• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2003년도 학술대회논문집
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• pp.233-235
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• 2003

The voltage and current of fluoescent lamp has been successfully calculated in the case of frequency variation. Energy states of mercury atom in the discharge process are regarded as six levels. These calculations have been accurately solved by numerically employing mixed the FDM and the 2nd Runge-Kutta method. The theoretical calculation results and experimental results were presented to verify the feasibility of the modeling. Calculation and experimental results were presented to verify the feasibility of the calculation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 B
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• pp.1367-1369
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• 2004

When an underground pipeline runs parallel with subway DC electrification system, it suffers from stray current corrosion caused by the stray current from the rails negative returns. Perforation due to the stray current corrosion may bring about disastrous accidents such even in cathodically protected systems. Traditionally, bonding methods such as direct drainage, polarized drainage and forced drainage have been used in order to mitigate the damage on pipelines. In particular, the forced drainage method is widely adopted in Busan. In this paper, we report the real-time measurement data of the pipe-to-soil potential variation in the presence and absence of the IR compensation. The drainage current variation was also measured using the Stray Current Logger developed. By analyzing them, the problems of current countermeasures for stray current corrosion are discussed.

• 한국환경과학회지
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• 제6권4호
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• pp.313-322
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• 1997

한국수영만에서 잔차류장의 운동 위치에너지의 계절변화를 연구하기 위하여 우리는 에너지의 수지를 계산하고 조석에너지와 비교했다. 위치에너지는 겨울과 봄철에 크며, 밀도성층이 형성된 여름과 초가을에 작게 나타났다. 잔차류의 운동에너지는 계절적인 변화를 보이고 있으며, 단위면 적당 잔차류의 평균 운동에너지는 6.4$\times$$10^{-4}ergs s^{-1}cm^{-}2$이다. 수영 만에서 잔차류장의 계절변동은 조석잔차류의 운동에너지가 밀도류나 취송류의 운동에너지보다 큰 11월을 제외하고는 밀도류가 지배하고 있다. 잔차류의 주성분인 조석잔차류, 취송류 및 밀도류의 운동에너지의 평균백분율은 잔차류의 운동에너지에 대하여 각각 29.1%, 3.4%, 67.5% 이다. 단위면적당 잔차류의 운동에너지, 위치에너지 및 조석에너지의 비는 각각 1.0 : 6.7$\times$$10^3$ : 8.2$\times$$10^4$ 이다.

• 대한전기학회논문지
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• 제45권3호
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• pp.335-340
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• 1996

The item and structure of current detector depends on the current in conductors. The Hall current detector of these detectors is to use the variation of Hall voltage to conductor's current and it is very difficult for the conventional type to detect small current. In this paper we study experimented-method that detect AC current by using the magnetic modulation method the current, 0[mA]~100[mA]. The experiments results in 5 percent against the conventional, 20 percent in linear error, 0.12[.DELTA.mV/.DELTA.mA] to conventional type, 50[.DELTA.mV/.DELTA.mA] in sensitivity. (author). 7 refs., 15 figs.

• 전기학회논문지
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• 제59권12호
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• pp.2225-2229
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• 2010

In this study, we have investigated the effects of space charge on the conduction current with the variation of applied time of electric field in polymer insulators. We had also improved the PEA method, and then we could measure a simultaneously the space charge and the conduction current in insulators under the DC electric field. From this experiment, we have known the variation of conduction current due to the existence of space charge in XLPE1 and XLPE2.

• 한국전기전자재료학회논문지
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• 제24권5호
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• pp.364-369
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• 2011

Analyzing electrical degradation of polycrystalline silicon transistor to applicable at several environment is very important issue. In this research, after fabricating p channel poly crystalline silicon TFT (thin film transistor) electrical characteristics were compare and analized that changed by gate bias with first measurement. As a result on and off current was reduced by variation of gate bias and especially re duce ratio of off current was reduced by $7.1{\times}10^1$. On/off current ratio, threshold voltage and electron mobility increased. Also, when channel length gets shorter on/off current ratio was increased more and thresh old voltage increased less. It was cause due to electron trap and de-trap to gate silicon oxide by variation of gate bias.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권2호
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• pp.57-59
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• 2001

We investigated the maximum controllable current characteristics of the CB-BRT (Corrugated p-Base-Base Resistance Controlled Thyristor), which suppresses the snap-back effectively and increases the maximum controllable current(MCC) by employing the corrugated p-base. Experimental result shows that, when compared with conventional BRT, the MCC of the CB-BRT exhibits good stability on various process parameters. The MCC of the CB-BRT is larger than that of the conventional BRT by 50%, and the variation of the MCC in CB-BRT, caused by variation of the process parameters, is only 20% of that of the conventional BRT.

• E2M - 전기 전자와 첨단 소재
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• 제9권3호
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• pp.277-283
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• 1996

The temperature dependent characteristics of hydrogenerated amorphous silcon thin film transistor (a-Si:H TFT) with a bottom gate of N-Type <100> Si wafer were investigated. Drain current on the hysteresis characteristic curve showed an exponential variation. Hysteresis area of TFT increased with the gate voltage increased and decreased with the small gate voltage. According to the variation of gate voltages, drain current of TFT increased by temperature increase, and hysteresis characteristics mainly depended on the temperature increase. The hysteresis current showed negative characteristics curve over 383K. The hysteresis occurance area and the differences of forward and reverse sweep were increased at the higher temperature. Hysteresis current of I$_{d}$(on/off) ratio decreased at the lower temperature and increased at the higher temperature.e.

• 한국재료학회지
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• 제12권8호
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• pp.613-616
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• 2002

The polarization properties of $BaTiO_3$ were investigated by using thermally stimulated depolarization current (TSDC) technique. Two peaks were observed at about 400 K (peak A) and 435 K (peak B) from TSDC spectra obtained from the temperature range of 280-500 K. Peak A shows a sharp decrease of TSDC due to extinction of spontaneous polarization above the phase transition temperature of $BaTiO_3$. The values of activation energy of peak A and peak B were calculated to be 0.70 eV and 0.87 eV respectively. From the results of TSDC measurement with a variation of polarizing electric field strength, we found that saturation of total current of TSDC was started from 3kV/cm. However, the amount of total current of TSDC was not affected by the variation of polarizing time.

• Journal of information and communication convergence engineering
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• 제7권2호
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• pp.215-218
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• 2009

In this paper, temperature stable current and voltage references using simple CMOS bias circuit are proposed. To obtain temperature stable characteristics of bias circuit a bandgap reference concept is used in a conventional circuit. The parasitic bipolar transistors or MOS transistors having different threshold voltage are required in a bandgap reference. Thereby the chip area increase or the extra CMOS process is required compared to a standard CMOS process. The proposed reference circuit can be integrated on a single chip by a standard CMOS process without the extra CMOS process. From the simulation results, the reference current variation is less than ${\pm}$0.44% over a temperature range from - $20^{\circ}C$ to $80^{\circ}C$. And the voltage variation is from - 0.02% to 0.1%.