• Title/Summary/Keyword: Cutoff Probe

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Detection Technique of Partial Discharge by a Capacitive Probe in Cast-resin Transformers (몰드변압기에서 용량성 프로브에 의한 부분방전 검출 기술)

  • Jung, Kwang-Seok;Park, Dae-Won;Cha, Hyeon-Kyu;Cha, Sang-Wook;Kil, Gyung-Suk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.4
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    • pp.319-324
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    • 2011
  • This paper dealt with a partial discharge (PD) detection method for insulation diagnosis in cast-resin transformers. To detect PD pulse, a planar-capacitive probe was designed and fabricated. The probe has no insulation problem and can be installed on cast-resin transformers even in operation since it does not connect with high voltage conductor. The PD measurement system consists of the capacitive probe, a coupling network of 100 [kHz] low-cutoff frequency, and an amplifier with a gain of 40 [dB] and a frequency bandwidth of 500 [Hz]~45 [MHz]. A plane-needle and a plane-plane electrode system were fabricated to simulate insulation defects in a cast-resin transformer. Sensitivity of the PD measurement system, which is evaluated by a standard calibrator was 0.35 [mV/pC] for positive and 0.45 [mV/pC] for negative, respectively. The PD detection by the capacitive probe was less sensitive than that by a coupling capacitor according to IEC 60270, but we could analyze the magnitude and the phase distribution of PD pulse.

Update on polycystic ovary syndrome

  • Kim, Jin Ju
    • Clinical and Experimental Reproductive Medicine
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    • v.48 no.3
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    • pp.194-197
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    • 2021
  • Polycystic ovary syndrome (PCOS) is a common disorder in reproductive-age women. In 2018, an international evidence-based guideline announced recommendations spanning a wide range of issues on the assessment and management of PCOS. From the 166 recommendations, the present study reviews those that are of particular clinical relevance for daily practice and introduces other relevant studies that have been published since the global guideline. The 2018 guideline increased the antral follicle count cutoff for the diagnosis of PCOS from 12 to 20 when using a high-frequency probe. Hirsutism was defined as having a score of ≥4-6 based on a lower percentile of 85%-90% or cluster analysis, which was lower than the traditionally used 95th percentile-based cutoff. The diagnosis of PCOS in adolescents is challenging, and irregular menstruation was defined carefully according to years from menarche. The use of ultrasonography for the diagnosis of PCOS was restricted to those 8 years after menarche. As medication for non-fertility indications, combined oral contraceptives are the first-line drug. Metformin, in addition to lifestyle modifications, should be considered for adult patients with a body mass index ≥25 kg/m2 for the management of weight and metabolic outcomes. An aromatase inhibitor is the recommended first-line medication for ovulation induction, a subsequent individual patient data meta-analysis also reported the same conclusion. Whether the new global guideline will be fully adopted by many specialists and change clinical practice is open to question. Further studies are needed to better understand and manage PCOS patients well.

Recent Progress of Plasma Research at the VACUUM CENTER in KRISS

  • Yu, Sin-Jae;Kim, Jeong-Hyeong;Seong, Dae-Jin;Sin, Yong-Hyeon;Kim, Dae-Ung;Yu, Gwang-Ho;;Seo, Byeong-Hun;Na, Byeong-Geun;Jang, Hong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.152-152
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    • 2013
  • 본 발표를 통해 최근 표준연구원 진공센터에서 수행된 연구들을 진공분과 회원들께 소개하려한다. 발표의 목적은 표준연구원 및 진공센터를 간략히 소개하고 최근 지원을 받아 수행된 cutoff probe, 레이져산란 실험, 대기압 플라즈마, 나노입자 실험등을 개론의 수준으로 설명하고 발견된 재미있는 물리현상을 발표함으로써 토론의 장을 마련함에 있다.

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Limitations of time resolution and spatial overlap caused by group velocity mismatch in experiments using ultrashort UV and visible optical pulses. (자외선과 가시광선 극초단 펄스 실험의 군속도 차이에 의한 시간 분해능 및 공간 겹침의 제한)

  • 김성규
    • Korean Journal of Optics and Photonics
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    • v.5 no.2
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    • pp.252-259
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    • 1994
  • The method of calculating overlap dispersion caused by group velocity mismatch between uv and visible pulses in ultrafast pump-probe experiments is presented to discuss limitations of the time resolution and signal intensity. The calculations show arrangements using a single focusing lens shall result in undesirable time resolution and low signal intensity. Achromatic doublets result in unrealistic solutions. However, dramatic improvement in the time resolution and signal intensity is expected in the optical arrangements using separate lens for each pulse and in the arrangements using a cutoff secondary lens with a main lens. lens.

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GPU Based Feature Profile Simulation for Deep Contact Hole Etching in Fluorocarbon Plasma

  • Im, Yeon-Ho;Chang, Won-Seok;Choi, Kwang-Sung;Yu, Dong-Hun;Cho, Deog-Gyun;Yook, Yeong-Geun;Chun, Poo-Reum;Lee, Se-A;Kim, Jin-Tae;Kwon, Deuk-Chul;Yoon, Jung-Sik;Kim3, Dae-Woong;You, Shin-Jae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.80-81
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    • 2012
  • Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.

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The Effect of Trans-cinnamaldehyde on the Gene Expression of Lipopolysaccharide-stimulated BV-2 Cells Using Microarray Analysis (Trans-Cinnamaldehyde가 Lipopolysaccharide로 처리된 BV-2 cell에 미치는 항염증 기전 연구: Microarray 분석)

  • Sun, Young-Jae;Choi, Yeong-Gon;Jeong, Mi-Young;Hwang, Se-Hee;Lee, Je-Hyun;Cho, Jung-Hee;Lim, Sabina
    • The Journal of Korean Medicine
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    • v.30 no.4
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    • pp.13-27
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    • 2009
  • Objectives: Trans-cinnamaldehyde (TCA) is the main component of Cinnamomi Ramulus and it has been reported that TCA inhibits inflammatory responses in various cell types. Inflammation-mediated neurological disorders induce the activation of macrophages such as microglia in brain, and these activated macrophages release various inflammation-related molecules, which can be neurotoxic if overproduced. In this study, we evaluated gene expression profiles using gene chip microarrays in lipopolysaccharide (LPS)-stimulated BV-2 cells to investigate the antiinflammatory effect of TCA on inflammatory responses in brain microglia. Methods: A negative control group was cultured in normal medium and a positive control group was stimulated with $1{\mu}g/ml$ in the absence of TCA. TCA group was pretreated with $10{\mu}g/ml$ before $1{\mu}g/ml$ LPS stimulation. The oligonucleotide microarray analysis was performed to obtain the expression profiles of 28,853 genes using gene chip mouse gene 1.0 ST array in this study. Results: In positive control group, 1522 probe sets were up-regulated in the condition of the cutoff value of 1.5-fold change and 341 genes with Unigene ID were retrieved. In TCA group, 590 probe sets were down-regulated from among 1522 probe sets and 33 genes with Unigene ID were retrieved, which included 6 inflammation-related genes. We found out that Id3 gene is associated with transforming growth factor-${\beta}$ (TGF-${\beta}$) signaling pathway and Klra8 gene is related to natural killer cell-mediated cytotoxicity pathway. Conclusions: The results mean that TCA inhibits inflammatory responses through down-regulating the expressions of inflammation-related genes in LPS-stimulated BV-2 cells.

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Properties and SPICE modeling for a Schottky diode fabricated on the cracked GaN epitaxial layers on (111) silicon

  • Lee, Heon-Bok;Baek, Kyong-Hum;Lee, Myung-Bok;Lee, Jung-Hee;Hahm, Sung-Ho
    • Journal of Sensor Science and Technology
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    • v.14 no.2
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    • pp.96-100
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    • 2005
  • The planar Schottky diodes were fabricated and modeled to probe the device applicability of the cracked GaN epitaxial layer on a (111) silicon substrate. On the unintentionally n-doped GaN grown on silicon, we deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact achieved a minimum contact resistivity of $5.51{\times}10.5{\Omega}{\cdot}cm^{2}$ after annealing in an $N_{2}$ ambient at $700^{\circ}C$ for 30 sec. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideality factor was 2.4, which are significantly lower than those parameters of crack free one. But in photoresponse measurement, the diode showed the peak responsivity of 0.097 A/W at 300 nm, the cutoff at 360 nm, and UV/visible rejection ratio of about $10^{2}$. The SPICE(Simulation Program with Integrated Circuit Emphasis) simulation with a proposed model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.