• The Journal of the Petrological Society of Korea
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• v.21 no.4
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• pp.385-396
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• 2012

Jeju island is the biggest volcanic island in Korea and there are over 455 Quaternary monogenetic volcanoes, of which approximately 373 volcanoes(82.0%) are cinder cones. Other volcanic forms in the island include sharp-pointed lava cone without crater(9 volcanoes; 2.0%), shield volcanoes(27 volcanoes; 5.9%), tuff rings(17 volcanoes; 3.7%), tuff cones(3 volcanoes; 0.7%), a maar(1 volcano; 0.2%) and lava domes(25 volcanoes; 5.5%). The monogenetic volcanoes include 15 small nested cinder cones(aloreum). The monogenetic volcanoes are more abundant in the eastern part of the island than in the western part. If the main cause of the weathering such as precipitation affected the shape of the monogenetic volcanoes, more monogenetic volcanoes(BC, CC, DC, etc.) are supposed to be present in the southern part that have more precipitation than in the northern part. But the distribution of the monogenetic volcanoes shows no difference between the southern and the northern parts. So we suggest that the difference of the climatic conditions did not affect the distribution or the shape of cinder cones. Tuff rings, tuff cones and a maar are distributed beneath the island or in the low-altitude areas along the shore although cinder cones are distributed in the interior of the island. This means that the volcanic activity which formed the monogenetic volcanoes resulted from either phreatomagmatic eruption or magmatic (hawaiian or strombolian) eruptions depending on the reaction with water (underground water or shallow waters). The distribution of the monogenetic volcanoes according to the altitude shows that 253(55.6%) volcanoes occur in low-lying coastal areas at an altitude below 300 m, 110(24.2%) in a middle mountainous area at an altitude between 300~600 m and 92(20.2%) in a high mountainous area at an altitude above 600 m. So more than half of monogenetic volcanoes are distributed in low-lying coastal areas.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.3
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• pp.392-401
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• 2012

This paper gives a electromagnetic coupling mechanism of the high altitude electromagnetic pulse (HEMP) into large- scale underground multilayer structures using analytic and numerical methods. The modeling methods are firstly addressed to the HEMP source which can be generated by intentional nuclear explosion. The instantaneous and intense electromagnetic pulse of the HEMP source is concerned from DC to 100 MHz band, because the power spectrum of the HEMP is rapidly decreased under -30 dB over the 100 MHz band. Through this range, a penetrated electric field distribution is computed within the large-scale underground multilayer structures. As a result, the penetrated electric field intensities at 0.1 and 1 MHz are about 10 and 5 kV/m, respectively. Therefore, additional shielding techniques are introduced to protect buried structures within the large-scale underground structures such as high-lossy material and filtering structures (wire screen).

• International Commerce and Information Review
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• v.18 no.4
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• pp.55-78
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• 2016

In this study, service quality attributes of uTradeHub were classified based on the Kano model, and quality attributes that should be managed in priority to improve the service quality of uTradeHub were investigated using Timko's customer satisfaction coefficient(CSC) and average satisfaction coefficient(ASC). The results of the study are summarized as follows. First, as a result of classifying service quality attributes based on Kano model, 12 one dimensional qualities, 5 must-be qualities, 2 indifferent qualities were deducted, and many quality attributes of uTradeHub service were confirmed to be one dimensional quality to which is needed to be paid attention and paid more detailed attention to enhance service quality. Second, in the analysis result using Timko's customer satisfaction coefficient, "post processing for problems and complaints", "cost reduction", "efficiency of business processing" were ranked in the top of satisfaction coefficient, and they found to be quality attributes that customer satisfaction increases when service quality was satisfied. While, "post processing for problems and complaints", "interaction", "ability to respond promptly when problems occur" were ranked in the top of unsatisfaction coefficient, and they were analysed to be quality attributes that customer complaints increase when service quality was unsatisfied. Third, in the result of analyzing the quality attributes that should be managed in priority to improve the service quality of uTradeHub based on the average satisfaction coefficient(ASC), "post processing for problems and complaints", "cost reduction", "useful information" were ranked in the top 3, and they were classified as quality attributes that the satisfaction level increases more when they are improved than now, but the satisfaction level decreases when they are worsen.

• Journal of the Korean Electrochemical Society
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• v.11 no.2
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• pp.89-94
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• 2008

We synthesized and investigated $(La_{0.75}Sr_{0.25})_{1-x}FeO_{3-\delta}$ perovskite oxides having different stoichiomety (x = 0, 0.02, 0.04, 0.06, 0.08) as cathode materials. SEM images and XRD patterns reveal that the synthesized powder has uniform size distribution and high degree of crystallinity. The electrochemical performances of the synthesized powders were investigated by AC impedance spectroscopy. Both the electric conductivity and the electrochemical performance showed the highest properties at the stoichiometry x = 0.02. Finally, we concluded that the variation of A-site deficiency results in the variation of the amount of oxygen vacancy and micro structure, which leads to the variation of electric conductivity and polarization resistance.

• Geophysics and Geophysical Exploration
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• v.11 no.1
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• pp.68-77
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• 2008

We have developed an inversion algorithm for loop-loop electromagnetic (EM) data, based on the localised non-linear or extended Born approximation to the solution of the 2.5D integral equation describing an EM scattering problem. Source and receiver configuration may be horizontal co-planar (HCP) or vertical co-planar (VCP). Both multi-frequency and multi-separation data can be incorporated. Our inversion code runs on a PC platform without heavy computational load. For the sake of stable and high-resolution performance of the inversion, we implemented an algorithm determining an optimum spatially varying Lagrangian multiplier as a function of sensitivity distribution, through parameter resolution matrix and Backus-Gilbert spread function analysis. Considering that the different source-receiver orientation characteristics cause inconsistent sensitivities to the resistivity structure in simultaneous inversion of HCP and VCP data, which affects the stability and resolution of the inversion result, we adapted a weighting scheme based on the variances of misfits between the measured and calculated datasets. The accuracy of the modelling code that we have developed has been proven over the frequency, conductivity, and geometric ranges typically used in a loop-loop EM system through comparison with 2.5D finite-element modelling results. We first applied the inversion to synthetic data, from a model with resistive as well as conductive inhomogeneities embedded in a homogeneous half-space, to validate its performance. Applying the inversion to field data and comparing the result with that of dc resistivity data, we conclude that the newly developed algorithm provides a reasonable image of the subsurface.

• Korean Journal of Materials Research
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• v.23 no.4
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• pp.240-245
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• 2013

Electrochemical surface treatment is commonly used to form a thin, rough, and porous oxidation layer on the surface of titanium. The purpose of this study was to investigate the formation of nanotubular titanium oxide arrays during short anodization processing. The specimen used in this study was 99.9% pure cp-Ti (ASTM Grade II) in the form of a disc with diameter of 15 mm and a thickness of 1 mm. A DC power supplier was used with the anodizing apparatus, and the titanium specimen and the platinum plate ($3mm{\times}4mm{\times}0.1mm$) were connected to an anode and cathode, respectively. The progressive formation of $TiO_2$ nanotubes was observed with FE-SEM (Field Emission Scanning Electron Microscopy). Highly ordered $TiO_2$ nanotubes were formed at a potential of 20 V in a solution of 1M $H_3PO_4$ + 1.5 wt.% HF for 10 minutes, corresponding with steady state processing. The diameters and the closed ends of $TiO_2$ nanotubes measured at a value of 50 cumulative percent were 100 nm and 120 nm, respectively. The $TiO_2$ nanotubes had lengths of 500 nm. As the anodization processing reached 10 minutes, the frequency distribution for the diameters and the closed ends of the $TiO_2$ nanotubes was gradually reduced. Short anodization processing for $TiO_2$ nanotubes of within 10 minutes was established.

• Fire Science and Engineering
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• v.30 no.4
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• pp.121-127
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• 2016

This study analyzed the structural and electrical characteristics of an iron fittings type Corrugated Stainless Steel Tubing (CSST) damaged by the Primary Current Injection Test System (PCITS). CSST consists of cladding, tube, nuts, clamp ring, flare cap, socket, and ball valve. For an evaluation of the dielectric withstand voltage, the area between the live part and non-live part of the CCST shall withstand a voltage of 220 V AC for one minute. For an evaluation of the insulation performance by 500 V DC, it is required that the insulation exceed more than $1M{\Omega}$ before the temperature rise test, $0.3M{\Omega}$ after the test. Although the average resistance of the product was $11.5m{\Omega}$, that of the product damaged at a current of 130 A by the PCITS was $11.50m{\Omega}$. Furthermore, parts of the cladding were melted and black smoke appeared when a current of 130 A applied for 10 s. After 60 s, most parts were heated and turned red. At 120 s, the parts that turned red had widened. Although it did not form a normal distribution because the P value was 0.019 with a confidential interval of 95%, it revealed outstanding characteristics with an AD (Anderson-Darling) value of 0.896 and a standard deviation of 0.5573.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.573-579
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• 2011

Highly textured Ag, Al and Al:Si back reflectors for flexible n-i-p silicon thin-film solar cells were prepared on 100-${\mu}m$-thick stainless steel substrates by DC magnetron sputtering and the influence of their surface textures on the light-scattering properties were investigated. The surface texture of the metal back reflectors was influenced by the increased grain size and by the bimodal distribution that arose due to the abnormal grain growth at elevated deposition temperatures. This can be explained by the structure zone model (SZM). With an increase in the deposition temperatures from room temperature to $500^{\circ}C$, the surface roughness of the Al:Si films increased from 11 nm to 95 nm, whereas that of the pure Ag films increased from 6 nm to 47 nm at the same deposition temperature. Although Al:Si back reflectors with larger surface feature dimensions than pure Ag can be fabricated at lower deposition temperatures due to the lower melting point and the Si impurity drag effect, they show poor total and diffuse reflectance, resulting from the low reflectivity and reflection loss on the textured surface. For a further improvement of the light-trapping efficiency in solar cells, a new type of back reflector consisting of Ag/Al:Si bilayer is suggested. The surface morphology and reflectance of this reflector are closely dependent on the Al:Si bottom layer and the Ag top layer. The relationship between the surface topography and the light-scattering properties of the bilayer back reflectors is also reported in this paper.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Korean Journal of Plant Resources
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• v.32 no.5
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• pp.589-614
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• 2019

To investigate the distribution of vascular plants growing at Mt. Guryong, we surveyed from March in 2016 to October in 2017. The flora of Mt. Guryong was classified as a total of 526 taxa comprising of 87 families, 298 genus, 449 species, 4 subspecies, 63 varieties, 10 forma. Among them, the endemic plants in Korea were investigated as 10 taxa of including Pseudostellaria coreana (Nakai) Ohwi. The Korean rare plants species were investigated as 16 taxa, among them degree of CR investigated as 1 taxa of Cypripedium macranthum Sw., VU investigated as 5 taxa of including Rhododendron micranthum Turcz., degree of LC investigated 9 taxa of including Clematis koreana Kom., degree of DD investigated 1 taxa of Adenophora grandiflora Nakai. Endemic plants were investigated as 14 taxa of including seudostellaria coreana (Nakai) Ohwi and The floristic special plants were a total of 84 taxa such as 2 taxa in degree V(in cluding Polypodium virginianum L.), 7 taxa in degree IV (including Anemone reflexa Steph. & Willd.), 21 taxa in degree III(including Celtis aurantiaca Nakai), 22 taxa in degree II (including Thelypteris phegopteris (L.) Sloss.) and 31 taxa in degree I (including Cimicifuga simplex (DC.) Turcz.) was carried out to provide basic data. The naturalized plants were investigated as 37 taxa of including Chenopodium ficifolium Smith., Thlaspi arvense L., Rumex crispus L. and the percentage of urbanization index was 11.53%, the naturalized ratio was 6.99% respectively.