BD) strengths as well as lower dielectric loss than conventional Kraft paper insulation. In addition, Kraft MI cable has a limitation for the maximum conductor temperature as $55^{\circ}C$ But this PPLP MI cable has higher maximum conductor temperature than that of Kraft MI cable due to advantage of oil drainage characteristics. It is the most economic type of cable for HVDC transmission. Also HVDC ${\pm}500kV$ PPLP MI cable system was developed including land joints and outdoor-terminations. In order to prove the mechanical and electrical performances, the type test was carried out according to CIGRE recommendations. A full scale cable system has been tested successfully. And additional load cycle and polarity reversal tests on the cable system showed a higher performance compared with a similar mass impregnated paper cable.

• Korean Journal of Materials Research
• /
• v.9 no.5
• /
• pp.509-514
• /
• 1999

Interest in the integrated capacitors, which make it possible to reduce the size of and to obtain improved electrical performance of an electronic system, is expanding. In this study, $Ta_2$O\ulcorner thin film capacitors for MCM integrated capacitors were fabricated on a Upilex-S polymer film by DC magnetron reactive sputtering and the effects of low temperature annealing at various atmospheres and substrate surface morphology on the capacitor characteristics were discussed. The low temperature($150^{\circ}C$) annealing produced improved capacitor yield irrespective of the annealing at mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably due to the change of the $Ta_2$O\ulcorner film surface by oxygen, which was explained by conduction mechanism study. Leakage current and breakdown field strength of the capacitors fabricated on the Upilex-S film were 7.27$\times$10\ulcornerA/$\textrm{cm}^2$ and 1.0 MV/cm respectively. These capacitor characteristics were inferior to those of the capacitors fabricated on the Si substrate but enough to be used for decoupling capacitors in multilayer package. Roughness Analysis of each layer by AFM demonstrated that the properties of the capacitors fabricated on the polymer film were affected by the surface morphology of the substrate. This substrate effect could be classified into two factors. One is the surface morphology of the polymer film and the other is the surface morphology of the metal bottom electrode determined by the deposition process. Therefore, the control of the two factors is important to obtain improved electrical of capacitors deposited on a polymer film.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.12
• /
• pp.51-59
• /
• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.17 no.5
• /
• pp.401-408
• /
• 2012

A simple on-line elimination strategy of the dead time and inverter nonlinearity using the current slope information is presented for a PWM inverter-fed IPMSM (Interior Permanent Magnet Synchronous Motor) drive. In a PWM inverter-fed IPMSM drive, a dead time is inserted to prevent a breakdown of switching device. This distorts the inverter output voltage, resulting in a current distortion and torque ripple. In addition to the dead time, inverter nonlinearity exists in switching devices of the PWM inverter, which is generally dependent on operating conditions such as the temperature, DC link voltage, and current. The proposed scheme is based on the fact that the d-axis current ripple is mainly caused by the dead time and inverter nonlinearity. To eliminate such an influence, the current slope information is determined. The obtained current slope information is processed by the PI controller to estimate the disturbance caused by the dead time and inverter nonlinearity. The overall system is implemented using DSP TMS320F28335 and the validity of the proposed algorithm is verified through the simulation and experiments. Without requiring any additional hardware, the proposed scheme can effectively eliminate the dead time and inverter nonlinearity even in the presence of the parameter uncertainty.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.8
• /
• pp.13-19
• /
• 2001

We report on the fabrication and characterization of $Al_{0.3}Ga_{0.7}N$ HFETs with different barrier layer thickness which were grown using plasma-assisted molecular beam epitaxy (PAMBE). The barrier thickness of $Al_{0.3}Ga_{0.7}N$/GaN HFETs could be optimized in order to maximize 2 dimensional electron gas induced by piezoelectric effect without the relaxation of $Al_{0.3}Ga_{0.7}N$ layer. $Al_{0.3}Ga_{0.7}N$/GaN (20 nm/2 mm) HFET with 0.6 ${\mu}m$-long and 34 ${\mu}m$-wide gate shows saturated current density ($V_{gs}=1\;V$) of 1.155 A/mm and transconductance of 250 ms/mm, respectively. From high frequency measurement, the fabricated $Al_{0.3}Ga_{0.7}N$/GaN HFETs showed $F_t=13$ GHz and $F_{max}=48$ GHz, respectively. The uniformity of less than 5% could be obtained over the 2 inch wafer. In addition to the optimization of epi-layer structure, the relation between breakdown voltage and high frequency characteristics has been examined.

• Journal of the Korean Institute of Gas
• /
• v.1 no.1
• /
• pp.27-32
• /
• 1997

Continual monitoring of abnormal operating conditions i a key issue in maintaining high product quality and safe operation, since the undetected process abnormality may lead to the undesirable operations, finally producing low quality products, or breakdown of equipment. The statistical projection method recently highlighted has the advantage of easily building reference model with the historical measurement data in the statistically in-control state and not requiring any detailed mathematical model or knowledge-base of process. As the complexity of process increases, however, we have more measurement variables and recycle streams. This situation may not only result in the frequent occurrence of process Perturbation, but make it difficult to pinpoint trouble-making causes or at most assignable source unit due to the confusing candidates. Consequently, an ad hoc skill to monitor and diagnose in plat-wide scale is needed. In this paper, we propose a hierarchical plant-wide monitoring methodology based on hierarchical decomposition and principal component analysis for handling the complexity and interactions among process units. This have the effect of preventing special events in a specific sub-block from propagating to other sub-blocks or at least delaying the transfer of undesired state, and so make it possible to quickly detect and diagnose the process malfunctions. To prove the performance of the proposed methodology, we simulate the Tennessee Eastman benchmark process which is operated continuously with 41 measurement variables of five major units. Simulation results have shown that the proposed methodology offers a fast and reliable monitoring and diagnosis for a large scale chemical plant.