• Journal of IKEEE
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• v.24 no.3
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• pp.859-866
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• 2020

This paper proposes a 2-ch DC-DC converter with a wide-input voltage range from 2.9V~5.6V for wearable AMOLED displays. For positive voltage V_POS, a boost converter is designed using an over-charged voltage permissible circuit (OPC) which generates a normal output voltage even if over-input voltage is applied, and a SPWM-PWM dual mode with 3-segmented power transistors to improve efficiency at light load. For negative voltage V_NEG, a 0.5x regulated inverting charge pump is designed to increase power efficiency. The proposed DC-DC converter was designed using a 0.18-㎛ BCDMOS process. Simulation results show that the proposed DC-DC converter generates V_POS voltages of 4.6 V and V_NEG voltage of -0.6V~-2.3V for input voltage of 2.9V to 5.6V. In addition, it has power efficiency of 49%~92%, output ripple voltage has less than 20 mV for load current range of 1 mA~70 mA.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1362-1369
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• 2018

A method aimed at improving the beam-wave interaction efficiency by changing the coupling slot configuration has been proposed in the study of extended interaction oscillators (EIOs). The dispersion characteristics, coupling coefficient and interaction impedance of the high-frequency structure based on different types of coupling slots have been investigated. Four types of coupled cavity structures with different layouts of the coupling slots have been compared to improve the beam-wave interaction efficiency, so as to analyze the beam-wave interaction and practical applications. In order to determine the improvement of the coupling slot to a coupled cavity circuit in an EIO, we designed four nine-gap EIOs based on the coupled cavity structure with different coupling slot configurations. With different operating frequencies and voltages takes into consideration, beam voltages from 27 to 33 kV have been simulated to achieve the best beam-wave interaction efficiency so that the EIOs are able to work in the $2{\pi}$ mode. The influence of the Rb and the ds on the output power is also taken into consideration. The Rb is the radius of the electron beam, and the ds is the width of the coupling slot. The simulation results indicate that a single-slot-type EIO has the best beam-wave interaction efficiency. Its maximum output power is 2.8 kW and the efficiency is 18% when the operating voltage is 31 kV and electric current is 0.5 A. The output powers of these four EIOs that were designed for comparison are not less than 1.7 kW. The improved coupling-slot configurations enables the extended interaction oscillator to meet the different engineering requirements better.