• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.4
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• pp.493-500
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• 1996

AZO transparent conducting thin films were fabricated by reactive DC magnetron sputtering method using Zn metla target containing 2 wt% of Al, and electrical and optical properties were investigated after heattreatment. Electrical resistivity was reduced 50% and had reached $1{\times}10^{-3}~3.5{\times}10^{-4}\;{\Omega}cm$ by heat treatment. In the case of oxide AZO films, the resistivity of $10^{3}\;{\Omega}cm$ was also decreased to $2{\times}10^{-3}\;{\Omega}cm$ after heat treatment. The optical transmittance of AZO films deposited in the transition range was increased from 59.4 % to 77.4 % by $400^{\circ}C$, 30 min heat treatment.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.197-197
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• 2009

Indium tin oxide (ITO), Indium zinc oxide (IZO) 박막은 DC 마그네트론 스퍼터링 시스템을 이용하여 유리기판 위에 증착되었으며, Indium-zinc-tin oxide (IZTO) 박막은 두 개의 캐소드(DC, RF)를 사용한 마그네트론 이원동시방전 시스템에 의해 증착되었다. 모든 박막은 상온 증착 후 $200^{\circ}C$에서 후열처리 되었으며, IZO에 Sn이 소량 첨가됨에 따라 IZO보다 더 낮은 비저항을 갖는 것을 확인할 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.114-117
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• 2020

In this study, we performed the deposition of Al thin film using a DC magnetron sputtering method. To evaluate electrical and structural properties, the growth conditions were changed in terms of two functions, namely, sputtering power ranging from 41.6 to 216 W and film growth rate ranging from 5.35 to 26.39 nm/min. The growth rate and the microstructure were characterized by a scanning electron microscopy and X-ray diffraction analysis. The plane of crystalline growth showed that the preferential (111) direction and defects due to the grain boundary increased with DC power. The resistivity of the Al film over 50 nm showed a constant value by horizontal grain growth. Our results can be applicable for the preparation of nano-templates for anodic aluminum oxide.

• Journal of Hydrogen and New Energy
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• v.10 no.4
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• pp.211-217
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• 1999

In order to investigate the possibilities of microbatteries using TiNi type metal hydride, TiNi films were prepared by DC magnetron sputtering. The films were deposited under various Ar flow rates, DC powers and target-to-substrate distances to find the optimum sputtering conditions. The deposition rate of TiNi thin film increased by increasing the DC power and by decreasing the Ar flow rate and target-to-substrate distance. The chemical composition of the film changed as a target-to-substrate distance. The crystal structure of the film was amorphous state just after deposition and changed to crystalline by vacuum heat treatment.

• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.146-149
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• 2016

The CrN/TiN/Al thin films for solar selective absorber were prepared by dc reactive magnetron sputtering with multi targets. The binary nitride CrN layer deposited with change in N₂ gas flow rates. The gas mixture of Ar and N2 was an important parameter during sputtering deposition because the metal volume fraction (MVF) was controlled by the N2 gas flow rate. In this study, the crystallinity and surface properties of the CrN/TiN/Al thin films were estimated by X-ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The composition and depth profile of thin films were investigated using Auger electron spectroscopy (AES). The absorptance and reflectance with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 300~1,100 nm.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.467-470
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• 2004

Diamond-Like Carbon (DLC) thin film is a semiconductor with high mechanical hardness, low friction coefficient, high chemical inertness, and optical transparency. DLC thin films have widespread applications as protective coatings and solid lubricant coatings in areas such as Hard Disk Drive (HDD) and Micro-Electro-Mechanical-Systems (MEMS). In this work, the wear characteristics of DLC thin films deposited on silicon substrates using a DC-magnetron sputtering system were analyzed. The wear tracks were measured with an Atomic Force Microscope (AFM). To identify the sp2 and sp3 hybridization of carbon bonds and other bonds Raman spectroscopy was used. The structural information of DLC thin films was obtained with Fourier transform infrared spectroscopy and wear tests were conducted by using a micro-pin-on-reciprocator tester. Results showed that the wear characteristics were dependent on the sputtering conditions. The wear rate could be correlated with the bonding state of the DLC thin film.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.854-859
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• 2016

Recently, GeSn is drawing great deal of interests as one of the candidates for group-IV-driven optical interconnect for integration with the Si complementary metal-oxide-semiconductor (CMOS) owing to its pseudo-direct band structure and high electron and hole mobilities. However, the large lattice mismatch between GeSn and Si as well as the Sn segregation have been considered to be issues in preparing GeSn on Si. In this work, we deposit the GeSn films on Si by DC magnetron sputtering at a low temperature of $250^{\circ}C$ and characterize the thin films. To reduce the stresses by GeSn onto Si, Ge buffer deposited under different processing conditions were inserted between Si and GeSn. As the result, polycrystalline GeSn domains with Sn atomic fraction of 6.51% on Si were successfully obtained and it has been demonstrated that the Ge buffer layer deposited at a higher sputtering power can relax the stress induced by the large lattice mismatch between Si substrate and GeSn thin films.

• Journal of Information Display
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• v.2 no.1
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• pp.38-42
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• 2001

Thin films of $In_2O_3-SnO_2$(ITO), $SnO_2$, and $SiO_2$ were prepared on the PET substrate by DC magnetron roll sputtering. 135 nm thick ITO film on $SiO_2$/PET substrate has sheet resistance as low as 55 ${\Omega}/square$ and transmittance as high as 85%. $H_2O$gas permeation through the film was 0.35 g/$m^2$ in a day. These properties are enough on optical film for the plastic LCD substrate or touch panel. Both refractive index and sheet resistance of ITO was found to be very sensitive to $O_2$ flow rate. Oxygen flow conditions have been optimized from 4 to 5 SCCM at $10^{-3}$torr. It is also shown that both thickness of $SnO_2$ and refractive index of $SiO_2$ decrease as $O_2$ flow rate increases.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.193-193
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• 2010

HIPIMS(High sputtering impulse magnetron sputtering)은 수십 ${\mu}s$의 짧은 pulse 동안 수kw의 매우 높은 파워를 인가할 수 있어 밀도 $10^{13}/cm^3$ 이상의 고밀도 플라즈마 방전이 가능하여 스퍼터된 타겟 이온들의 이온화율이 매우 높은 특징을 가진다. HIPIMS를 통해 증착한 박막의 경우 매우 치밀한 조직을 가지고 있어 기존 DC, Pulsed DC, RF 증착을 통한 박막에 비해 우수한 물성을 보여준다. 본 실험에서는 대면적의 고품위 Al:ZnO 박막을 증착하기위하여 HIPIMS 증착법을 사용하였다. 1000mm폭 타겟상에서 균일한 증착을 위하여 Balanced B-field, Unbalanced field를 각각 인가하여 실험하였다. 시뮬레이션을 통하여 타겟 중심부와 가장자리의 자기장을 결정하였으며, target edge에서의 증착율과 cathode erosion 방지를 위하여 원형 트랙형으로 보조 자석을 설치하였다. $Al_2O_3$(2wt%)가 첨가된 planar target을 사용하였고, power는 700 W~2 kW, 그리고 pulse 폭은 $50-150 {\mu}s$정도로 변화시켜 가면서 상온에서 증착하였다. 플라즈마 가스로는 Ar만을 사용하여 두께는 60-100 nm정도로 증착하였다. Plasma emission monitoring을 통해 측정한 결과 Balanced B-field 에 비해 Unbalanced B-field 조건 에서 스퍼터된 이온들의 균일도가 우수하였으며 증착된 박막의 균일도 또한 증가하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.320-320
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• 2016

Nanocrystalline Carbon thin films have numerous applications in different areas such as mechanical, biotechnology and optoelectronic devices due to attractive properties like high excellent hardness, low friction coefficient, good chemical inertness, low surface roughness, non-toxic and biocompatibility. In this work, we studied the comparison of pure DC power and pulsed DC power in plasma sputtering process of carbon thin films synthesis. Using a close field unbalanced magnetron sputtering system, films were deposited on glass and Si wafer substrates by varying the power density and pulsed DC frequency variations. The plasma characteristics has been studied using the I-V discharge characteristics and optical emission spectroscopy. The films properties were studied using Raman spectroscopy, Hall effect measurement, contact angle measurement. Through the Raman results, ID/IG ratio was found to be increased by increasing either of DC power density and pulsed DC frequency. Film deposition rate, measured by Alpha step measurement, increased with increasing DC power density and decreased with pulsed DC frequency. The electrical resistivity results show that the resistivity increased with increasing DC power density and pulsed DC frequency. The film surface energy was estimated using the calculated values of contact angle of DI water and di-iodo-methane. Our results exhibit a tailoring of surface energies from 52.69 to $55.42mJ/m^2$ by controlling the plasma parameters.