• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.169-169
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• 2006

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.05a
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• pp.55-56
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• 2000

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.102-102
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• 2016

본 연구에서는 직류 전원(direct current; DC)을 이용한 스퍼터링과 고전력펄스 마그네트론 스퍼터링(high-power impulse magentron sputtering; HIPIMS)의 두 가지 방법과 빗각 증착을 적용하여 제조한 티타늄 질화물(TiN) 박막의 미세구조 변화가 물성에 미치는 영향을 확인하였다. TiN 박막은 99.5%의 Ti 타겟을 사용하고, Ar가스와 $N_2$ 분위기에서 스테인리스(SUS304)와 초경(cdmented carbide; WC-10wt.%Co) 기판위에 코팅하였다. 기판은 알코올과 아세톤으로 초음파 세척을 실시한 후 진공용기에 장착하고 기본 진공도인 ${\sim}2.0{\times}10^{-5}Torr$ 까지 진공배기를 실시하였다. 기판과 타겟 간의 거리는 DC 스퍼터링은 10 cm, HIPIMS 스퍼터링은 8.5 cm 이었다. 진공용기의 압력이 기본 진공도까지 배기되면 Ar 가스를 ${\sim}10^{-2}Torr$로 주입한 후 기판에 라디오 주파수(radio frequency; RF) 전원으로 약 -800 V의 전압을 인가하여 글로우 방전을 발생시키고 약 30 분간 청정을 실시하였다. 기판의 청정이 끝난 후 기본 진공도까지 배기한 후 Ar와 $N_2$ 가스를 ${\sim}10^{-3}Torr$로 주입하여 TiN 코팅을 실시하였다. 빗각의 크기는 $45^{\circ}$와 $-45^{\circ}$이며, TiN 박막의 총 두께는 약 $2.5{\sim}4.0{\mu}m$ 로 유지하였다. 공정조건에 따라 TiN 박막의 주상정은 형태와 기울어진 각도가 다른 것을 확인하였다. DC 스퍼터링으로 제조된 TiN 박막은 기판홀더에 약 -100 V 의 bias 전압을 인가하면 인가하지 않은 박막에 비해 치밀한 박막의 성장과 경도 값도 증가하는 사실을 확인하였다. 또한 빗각을 적용하고 bias 전압을 인가하지 않은 시편에서 박리현상이 일어났다. HIPIMS로 제조한 TiN 박막은 bias 전압을 인가한 박막과 인가하지 않은 박막의 주상정 형상과 경도 값에 큰 차이가 없었으며, 박막의 박리현상은 모든 시편에서 일어나지 않았다. DC 스퍼터링으로 제조한 TiN 박막은 bias 전압을 인가하지 않으면 색상이 노란색이 아닌 갈색으로 나타났으며, HIPIMS으로 제조한 박막은 bias 전압 인가 유무에 상관없이 노란색 색상을 나타냈다. 앞서 설명한 DC 스퍼터링과 HIPIMS의 공정조건에 따라 나타난 박막의 경도, 색상, 물성변화 차이는 DC 스퍼터링보다 높은 HIPIMS의 이온화율에서 기인한 것으로 생각된다. 본 연구결과를 이용하면 다양한 형태의 박막 구조 제어가 가능하고 이러한 미세구조 제어를 통해서 박막의 물성도 제어가 가능할 것으로 판단된다.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.61 no.3
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• pp.116-121
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• 2012

Recently, in the field of renewable energy such as solar cells including the semiconductor and display industries, thin film deposition process is being diversified. Furthermore, to deal with trend of making high-quality and fast, the high-capacity and output plasma power supply which can control high density plasma is required. The biggest problem is arc discharge caused by using high voltage power supply. Thus, the key function of plasma power supply is to prevent arc discharge and there is a need to maintain the possible minimum arc energy. In DC sputtering power supply, on a periodic basis (-)voltage powering up is able to significantly reduce arcing, as well as arc discharge prevention, and maintaining uniform charge density. This conventional method for powering up (-)voltage requires heavy mutual inductance of the transformer to avoid distortion problem of the output voltage. This study is about energy recovery circuit for arc discharge prevention in sputtering plasma power supply. By using energy recovery circuit, it is possible to reduce the mutual inductance and size of the transformer dramatically, prevent distortion of the output voltage and has a stable output waveform. This work was proved through simulation and experimental study.

• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.192-197
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• 2017

A 6-way-cross consisting of a 2.75-inch CF flange was used as a main chamber on a PFEIFFER VACUUM TMP station based on a 67 l / sec turbo molecular pump and a diaphragm pump to produce a magnet array with a volume ratio of 5.5: 1.A 1-inch diameter copper target and graphite target were fabricated using MDX-1.5K from Advanced Energy Industries, Inc as a DC power supply. Ion current density of copper target and graphite target was measured by unbalanced magnetron sputtering. The basic pressure condition was $6.3{\times}10^{-7}mbar$ and the process pressure was Ar 50 sccm at $1.0{\times}10^{-2}mbar$ (7.5 mTorr) in the Ar atmosphere. Therefore, the relative density of copper ions reaching the substrate with the measured ion current density was derived.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.276-276
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• 2008

Transparent and conducting indium tin oxide (ITO) and ITO/Nickel/ITO(INI) multilayered films were prepared on glass substrates by a magnetron sputtering without intentional substrate heating. The RF(13.56MHz) and DC power were applied to ITO and Nickel target, respectively. The thickness of ITO, Ni and ITO films were kept constantly at 50, 5 and 45 nm. In order to consider the effect of post deposition vacuum annealing in vacuum on the physical and optoeletrical properties of INI films, optical transmittance, electrical resistivity, crystallinity of the films were analyzed. From the observed result, it may conclude that the optoelectrical properties of the INI films were dependent on the post deposition annealing. For the INI films annealed at $300^{\circ}C$, the films have a polycrystalline structure with (110), (200), (210), (211) and (300). The resistivity of the films were $4.0\times10^{-4}{\Omega}cm$ at room temperature. As the annealing($300^{\circ}C$), resistivity decreased to $2.8\times10^{-4}{\Omega}cm$. And also the optical transmittance decreased from 79 to 70 % at 550nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.298-299
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• 2011

최근 입력소자로 활용되는 터치스크린은 키보드나 마우스와 같은 입력장치를 사용하지 않고, 스크린에 손가락, 펜 등을 접촉하여 입력하는 방식이다. 터치패널의 구현방식에 따라 저항막(Resistive) 방식, 정전용량(Capacitive) 방식, SAW (Surface Accoustic Wave; 초음파) 방식, IR (Infrared; 적외선) 방식등으로 구분된다. 특히 최근 관심을 받고 있는 IR 방식은 적외선이 사람의 눈에는 보이지 않으나, 직진성을 가지고 있어 장애물이 있으면 차단되는 특성을 이용한 방식이다. IR방식의 터치패널은 발광(Light emitting)소자와 수광(Light detecting)소자가 마주하도록 배치되어 터치에 의해 차단된 좌표를 인식하게 되며, ITO 필름 등이 필요 없어 Glass 1장으로도 구현이 가능하며 투과율이 우수하다. 이러한 IR 방식의 터치패널을 제작하기 위하여 사용된 IR 광검출기는 광학적 band-gap이 작은 박막물질을 필요로 한다. 본 연구에서는 IR 광검출을 위한 물질로 SiGe를 co-sputtering 기법을 이용하여 성장시켰다. 일반적으로 SiGe 박막을 성장시키기 위하여 저압화학기상증착법(low pressure chemical vapor deposition, LPCVD)이나 고진공 LPCVD를 사용하지만 본 연구에서는 CVD에 비하여 무독성이면서 환경친화적이고 초기투자비용이 낮은 증착장비인 sputtering을 이용하였다. 본 연구에서 성장된 SiGe 박막은 400$^{\circ}C$에서 rf plasma가 인가된 Ge과 dc plasma가 인가된 Si의 power를 조절하여 결정화도가 70% (Fig. 1)이고 결정성장방향이 (111)과 (220)방향으로 성장하는 SiGe 박막을 얻을 수 있었다. 본 논문에서는 co-sputtering 성장조건에 따라 성장된 SiGe의 박막 특성을 논의할 것이다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.4
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• pp.493-500
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• 1996

AZO transparent conducting thin films were fabricated by reactive DC magnetron sputtering method using Zn metla target containing 2 wt% of Al, and electrical and optical properties were investigated after heattreatment. Electrical resistivity was reduced 50% and had reached $1{\times}10^{-3}~3.5{\times}10^{-4}\;{\Omega}cm$ by heat treatment. In the case of oxide AZO films, the resistivity of $10^{3}\;{\Omega}cm$ was also decreased to $2{\times}10^{-3}\;{\Omega}cm$ after heat treatment. The optical transmittance of AZO films deposited in the transition range was increased from 59.4 % to 77.4 % by $400^{\circ}C$, 30 min heat treatment.

• Corrosion Science and Technology
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• v.9 no.6
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• pp.289-293
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• 2010

To investigate the corrosion behavior of tools steel surface in various coating film, the surface of hard coated Ti-Zr-N film on the tool steel by using magnetron-sputtering methods was researched using various experimental methods. STD 61 steels were manufactured by using vacuum furnace and solutionized for 1hr at $1050^{\circ}C$. Steel surface was coated with Ti-Zr-N film at $150^{\circ}C$ and 100W for 1h by using DC-sputtering equipment. Surface characteristics of Ti-Zr-N film coated specimens were investigated by OM, XRD, FE-SEM and nano-scratch tester. And corrosion behaviors of the coated specimen were investigated by polarization test and electrochemical impedance spectroscopy(EG&G Co, PARSTAT 2273. USA). It was found that Ti-Zr-N film coated sample had a thick coated layer and showed a good wear resistance and corrosion resistance of surface compared with ZrN and TiN coated sample. The corrosion resistance and mechanical property of Ti-Zr-N film coated STD 61 alloy increased as sputtering time increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.552-557
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• 2006

Electrical, optical, surface, and structural properties of amorphous indium-zinc-oxide (a-IZO) grown by box cathode sputtering (BCS) were compared with crystalline indium-tin-oxide (c-ITO) anode films grown by conventional DC sputtering (DCS). Although x-ray diffraction plot of BCS-grown IZO film shows amorphous structure, the optical and electrical properties of a-IZO is comparable to those of c-ITO film. In particular, BCS-grown IZO films shows very smooth surface without defects such as pin hole and cracks because most of the energy of the sputtered atoms was confined in high density plasma region in box cathode gun. Furthermore polymer organic light emitting diodes (POLED) with the a-IZO anode film shows better electrical properties than that of POLED with the c-ITO anode film due to high work function and smooth surface of a-IZO. This suggested that BCS-grown a-IZO film is promising anode materials substituting conventional c-ITO anode in OLED and flexible displays.