• Corrosion Science and Technology
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• v.6 no.3
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• pp.133-139
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• 2007

Nickel powder was coated with aluminum nitrate solution to increase the thermal stability of a porous nickel support and control the nickel content in the Pd-Cu-Ni ternary alloyed membrane. Raw nickel powder and alumina coated nickel powder were uniaxialy pressed by home made press with metal cylindrical mold. Though the used nickel powder prepared by pulsed wire evaporation (PWE) method has a good thermal stability, the porous nickel support was too much sintered and the pores of porous nickel support was plugged at high temperature (over $800^{\circ}C$) making it not suitable for the porous support of a palladium based composite membrane. In order to overcome this problem, the nickel powder was coated by alumina and alumina modified porous nickel support resists up to $1000^{\circ}C$ without pore destruction. Furthermore, the compositions of Pd-Cu-Ni ternary alloy membrane prepared by magnetron sputtering and Cu-reflow could be controlled by not only Cu-reflow temperature but also alumina coating amount. SEM analysis and mercury porosimeter analysis evidenced that the alumina coated on the surface of nickel powder interrupted nickel sintering.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.326-326
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• 2013

본 연구에서는 회전 원통형 마그네트론 스퍼터링 시스템(Cylindrical Magnetron Sputtering)을 이용하여 성막한 Sn-doped $In_2O_3$ (ITO) 투명전극의 두께 변화에 따른 전기적, 광학적, 구조적 특성을 연구하였다. 회전 원통형 마그네트론 스퍼터링 시스템을 이용한 ITO 투명전극은 박막의 두께가 50~1,000 nm의 두께로 증가함에 따라 비저항 값은 일정하게 유지되나 면저항 값이 $37.8{\Omega}$/square로부터 $1.5{\Omega}$/square로 점차적으로 감소됨을 확인할 수 있었다. 또한 ITO 박막의 두께 증가가 50 nm에서 1,000 nm로 증가함에 따라 400~800nm 파장 범위에서 71~83％의 높은 광투과도를 나타내었다. 두께 변화에 따른 광학적 특성 변화를 설명하기 위해 Spectroscopic ellipsometry 분석을 실시하였으며 이를 기반으로 박막 두께와 투과도의 상관관계를 설명하였다. 한편, 원통형 마그네트론 스퍼터로 성장시킨 ITO 박막은 두께가 50~200 nm의 범위에서는 (222) 방향으로 우월 성장하였으나, 200-1000 nm 두께 범위에서는 우월 성장방향이 (400)과 (622)로 바뀜을 X-ray diffraction (XRD) 분석을 통하여 확인하였다. 이를 통해 박막의 두께변화에 따른 전기적/광학적 특성의 변화는 박막의 구조와 매우 밀접한 상관관계가 있음을 알 수 있었다.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.77-84
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• 1997

Super precision resistor was manufactured by controlling properly the thickness of $TaN_{0.1}$ (negative TCR) and Cr(positive TCR) deposited on cylindrical alumina substrate (diameter: 4 mm, length: 11 mm). Multilayer thin film resistor of $Ta_2O_5/TaN_{0.1}$/Cr/Alumina (substrate) was manufactured by depositing of $Ta_2N_5$ film on $TaN_{0.1}$ film to increase Rs to the level of 1;k{\Omega}/{\box}$ and to passivate the film. Super precision resistor with TCR of $20\pm5 ppm/^{\circ}C$ and Rs of $1\;k{\Omega}/{\box}$ was manufactured by depositing thin layers of about 10 nm $Ta_2O_5$, 100 nm $TaN_{0.1}$ and 50 nm Cr film under the properly controlled sputtering condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.715-720
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• 2015

The photoinduced hydrophilicity of $TiO_2/WO_3$ double layer films was fabricated by using a conventional rf-magnetron sputtering method. The photoinduced hydrophilic reaction of the $TiO_2$ surface was enhanced by the presence of $WO_3$ under the $TiO_2$ layer by irradiation of a 10 W cylindrical fluorescent light bulb. However, when the $TiO_2$ and $WO_3$ layers were separated by an insulating layer, the surface did not appeared high hydrophilic, under the same light bulb. The enhanced photoinduced hydrophilic reaction can be explained by the charge transfer between $TiO_2$ and $WO_3$ layers. It was also demonstrated that visible light passing through the $TiO_2$ layer could excite $WO_3$. Thus, visible light can be used for the hydrophilic reaction in the present $TiO_2/WO_3$ system.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.201-206
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• 2000

Effects of the post-annealing temperature of CeO$_2$ buffer layers on the properties of YBCO films on CeO$_2$-buffered sapphire were investigated. 45 nm-thick CeO$_2$ buffer layer was prepared in-situ on r-cut sapphire using an on-axis rf magnetron sputtering method, which was later post-annealed at temperatures between 950$^{\circ}$C and 1100$^{\circ}$C in an oxygen-flowing environment. YBCO films were prepared on CeO$_2$-buffered sapphire (CbS), for which the surface morphology, crystal structures and electrical properties of the YBCO films were studied. YBCO films on post-annealed CbS appeared to have better properties than those on as-grown CbS with regard to the morphological, structural and electrical properties when the YBCO films were prepared on CeO$_2$ buffer layer post-annealed at temperatures of 1000 - 1050$^{\circ}$C. A TE$_{011}$ mode rutileloaded cylindrical cavity resonators was fabricated with the YBCO films placed as the endplates, for which the unloaded Q of the resonator was measured. It turned out that the resonator with the endplates prepared from the YBCO films on postannealed CbS at 1000 $^{\circ}$C showed the highest unloaded Q with the value more than 8 ${\times}$ 10$^5$ at 30 K and 8.6 CHz, revealing that the YBCO films on post-annealed CbS at 1000$^{\circ}$C the temperature could be the lowest among the YBCO films on post-annealed CbS.

• Korean Journal of Materials Research
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• v.5 no.5
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• pp.598-605
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• 1995

Thin films of $YB_{2}Cu_{3}O_{7-d}$ were prepared on various substrated of MgO(100), $SrTiO_{3}$, and $LaAlO_{3}$ by using off-axis magentron sputtering methods and annealing in-situ. The prarameters of film fabrication processes had been optimized through a "follow the lcoal maxima" strategy to yield good quality films in therms of the critical temperature $T_{c}$ and the critical current density $J_{c}$. Optimizedproecsses employing a plane magndtron and an cylindrical magnetron yielded $T_{c}$>90K along with $J_{c}$$10^{6}$A/$\textrm{cm}^2$ at 77K and > 2${\times}$$10^{7}$A/$\textrm{cm}^2$ at 5K. The sampels, however, showed degradationinthe properties, after chemical etching for fabrication of microbridges with the line width of 2-10 mocrons. In particular, the value of $T_{c}$ for the microbridges of 2microns was as small as 80%. The degradation was strongly dependent on the line width through a formula : $T_{c}$(e)=$T_{c}$)b) [1-a exp(-1000 bL)} where $T_{c}$(e) and $T_{c}$ (b) are the values of $T_{c}$ in the absolute scale measured after and before chemical etching, respectively and L is the line width in mm. By utilizing a best fitting technique, the proper constant values of a and to b were found as exp(-1.2) and 0.22, respectively. This formula was very useful in estimatiing the upper limit of the device operationtemperature.