• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.4
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• pp.409-412
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• 2002

The LNA(Low Noise Amplifier) is designed for use in low cost commercial application covered fully IMT-2000 band(1920~2170MHz, BW=250MHz). It is optimized source inductance for source lead and designed to equivalent etched line. The LNA uses a high pass impedance matching network for noise match and simple structure. The bias circuit designs have been made self-biased with a negative voltage applied to gate. The power supply voltage is 8V, total current is 180mA. The LNA is biased at a Vgs of -0.4, Vds of 4V for first stage and Vds of 5V for second stage. The LNA is designed competitively for commercial product specification. The measured gain and noise figure of the completed amplifier was 20dB and 1dB, respectively. Also, input VSWR, P1dB and gain flatness was measured of 1.14 ~ l.3dB, 22.4dBm and $\pm$0.45dB, respectively. The designed LNA can be used for commercial product.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.11 s.102
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• pp.1164-1170
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• 2005

This paper presents a dual-band, dual-polarized microstrip patch antenna with simple dual-probe feed. The inter-port isolation and cross-polarization are greatly improved by designing feed structure with annular gap between patch and feed-probe. Measured results show that the antenna's inter-port isolation and cross-polarization in each -10 dB return loss bandwidth of $1.84\;GHz\~l.93\;GHz$ and $2.62\;GHz\~2.81\;GHz$ are greater than 21 dB, greater than 22.2 dB and greater than 27 dB, greater than 19 dB, respectively. The antenna gain is about 6.9 dBi in both frequency bands.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.1 s.343
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• pp.127-132
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• 2006

This paper presents a dual-mode amplifier which operates as amplifier or frequency multiplier according to the input frequency. It satisfies the 802.11a/b/g frequency band of wireless LAN standard. A conventional dual-band wireless LAN transmitter consists of the separating power amplifiers operating at each frequency band, but the proposed dual-mode amplifier operates as an amplifier for the 802.11b/g signal and as a frequency multiplier for the 802.11a signal according to each LAN bias condition. The amplifier mode shows the gain of 13dB, the PldB of 17dBm and second harmonic suppression of below -37dBc. And the frequency-doubler mode shows the gain of 3.3dB, the output power of 7.3dBm and third harmonic suppression of below -50dBr.

• Journal of Sensor Science and Technology
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• v.26 no.5
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• pp.348-352
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• 2017

In this paper, we propose a high resolution A/D converter for a sensor interface that processes low frequency AC signals. A 6b SAR ADC with low power consumption and a 11b incremental ADC with high resolution are combined together to perform 15b resolution. Conventional hybrid ADC has a disadvantage that it can convert t only DC signal, but in this paper, it is possible to convert data to AC signal by increasing input range of incremental ADC. The decimation filter is implemented on-chip. The designed Hybrid ADC operates at supply voltage of 1.8V and consumes the current of 6.98uA. The OSR (oversampling ratio) is 90. And SFDR, SNDR, ENOB and FoMs are 96.59dB, 88.47dB, 14.4-bit and 139.5dB, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.632-635
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• 2008

In this paper, a diplexer circuit to separate GSM/CDMA band is designed using a LTCC (Low Temperature Cofired Ceramic) multi-layer technology. In order to increase a integration capability of the diplexer, it is designed in 6-layer LTCC sunstrate with a elative dielectric constant of 7.2 using 3-dimensional (3-D) multi-layer inductors and capacitors. The size of the designed diplexer including CB-CPW pads is $3,450{\times}4,000{\times}600{\mu}m^3$. An insertion loss (IL) and return loss of GSM band are less than -0.23dB and -10dB, respectively. In the case of CDMA band, the IL of -0.53dB and RL of below -10dB are archieved.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.559-562
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• 2002

본 논문에서는 최근 제한적으로 사용이 승인된 UWB(초광대역： Ultra-Wideband) 통신을 AWGN 하에서 다중 접속을 고려하지 않은 단일 사용사일 경우로 가정시, M진 값이 변화함에 따른 에러율과 성능 개선 기법으로 BCH를 채용시의 에러율을 비교 분석하였다. 기존에 연구되어 오던 변조로 PAM(Pulse Amplitude Modulation)과 PPM(Pulse Position Modulation)방식을 비교하였으며 에러율 $10^{-6}$을 기준으로 M=2, 4일 경우 PAM이 PPM보다 약 E$_{b}$/N$_{o}$ =3~4［dB］, M=8 이상의 경우 PPM이 약 E$_{b}$/N$_{o}$ =9［dB］, M=16일 경우 약 E$_{b}$/N$_{o}$ =15［dB］정도 성능이 우수하였다. AWGN 채널 하에서 에러 정정 부호인 BCH(15,7)를 도입하였을 경우 에러율 $10^{-6}$을 기준으로 PAM방식은 약 E$_{b}$/N$_{o}$ 가 약 1［dB］, PPM 방식은 M=2, 4일 경우 약 E$_{b}$/N$_{o}$ =1~1.5［dB］정도 개선되었다.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.6-13
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• 2009

For X-band phased array systems, a power amplifier, a 6-bit phase shifter, a 6-bit digital attenuator, and a SPDT transmit/receive (T/R) switch are fabricated and measured. All circuits are demonstrated by using CMOS 0.18 um technology. The power amplifier has 2-stage differential and cascade structures. It provides 1-dB gain-compressed output power ($P_{1dB}$) of 20 dBm and power-added-efficiency (PAE) of 19 % at 8-11 GHz frequencies. The 6-bit phase shifter utilizes embedded switched filter structure which consists of nMOS transistors as a switch and meandered microstrip lines for desired inductances. It has $360^{\circ}$ phase-control range and $5.6^{\circ}$ phase resolution. At 8-11 GHz frequencies, it has RMS phase and amplitude errors are below $5^{\circ}$ and 0.8 dB, and insertion loss of $-15.7\;{\pm}\;1,1\;dB$. The 6-bit digital attenuator is comprised of embedded switched Pi-and T-type attenuators resistive networks and nMOS switches and employes compensation circuits for low insertion phase variation. It has max. attenuation of 31.5 dB and 0.5 dB amplitude resolution. Its RMS amplitude and phase errors are below 0.4 dB and $2^{\circ}$ at 8-11 GHz frequencies, and insertion loss is $-10.5\;{\pm}\;0.8\;dB$. The SPDT T/R switch has series and shunt transistor pairs on transmit and receive path, and only one inductance to reduce chip area. It shows insertion loss of -1.5 dB, return loss below -15 dB, and isolation about -30 dB. The fabricated chip areas are $1.28\;mm^2$, $1.9mm^2$, $0.34\;mm^2$, $0.02mm^2$, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.5
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• pp.123-127
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• 2017

This paper fabricated and analyzed the image rejection mixer that uses FET's channel resistance. It can be applied for capacity 64QAM that has 50MHz~90MHz of IF band, 8.17GHz of LO frequency and 8.08~8.12GHz of RF band. When IF input power is -20dBm and LO input power is 10dBm, RF output power is obtained -33.2dBm. In this case, conversion loss is 12.9dB, the suppression of 14.3dB for LO frequency and 10.4dB for image frequency. The result of two tone test shows great IMD characteristics with 51.7dBc.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.2
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• pp.1-9
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• 1997

For the reduction of parasitic inductance and matching of bonding wire in the package of microwave devices, we propose multiple bonding wires buried in a dielectric material of FR-4 composite. This structure is analyzed using the method of moments (MoM) and compared with the common bondwires and ribbon interconnections. The FR-4 composite is modelled by the cole-cole model which can consider the loss and the variation of the permittivity in a frequency. At 20 GHz, the parasitic reactance is reduced by 90%, 80%, 60% compared to those of a single bonding wire in air, double bonding wires in air and ribbon interconnection in air, respectively. Also, the new bondwire shows very good matching of 60.ohm characteristic impedance and has 15dB, 10dB, 5dB improvement of the return loss and 2.5dB, 0.7dB, 0.2dB improvement of the insertion loss compared to the common interconnections. This technique can minimize the parasitic effect of bondwires in microwave device packaging.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.66-70
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• 2003

In this paper a plannar singly balanced diode Miter for 24GHz band application is designed and implemented using a microstrip line and two schottky barrier beam lead mixer diodes. The implemented mixer have a conversion loss of 6 [dB], LO/RF isolation of 23 [dB], input 1dB compression point of 4 [dBm]. this diode mixer would be useful for homedyne radar.