• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.6
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• pp.1061-1068
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• 2017

A RVDT is a sensor that measures angular displacement and the output signal of RVDT is a DSBSC-AM signal. For this reason, a DSBSC-AM demodulation processor is required to determine the angular displacement from the output signal. In this paper, DADC(Digital Angle to DC) which extracts the angular displacement from the output signal of a RVDT is implemented based-on modified Costas Loop usually used in the demodulation of DSBSC-AM signal by using FPGA. DADC can used with both 4-wire and 5-wire RVDTs and can exactly compensate the phase difference between the input excitation and output signals of a RVDT unlike the conventional analog RVDT signal conditioners which require external components. Since digital signal processing technique that can enhance the linearity is exploited, DADC shows 0.035% linearity error, which is smaller than 0.005% that of a conventional analog signal conditioner. The DADC are tested in an integrated experimental environment which includes a commercial RVDT sensor, ADC and an analog output block.

• Journal of the Korean Society of Propulsion Engineers
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• v.20 no.3
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• pp.54-62
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• 2016

Micro plasma thruster (${\mu}PT$) was studied experimentally with a dual-stage micro-hollow cathode discharge (MHCD) plasma. Electrostatic-like acceleration exhibiting more directional and elongated exhaust plume was achieved by a dual layer MHCD at the total input power less than 10 W with argon flow rate of 40 sccm. V-I characteristic indicated that there was an optimal regime for dual-stage operation where the acceleration voltage across the second stage remained constant. Estimated exhaust plume length showed a similar trend to the analytic estimate of exhaust velocity which scales with an acceleration voltage. ${\mu}PT$ with multiple holes exhibited similar performance with single-hole thruster indicating that higher power loading is possible owing to decreased power through each hole. Boltzmann plot of atomic argon spectral lines showed average electron excitation temperature of about 2.6 eV (~30,170 K) in the exhaust plume.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.88-88
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• 2003

Optical Emission Spectroscopy(OES) is a very important technology for real-time monitoring of plasma in a reactor during dry etching process. OES technology is non-invasive to the plasma process. It can be used to collect information on excitation and recombination between electrons and ions in the plasma. It also helps easily diagnose plasma intensity and monitor end-point during plasma etch processing. We studied high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar plasma with an OES as a function of processing pressure, RIE chuck power, ICP source power and gas composition. The scan range of wavelength used was from 400 nm to 1000 nm. It was found that OES peak Intensity was a strong function of ICP source power and processing pressure, while it was almost independent on RIE chuck power in BCl$_3$-based planar ICP processes. It was also worthwhile to note that increase of processing pressure reduced negatively self-induced dc bias. The case was reverse for RIE chuck power. ICP power and gas composition hardly had influence on do bias. We will report OES results of high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar Plasma in detail in this presentation.

• Journal of Power Electronics
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• v.18 no.1
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• pp.70-80
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• 2018

A novel strategy based on a zero common mode voltage pulse-width modulation (ZCMV-PWM) technique and zero-sequence circulating current (ZSCC) feedback control is proposed in this study to eliminate ZSCCs between three-level neutral point clamped (NPC) voltage source inverters, with common AC and DC buses, that are operating in parallel. First, an equivalent model of ZSCC in a three-phase three-level NPC inverter paralleled system is developed. Second, on the basis of the analysis of the excitation source of ZSCCs, i.e., the difference in common mode voltages (CMVs) between paralleled inverters, the ZCMV-PWM method is presented to reduce CMVs, and a simple electric circuit is adopted to control ZSCCs and neutral point potential. Finally, simulation and experiment are conducted to illustrate effectiveness of the proposed strategy. Results show that ZSCCs between paralleled inverters can be eliminated effectively under steady and dynamic states. Moreover, the proposed strategy exhibits the advantage of not requiring carrier synchronization. It can be utilized in inverters with different types of filter.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.7-8
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• 2010

The surface conductive layer (SCL) of chemical vapor deposition (CVD) diamonds has attracting much interest. However, neither photoemission electron microscopic (PEEM) nor micro-spectroscopic (PEEMS) information is available so far. Since SCL retains in an ultra-high vacuum (UHV) condition, PEEM or PEEMS study will give an insight of SCL, which is the subject of the present study. The sample was made on a Ib-type HTHP diamond (001) substrate by non-doping CVD growthin a DC-plasma deposition chamber. The SCL properties of the sample in air were; a few tens K/Sq. in sheet resistance, ${\sim}180\;cm^2/vs$ in Hall mobility, ${\sim}2{\times}10^{12}/cm^2$ in carrier concentration. The root-square-mean surface roughness (Rq) of the sample was ~0.2nm as checked by AFM. A $2{\times}1$ LEED pattern and a sheet resistance of several hundreds K/Sq. in UHV were checked in a UHV chamber with an in-situ resist-meter [1]. The sample was then installed in a commercial PEEM/S apparatus (Omicron FOCUS IS-PEEM) which was composed of electro-static-lens optics together with an electron energy-analyzer. The presence of SCL was regularly monitored by measuring resistance between two electrodes (colloidal graphite) pasted on the two ends of sample surface. Figure 1 shows two PEEM images of a same area of the sample; a) is excited with a Hg-lamp and b) with a Xe-lamp. The maximum photon energy of the Hg-lamp is ~4.9 eV which is smaller that the band gap energy ($E_G=5.5\;eV$) of diamond and the maximum photon energy of the Xe-lamp is ~6.2 eV which is larger than $E_G$. The image that appear with the Hg-lamp can be due to photo-excitation to unoccupied states of the hydrogen-terminated negative electron affinity (NEA) diamond surface [2]. Secondary electron energy distribution of the white background of Figs.1a) and b) indeed shows that the whole surface is NEA except a large black dot on the upper center. However, Figs.1a) and 1b) show several features that are qualitatively different from each other. Some of the differences are the followings: the two main dark lines A and B in Fig.1b) are not at all obvious and the white lines B and C in Fig.1b) appear to be dark lines in Fig.1a). A PEEMS analysis of secondary electron energy distribution showed that all of the features A-D have negative electron affinity with marginal differences among them. These differences can be attributed to differences in the details of energy band bending underneath the surface present in SCL [3].