• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.8
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• pp.1260-1264
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• 1990

A voltage controlled CMOS operational transconductance amplifier (OTA), whose transconductance is directly proportional to the DC bias voltage, has been designed for many electronic circuit applications. It consists of a differential pair and three ourrent mirrors. The SPICE simulation shows that the conversion sensitivity of the OTA is 41.817 \ulcornerho/V and the linearity error is less than 0.402% over a bias voltage range from -2. OV to 1. OV. Electrically tunalble filters based on voltage controlled impedances, which are realized with OTA's, also have been designed. The SPICE simulation shows that a second-order bandpass filter, whose center frequency is 23KHz at -1. OV, has the conversion sensitivity 6.6KHz/V and the linearity error less than 0.822% over a voltage range from -2.OV tp 1.OV, Tne OTA has been laid out with the 3\ulcorner n-well CMOS design rule adopted in ISRC (inter-university semiconductor research center). The chip size was about $0.756x0.945mm^2$.

• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.921-924
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• 2003

A current-voltage relation for Positive Temperature Coefficient of Resistance (PTCR) ceramic was derived and compared with the experimental data. The new current-voltage relation was developed based on Heywangs double Schottky barrier model and a bias distribution across the grain boundary. The voltage limitation V < 4${\Phi}$$\sub$b/ suggested by Heywang is no longer necessary in the new expression for the voltage dependence of the resistance. The pulsed voltages were applied to the PTCR ceramic specimen in order to avoid possible temperature variation during the measurement.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.4
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• pp.316-324
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• 2010

In this paper, we design a 256 kbits EEPROM for a MCU (Microcontroller unit) with the wide voltage range of 1.8 V to 5.5 V. The memory space of the EEPROM is separated into a program and data region. An option memory region is added for storing user IDs, serial numbers and so forth. By making HPWs (High-voltage P-wells) of EEPROM cell arrays with the same bias voltages in accordance with the operation modes shared in a double word unit, we can reduce the HPW-to-HPW space by a half and hence the area of the EEPROM cell arrays by 9.1 percent. Also, we propose a page buffer circuit reducing a test time, and a write-verify-read mode securing a reliability of the EEPROM. Furthermore, we propose a DC-DC converter that can be applied to a MCU with the wide voltage range. Finally, we come up with a method of obtaining the oscillation period of a charge pump. The layout size of the designed 256 kbits EEPROM IP with MagnaChip's 0.18 ${\mu}m$ EEPROM process is $1581.55{\mu}m{\times}792.00{\mu}m$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.479-482
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• 2001

We have measured terahertz electromagnetic pulses when DC voltage from V up to 90V is applied to the transmitter chip excited by femto-second laser pulse. The femto-second excitation laser pulse was injected to transmitter chip. Finally, we are observed the amplitude of electromagnetic pulse and variation of spectrum. Consequently, the amplitude of spectrum was increased to high frequency according to increase of voltage. At that time, the signal-to-noise rate(SNR) is increased from 250:1 to 10, 000:1.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.5
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• pp.220-229
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• 2004

We have examined a technique of one-dimensional (1D) fluid modeling for radio-frequency Ar capacitively coupled plasmas (CCP) between unequal-sized powered and grounded electrodes. In order to simulate a practical CCP reactor configuration with a grounded side wall by the 1D model, it has been assumed that the discharge space has a conic frustum shape; the grounded electrode is larger than the powered one and the discharge space expands with the distance from the powered electrode. In this paper, we focus on how much a 1D model can approximate a 2D model and evaluate their comparisons. The plasma density calculated by the 1D model has been compared with that by a two-dimensional (2D) fluid model, and a qualitative agreement between them has been obtained. In addition, 1D and 2D calculation results for another reactor configuration with equal-sized electrodes have also been presented together for comparison. In the discussion, four CCP models, which are 1D and 2D models with symmetric and asymmetric geometries, are compared with each other and the DC self-bias voltage has been focused on as a characteristic property that reflects the unequal electrode surface areas. Reactor configuration and experimental parameters, which the self-bias depends on, have been investigated to develop the ID modeling for reactor geometry with unequal-sized electrodes.

• Journal of Power Electronics
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• v.16 no.3
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• pp.960-969
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• 2016

High-power three-level voltage-source converters are widely utilized in high-performance AC drive systems. In several ultra-power instances, the harmonics on the grid side should be reduced through multiple rectifications. A combined harmonic elimination method that includes a dual primary-side series-connected winding transformer and selective harmonic elimination pulse-width modulation is proposed to eliminate low-order current harmonics on the primary and secondary sides of transformers. Through an analysis of the harmonic influence caused by dead time and DC magnetic bias, a synthetic compensation control strategy is presented to minimize the grid-side harmonics in the dual primary side series-connected winding transformer application. Both simulation and experimental results demonstrate that the proposed control strategy can significantly reduce the converter input current harmonics and eliminates the DC magnetic bias in the transformer.

• Transactions on Electrical and Electronic Materials
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• v.5 no.3
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• pp.122-125
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• 2004

ITO films were deposited on polyethylene terephthalate substrate by a dc reactive magnetron sputtering using rf bias without substrate heater and post-deposition thermal treatment. The dependency of rf substrate bias on plasma sputter processing was investigated to control energetic particles and improve ITO film properties. The substrate was applied negative rf bias voltage from 0 to -80 V. The composition of indium, tin, and oxygen atoms is strongly depended on the rf substrate bias. Oxygen deficiency is the highest at rf bias of -20 V. The electrical and optical properties of ITO films also are dominated obviously by negative rf bias.

• Korean Journal of Optics and Photonics
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• v.17 no.2
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• pp.175-180
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• 2006

A single sideband(SSB) modulator operating at 5.5 GHz was fabricated by polarization inversion techniques. The dimension of domain inversion in a $LiINbO_3$ Mach-Zehnder structure was precisely controlled so that the RF signal applied on two Mach-Zehnder arms gives rise to $90^{\circ}$ effective phase difference. The single sideband suppression was maximized by optimization of the polarization status of the optical input and by the DC bias value. The fabricated device showed the center frequency of 5.8 GHz and the maximum sideband suppression of 33dB, where the bandwidth of 15 dB sideband suppression ranged over a 2.5 GHz span. The optical phase delay could be regulated by the DC bias voltage, fur example, the enhanced optical modulation sideband was distinctively switched from the upper sideband to the lower sideband by changing the DC bias voltage from 1.9 V to -10.6 V.

• Progress in Superconductivity and Cryogenics
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• v.14 no.1
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• pp.1-3
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• 2012

LMO($LaMnO_3$) buffer layer of superconducting coated conductor was deposited on IBAD-MgO template in the plasma atmosphere at $650^{\circ}C$ which is relatively low compared with conventional deposition temperature of more than $800^{\circ}C$. Deposition method of LMO was DC sputtering, and target and deposition chamber were connected to the cathode and anode respectively. When DC voltage was applied between target and chamber, plasma was formed on the surface of target. The tape substrate was located with the distance of 10 cm between target and tape substrate. When anode bias was connected to the tape substrate, electrons were attracted from plasma in target surface to the tape substrate, and only tape substrate was heated by electron bombardment without heating any other zone. The effect of electron bombardment on the surface of substrate was investigated by increasing bias voltage to the substrate. We found out that the sample of electron bombardment had the effect of surface heating and had good texturing at low controlling temperature.

• Journal of the Korean Vacuum Society
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• v.14 no.1
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• pp.17-23
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• 2005

Glow discharge mass spectrometry(GDMS) was used to determine the impurity concentrations of the deposited Cu films and the 6N Cu target. Cu films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -50 V using a non-mass separated ion beam deposition method. Since do GDMS has a little difficulty to apply to thin films because of the accompanying non-conducting substrate, we have used an aluminum foil to cover the edge of the Cu film in order to make an electrical contact of the Cu film deposited on the non-conducting substrate. As a result, the Cu film deposited at the substrate bias voltage of -50 V showed lower impurity contents than the Cu film deposited without the substrate bias voltage although both the Cu films were contaminated during the deposition. It was found that the concentration change of each impurity in the Cu films by applying the negative substrate bias voltage is related to the difference in their ionization potentials. The purification effect by applying the negative substrate bias voltage might result from the following reasons: 1) Penning ionization and an ionization mechanism proposed in the present study, 2) difference in the kinetic energy of accelerated Cu+ ions toward the substrate with/without the negative substrate bias voltage.