• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06b
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• pp.239-257
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• 1996

$\beta$-BaB2O4는 고출력 가시광선 및 적외선을 발진시키는데 유용한, 비선형 특성을 가진 물질이다. $\alpha$-$\beta$ 상전이 온도가 녹는점보다 18$0^{\circ}C$ 낮기 때문에 보통 flux법으로 단결정을 성장시킨다. 수년전 Itoh등은 $\beta$-BaB2O4단결정을 congruent조성의 용액으로부터 Czochralski법으로 metastable한 상태에서 직접 성장시켰다. 그렇지만 그 공정은 잘 이해되지 않고 있으며 재현하기가 매우 어렵다. 저자들은 $\beta$-BaB2O4단결정을 용액표면온도도 1034$^{\circ}$-1085$^{\circ}C$, pulling rate 3mm/h, 10-30 rpm의 범위에서 성장시켰으며 융액표면의 온도구배는 $\beta$-상으로 성장시키는데 매우 중요한 인자로 여겨진다. Seed로는 직경 1-2mm의 c축방향 $\beta$-BaB2O4단결정 봉이 상용되어 성장방향을 조절하고 열응력을 최소화시켰다. 성장된 $\beta$-상의 단결정들은 6-fold모양을 하며 표면에 작은 비늘같은 것들이 붙어있고 중심부에 core가 있는 것을 알았다. Flux법으로 성장시킨 $\beta$-BaB2O4단결정을 사용한 seeds는 단결정 성장 및 냉각 중에 cracks이 자주 발생하였으며, boule의 cracks은 afterheater를 사용할 경우 다소 줄일 수 있었다. 성장된 단결정의 광학특성이 측정되었다.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.101-104
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• 1998

• Journal of the Korean Ceramic Society
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• v.21 no.3
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• pp.271-277
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• 1984

To study interface between crystals grown and molten state in the crusible. Pulling and rotating rate of the shaft were varied in LiF crystal growth by Czochralski method. Lower speed of the pulling and rotating rate increased the degree of convexity in solid-liquid interface and higher speed of the pulling and rotating rate decreased it. Optimum condition of LiF crystal growth obtained as pulling rate was 6.5cm/h when it rotated as 46rpm.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.111-114
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• 1998

Lithium Niobate {{{{ { LiNbO}_{ 3} }}}} single crystals grown by Czichralski method at the congruent composition, have ferroelectric microdomains. These microdomins were investigated by chemical etching with hydrofluoric acid (HF) AND NITRIC ACID ({{{{ { HNO}_{3 } }}}}), and by us ing optical microscopy, scanning electron microscopy and atomic force microscopy

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.4
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• pp.140-145
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• 2008

Silicon single crystals are grown by Czochralski (CZ) method in different growing conditions. The different shapes of the crystal-melt interface are obtained with various magnetic fields. Effects of zero-Gauss plane (ZGP) shape and magnetic intensity (MI) on the crystal-melt interface in the crystal experimentally are investigated. The shape of ZGP is not only flat but also parabolic, which is due to magnetic ratio (MR) of the lower to upper current densities in the configurations of the cusp-magnetic fields. As the MR increases, the crystal-melt interface becomes more concave. It means that the hot melt can be easily transported to the crystal-melt interface with increasing the MR. Effective shape of the crystal-melt interface is found to depend on the magnetic field in cusp-magnetic CZ method. The experimental results are compared with other studies and discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.4
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• pp.141-147
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• 2018

Solar energy has attracted big attentions as one of clean and unlimited renewable energy. Solar energy is transformed to electrical energy by solar cells which are comprised of multi-silicon wafer or mono-silicon wafer. Monosilicon wafers are fabricated from the Czochralski method. In order to decrease fabrication cost, increasing a poly-silicon charge size in one quartz crucible has been developed very much. When we increase a charge size, the temperature control of a Czochralski equipment becomes more difficult due to a strong melt convection. In this study, we simulated a Czochralski equipment temperature at 20 inch and 24 inch in quartz crucible diameter and various charge sizes (90 kg, 120 kg, 150 kg, 200 kg, 250 kg). The simulated temperature profiles are compared with real temperature profiles and analyzed. It turns out that the simulated temperature profiles and real temperature profiles are in good agreement. We can use a simulated profile for the optimization of real temperature profile in the case of increasing charge sizes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.148-153
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• 2001

New piezoelectric $Ca_{3}NbGa_{3}Si_{2}O_{14}$ (CNGS) single crystal was grown using the Czochralski technique. The crystal structure of CNGS was found to be isostructural with $A_{3}BC_{3}D_{2}O_{14}$. The unit cell parameters were a=8.087 and c=4.983 and the space group was P321. The distribution of each cation was found to be ordered in each site. Some piezoelectric properties of CNGS are showed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.1
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• pp.20-29
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• 1992

In $BaTiO_3-NaNbO_3$ system, complete series of solid solution occurs and $30BaTiO_3{cdot}70NaNbO_3$ composition is congruently melted. Single crystals of $30BaTiO_3{cdot}70NaNbO_3$, composition were grown by Czochralski method in this investigation. Single crystals with dimensions of 15 - 20mm diameter and 20 - 30mm length, were grown at the pulling rate of 2.0mm/h and the rotation rate of 5.0 -l0rpm. Core structures were found in the grown crystals and inclusions, cellular boundaries existed at the core region. The origin of core occuring was unstability of the crystal- melt interface due to the poor conductivity of latent heat through the crystal during the crystal growing process. Obtained crystals were optically homogeneous except the core region and showed high optical transmittance in the visible range.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.470-474
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• 1999

We have successfully grown <111>-oriented $(La,Sr)(Al,Ta)O_{3}\;(LSAT)$ mixed-perovskite single crystals and <0001>-oriented ${Ca_{8}La_{2}(PO_{4})}_{6}O_2$ (CLPA) single crystals with the apatite structure by the Czochralski method. The compositional and lattice parameter uniformity of the crystals are discussed in relation to the growth conditions. Since LSAT and CLPA single crystals have excellent lattice matching with GaN, they are promising as new substrates for the growth of high quality GaN epitaxial layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.5
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• pp.197-201
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• 2010

$ZnWO_4$ nanocrystallines were prepared from polymeric complex method using microwave irradiation. The average nanocrystalline sizes were 18~25 nm showing an ordinary tendency to increase with the temperatures from 400 to $600^{\circ}C$. Bulk type single crystals of $ZnWO_4$ were grown successfully in the [100], [010] and [001] directions using the Czochralski method. The effect of the growth parameters, such as the rotation speed, pulling rate and diameter of the grown crystals, were examined. The hardness, thermal expansion coefficients and dielectric constants of the crystals were evaluated.