• Electrical & Electronic Materials
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• v.10 no.2
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• pp.156-165
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• 1997

D-E hysteresis loops have been measured for the 65/35 mole % copolymer of vinylidene fluoride and trifluoroethylene over wide temperature range. The remanent polarization and the coercive field at room temperature were estimated to be 75 mC/m$^{2}$ and 55 MV/m respectively. D-E hysteresis loops were observed even below the glass transition temperature(-20.deg. C) and the remanent polarization and the coercive field were larger, as the temperature lower. It seems that the remanent polarization and the coercive field depend on the amorphous region as well as crystalline region in this copolymer. And the ferroelectric-to-paraelectric phase transition was observed at 90.deg. C on heating and 80'C on cooling. Double hysteresis loops were observed at the temperature(85.deg. C) of paraelectric phase.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.277-283
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• 1996

The temperature dependent characteristics of hydrogenerated amorphous silcon thin film transistor (a-Si:H TFT) with a bottom gate of N-Type <100> Si wafer were investigated. Drain current on the hysteresis characteristic curve showed an exponential variation. Hysteresis area of TFT increased with the gate voltage increased and decreased with the small gate voltage. According to the variation of gate voltages, drain current of TFT increased by temperature increase, and hysteresis characteristics mainly depended on the temperature increase. The hysteresis current showed negative characteristics curve over 383K. The hysteresis occurance area and the differences of forward and reverse sweep were increased at the higher temperature. Hysteresis current of I$_{d}$(on/off) ratio decreased at the lower temperature and increased at the higher temperature.e.

• Journal of Sensor Science and Technology
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• v.32 no.4
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• pp.238-245
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• 2023

0.75(Bi_1/2Na_1/2)TiO₃-0.25SrTiO₃ (BNT-25ST) ceramics with high densities were successfully prepared at a sintering temperature of 1,000℃ by adding a mixture of 1 mol% CuO and 0.5 mol% Na₂CO₃ or 0.5 mol% CuO and 0.25 mol% Na₂CO₃. Double polarization-electric field (P-E) hysteresis curves and sprout-shaped bipolar strain-electric field (S-E) hysteresis curves with small negative strains were observed in the pristine and CuO-added BNT-25ST ceramics whereas the Na₂CO₃-added sample showed similar P-E and S-E curves to a typical ferroelectric. The pristine BNT-25ST ceramics showed an extremely large strain and a large-signal piezoelectric strain constant (d₃₃^*): 0.287 % at 80 kV/cm and 850 pm/V at 20 kV/cm. Similar values, 0.248 % at 80 kV/cm and 655 pm/V at 20 kV/cm, were obtained in the CuO-added sample. However, the pristine and CuO-added samples showed large hysteresis in unipolar S-E curves at an electric field of less than 20 kV/cm. The Na₂CO₃-added sample showed smaller values of the strain and d₃₃^* but displayed a linear change and small hysteresis in the unipolar S-E curve. The co-added sample with CuO and Na₂CO₃ displayed intermediate P-E and S-E hysteresis curves.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.12 no.1
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• pp.58-68
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• 1998

A computer-controlled system for measuring dielectric hysteresis has been developed. This system consists of the wave generation par\, the high voltage amplifier part, the measurement part, the data acquisition part and the related controll circuits and is interfaced to P.C(personal computer). The applied voltage and its frequency are controlled by P.C . Since the measured datas can be saved in the RAM of P.C, the analysis and the graphics of the datas are very convenient. As a accuracy test, the capcitances of the commercial mica and styroll capacitors were measured by applying high voltage and the results were good agreement with the rating values. In the test of PZT ceramic sample, the typical D-E hysteresis loops were obtained by applying a single frequency voltage to the sample, and $\varepsilon-E$ and D-E hysteresis loops could be measured at the same time by applying a double frequency voltage to the sample.sample.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1472-1475
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• 1996

D-E hysteresis loops have been measured for the 65/35 mole % copolymer of vinylidene fluoride and trifIuoroethyIene over wide temperature range. The results were analyzed and discussed. The remanent polarization and the coercive field at room termperature were estimated to be 75 $mC/m^3$ and 55 MV/m respectively. D-E hysteresis loops were observed even below the glass transiation temperature$-20^{\circ}C$) and the remanent polarization and the coercive field were larger than larger, as the temperature lower. It seems that the remanent polarization and the coercive field depend on the amorphous region as well as crystalline region in this copolymer. And the ferroelectric-to-paraelectric phase transition was observed at $90^{\circ}C$ on heating and $80^{\circ}C$ on cooling. Double hysteresis loops were observed at the temperature($85^{\circ}C$) of paraelectric phase.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.5A
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• pp.542-548
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• 2008

This paper proposes a handover scheme using uplink and downlink signals in IEEE 802.16e systems. Exploiting the channel reciprocity in TDD systems, the proposed scheme triggers handover initiation process using uplink signal. In addition, it exploits the uplink and downlink hysteresis to determine the handover direction. Simulation results show that the proposed algorithm with joint hysteresis reduces the outage probability by about 10% compared with the mobile assisted handover in IEEE 802.16e.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1317-1319
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• 1997

This paper is to study and develope a measurement apparatus for ferroelectricity. The apparatus consists of wave generation part, high voltage amplifier part, measurement part, data acquisition part and the related controll circuits. Single or double excitation wave is digitalized and sent to the external RAM of wave generation part by personal computer. These datas saved in the RAM are converted to analog excitation wave through D/A converter. The frequency of excitation wave is depend on the read-out speed of the RAM by clock pulse. Such generated wave is applied to high voltage amplifier as a input voltage. The output of high voltage amplifier is applied to ferroelectrics and the response is obtained from the charge amplifier of measurement part. The response is sampled and converted to digital datas through AID converter. These digital datas are automatically saved in the external RAM of acquisition part. The computer takes the digital datas and calculates the electric displacement D, the electric field and the dielectric constant $\varepsilon$. We tested for PZT ceramic sample and could observed the D-E hysteresis lops and ${\varepsilon}_s$-E hysteresis loops with good forms.

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.41-41
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• 2003

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.551-557
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• 1996

To decrease the hysteresis of electric field induced strain, $Y_{2}$ $O_{3}$ dopant of which amount is 0-0.8wt% was added to the (P $b_{0.73}$B $a_{0.27}$)(Z $r_{0}$ 75/ $Ti_{0.25}$) $O_{3}$ ceramics. Electromechanical coupling coefficients of the specimen with 0.1 Wt% $Y_{2}$ $O_{3}$ were $k_{p}$=26.9% and $k_{31}$ =20.4%, which exhibited the maximum value at the constant bias electric field of 10 kV/cm. At the same $Y_{2}$ $O_{3}$ addition amount, electric field piezoelectric constant ( $d_{3l}$) and strain(.DELTA.l/l) showed the maximum values of 139.6*10$^{-12}$ [C/N] and 126*10$^{-6}$ .DELTA. l/l respectively at 10 kV/cm electric field. And the hysteresis of strain showed the minimum value of 17.5%. So, we propose that it is possible to apply PBZT system with $Y_{2}$ $O_{3}$ dopant to the electrostrictive actuator.r.r.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.93-96
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.