• The Korean Journal of Ceramics
• /
• 제6권2호
• /
• pp.129-133
• /
• 2000

Boron nitride films were synthesized with $N_2$ion flux of low energy, up to 100 eV, at different substrate temperatures of no heating, 200, 400, 500, and $800^{\circ}C$, respectively. Boron was supplied by e-beam evaporation at the rate of $1.5\AA$/sec. For all the conditions, hexagonal BN (h-BN) phase was mainly synthesized and high resolution transmission electron microscopy (HRTEM) showed that (002) planes of h-BN phase were aligned vertical to the Si substrate. The maximum alignment occurred around $400^{\circ}C$. In addition to major h-BN phase, transmission electron diffraction (TED) rings identified the formation of cubic BN (c-BN) phase. But HRTEM showed no distinct and continuous c-BN layer. These results suggest that c-BN phase may form in a scattered form even when h-BN phase is mainly synthesized under small momentum transfer by bombarding ions, which are not reconciled with the macro compressive stress model for the c-BN formation.

• 한국표면공학회지
• /
• 제43권6호
• /
• pp.266-271
• /
• 2010

Ternary Mo-Cu-N films were deposited on Si wafer substrates with various copper contents by magnetron sputtering method using Mo target and Cu target in $Ar/N_2$ gaseous atmosphere. As increasing $N_2$ pressure, the microstructure of Mo-N films changed from ${\gamma}-Mo_2N$ of (111) having face-centered-cubic (FCC) structure to $\delta$-MoN of (200) having hexagonal structure. Detailed the microstructures of the Mo-Cu-N coatings were studied by X-ray diffraction, scanning electron microscopy and field emission transmission electron microscope. The results indicated that the incorporation of copper into the growing Mo-N coating led to the $Mo_2N$ and MoN crystallites were more well-distributed and refined and the copper existed in grain boundary. Ternary Mo-Cu-N films had a composite microstructure of the nanosized crystal crystalline ${\gamma}-Mo_2N$ and $\delta$-MoN surrounded by amorphous $Cu_3N$ phase.

• 한국세라믹학회지
• /
• 제31권7호
• /
• pp.795-803
• /
• 1994

Ferroelectric BaTiO3 thin film was produced using BaTi-ethoxide sol. This sol was prepared from BaTi-ethoxide by a partial hydrolysis with ammonia as a basic catalyst and ethylene glycol as a chelating agent. BaTiO3 thin film was prepared from three continuous spin-coating layers of the sol on bare Si(100) wafer at 2500 rpm followed by pyrolysis at $700^{\circ}C$ for 30 min. After the heat treatment, the film was 0.200$\pm$0.010 ${\mu}{\textrm}{m}$ thick and its grain size was 0.059 ${\mu}{\textrm}{m}$. On the other hand, electrical properties were measured for BaTiO3 thin film separately prepared on Au-deposited silicon wafer. The dielectric constant and loss of the BaTiO3 thin film at room temperature was 150~160 and 0.04 respectively, which was measured at 10 kHz and oscillation level of 0.1 V. In the measurements of the dielectric properties at high temperatures, it was observed that the capacitance of the thin film increases steeply, while the dielectric loss reaches maximum around 1$25^{\circ}C$, which corresponds a phase transition from tetragonal to cubic BaTiO3.

• 한국세라믹학회지
• /
• 제31권2호
• /
• pp.155-160
• /
• 1994

PZT ceramics substituted by La3+ and Nd3+ were fabricated according to the formula: [Pb1-x(La or Nd)x][Zr0.58Ti0.42]1-x/4$\square$x/4O3(x=0.00, 0.02, 0.05, 0.08, 0.15, 0.20). The crystal structure and microstructure were investigated by XRD and SEM. It was observed that the phase transitions among rhombohedral, tetragonal, and cubic symmetry occured as the substitutional quantity increased. Dielectric constant, dissipation factor and piezoelectric coefficient (d33), of each sample were measured. The dielectric properties were changed as the substitutional quanity of rare earth ion increased. These changes could be explained by crystal structure and compositional fluctuaction. Its d33 was higher at tetragonal region near to phase boundry between rhombohedral and tetragonal, which was explained by reorientation of domain wall.

• 한국화재소방학회논문지
• /
• 제11권4호
• /
• pp.3-14
• /
• 1997

The smoke filling process for the atrium space containing a fire source is simulated using two types of deterministic fire model : Zone model and Field model. The zone model used is the CFAST(version 1.6) model developed at the Building and Fire Research Laboratories, NIST in the USA. The field model is a self-developed frie field model based on Computational Fluid Dynamic (CFD) theories. This article is focused on finding out the smoke movement and temperature distribution in atrium space which is cubic in shape. For solving the liked set of velocity and pressure equation, the PISO algorithm, which strengthened the velocity-pressure coupling, was used. Since PISO algorithm is a time-marching procedure, computing time si very fast. A computational procedure for predicting velocity and temperature distribution in fire-induced flow is based on the solution, in finite volume method and non-staggered grid system, of 3-dimensional equations for the conservation of mass, momentum, energy, species and so forth. The fire model i.e Zone model and Field model predicted similar results for clear heights and the smoke layer temperature.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1996년도 하계학술대회 논문집 C
• /
• pp.1645-1647
• /
• 1996

Polycrystalline CdTe thin films -have been studied for photovoltaic application because of their high absorption coefficient and optimal band gap energy (1.54 eV) for solar energy conversion. In this study, we prepared CdTe films using RF-magnetron sputtering method and investigated structural, optical and electrical properties with spectrophotometer, XRD, EDX, and resistivity meter. CdTe films at $200\;^{\circ}C$ showed a mixture of zinc blend (Cubic) and wurtzite (hexagonal) phase. On the other hand, the films at $400\;^{\circ}C$ showed highly oriented structure having hexagonal structure. The resistivity of CdTe films deposited on $SiO_2$ substrates was about $10_7\;{\Omega}cm$. The value of resistivity decreased with the increase of the substrate temperature. CdTe were sputtered on CdS thin films prepared by chemical bath deposition for the formation of the heterojunction. I-V characteristics of these cells were measured at a light density of $100mw/cm^2$, AM. 1.0. The present thin film solar cells showed a conversion efficiency of about 5%.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.326-326
• /
• 2012

ZnS를 합성하는 방법 중 thioacetamide (TAA)를 녹인 물에 ZnO template를 넣어서 황화시키는 방법이 있다. 이 방법은 실험과정이 간편할 뿐만 아니라 그 반응양의 조절도 용이해 ZnS-ZnO core-shell 구조나 ZnS hollow 구조 등을 만드는데 널리 사용되고 있다. 그러나 다양한 형태의 ZnS 구조체 합성에 관한 연구는 활발한 반면, ZnS의 상형성 과정이나 구조 변화와 같은 ZnO의 황화 과정 기구에 관한 연구는 매우 미비한 실정이다. ZnS는 기본적으로 저온에서는 cubic sphalerite 구조를, 고온에서는 hexagonal wurtzite 구조를 안정상으로 가진다. 또한, 8H나 15R 등과 같은 다양한 polytype 구조도 존재한다. 그러나 다양한 구조에서 비슷한 면간거리가 존재하기 때문에 결정구조의 분석이 어려운 실정이다. 이러한 비슷한 면간거리를 가지는 ZnS 등의 결정구조 분석에 있어 원자배열을 직접적으로 관찰할 수 있는 투과전자현미경 (TEM, transmission electron microscopye)을 이용한 연구는 큰 강점을 가진다. 본 연구에서는 다공성 ZnO 막을 황화시켜 형성된 ZnS 막의 미세구조 특성을 분석하였다. 다공성 ZnO 막은 패턴된 Si (111) 기판 위에 스핀코팅법을 이용하여 4,000 rpm의 속도로 증착되었으며 ZnO 결정화를 위해 150 도와 500도에서 각각 drying과 후열처리를 수행하였다. 이렇게 만들어진 ZnO 막을 TAA를 녹인 물에 넣어 48 시간 동안 반응시켰고 최종적으로 ZnS 막을 생성하였다. 다공성 ZnS 막의 미세구조를 분석하기 위해 주사전자현미경 (SEM, scanning electron microscope), X-선 회절분석기 (XRD, x-ray diffractometer), 그리고 투과전자현미경을 이용하였으며, 정확한 결정구조 분석을 위하여 결정구조 시뮬레이션을 병행하였다.

• 대한화학회지
• /
• 제36권1호
• /
• pp.51-56
• /
• 1992

페로브스카이트구조를 갖는 $Pb(Zr_{1-y}Ti_y)O_3$ (PZT)계의 $Pb^{2+}$ 위치에 $Nd^{3+}$ 이온을 치환시키면서 그 결정구조와 결합특성을 X-선 회절분석법 및 적외선 분광광도법으로 알아보았으며, 이런 구조변화가 (Pb1-xNdx)(Zr1-yTiy)O3 (PNZT)계의 전기적 및 광학적 특성에 미치는 영향에 대하여 조사하였다. $Pb^{2+}$ 이온이 $Nd^{3+}$ 이온으로 치환될수록 정방성이 감소하며, 8${\sim}$12 mol% 치환되었을 때 입방정계의 구조이다. 결정내의 결합강도는 입방정게의 구조일 때 가장 강하고 높은 투광도를 나타냈으며, PNZT계 화합물이 투광도를 나타내는 것은 전자의 전하-이동 전이에 의한 것으로 생각된다.

• 대한화학회지
• /
• 제34권6호
• /
• pp.527-533
• /
• 1990

AgI(80 mol%)를 기질로 하여 AgBr 15 mol% + CuI 5mol%, AgBr 10 mol% + CuI 10mol%, AgBr 5 mol% + CuI 5mol%의 계를 제조하여 이들의 이온 전도성을 상온에서 200$^{\circ}C$까지 임피던스분석기(impedance analyzer)를 이용하여 측정한다. 이 온도영역에서 활성화에너지는 0.6∼0.7 eV를 얻을 수 있었으며, 5 mol% AgBr계의 이온 전도성이 가장 컸으며 활성화에너지는 가장 작음을 보였다.

• Journal of Mechanical Science and Technology
• /
• 제20권6호
• /
• pp.819-827
• /
• 2006

The stress-strain relation of aluminum (Al) alloy foam cell wall was evaluated by the instrumented sharp indentation method. The indentation in a few micron ranges was performed on the cell wall of Al-alloy foam having a composition or Al-3wt.%Si-2wt.%Cu-2wt.%Mg as well as its precursor (material prior to foaming). To extract the stress-stram relation in terms of yield stress ${\sigma}_y$, strain hardening exponent n and elastic modulus E, the closed-form dimensionless relationships between load-indentation depth curve and elasto-plastic property were used. The tensile properties of precursor material of Al-alloy foam were also measured independently by uni-axial tensile test. In order to verify the validity of the extracted stress-strain relation, it was compared with the results of tensile test and finite element (FE) analysis. A modified cubic-spherical lattice model was proposed to analyze the compressive behavior of the Al-alloy foam. The material parameters extracted by the instrumented nanoindentation method allowed the model to predict the compressive behavior of the Al-alloy foam accurately.