• 전기학회논문지
• /
• 제65권11호
• /
• pp.1919-1924
• /
• 2016

In general, Diode rectifier has been applied to DC traction power supply system. Diode has some characteristics which is voltage drop in inverse proportion of load because of non-controlled switch, and cannot flow a current in reverse bias. So, voltage drop occurs frequently, and regenerated power cannot use in substation. The PWM rectifier is able to control output voltage constantly to reduce voltage drop and to use regeneration power without additional inverter. This paper proposes analysis algorithm for DC traction power supply system with PWM rectifier.

• 조명전기설비학회논문지
• /
• 제29권4호
• /
• pp.11-17
• /
• 2015

While most switching devices are based on PN junctions, a single layer can realize a switching device in the case of vanadium dioxide($VO_2$) thin films. In this paper, bidirectional current triggering(switching) is demonstrated in a two-terminal planar device based on a $VO_2$ thin film by illuminating the film with an infrared laser at 1550nm. To begin with, a two-terminal planar device, which had a $30{\mu}m$-wide $VO_2$ conducting layer and an electrode separation of $10{\mu}m$, was fabricated. A specific bias voltage range for stable bidirectional laser triggering was experimentally obtained by measuring the current-voltage characteristics of the fabricated device in a current-controlled mode. Then, by constructing a test circuit composed of the device, a standard resistor, and a DC voltage source, connected in series, the transient response of laser-triggered current and its response time were investigated with a DC bias voltage, included in the above specific bias voltage range, applied to the device. In the test circuit with a DC voltage source of 3.35V and a $10{\Omega}$ resistor, bidirectional laser triggering could be realized with a maximum on-state current of 15mA and a switching contrast of ~78.95.

• 전기전자학회논문지
• /
• 제24권1호
• /
• pp.59-66
• /
• 2020

최근 휴대용 통신기기와 스마트 디스플레이의 결합은 휴대가 용이하고 이동을 하면서 모든 작업을 할 수 있다. 이에 본 논문에서는 휴대용 통신기기에서 저가격의 높은 투명전극을 찾기 위해 여러 가지 ITO(Indium Tin Oxide) 박막에 대해 연구하였다. ITO 박막은 DC 마그네트론 스펏터를 사용하였으며 1 분위기압을 1mTorr 증가 간격으로, 2 바이어스 전압은 10V 간격으로 변화시켜 측정하였다. 두께와 굴절율은 일립소미터를 사용하였으며 막의 단면과 표면의 형상은 주사전자현미경을 사용하여 조사하였다. 분석 결과를 통해 바이어스 전압이 300V 이상일 경우에 명확한 증착이 나타났으며 추가로 전압이 증가함에 따라 전체적으로 증착률이 증가하였다. 330V 조건에서 증착률이 가장 높았으며 뚜렷한 결정립이 관찰되었다.

• 공업화학
• /
• 제18권1호
• /
• pp.24-28
• /
• 2007

$Cl_2/Ar$ 가스의 고밀도 플라즈마를 이용하여 ZnO 박막에 대한 식각이 연구되었다. $Cl_2$ 가스의 농도, coil rf power, dc-bias 전압, 그리고 공정 압력을 변화시켜서 ZnO 박막의 식각특성을 체계적으로 조사하였다. $Cl_2$ 가스의 농도가 증가할수록 ZnO 박막의 식각 속도는 증가하였고, 식각된 패턴 주변의 재증착은 감소되었지만 식각된 패턴의 측면 경사는 낮아졌다. Coil rf power와 dc-bias 전압이 증가할수록 ZnO 박막의 식각 속도가 증가하였고, 식각 프로파일이 개선되었다. 공정 압력이 증가 할수록 ZnO 박막의 식각 속도가 미세하게 증가하였으나 식각 프로파일의 변화는 관찰되지 않았다. 이러한 결과들을 토대로 하여 ZnO 박막의 최적의 식각 조건이 설정되었다. 재증착이나 잔류물이 없이 대략 $75^{\circ}{\sim}80^{\circ}$의 높은 이방성 식각을 갖는 ZnO 박막의 식각이 20% $Cl_2$ 가스의 농도, 1000 W의 coil rf power, 400 V의 dc-bias 전압, 그리고 5 mTorr의 공정 압력에서 성공적으로 이루어졌다.

• 한국초전도저온공학회:학술대회논문집
• /
• 한국초전도저온공학회 2002년도 학술대회 논문집
• /
• pp.127-130
• /
• 2002

Step-edge dc SQUID magnetometers have been fabricated on sapphire substrate. Ce$O_{2}$ buffer layer and $YBa_{2}$$Cu_{3}$ $O_{7}$(YBCO) films were deposited in-situ on the low angle (~$35^{\circ}$)steps formed on the substrates. Typical 5-$\mu$m-wide junction has $R_{N}$ of 4 $\Omega$ and $I_{c}$ of 60 $\mu$A with $I_{c}$$R_{N}$ product of 240 $\mu$V at 77 K. According to applied bias current, depth of voltage modulation was changed and maximum voltage was measured 100~300 fT/$\checkmark$ Hz at 100 Hz, and about 1.5 pT/$\checkmark$ Hz at 1 Hz. For ac bias reversal method, field noise was decreased in the 1/f region. The QRS peak of magneto-cardiogram was measured 50 pT in the magnetically shielded room.

• Journal of Electrical Engineering and Technology
• /
• 제13권2호
• /
• pp.781-789
• /
• 2018

This paper proposes a new approach utilizing empirical mode decomposition (EMD) reconstruction to process vibration signals of a transformer under DC bias caused by high voltage direction transmission (HVDC), which is the potential cause of additional vibration and noise from transformer. Firstly, the Calculation Method is presented and a 3D model of transformer is simulated to analyze transformer deformation characteristic and the result indicate the main vibration is produced along axial direction of three core limbs. Vibration test system has been built and test points on the core and shell of transformer have been measured. Then, the signal reconstruction method for transformer vibration based on EMD is proposed. Through the EMD decomposition, the corrupted noise can be selectively reconstructed by the certain frequency IMFs and better vibration signals of transformer have been obtained. After EMD reconstruction, the vibrations are compared between transformer in normal work and with DC bias. When DC bias occurs, odd harmonics, vibration of core and shell, behave as a nonlinear increase and the even harmonics keep unchanged with DC current. Experiment results are provided to collaborate our theoretical analysis and to illustrate the effectiveness of the proposed EMD method.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2003년도 추계학술발표회초록집
• /
• pp.22-23
• /
• 2003

• 한국전기전자재료학회논문지
• /
• 제20권8호
• /
• pp.706-710
• /
• 2007

Ti-containing amorphous carbon (a-C:Ti) films shows attractive mechanical properties such as low friction coefficient, good adhesion to various substrate and high wear resistance. The incorporation of titanium in a-C films is able to improve the electrical conductivity, friction coefficient and adhesion to various substrates. In this study, a-C:Ti films were depositied on Si wafer by closed-field unbalanced magnetron (CFUBM) sputtering system composed two targets of carbon and titanium. The tribological properties of a-C:Ti films were investigated with the increase of DC bias voltage from 0 V to - 200 V. The hardness and elastic modulus of films increase with the increase of DC bias voltage and the maximum hardness shows 21 GPa. Also, the coefficient of friction exhibites as low as 0.07 in the ambient. In the result, the a-C:Ti film obtained by CFUBM sputtering method improved the tribological properties with the increase of DC bias volatage.

• 한국표면공학회지
• /
• 제32권2호
• /
• pp.93-99
• /
• 1999

Surface polymer layer formed on the silicon wafer during the oxide overetching using $C_4F_8$/ helicon wave plasmas and their characteristics were investigated using spectroscopic elipsometry, X-ray photoelectron spectroscopy, and secondary ion mass spectrometry. Overetch percentage and dc-self bias voltage were varied to investigate the effects on the characteristics of the polymers remaining on the overetched silicon surface. The increase of bias voltage from -80 volts to -120 volts increased the C/F ratio and carbon bondings such as C-C, $C-CF_x$/, and C-Si in the polymer while reducing the thickness of the polymer layer. However, the increase of the overetch percentage from 50% to 100% did not change the composition of the polymer layer and the carbon bondings in the polymer layer remained same even though it increased the polymer thickness. The polymer layer formed at the higher dc-self bias voltage was more difficult to be removed by the following various post-etch treatments compared to that formed at the longer overetch percentage.

• 한국정보통신학회:학술대회논문집
• /
• 한국정보통신학회 2016년도 추계학술대회
• /
• pp.533-536
• /
• 2016

본 논문에서는 진동 에너지를 이용한 MPPT 제어기능을 갖는 에너지 하베스팅 회로를 설계하였다. Body-bias technique과 bulk-driven technique을 이용하여 저전압에서도 높은 효율특성을 갖는 고성능 AC-DC 변환기를 제안하고 진동에너지 하베스팅 회로 설계에 적용하였다. MPPT (Maximum Power Point Tracking) 제어는 진동소자의 개방회로전압과 MPP 전압간의 관계를 이용하였으며, 진동소자의 개방회로전압을 주기적으로 샘플링 함으로써 이를 이용해 MPPT 기준전압을 생성하고, 이를 기준으로 부하로의 에너지 공급을 제어한다. $0.35{\mu}m$ CMOS 공정으로 설계된 회로의 칩 면적은 $1.21mm{\times}0.98mm$이다.