• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 추계학술대회 초록집
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• pp.219-220
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• 2009

이번 실험에서는 TiN의 건식 식각 특성을 연구하기 위해 $BCl_3/Ar/N_2$ 유도 결합플라즈마를 이용하였다. BCl3와 Ar의 가스 비율이 $BCl_3$ (5 sccm)/Ar (15 sccm)/N (4 sccm) 인 상황에서 RF power와 DC bias, 그리고 process pressure을 식각변수로 설정하였다. TiN의 식각률은 Alpha-step 500으로 측정하였고 표면의 식각 후 화학반응은 XPS로 측정하였다.

• 한국전자파학회논문지
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• 제8권1호
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• pp.94-99
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• 1997

발진기의 위상잡음에 영향윤 주는 요인은 여러 가지가 있다. 그러나 발진기의 위상잡음은 주로 캐리어(carrier)와 l/f의 특성을 잦는 DC 근처 저주파 잡음과의 혼합으로 발생되므로, 저주파 플리커 잡음에 의해 지배된다. 본 논문에서는 능동 바이어스 회로로 구현된 저주파 궤환회로를 이용하여 플리커 잡음의 영향을 최소화함으로써 발진기의 위상잡음을 줄이는 기법을 제안하고, DBS 수신기에 사용 가능한 DRO를 제작하였다. 제작된 DRO의 위상잡음을 측정한 갤과 10 kHz 옵셋 주파수에서 약 -92 dBc/Hz로 제안된 방볍이 상당히 효과적임을 확인 하였다

• 한국정보통신학회논문지
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• 제16권10호
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• pp.2237-2246
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• 2012

본 논문에서는 구강센서를 소형화하고 제조 원가를 낮추기 위해 구강센서에서 필요로 하는 바이어스 회로를 구강센서 칩 내부에서 만들어주었다. 제안된 DC-DC 변환기 회로는 기준전류 발생기(reference current generator) 회로의 IREF를 이용하여 전압 레귤레이터(voltage regulator)에 필요한 기준전류와 바이어스 전류를 각각 공급해준다. 이들 전류가 각각의 전압 레귤레이 회로에서 해당되는 기준전압을 생성하여 부궤환(negative feedback)에 의해 목표전압을 regulation하게 된다. 그리고 기준전류가 전류 복사비(current mirror ratio)에 의해 mirroring되어 정전류인 IB0/IB1을 공급해주고, VREF 전압을 공급해주도록 설계하였다. $0.18{\mu}m$ X-ray CMOS 이미지 센서 공정을 이용하여 설계된 구강센서의 DC-DC 변환기의 출력 전압의 평균 전압, ${\sigma}$와 $4{\sigma}$는 양호한 측정 결과를 얻었다. 그리고 line-pair pattern 영상은 blurring 없이 높은 해상도 특성을 보였으며, 좋은 구강 영상을 획득하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.74-74
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• 2009

Titanium nitride has been used as hardmask for semiconductor process, capacitor of MIM type and diffusion barrier of DRAM, due to it's low resistivity, thermodynamic stability and diffusion coefficient. Characteristics of the TiN film are high intensity and chemical stability. The TiN film also has compatibility with high-k material. This study is an experimental test for better condition of TiN film etching process. The etch rate of TiN film was investigated about etching in $BCl_3/Ar/O_2$ plasma using the inductively coupled plasma (ICP) etching system. The base condition were 4 sccm $BCl_3$ /16 sccm Ar mixed gas and 500 W the RF power, -50 V the DC bias voltage, 10 mTorr the chamber pressure and $40\;^{\circ}C$ the substrate temperature. We added $O_2$ gas to give affect etch rate because $O_2$ reacts with photoresist easily. We had changed $O_2$ gas flow rate from 2 sccm to 8 sccm, the RF power from 500 W to 800 W, the DC bias voltage from -50 V to -200 V, the chamber pressure from 5 mTorr to 20 mTorr and the substrate temperature from $20\;^{\circ}C$ to $80\;^{\circ}C$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권1호
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• pp.35-40
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• 2005

In this paper, we designed and fabricated the variable impedance line by using the DGS(Defected Ground Structure) which is useful in mounting the external lumped elements. Also we used a varactor diode as Control device stuff at the proposed variable impedance line. We are able to change the impedance of transmission line as varied the capacitance of varactor diode by adjusting DC bias. The impedance variation of the proposed DGS line is about maximum 70 Ω. We will study about the application of DAM(Direct antenna modulation) in the future work.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.100-102
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• 2007

In this paper, a modified multi-level convert for low cost high speed switched reluctance (SR) drive is proposed The proposed multi-level converter has reduced number of power switches and diodes than that of a conventional asymmetric converter for SRM, and lower voltage rating of the dump capacitor comparing with energy efficient c-dump converter. It can supply five operating modes that is boosted, DC-link, zero, negative bias and negative boosted voltage. The proposed multi-level converter has fast excitation and demagnetization modes of phase current, so dynamic response can be achieved. The proposed multi-level converter is verified by computer simulation and experimental results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.118-121
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• 1995

Fabrication and a new analytical expression for the capacitance characteristics of hydrogenerated amorphous silicon thin film transistors(a-Si:H TFTs) is presented and experimentally verified. The results show that the experimental capacitance characteristics are easily measeured. Measured transfer and DC output characteristic curves of a-Si:H TFT are similar to those of the standard MOSFET-IC. The capacitances on bias voltages are in good agreement with experimental data. This capacitance characteristics is suitable for incorporation into a circuit simulator and can be used for computer-aided design of a-Si thin film transistor integrated circuits.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.748-752
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• 2004

The Hydrogenated amorphous carbon (a-C:H) thin films are deposited to fabricate suppored layer on silicon substrate with a closed field unbalanced magnetron(CFUBM) sputtering system. This study focuses on the characteristic of Diamond like carbon (DLC) films and Pb(Zr,Ti)$O_3$ (PZT) films for membrane structure. The deposition rate and the surface roughness of DLC fims decrease with DC bias voltage. hardness is 26 GPa at -200 V. Interface of DLC/Si and Pt/DLC layers was excellent.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2015년도 추계학술대회 논문집
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• pp.9-10
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• 2015

EI core inductor in power electronic circuit simulation is usually assumed as linear by using matrix model. However, nonlinear magnetic characteristics such as B-H characteristic are also important for the accurate simulation of the circuit behavior. To model nonlinear magnetic characteristics of EI core inductor with only DC bias table, this paper presents a method in PLECS simulation tool which is a commercially available simulation tool for power electronics circuit analysis. Comparing with ideal matrix model, the simplification and accuracy are improved by this modeling method. Also, compared to analysis by FEM, it is much simpler, faster and easier to simulate with power electronics circuit. Validation of the proposed model was verified by simulation and experiment results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.213-216
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• 2001

Etching behaviors of ferroelectric YMn $O_3$ thin films were studied by an inductively coupled plasma (ICP). Etch characteristic on ferroelectric YMn $O_3$ thin film have been investigated in terms of etch rate, selectivity and etch profile. The maximum etch rate of YMn $O_3$ thin film is 300 $\AA$/min at Ar/C $l_2$ of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of 3$0^{\circ}C$. Addition of C $F_4$ gas decrease the etch rate of YMn $O_3$ thin film. From the results of XPS analysis, Y $F_{X}$ compunds were found on the surface of YMn $O_3$ thin film which is etched in Ar/C1/C $F_4$ plasma. The etch profile of YMn $O_3$ film is improved by addition of C $F_4$ gas into the Ar/C $l_2$ plasma. These results suggest that fluoride yttrium acts as a sidewall passivants which reduce the sticking coefficient of chlorine on YMn $O_3$.>.