• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.12
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• pp.1667-1675
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• 2001

Numerical simulations are carried out for the liquid encapsulant Czochralski(LEC) by imposing a magnetic field. The use of a magnetic field to the crystal growth is to suppress melt convection and to improve the homogeneity of the crystal. In the present numerical investigation, we focus on the range of 0-0.3Tesla strength for the axial and cusped magnetic field and the effect of the magnetic field on the melt-crystal interface, flow field and temperature distribution which are the major factors to determine the quality of the single crystal are of particular interest. For both axial and cusped magnetic field, increase of the magnetic field strength causes a more convex interface to the crystal. In general, the flow is weakened by the application of magnetic field so that the shape of the melt-crystal interface and the transport phenomena are affected by the change of the flow and temperature field.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.5
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• pp.193-198
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• 2011

Recently sapphire crystals are used in LED applications. The Czochralski (CZ) growth process is one of the most important techniques for growing high quality sapphire single crystal. A successful growth of perfect single crystals requires the control of heat and mass transport phenomena in the CZ growth furnace. In this study, the growth processes of the sapphire crystal in an inductively heated CZ furnace have been analyzed numerically using finite element method. The results shown that the high temperature positions moved from the crucible surface to inside the melt and the crystal-melt interface changed to the flat shape when the rpm was increased. Also the crystal-melt interface shape has been influenced by the shoulder shape of the grown crystal during the initial stage.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.3
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• pp.388-397
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• 1999

Numerical simulations are carried out for the magnetic Czochralski single crystal growth system. It Is shown that a magnetic field significantly suppresses the convective flow and as the strength of magnetic field becomes to be stronger, the heat transfer in the melt is dominated by conduction rather than convection. By imposing a cusp magnetic field, the growth interface shape becomes convex toward the melt. When the axial magnetic field is imposed, there occurs an inversion of the interface shape with increase of the magnetic field strength. The oxygen concentration near the interface decreases with increasing cusp magnetic field strength while axial field causes an increase of an oxygen concentration at the central region and decrease of that at the edge of the crystal. The results show that the cusp magnetic field has advantages over an axial magnetic field In the radial uniformity of oxygen as well as in the additional degree of control.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.4 no.1
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• pp.121-131
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• 2000

Melt flow, heat and mass transfer of oxygen have been analyzed numerically in the process of Czochralski single crystal growth of silicon under the influence of misaligned cusp magnetic fields. Since the silicon melt in a crucible for crystal growth is of high temperature and of highly electrical-conducting, experimentation method has difficulty in analyzing the behavior of the melt flow. A set of simultaneous nonlinear equations including Navier-Stokes and Maxwell equations has been used for the modelling of the melt flow which can be regarded as a liquid metal. Together with the melt flow which forms the Marangoni convection, a flow circulation is observed near the comer close both to the crucible wall and the free surface. The melt flow tends to follow the magnetic lines instead of traversing the lines. These flow characteristics helps the flow circulation exist. Mass transfer characteristics influenced by the melt flow has been analyzed and the oxygen absorption rate to the crystal has been calculated and turned out to be rather uniform than in the case of an aligned magnetic field.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.526-526
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• 1996

The single crystal of LiTaO3 is well known eletro-optic material as well as the piezoelectric one applied to SAW filter. LiTaO3 has large electro-optic effects, so applied to optical switch, acosto-optic deflector, and optical memory device using photorefractive effects. The crystal growth of SAW-grade LiTaO3 has been studied many aspects, but there is no detail research about optic-grade crystal growth. The conditions of optic-grade LiTaO3 single crystal are as below. The optical transmittance must be over 75%, and axial and radial concentratiom uniformity below 1%. The variation of Curie temperature depending on Li/Ta ratio must be also below 2$^{\circ}C$ and no internal no internal cracks and defects. Because of the limitation of crystal quality, the growing of optic-grade LiTaO3 single crystal is very difficult compared with the growing of SAW-grade. In this research, upper conditions of optic-grade single crystal was investigated after growing of 1 inch diameter and 1.5 inch length LiTaO3 single crystal having no internal cracks and defects using Czochralski method. Curie temperature was determined with DSC and measuring capacitance and lattice parameter was calculated about the grown crystal and ceramic powder samples of various Li/Ta ratio. The result of Tc variation was below 1.2$^{\circ}C$ all over the grown crystal, so it is confirmed that LiTaO3 was grown under congruent melting composition having optical homogeniety. Also, the optical transmittance was about 78%, which was sufficient for optical device.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.179-181
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• 1997

When grown the oxide single crystal including Li-ion, optimum oxygen condition is needed. Color and crack are caused in single crystal according too the change in the condition of the oxygen. LiTaO₃ crystals grown from off-composition of congruent melt composition under oxygen deficieny condition didn't generate any crack. LiNbO₃. LiTaO₃ crystals grown from congruent melt composition under optimum oxygen condition caused pale yellow color or colorless with no crack. Color gradually became colorless and generated cracks according to Oxygen excess.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.215-222
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• 2009

Many concepts of external magnetic field applications in crystal growth processes have been developed to control melt convection, impurity content and growing interface shape. Especially, travelling magnetic fields (TMF) are of certain advantages. However, strong shielding effects appear when the TMF coils are placed outside the growth vessel. To achieve a solution of industrial relevance within the framework of the $KRISTMAG^{(R)}$ project inner heater-magnet modules(HMM) for simultaneous generation of temperature and magnetic field have been developed. At the same time, as the temperature is controlled as usual, e.g. by DC, the characteristics of the magnetic field can be adjusted via frequency, phase shift of the alternating current (AC) and by changing the amplitude via the AC/DC ratio. Global modelling and dummy measurements were used to optimize and validate the HMM configuration and process parameters. GaAs and Ge single crystals with improved parameters were grown in HMM-equipped industrial liquid encapsulated Czochralski (LEC) puller and commercial vertical gradient freeze (VGF) furnace, respectively. The vapour pressure controlled Czochralski (VCz) variant without boric oxide encapsulation was used to study the movement of floating particles by the TMF-driven vortices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.2
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• pp.65-68
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• 2010

$Sr_{0.6}Ba_{0.4}Nb_2O_6$ (60SBN) and $Sr_{0.75}Ba_{0.35}Nb_2O_6$ (75SBN) single crystals were grown by Czochralski method. Growing direction was <001>, and as-grown crystals has well-developed (001) plane. Temperature- and frequency dependence of dielectric constant represent relaxor ferroelectrics. 60SBN has wider optical transmittance than 75SBN.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.3-26
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• 1999

We have successfully grown <111>-oriented (La,Sr)(Al,Ta)$O_3$(LSAT) mixed-perovskite single crystals and <0001>-oriented $Ca_8La_2(PO_4)_6O_2$(CLPA) single crystals with the apatite structure by the Czochralski method. The compositional and lattice parameter uniformity of the crystals are discussed in relation to the growth conditions. Since LSAT and CLPA single crystals have excellent lattice matching with GaN, they ar promising as new substrates for the growth of high quality GaN epitaxial layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.1
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• pp.43-50
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• 1992

$ LiNbO_3$ single crystals were grown using the Czochralski Method at various pulling speeds. Macroscopic defects such as cracks, bubbles and cellular structures were observed in some crystals. Cracks and bubbles observed in the crystals depended on the pulling speed and cooling rate. $ LiNbO_3$ crystals of about 15mm diameter could be grown properly at 6-7mm/h pulling speed and $ 20^{circ}C/h$ cooling rate. In order to investigate dielectric properties and optical properties for device application, these properties were measured for the sample cut along a axis and c axis at different temperatures.