• Title/Summary/Keyword: Current sensors

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Deformation estimation of plane-curved structures using the NURBS-based inverse finite element method

  • Runzhou You;Liang Ren;Tinghua Yi ;Hongnan Li
    • Structural Engineering and Mechanics
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    • v.88 no.1
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    • pp.83-94
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    • 2023
  • An accurate and highly efficient inverse element labelled iPCB is developed based on the inverse finite element method (iFEM) for real-time shape estimation of plane-curved structures (such as arch bridges) utilizing onboard strain data. This inverse problem, named shape sensing, is vital for the design of smart structures and structural health monitoring (SHM) procedures. The iPCB formulation is defined based on a least-squares variational principle that employs curved Timoshenko beam theory as its baseline. The accurate strain-displacement relationship considering tension-bending coupling is used to establish theoretical and measured section strains. The displacement fields of the isoparametric element iPCB are interpolated utilizing nonuniform rational B-spline (NURBS) basis functions, enabling exact geometric modelling even with a very coarse mesh density. The present formulation is completely free from membrane and shear locking. Numerical validation examples for different curved structures subjected to different loading conditions have been performed and have demonstrated the excellent prediction capability of iPCBs. The present formulation has also been shown to be practical and robust since relatively accurate predictions can be obtained even omitting the shear deformation contributions and considering polluted strain measures. The current element offers a promising tool for real-time shape estimation of plane-curved structures.

The Effect of TiO2 Addition on Low-temperature Sintering Behaviors in a SnO2-CoO-CuO System

  • Jae-Sang Lee;Kyung-Sik Oh;Yeong-Kyeun Paek
    • Journal of Powder Materials
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    • v.31 no.2
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    • pp.146-151
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    • 2024
  • Pure SnO2 has proven very difficult to densify. This poor densification can be useful for the fabrication of SnO2 with a porous microstructure, which is used in electronic devices such as gas sensors. Most electronic devices based on SnO2 have a porous microstructure, with a porosity of > 40%. In pure SnO2, a high sintering temperature of approximately 1300℃ is required to obtain > 40% porosity. In an attempt to reduce the required sintering temperature, the present study investigated the low-temperature sinterability of a current system. With the addition of TiO2, the compositions of the samples were Sn1-xTixO2-CoO(0.3wt%)-CuO(2wt%) in the range of x ≤ 0.04. Compared to the samples without added TiO2, densification was shown to be improved when the samples were sintered at 950℃. The dominant mass transport mechanism appears to be grain-boundary diffusion during heat treatment at 950℃.

Novel Design of 8T Ternary SRAM for Low Power Sensor System

  • Jihyeong Yun;Sunmean Kim
    • Journal of Sensor Science and Technology
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    • v.33 no.3
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    • pp.152-157
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    • 2024
  • In this study, we propose a novel 8T ternary SRAM that can process three logic values (0, 1, and 2) with only two additional transistors, compared with the conventional 6T binary SRAM. The circuit structure consists of positive and negative ternary inverters (PTI and NTI, respectively) with carbon-nanotube field-effect transistors, replacing conventional cross-coupled inverters. In logic '0' or '2,' the proposed SRAM cell operates the same way as conventional binary SRAM. For logic '1,' it works differently as storage nodes on each side retain voltages of VDD/2 and VDD, respectively, using the subthreshold current of two additional transistors. By applying the ternary system, the data capacity increases exponentially as the number of cells increases compared with the 6T binary SRAM, and the proposed design has an 18.87% data density improvement. In addition, the Synopsys HSPICE simulation validates the reduction in static power consumption by 71.4% in the array system. In addition, the static noise margins are above 222 mV, ensuring the stability of the cell operation when VDD is set to 0.9 V.

Impedance-based Long-term Structural Health Monitoring for Jacket-type Tidal Current Power Plant Structure in Temperature and Load Changes (온도 및 하중 영향을 고려한 임피던스 기반 조류발전용 재킷 구조물의 장기 건전성 모니터링)

  • Min, Jiyoung;Kim, Yucheong;Yun, Chung-Bang;Yi, Jin-Hak
    • KSCE Journal of Civil and Environmental Engineering Research
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    • v.31 no.5A
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    • pp.351-360
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    • 2011
  • Jacket-type offshore structures are always exposed to severe environmental conditions such as salt, high speed of current, wave, and wind compared with other onshore structures. In spite of the importance of maintaining the structural integrity for offshore structure, there are few cases to apply structural health monitoring (SHM) system in practice. The impedance-based SHM is a kind of local SHM techniques and to date, numerous techniques and algorithms have been proposed for local SHM of real-scale structures. However, it still requires a significant challenge for practical applications to compensate unknown environmental effects and to extract only damage features from impedance signals. In this study, the impedance-based SHM was carried out on a 1/20-scaled model of an Uldolmok current power plant structure under changes in temperature and transverse loadings. Principal component analysis (PCA) was applied using conventional damage index to eliminate principal components sensitive to environmental change. It was found that the proposed PCA-base approach is an effective tool for long-term SHM under significant environmental changes.

A Study on Resonance Properties of a Terahertz Asymmetric Split-Loop Resonator Type Metamaterial for High Quality Factor (테라헤르츠 비대칭 분리고리공진기 메타물질의 높은 품질인자를 위한 공진 특성에 관한 연구)

  • Park, Dae-Jun;Ryu, Han-Cheol
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.11
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    • pp.663-669
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    • 2016
  • A terahertz asymmetric split-loop resonator (ASLR) was analyzed for use in high-sensitivity sensing applications. Its structural asymmetricity induces an asymmetric Fano resonance which has a high quality factor compared to the symmetric eigen-resonance. The variations of the resonant frequency, transmission coefficient, and quality factor of the ASLR in the eigen and Fano resonances are analyzed as a function of its structural asymmetricity. Also, the surface current densities on the ASLR in both resonances are calculated to analyze the main cause of the variations of its transmission characteristics. The surface current of the ASLR in the eigen resonance shows a dipole resonance, which increases the radiation loss and reduces the quality factor. On the other hand, the surface current of the ASLR in the Fano resonance shows a trapped or quadrupole mode which has a low radiation loss. Therefore, the ASLR operated in the Fano resonance has a high quality factor. Terahertz, high-performance filters and high sensitivity sensors can be developed based on our analysis results of the ASLR having a high quality factor. These high-performance devices based on terahertz metamaterials could increase the adoption of terahertz industrial applications.

Maximum Power Point Tracking Method Without Input side Voltage and current Sensor of DC-DC Converter for Thermoelectric Generation (열전발전을 위한 DC-DC Converter의 입력측 전압·전류 센서없는 최대전력점 추적방식)

  • Kim, Tae-Kyung;Park, Dae-Su;Oh, Sung-Chul
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.21 no.3
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    • pp.569-575
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    • 2020
  • Recently, research on renewable energy technologies has come into the spotlight due to rising concerns over the depletion of fossil fuels and greenhouse gas emissions. Demand for portable electronic and wearable devices is increasing, and electronic devices are becoming smaller. Energy harvesting is a technology for overcoming limitations such as battery size and usage time. In this paper, the V-I characteristic curve and internal resistance of thermal electric devices were analyzed, and MPPT control methods were compared. The Perturbation and Observation (P&O) control method is economically inefficient because two sensors are required to measure the voltage and current of a Thermoelectric Generator(TEG). Therefore, this paper proposes a new MPPT control method that tracks MPP using only one sensor for the regulation of the output voltage. The proposed MPPT control method uses the relationship between the output voltage of the load and the duty ratio. Control is done by periodically sampling the output voltage of the DC-DC converter to increase or decrease the duty ratio to find the optimal duty ratio and maintain the MPP. A DC-DC converter was designed using a cascaded boost-buck converter, which has a two-switch topology. The proposed MPPT control method was verified by simulations using PSIM, and the results show that a voltage, current, and power of V=4.2 V, I=2.5 A, and P=10.5 W were obtained at the MPP from the V-I characteristic curve of the TEG.

Photoelectric Properties of PbTe/CuPc Bilayer Thin Films (PbTe/CuPc 이층박막의 광전 특성)

  • Lee, Hea-Yeon;Kang, Young-Soo;Park, Jong-Man;Lee, Jong-Kyu;Jeong, Jung-Hyun
    • Journal of Sensor Science and Technology
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    • v.7 no.1
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    • pp.67-72
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    • 1998
  • The crystallized CuPc and PbTe films are formed by thermal evaporation and pulsed ArF excimer laser ablation. Structural and electrical properties of thin film is observed by XRD and current-voltage(I-V) curves. From XRD analysis, both PbTe and CuPc thin films show a-axis oriented structure. For the measurement of photovoltaic effect, the transverse current-voltage curve of CuPc/Si, PbTe/Si and PbTe/CuPc/Si junctions have been analyzed in the dark and under illumination. The PbTe/CuPc/Si junction exthibits a strong photovoltaic characteristics with short circuit current($J_{sc}$) of $25.46\;mA/cm^{2}$ and open-circuit voltage($V_{oc}$) of 170 mV. Quantum efficiency and power conversion efficiency are calculated to be 15.4% and $3.46{\times}10^{-2}$, respectively. Based on the results of QE and ${\eta}$, the photocurrent process of PbTe/CuPc/Si junction can be explained as following three effective steps; photocarrier generation in the CuPc layer, carrier separation at PbTe/CuPc interface, and finally a transportation of electrons through the PbTe layer.

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Design and Implementation of Wireless Lighting LED Controller using Modbus TCP for a Ship (Modbus TCP를 이용한 선박용 무선 LED 제어기의 설계 및 구현)

  • Jeong, Jeong-Soo;Lee, Sang-Bae
    • Journal of Navigation and Port Research
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    • v.41 no.6
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    • pp.395-400
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    • 2017
  • As a serial communications protocol, Modbus has become a practically standard communication protocol and is now a commonly available means of connecting industrial electronic devices. Therefore, all devices can be connected using the Modbus protocol with the measurement and remote control on ships, buildings, trains, airplanes and more. The existing Modbus that has been used is based on serial communication. Modbus TCP uses Ethernet communication based on TCP / IP which is the most widely used Internet protocol today; so, it is faster than serial communication and can be connected to the Internet of Things. In this paper, we designed an algorithm to control LED lighting in a wireless Wi-Fi environment using the Modbus TCP communication protocol, and designed and implemented a LED controller circuit that can check external environmental factors and control remotely through the integrated management system of a ship. Temperature, humidity, current and illuminance values, which are external environmental factors, are received by the controller through the sensors, and these values are communicated to the ship's integrated management system via the Modbus protocol. The Modbus can be connected to Master devices via TCP communication to monitor temperature, humidity, current, illuminance status and LED output values, and also users can change the RGB value remotely in order to change to the desired color. In addition, in order to confirm the implementation of the controller, we developed a simulated ship management system to monitor the temperature, humidity, current and illumination conditions, and change the LED color of the controller by changing the RGB value remotely.

Current-Voltage and Impedance Characteristics of ZnO-Zn2BiVO6-Co3O4 Varistor with Temperature (ZnO-Zn2BiVO6-Co3O4 바리스터의 전류-전압 및 임피던스의 온도)

  • Hong, Youn Woo;Kim, You Bi;Paik, Jong Hoo;Cho, Jeong Ho;Jeong, Young Hun;Yun, Ji Sun;Park, Woon Ik
    • Journal of Sensor Science and Technology
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    • v.25 no.6
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    • pp.440-446
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    • 2016
  • This study introduces the characteristics of current-voltage (I-V) and impedance variance for $ZnO-Zn_2BiVO_6-Co_3O_4$ (ZZCo), which is sintered at $900^{\circ}C$, according to temperature changes. ZZCo varistor demonstrates dramatic improvement of non-linear coefficient, ${\alpha}=66$, with lower leakage current and higher insulating resistivity than those of ZZ ($ZnO-Zn_2BiVO_6$) from the aspect of I-V curves. While both systems are thermally stable up to $125^{\circ}C$, ZZCo represents a higher grain boundary activation energy with 1.05 eV and 0.94 eV of J-E-T and from IS & MS, respectively, than that of ZZ with 0.73 eV and 0.82 eV of J-E-T and from IS & MS, respectively, in the region above $180^{\circ}C$. It could be attributed to the formation of $V^*_o$(0.41~0.47 eV) as dominant defect in two systems, as well as the defect-induced capacitance increase from 781 pF to 1 nF in accordance with increasing temperature. On the other hand, both the grain boundary capacitances of ZZ and ZZCo are shown to decrease to 357 pF and 349 pF, respectively, while the resistances systems decreased exponentially, in accordance with increasing temperature. So, this paper suggests that the application of newly formed liquid phases as sintering additives in both $Zn_2BiVO_6$ and the ZZCo-based varistors would be helpful in developing commercialized devices such as chips, disk-type ZnO varistors in the future.

Electrical characteristics of Au and Pt diffused silicon $p^{+}-n$ Junction diode (Au와 Pt 확산에 의한 실리콘 $p^{+}-n$ 접합 스위칭다이오드의 전기적 특성)

  • Chung, Kee-Bock;Lee, Jae-Gon;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.5 no.3
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    • pp.101-108
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    • 1996
  • The silicon $p^{+}-n$ junction diodes were fabricated. The fabricated wafers were treated by single or double annealing steps. Single annealing process was performed by diffusion of either Au or Pt into the wafer under the oxygen or nitrogen ambient at $800{\sim}1010^{\circ}C$. Second annealing step involved additional annealing of the single annealed wafer under the oxygen ambient at $800{\sim}1010^{\circ}C$ for one hour. Electrical characteristics of the diodes were investigated to evaluate the effect of the annealing treatments. In the case of single annealing under nitrogen ambient at $1010^{\circ}C$ for one hour, the amount of leakage current of Pt diffused diode was 75 times larger than that of Au diffused one. The optimum processing condition to achieve high speed silicon $p^{+}-n$ junction diodes from this study was obtained when Pt diffused wafer(treated under the nitrogen ambient at $1010^{\circ}C$ for one hour) was secondly annealed in an oxygen ambient at $800^{\circ}C$ for one hour. The resulting leakage current of two step annealed diodes were remarkably reduced to 1/1100 of the single annealed one. The diode characteristics such as recovery time, breakdown voltage, leakage current, and forward voltage were 4ns, 138V, 1.72nA, and 1V, respectively.

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