• Korean Journal of Materials Research
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• v.2 no.1
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• pp.52-57
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• 1992

The macro defects of $LiNbO_3$ crystals grown by the Czochralski method were strongly influenced by the single crystal growth parameters such as growth rate, thermal gradient and crystal rotation rate. The optimum growth conditions of a $LiNbO_3$ single crystal with 1" in diameter were $70~100^{circ}C/cm$ temperature gradient, 5~10 mm/hr growth rate and 40 rpm crystal rotation rate. In these conditions, we could grow crystals which had no cellular structure with easy diameter control, and any crack was not formed after the crystal was cooled.oled.

• Korean Chemical Engineering Research
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• v.58 no.3
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• pp.369-380
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• 2020

Most mono-crystalline silicon ingots are manufactured by the Czochralski (Cz) process. But If there are oxygen impurities, These Si-ingot tends to show low-efficiency when it is processed to be solar cell substrate. For making single-crystal Si- ingot, We need Czochralski (Cz) process which melts molten Si and then crystallizing it with seed of single-crystal Si. For melts poly Si-chunk and forming of single-crystalline Si-ingot, the heat transfer plays a main role in the structure of Cz-process. In this study to obtain high-quality Si ingot, the Cz-process was modified with the process design. The crystal growth simulation was employed with pulling rate and rotation speed optimization. Studies for modified Cz-process and the corresponding results have been discussed. The results revealed that using crystal growth simulation, we optimized the oxygen concentration of single crystal silicon by the optimal design of the pulling rate, rotation speed and melt charge level of Cz-process.

• Journal of the Korean Ceramic Society
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• v.29 no.3
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• pp.189-194
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• 1992

In order to grow a 127.86$^{\circ}$rotated LiNbO3 single crystal with good characteristics of surface acoustic wave (SAW) up to 80 mm in diameter, the temperature gradient of furnace, the growth rate and the rotation rate of crystal were changed. We could grow a crystal which had few macro defects at the conditions of temperature gradient as 30~6$0^{\circ}C$/cm, growth rate as 5 mm/hr and rotation rate as 8 rpm. The experimental ranges of the growth conditions are as follows. Temperature gradient was varied from 20 to 20$0^{\circ}C$/cm, growth rate as 5~7 mm/hr and crystal rotation rate as 6~12rpm.

• Korean Journal of Metals and Materials
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• v.47 no.11
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• pp.734-739
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• 2009

It is well known that the temperature and the flow pattern of the crystal-melt interface affect the qualities of the single crystal in the Czochralski process. Thus the temperature profile in the growth system is very important information. This work focuses on controlling the temperature of the silicon melt with a thermal gradient of the crucible. Therefore, the side heater is divided into three parts and an extra heater is added at the bottom for thermal gradient. The temperature of the silicon melt can be strongly influenced and controlled by the electric power of each heater.

• Korean Journal of Crystallography
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• v.4 no.1
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• pp.11-17
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• 1993

Corundum single crystals were grown by the Czochralski technique. Relationships between crystal quality and crystal growth factors such as pulling rate, rotation rate and temperature of the melt were investigated. Optimum pulling and rotation rate for high quality corundum single crystal growth were 4.0mm/hr, 30rpm respectively. Pore was a main defect in corundum crystal and also discussed how to remove this defect by melt temperature control. Growth direction of as grown crystals was identified with(0001). And this direction had largest growth rate. Room temperature absorption spectra were measured and discussed for Cr3+ion doped and non-doped corundum crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.6
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• pp.219-224
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• 2022

CaF₂ single crystal has a large band gap (12 eV), and it is used for optical windows, prisms, and lenses due to its excellent transmittance in a wide wavelength range and low refractive index. Moreover, it is expected to be one of the materials for ultraviolet transmissive laser optical components. CaF₂ belongs to the fluoride compounds and has a face-centered cubic (FCC) structure with three sub-lattices. The representative method for CaF₂ single crystal growth is Czochralski, which method has the advantages of high production efficiency and the ability to make large crystals. In this study, X-ray diffraction (XRD), X-ray rocking curves (XRC) measurement, and chemical etching were performed to analyze the crystallinity and defect density of the CaF₂ single crystals, grown by the Czochralski method. Fourier-transform infrared spectroscopy (FT-IR) and UV-VIS-NIR spectroscopy systems were used to investigate the optical properties of the CaF₂ crystal. The provability of various applications, including UV application, was systematically investigated with various analysis results.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.325-335
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• 1994

The spinel $MgO.Al_20_3$ single crystals were grown by FZ (floating zone) method. Its melting point is about, $2135^{\circ}C$ and is important to the process of the growth from the melt. There have been some reports of the growth by Czochralski and Verneuil method. However, this study is the first trial to the spinel crystal with the application of FZ method. In this study, $MgAl_2O_4$ spinel crystals were grown by using FZ method which uses the ellipsoidal mirror furnace having infrared halogen lamps as a heat source. With dopants of transition metal ions, it was possible to melt the feed rod which does not absorb the infrared rays due to the transparent properties to infrared ray of spinel itself and the red, green and blue colored spinel single crystals could be grown more easily. As a conclusion, the purpose of this study is to find the spinel single crystal growth mechanism with respect to th growth interfaces and molten zone stability and to characterize the state of growth resulting from the concavity to the melt of interfaces.

• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.640-645
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• 1999

Recently rapid progress of electronic and telecommunication technology requires the development of new piezoelectric materials and cellular communication is more and more used in various fields. Langasite(La3Ga5SiO14) is suitable for new piezoelectric properties. Langastie can be applied as communication devices due to intermediate piezoelectric properties which are similar to those of quartz and LiTaO3 in its acoustic characteristics. So in this study Langastie(La3Ga5SiO14) single crystal with 47 mm in diameter and 25mm in length were sucessfully grown by using self-designed Czochralski system. In addition optimum growth conditions for the piezoelectric applications throughout estimation of crystal quality and frequency characteristics were investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.1-10
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• 1996

A numerical study was conducted on the effects of the cusp magnetic field in 8" silicon single crystal grwoth by Czochralski method. For a damping effects simulation by magnetic field, low reynolds number ${\kappa} - {\varepsilon}$ model was adopted. Symmetrci cusp magnetic field has a effect of damping streamline crystal, is lowerd with the increasing cusp magnetic field intensity. The uniformity of the oxygen concentration was improved. The asymmetirc cusp magnetic field increased the oxygen concentration however, oxygen concentration distribution in the radial direction was remained uniform. Suitable combination of symmetric and asymmetric cusp magnetic fields could give uniform and low oxygen concentration in the axial direction.tion.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.394-399
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• 2000

Langasite (LGS) is a material hoped to meet needs required of new base materials for future communication devices (e.g.SAW filters). In this study, synthesis of new materials was pursued by developing new compounds with the host structure of Langasite in hopes to obtain materials with improved characteristics; compounds including $La_3$$Ta_{0.5}$$Ga_{5.5}$$O_{14}$(LTG)and $La_3$$Nb_{0.25}$$Ta_{0.25}$$Ga_{5.5}$$O_{14}$(LNTG) were synthesized by solid state reactions. Characteristics of the compound synthesized in question were determined. The single crystals of Langasite-type were grown using the Czochralski method. The growth conditions for LTG and LNTG were studied and were found to be similar to those of LGS. The growth characteristics of LNTG were observed by studying etch pit formation density along the crystal length.