• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.18 no.6
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• pp.233-240
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• 2019

In this paper, due to the development of 5G communication technology, an antenna capable of covering both LTE and 5G bands is currently needed. In addition, we designed and manufactured a single feed antenna for the integrated public network (LTE) and 5G frequency dual band cover to satisfy the frequency bandwidth of more than 10% in each band. The antenna designed by adopting the dipole of the basic dipole antenna in a planar structure is a form in which the radiating element is vertically extended at all of the 700 MHz antennas and folded into a 'ㄷ' shape. In addition, the radiating element of the 700MHz band serves as a reflector of the 3.5GHz band radiating element. As a result, the 700 MHz band -10 dB bandwidth 104 MHz(14.8%) and 3.5 GHz band -10 dB bandwidth 660 MHz(18.8%) were obtained and the radiation pattern characteristic resulted in gains of 8.46 dBi, beam width E-plane 55°, H-plane 81° and 3.5 GHz bands 6.14 dBi, beamwidth E-plane 79°, H-Plane 49°.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.698-701
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• 2008

본 논문에서는 상용소자의 특성과 상향변환기의 모듈에 소요되는 링크전력을 비교 분석하여 Ka-band VSAT UPCONVERTER를 설계하였다. $30GHz{\sim}31GHz$대역에서 2W 출력신호를 나타내기 위하여 상향변환시스템은 IF증폭단, 감쇄기, 믹서단, 대역통과필터 및 2W 전력증폭단으로 구성시켰으며 상용MMIC를 이용하여 설계된 상향변환모듈은 $6.29dBm{\sim}7.88dBm$의 출력전력, 이득은 $23.19{\sim}28.15dB$을 Cain flatness는 4.95dB를 나타내었다. 최종단의 전력증폭기는 $33.75{\sim}34.96dBm$의 출력전력을 나타내었으며 이득은 $38.5{\sim}41.98dB$로 측정되었다.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.9 no.4
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• pp.153-157
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• 2010

In this paper, a dual band LNA (Low Noise Amplifier) with a LC-tank matching circuit is designed for 912MHz and 2.45GHz RFID reader. The operating frequency is decided by the LC-tank resonance. The simulated results demonstrate that S21 parameter is 11.683dB and 5.748dB at 912MHz and 2.45GHz, respectively, and the S11 are -10.796dB and -21.261dB, the S22 are -7.131dB and -14.877dB at the same frequencies. The measured NF (Noise Figure) is 0.471 and 1.726 at 912MHz and 2.45GHz, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.4
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• pp.437-444
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• 2015

A high output power voltage controlled oscillator (VCO) in the U-band was implemented using a 65 nm CMOS process. The proposed VCO used a transmission line to increase output voltage swing and overcome the limitations of CMOS technologies. Two varactor banks were used for fine tuning with a 5% frequency tuning range. The proposed VCO showed small variation in output voltage and operated at 51.55-54.18 GHz. The measured phase noises were -51.53 dBc/Hz, -91.84 dBc/Hz, and -101.07 dBc/Hz at offset frequencies of 10 kHz, 1 MHz, and 10 MHz, respectively, with stable output power. The chip area, including the output buffer, is $0.16{\times}0.16mm^2$ and the maximum output power was -0.11 dBm. The power consumption was 33.4 mW with a supply voltage of 1.2-V. The measured $FOM_P$ was -190.8 dBc/Hz.

• Journal of IKEEE
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• v.15 no.4
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• pp.339-344
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• 2011

In this paper, we proposed an internal multi-band monopole antenna for mobile phone that can be used for smart phones. The proposed antenna has a small volume of $38{\times}8.5{\times}5\;mm^3$, ground size is $100{\times}60\;mm^2$, and covers the GSM900 (Global System for Mobile communications : 880-960 MHz), DCS (Digital Communications System : 1710-1880 MHz), K-PCS (Korea-Personal Communications Service : 1750-1870 MHz), US-PCS (US Personal Communications Service : 1850-1990 MHz), Bluetooth (2400-2483 MHz), Wibro (2300-2390 MHz) and WLAN (Wireless Local Area Network : 2400-2483.5 MHz) bands. The measured peak gains of the implemented antenna are 1.15 dBi at 920 MHz, 3.58 dBi at 1795 MHz, 3.46 dBi at 1810 MHz, 2.91 dBi at 1920 MHz, 5.18 dBi at 2345 MHz, 3.37 dBi at 2442 MHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.5
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• pp.1120-1128
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• 2004

In this paper, we has designed and implemented Up-converter for K-band with high IMD3 performance using balanced power amplifier. It is consisted of PA module and, Local Oscillator module with reject Filter, mixer module and If block, and Up-converter has a local loop path to decide whether it operate or not and has the sensing port to inspect output power level. According to the power budget of designed Up-converter, K-band balanced power amplifier was fabricated by commercial MMIC. Measurement results of up-converter show about 40dB Gain, PldB of 29dBm and OIP3 was 38.25dBm, that is good performance compared to power budgets. We has adjusted gate voltage of MMIC to control more than 30 dB gain. This up-converter was used in transceiver for PTP and PTMP, and applied to digital communication system that use QAM and QPSK modulation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.8
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• pp.943-953
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• 2007

In this paper, we propose a Cassegrain antenna with a scalar feed horn opt rating in Ka-band. For an effective EM simulation of the Cassegrain antenna, the near-field of the feed hone is used ai the equivalent source of the Cassegrain antenna using the surface equivalent theorem. A corrugated circular horn operating with $HE_{11}$ mode is used as the feed horn. The angle and feed center of the main and sub reflectors are optimized to achieve maximum antenna efficiency. The designed feed horn shows the gain of 19dBi, the side-lobe level of less than -25dB and the half power beam width of $20^{\circ}$ at 33 GHz. The Cassegrain antenna shows the gain of 41dBi, the efficiency of 60%, the side-lobe level of less than -20dB and the half power beam width of $1.2^{\circ}$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.3
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• pp.339-345
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• 2001

In this paper, FG-CPW (Finite-Ground Coplanar Wave-Guide) balanced diode mixer is presented. Frequency bandwidth is selected for a C-band, which is 5.72~5.82 GHz for RF, 5.58~5.68 GHz for LO, and 140 MHz for IF signals. A rat-race hybrid is designed for the accomplishment of single balanced type. A low pass filter (LPF) with CPW structure is used far good conversion loss and unwanted harmonics suppression. When LO signal with the power of 4 dBm at 5.635 GHz is injected, a conversion loss of 6.2 dB is obtained for the mixer. Also, the LO to RF and LO to IF isolation of 30 dB and 40 dB are obtained, respectively. This mixer can be used in the area on wireless LAN application.

• ETRI Journal
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• v.31 no.3
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• pp.247-253
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• 2009

We propose a Ku-band driver and high-power amplifier monolithic microwave integrated circuits (MMICs) employing a compensating gate bias circuit using a commercial 0.5 ${\mu}m$ GaAs pHEMT technology. The integrated gate bias circuit provides compensation for the threshold voltage and temperature variations as well as independence of the supply voltage variations. A fabricated two-stage Ku-band driver amplifier MMIC exhibits a typical output power of 30.5 dBm and power-added efficiency (PAE) of 37% over a 13.5 GHz to 15.0 GHz frequency band, while a fabricated three-stage Ku-band high-power amplifier MMIC exhibits a maximum saturated output power of 39.25 dBm (8.4 W) and PAE of 22.7% at 14.5 GHz.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.159-168
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• 2012

In this paper, a W-band single-chip receiver MMIC for FMCW(Frequency-modulated continuous-wave) radar is presented using $0.15{\mu}m$ GaAs pHEMT technology. The receiver MMIC consists of a 4-stage low noise amplifier(LNA), a down-converting mixer and a 3-stage LO buffer amplifier. The LNA is designed to exhibit a low noise figure and high linearity. A resistive mixer is adopted as a down-converting mixer in order to obtain high linearity and low noise performance at low IF. An additional LO buffer amplifier is also demonstrated to reduce the required LO power of the W-band mixer. The fabricated W-band single-chip receiver MMIC shows an excellent performance such as a conversion gain of 6.2 dB, a noise figure of 5.0 dB and input 1-dB compression point($P_{1dB,in}$) of -12.8 dBm, at the RF frequency of $f_0$ GHz, LO input power of -1 dBm and IF frequency of 100 MHz.