• KSTLE International Journal
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• 제4권2호
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• pp.47-51
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• 2003

Sliding wear tests have been carried out in room temperature air and water in order to compare the wear resistance of Zr-xNb-xSn alloys of various alloying elements (Nb and Sn). The main focus was to quantitatively compare the wear properties of the recently developed Zr-xNb-xSn alloys with the commercial ones using the evaluation parameters of the wear resistance with the consideration of the worn area. As a result, the recently developed alloys had a similar wear resistance compared with the commercial ones. The dominant factor governing the wear resistance was the protruded volume of the wear debris that was formed on the worn area in the air condition, but the accommodation of the plastic deformation on the contact area in water. In addition, the worn area size appeared to be very different depending on the tested alloys. To evaluate the wear resistance of each test specimen, the ratio of the wear volume or the protruded volume to the worn area ($D_e$ or $D_p$) is investigated and proposed as the evaluation parameters of the wear resistance.

• 한국자동차공학회논문집
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• 제19권2호
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• pp.98-104
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• 2011

The introduction of a diesel engine into the passenger car and light duty applications in the United States involves significant technical challenges for the automotive makers. This paper describes the SCR System optimization procedure for such a diesel engine application to meet Tier2 Bin5 emission regulation. A urea SCR system, a representative $NO_x$ reduction after-treatment technique, is applied to a 3.0 liter diesel engine. To achieve the maximum $NO_x$ reduction performance, the exhaust system layout was optimized using series of the computational fluid dynamics and the urea distribution uniformity test. Furthermore a comprehensive simulation model for the key factors influencing $NO_x$ reduction performance was developed and embedded in the Simulink/Matlab environment. This model was then applied to the urea SCR system and played a key role to shorten the time needed for SCR control parameter calibration. The potential of a urea SCR system for reducing diesel $NO_x$ emission is shown for FTP75 and US06 emission standard test cycle.

• E2M - 전기 전자와 첨단 소재
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• 제9권5호
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• pp.439-444
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• 1996

0.15(B $a_{0.95}$ S $r_{0.05}$)O-0.15(S $m_{2(1-x}$/N $d_{2x}$) $O_{3}$-0.7Ti $O_{2}$(x=0-10[m/o]) ceramics were fabricated by mixed oxide method. Microwave dielectric properties were investigated with contents of N $d_{2}$ $O_{3}$. In the case of specimen with N $d_{2}$ $O_{3}$(6[m/o]), dielectric constant, quality factor and temperature coefficient of resonant frequency were 78.14, 2938(at 3[GHz]) and +14.19[ppm/.deg. C], respectively. By comparison its properties with undoped specimen, dielectric constant and quality factor were highly improved, but the temperature coefficient of resonant frequency was increased to positive value......

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1140-1143
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• 2006

We report on the fabrication of P3HT-based thin-film transistors (TFTs) for liquid crystal display that consist of $NiO_x$, poly-vinyl phenol (PVP), and Ni for the source-drain (S/D) electrodes, gate dielectric layer, and gate electrode, respectively The $NiO_x$ S/D electrodes of which the work function is well matched to that of P3HT are deposited on a P3HT channel by electron-beam evaporation of NiO powder. The maximum saturation current of our P3HT-based TFT is about $15{\mu}A$ at a gate bias of -30 V showing a high field effect mobility of $0.079cm^2/Vs$ in the dark, and the on/off current ratio of our TFT is about $10^5$. It is concluded that jointly adopting $NiO_x$ for the S/D electrodes and PVP for gate dielectric realizes a high-quality P3HT-based TFT.

• 소성∙가공
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• 제20권7호
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• pp.518-523
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• 2011

The three dimensional geometries of an aluminum open cell foam before and after uniaxial compressive loading were investigated using the X-ray micro CT(computed tomography). Aluminum 6101-T6 open cell foams of 10, 20, 40 ppi (pore per inch) were considered in this work. After the serial sectioning CT images of aluminum foams were obtained from non-destructive X-ray images, the exact 3D structure were reproduced and visualized with commercial image processing program. The relative density ratio was around the 7.0 to 9.0 range, the unit cells showed anisotropic shapes having the different dimensional ratios of 1.1 to 1.3 between the rise and the transverse directions. The yield stress increased with the relative density ratio and the volumetric strain increased proportionally with compressive strain. The plateau stress in the compressive stress-strain curve was caused by the buckling of ligaments.

• 천문학논총
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• 제30권2호
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• pp.593-594
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• 2015

We present our analysis results for an updated orbital ephemeris for the dipping low mass X-ray binary 4U 1624-49, using the light curve collected by the All Sky Monitor (ASM) on board the Rossi X-ray Timing Explorer (RXTE) and the Monitor of All-Sky X-ray Image (MAXI). To make clear dip profiles, the light curve from the ASM and the MAXI were divided into ten 500d segments and four 400d segments for ASM and MAXI light curves, respectively, and folded with the linear ephemeris proposed by Smale et al. (2001). The phases of dip centers were determined by the method adopted from Hu et al. (2008). The phase drift was then fitted with a linear function. We obtained an updated orbital period of 0.869896(1) d and a phase zero epoch of JD 2450088.6618(57). No clear orbital period derivative is detected with a 2-sigma upper limit of $1.4{\times}10^{-6}(yr)^{-1}$ from a quadratic curve fitting of the dip phase evolution.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.388-391
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• 2003

The properties of these detectors can be controlled by electronics and exposure conditions. Flat-panel detectors for digital diagnostic imaging convert incident x-ray images to charge images. Flat panel detectors gain more interest real time medical x-ray imaging. Active area of flat panel detector is $14{\times}17$ inch. Detector is based on a $2560{\times}3072$ away of photoconductor and TFT pixels. X-ray conversion layer is deposited upper TFT array flat panel with a 500m by thermal deposition technology. Thickness uniformity of this layer is made of thickness control technology(5%) of thermal deposition system. Each $139m{\times}139m$ pixel is made of thin film transistor technology, a storage capacitor and charge collection electrode having geometrical fill factor of 86%. Using the separate driving system of two dimensional mosaic modules for large area, that is able to 4.2 second per frame. Imaging performance is suited for digital radiography imaging substitute by conventional radiography film system..

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.171-172
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• 2007

We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.

• 호남수학학술지
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• 제32권4호
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• pp.643-649
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• 2010

The purpose of this paper is to study some properties of quasi-submaximal spaces and related examples. More precisely, we prove that if X is a quasi-submaximal and nodec space, then X is submaximal. As properties of quasi-submaximality, we show that if X is a quasi-submaximal space, then (a) for every dense $D{\subset}X$, Int(D) is dense in X, and (b) there are no disjoint dense subsets. Also, we illustrate some basic facts and examples giving the relationships among the properties mentioned in this paper.

• Kyungpook Mathematical Journal
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• 제56권4호
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• pp.1047-1067
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• 2016

In this paper, a new class of diagram algebras which are subalgebras of signed brauer algebras, called the Walled Signed Brauer algebras denoted by ${\overrightarrow{D}}_{r,s}(x)$, where $r,s{\in}{\mathbb{N}}$ and x is an indeterminate are introduced. A presentation of walled signed Brauer algebras in terms of generators and relations is given. The cellularity of a walled signed Brauer algebra is established. Finally, ${\overrightarrow{D}}_{r,s}(x)$, is quasi- hereditary if either the characteristic of a field, say p, p = 0 or p > max(r, s) and either $x {\neq}0$ or x = 0 and $r{\neq}s$.