• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.473.1-473.1
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• 2014

We report on the characteristics of Zr-doped $In_2O_3$ (IZrO) films prepared by DC-RF magnetron cosputtering of $In_2O_3$ and $ZrO_2$ targets for use as a transparent electrode for high efficient organic solar cells (OSCs). The effect of $ZrO_2$ doping power on electrical, optical, structural, and surface morphology of the IZrO film was investigated in detail. At optimized $ZrO_2$ RF power of 50 W, the IZrO film exhibited a low sheet resistance of 20.71 Ohm/square, and a high optical transmittance of 83.9 %. Furthermore, the OSC with the IZrO anode showed a good cell-performance: fill factor of 61.71 %, short circuit current (Jsc) of $8.484mA/cm^2$, open circuit voltage (Voc) of 0.593 V, and power conversion efficiency (PCE) of 3.106 %. In particular, the overall OSC characteristics of the cell with the IZrO anode were comparable to those of the OSC with the conventional Sn-doped $In_2O_3$ (FF of 65.03 %, Jsc of $8.833mA/cm^2$, Voc of 0.608 V, PCE of 3.495 %), demonstrating that the IZrO anode is a promising alternative to ITO anode in OSCs.

• Journal of IKEEE
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• v.26 no.4
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• pp.584-589
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• 2022

For DC-AC power conversion from a high-voltage photovoltaic panel to a single-phase grid, the two-stage transformerless inverter with a buck-boost converter followed by a full-bridge inverter is widely used. To avoid an excessive leakage current due to the large parasitic capacitance of the photovoltaic panel, the full-bridge inverter can only adopt the bipolar PWM which results in much higher power loss compared to the unipolar PWM. In order to overcome such a poor efficiency, this paper proposes a new topology in which an IGBT and a diode for circuit isolation are added to the buck-boost converter. The proposed circuit isolation method allows the unipolar PWM in the full-bridge inverter without any increase in the leakage current so that the overall efficiency can be improved. The validity of the proposed solution is verified by computer simulation and power loss calculation.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.28 no.2
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• pp.143-149
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• 2022

PCS needs to freely switch AC and DC to connect the battery, external AC loads and renewable energy in both directions for energy efficiency. Whenever converting happens, power loss inevitably occurs. Minimization of the power loss to save electricity and convert it for usage is a very critical function in PCS. PCS plays an important role in the ESS(Energy Storage System) but the importance of stabilizing semiconductors on PCB(Printed Circuit Board) should be empathized with a risk of failure such as a fire explosion. In this study, the temperature variation inside PCS was reviewed by cooling fan on top of PCS, and the vibration characteristics of PCS were analyzed during truck transportation for reliability of the product. In most cases, a cooling fan is mounted to control the inner temperature at the upper part of the PCS and components generating the heat placed on the internal aluminum cooling plate to apply the primary cooling and the secondary cooling system with inlet fans for the external air. Results of CFD showed slightly lack of circulating capacity but simulated temperatures were durable for components. The resonance points of PCS were various due to the complexity of components. Although they were less than 40 Hz which mostly occurs breakage, it was analyzed that the vibration displacement in the resonance frequency band was very insufficient. As a result of random-vibration simulation, the lower part was analyzed as the stress-concentrated point but no breakage was shown. The steel sheet could be stable for now, but for long-term domestic transportation, structural coupling may occur due to accumulation of fatigue strength. After the test completed, output voltage of the product had lost so that extra packaging such as bubble wrap should be considered.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.415.2-415.2
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• 2016

Triboelectric nanogenerator (TENG) is one of ways to convert mechanical energy sound, waves, wind, vibrations, and human motions to available electrical energy. The principal mechanism to generate electrical energy is based on contact electrification on material surface and electrostatic induction between electrodes. The performance of TENG are dependent on amount of the input mechanical energy and characteristics of triboelectric materials. Furthermore, the whole TENG system including mechanical structure and electrical system can effect on output performance of TENG. In this work, we investigated the effect of gear train on output performance and power conversion efficiency (PCE) of TENG under a given input energy. We applied the gear train on mechanical structure to improve the contact rate. We measured the output energy under a constant input energy by controlling the size of the working gear. We prepared gears with gear ratios (rin/rw) of 1, 1.7, and 5. Under the constant input energy, the voltage and current from our gear-based TENG system were enhanced up to the maximum of 3.6 times and 4.4 times, respectively. Also, the PCE was increased up to 7 times at input frequency of 1.5 Hz. In order to understand the effect of kinematic design on TENG system, we performed a capacitor experiment with rectification circuit that provide DC voltage and current. Under the input frequency of 4.5 Hz, we obtained a 3 times enhanced rectifying voltage at a gear ratio of 5. The measured capacitor voltage was enhanced up to about 8 fold in using our TENG system. It is attributed that our gear-based TENG system could improve simultaneously the magnitude as well as the generation time of output power, finally enhancing output energy. Therefore, our gear-based TENG system provided an effective way to enhance the PCE of TENGs operating at a given input energy.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.343-343
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• 2014

We reported on the electrical, optical, structural and morphological properties fabricated by co-sputtering for use as an anode for organic solar cells (OSCs). By adjusting RF and DC power of $MoO_3$ and IZO targets during co-sputtering, we fabricated the $MoO_3$-IZO electrode with graded content of the $MoO_3$ on the IZO films. At optimized $MoO_3$ thickness of 20 nm, the $MoO_3$ graded IZO electrode showed a higher mobility ($33cm^2/V-Sec$) than directly deposited $MoO_3$ on IZO film ($26cm^2/V-Sec$). At visible range (400nm~800nm), optical transmittance of the $MoO_3$ graded IZO electrode is higher than that of directly deposited $MoO_3$ on IZO film. High mobility of $MoO_3$ graded on IZO is attributed to less interface scattering between $MoO_3$ and IZO. To investigate the feasibility of $MoO_3$ graded IZO films, we fabricated conventional P3HT:PCBM based OSCs with $MoO_3$ graded IZO as a function of MoO3 thickness. The OSC fabricated on the $MoO_3$ graded IZO anode showed a fill factor of 66.53%, a short circuit current of $8.121mA/cm^2$, an open circuit voltage of 0.592 V, and a power conversion efficiency of 3.2% comparable to OSC fabricated on ITO anode and higher than directly deposited $MoO_3$ on IZO film. We suggested possible mechanism to explain the high performance of OSCs with a $MoO_3$ graded IZO.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.5 s.335
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• pp.61-68
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• 2005

In this paper, low conversion loss 94 GHz MIMIC resistive mixer was designed and fabricated. The $0.1{\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT, which is applicable to MIMIC's, was fabricated. The DC characteristics of MHEMT are 665 mA/mm of drain current density, 691 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 189 GHz and the maximum oscillation frequency(fmax) is 334 GHz. A 94 GHz resistive mixer was fabricated using $0.1{\mu}m$ MHEMT MIMIC process. From the measurement, the conversion loss of the 94 GHz resistive mixer was 8.2 dB at an LO power of 10 dBm. P1 dB(1 dB compression point) of input and output were 9 dBm and 0 dBm, respectively. LO-RF isolations of resistive mixer was obtained 15.6 dB at 94.03 GHz. We obtained in this study a lower conversion loss compared to some other resistive mixers in W-band frequencies.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.8-15
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• 2006

In this paper, the 94 GHz, low conversion loss, and high isolation single balanced mixer is designed and fabricated using GaAs-based metamorphic high electron mobility transistors (MHEMTs) with 70 nm gate length and the hybrid ring coupler with the micromachined transmission lines, dielectric-supported air-gapped microstrip lines (DAMLs). The 70 nm MHEMT devices exhibit DC characteristics with a drain current density of 607 mA/mm an extrinsic transconductance of 1015 mS/mm. The current gain cutoff frequency ($f_T$) and maximum oscillation frequency ($f_{max}$) are 320 GHz and 430 GHz, respectively. The fabricated hybrid ring coupler shows wideband characteristics of the coupling loss of $3.57{\pm}0.22dB$ and the transmission loss of $3.80{\pm}0.08dB$ in the measured frequency range of 85 GHz to 105 GHz. This mixer shows that the conversion loss and isolation characteristics are $2.5dB{\sim}>2.8dB$ and under -30 dB, respectively, in the range of $93.65GHz{\sim}94.25GHz$. At the center frequency of 94 GHz, this mixer shows the minimum conversion loss of 2.5 dB at a LO power of 6 dBm To our knowledge, these results are the best performances demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.4
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• pp.381-388
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• 2015

In this paper, a wireless video streaming system is designed and implemented for TV white space applications. It consists of a RF transceiver module, a digital modem, a camera, and a LCD screen. A VGA resolution video is captured by a camera, modulated by modem, and transmitted by RF transceiver module, and finally displayed at a destination 2.6-inch LCD screen. The RF transceiver is based on direct-conversion architecture. Image leakage is improved by low pass filtering LO, which successfully covers the TVWS. Also, DC offset problem is solved by current steering techniques which control common mode level at DAC output node. The output power of the transmitter and the minimum sensitivity of the receiver is +10 dBm and -82 dBm, respectively. The channel bandwidth is tunable among 6, 7 and 8 MHz according to regulations and standards. Digital modem is realized in Kintex-7 FPGA. Data rate is 9 Mbps based on QPSK and 512ch OFDM. A VGA video is successfully streamed through the air by using the developed TV white-space RF communication module.

• Journal of IKEEE
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• v.17 no.3
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• pp.275-283
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• 2013

In this paper, a 8bit 10Ms/s CMOS Folding and Interpolation analog-to-digital convertor is proposed. The architecture of the proposed ADC is based on a Folding & Interpolation using FR(Folding Rate)=8, NFB(Number of Folding Block)=4, IR(Interpolation Rate)=8. The proposed ADC adopts a preamplifier sharing method to decrease the number of preamplifier by half comparing to the conventional ones. This chip has been fabricated with a 0.35[um] CMOS technology. The effective chip area is $1.8[mm]{\times}2.11[mm]$ and it consumes 20[mA] at 3.3 power supply with 10[MHz] clock. The INL is -0.57, +0.61 [LSB] and DNL is -0.4, +0.51 [LSB]. The SFDR is 48.9[dB] and SNDR is 47.9[dB](ENOB 7.6b) when the input frequency is 100[kHz] at 10[MHz] conversion rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.188.1-188.1
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• 2014

Aluminum is widely used as a material for electrode on silicon based devices. Especially, aluminum films are used as backside and front-side electrodes in silicon quantum dot (QD) solar cells. In this point, the diffusion of aluminum is very important for the enhancement of power conversion efficiency by improvement of contact property. Aluminum was deposited on a Si (100) wafer and a Si QD layer by ion beam sputter system with a DC ion gun. The Si QD layer was fabricated by $1100^{\circ}C$ annealing of the $SiO_2/SiO_1$ multilayer film grown by ion beam sputtering deposition. Cs ion beam with a low energy and a grazing incidence angle was used in SIMS depth profiling analysis to obtain high depth resolution. Diffusion behavior of aluminum in the Al/Si and Al/Si QD interfaces was investigated by secondary ion mass spectrometry (SIMS) as a function of heat treatment temperature. It was found that aluminum is diffused into Si substrate at $450^{\circ}C$. In this presentation, the effect of heat treatment temperature and Si nitride diffusion barrier on the diffusion of Al will be discussed.