• Proceedings of the KWS Conference
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• 2006.10a
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• pp.181-183
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• 2006

This paper studies the mechanical behaviors of Sn-3.5Ag solder joint against substrate(such as Au/Ni/Cu, Au/cu, Ni/Cu and Cu pad) after induction heating, a new soldering method. It was found that the solder bump formation depends on the time and current of the induction heating system. Also the heating value of the solder bump were found to vary with respect to the thermal conductivity of the pads on the substrate. In case of Au/Ni/Cu pad and Au/Cu pad, solder bump's shear strength were high for the heating time of $1.5{\sim}2sec$. For Ni/Cu pad, solder bump's shear strength were found to increase with time increment.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.33-37
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• 2002

본 연구에서는 전해도금법을 이용하여 플립칩용 Ni, Ni-Cu 합금 UBM (Under Bump Metallurgy) 및 Sn-Ag 무연 솔더 범프를 형성하였다. 솔더 범프의 전해도금시 고속도금 방법으로 균일한 범프 높이를 갖도록 하는 도금 조건 및 도금 기판의 역할로서의 UBM의 영향을 조사하였다. Cu/Ni-Cu 합금/Cu UBM을 적용한 경우 음극시편의 전극 접점수를 증가시켰을 때 비교적 균일한 솔더 범프를 형성시킬 수 있었던 반면, Ni UBM의 경우는 접점수를 증가시켜도 다소 불균일한 솔더 범프를 형성하였다. 리플로 시간을 변화하여 범프 전단 강도 및 파단 특성을 조사하였는데 Ni UBM의 경우 Cu/Ni-Cu 합금/Cu UBM에 비해 전단강도가 다소 낮은 값을 가졌고 금속막이 웨이퍼에서 분리되는 파괴 거동이 관찰되었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.42.1-42.1
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• 2011

높은 광흡수 계수를 갖는Cu(In,Ga) $Se_2$ (CIGS) 화합물 박막 소재는 고효율 태양전지 양산을 위해 가장 전도유망한 재료이나 상대적으로 매장량이 적은 In 및 Ga을 사용한다는 소재적 한계가 있다. $Cu_2ZnSnSe_4$ (CZTSe) 혹은 $Cu_2ZnSnS_4$(CZTS)와 같은 Cu-Zn-Sn-Se계 화합물 반도체는 CIGS 내 희소원소인 In과 Ga이 범용원소인 Zn 및 Sn으로 대체된 소재로써 미래형 저가 태양전지 개발을 위해 활발히 연구되고 있는데, 그 화합물 조합에 따라 0.8 eV부터 1.5 eV까지의 에너지 밴드갭을 갖는 것으로 알려져 있다. 스퍼터링법에 기반한 2단계 공정에 의해 3.2%의 CZTSe 및 6.7%의 CZTS 태양전지 효율 달성이 보고된 바 있으며, 최근 비진공 방식을 이용하여 제조된 $Cu_2ZnSn(S,Se)_4$ (CZTSSe) 태양전지가 9.6%의 변환효율을 생산하여 세계 최고기록을 갱신한 바 있다. 반면, 동시진공증발법에 의한 Cu-Zn-Sn-Se계 연구는 박막 조성 조절이 상대적으로 용이하다는 장점에도 불구하고, 상대적으로 공개된 연구결과의 양이 적으며 그 효율에 대한 보고는 특히 미미하다. 본 연구에서는 동시진공증발법에 의한 CZTSe 박막 연구 결과를 바탕으로 Sn 손실을 최소화하기 위한 진공증발 공정을 최적화하였으며, 이를 통해 CZTSe 박막 태양전지를 제조하고 그 특성분석을 통해 5% 이상의 변환효율을 달성하였다.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.2 s.43
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• pp.35-40
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• 2007

The pull strength and fracture mechanism were investigated to evaluate the reliability and compatibility of Sn-8Zn-3Bi joints, the solder paste on lead and lead-free plating under thermal shock conditions. At the Sn-8Zn-3Bi solder joint, no crack initiation was observed during thermal shock test. After 1000 cycles, the strength of the solder joint decreased not sharply but reduced gradually compared with initial conditions. The decrement of strength was affected by ${\gamma}-Cu_5Zn_8$ IMC growth which caused the IMC fracture on the fracture surface and a change in fracture mode and initial crack point. Clearly, the Sn-8Zn-3Bi solder shows good reliability properties and compatibility with lead-free plated Cu LF under thermal shock temperatures between 248K and 423K.

• Journal of the Korean Magnetics Society
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• v.1 no.2
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• pp.15-21
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• 1991

The magnetic properties of the $Y_{1}Ba_{2}Cu_{3-x}Sn_{x}O_{7-y}$ superconductor were studied as a function of Sn concentration by utilizing both the vibrating sample magnetometer (VSM) and torque magnetometer. Unlike the cases where Fe and Co were substituted for Cu, the superconducting transition temperature was maintained above 90 K until x reached the value of 0.36. The lower critical field $H_{c1}(T)$ and upper critical field $H_{c2}(T)$ are measured as a function of temperature and external magnetic field, respectively. By aid of these results, $H_{c1}(0)$.($H_{c2}(0)$), the coherence length ${\varepsilon}_{0}$, the penetration depth ${\lambda}_{0}$, and the Ginzburg-Landau parameter k were oqtained. Flux pinning was also observed in the sample.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.66-66
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• 2009

Various alloy system, such as Cu-Sn-Ti, Cu-Ag-Ti, and Ni-B-Cr-based alloy are used for the brazing of diamond grits. However, the problem of the adhesion strength between the diamond grits and the brazed alloy is presented. The adhesion strength between the diamond grits and the melting filler alloy is predicted by the contact angle, thereby, instead of diamond grit, the study on the wettability between the graphite and the brazing alloy has been indirectly executed. In this study, Cu-13Sn-12Ti filler alloy was manufactured, and the contact angles, the shear strengths and the interfacial area between the graphites(diamond grits) and braze matrix were investigated. The contact angle was decreased on increasing holding time and temperature. The results of shear strength of the graphite joints brazed filler alloys were observed that the joints applied Cu-13Sn-12Ti alloy at brazing temperature 940 $^{\circ}C$ was very sound condition indicating the shear tensile value of 23.8 MPa because of existing the widest carbide(TiC) reaction layers. The micrograph of wettability of the diamond grit brazed filler alloys were observed that the brazement applied Cu-13Sn-12Ti alloy at brazing temperature $990^{\circ}C$ was very sound condition because of existing a few TiC grains in the vicinity of the TiC layers.

• Journal of Welding and Joining
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• v.28 no.3
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• pp.49-58
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• 2010

Various alloy system, such as Cu-Sn-Ti, Cu-Ag-Ti, and Ni-B-Cr-based alloy are used for the brazing of diamond grits. However, the problem of the adhesion strength between the diamond grits and the brazed alloy is presented. The adhesion strength between the diamond grits and the melting filler alloy is predicted by the contact angle, thereby, instead of diamond grit, the study on the wettability between the graphite and the brazing alloy has been indirectly executed. In this study, Cu-13Sn-12Ti filler alloy was manufactured, and the contact angles, the shear strengths and the interfacial area between the graphites (diamond grits) and braze matrix were investigated. The contact angle was decreased on increasing holding time and temperature. The results of shear strength of the graphite joints brazed filler alloys were observed that the joints applied Cu-13Sn-12Ti alloy at brazing temperature $940^{\circ}C$ was very sound condition indicating the shear tensile value of 23.8 MPa because of existing the widest carbide(TiC) reaction layers. The micrograph of wettability of the diamond grit brazed filler alloys were observed that the brazement applied Cu-13Sn-12Ti alloy at brazing temperature $990^{\circ}C$ was very sound condition because of existing a few TiC grains in the vicinity of the TiC layers.

• Journal of the Korean Society for Heat Treatment
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• v.26 no.5
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• pp.225-232
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• 2013

The influence of aging treatment, addition elements and rolling reduction ratio on the microstructure, mechanical, electrical and bendability properties of Cu-Ni-Si-P-x (x = Fe, Sn, Zn) alloys for connector material application was investigated. SEM/EDS analysis exhibited that Ni2-Si precipitates with a size of 20~100 nm were distributed in grains. Fe, Sn, Zn elemnets in Cu-Ni-Si-P alloy imporved the mechanical strength but it was not favor in increasing of electrical conductivity. As higher final rolling reduction ratio, the strength and electrical conductivity is increased after aging treatment, but it indicated excellent bendability. Especially, Cu-2Ni-0.4Si-0.5Sn-0.1Fe-0.03P alloy show the tensile strength value of 700MPa and the electrical conductivity was observed to reach a maximum of 40%IACS. It is optimal for lead frame and connector.

• Journal of the Korean institute of surface engineering
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• v.44 no.5
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• pp.185-189
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• 2011

$Cu_2ZnSnSe_4$ thin films for solar absorber application were prepared by pulsed laser deposition of a synthesized $Cu_2ZnSnSe_4$ compound target. The film's composition revealed that the deposited films possess an identical composition with the target material. Further film compositional control toward a stoichiometric composition was performed by optimizing substrate temperature, deposition time and target rotational speed. At the optimum condition, X-ray diffraction patterns of films showed that the films demonstrated polycrystalline stannite single phase with a high degree of (112) preferred orientation. The absorption coefficient of $Cu_2ZnSnSe_4$ thin films were above 104 cm.1 with a band gap of 1.45 eV. At an optimum condition, films were identified as a p type semiconductor characteristic with a resistivity as low as $10^{-1}{\Omega}cm$ and a carrier concentration in the order of $10^{17}cm^{-3}$.

• Korean Journal of Materials Research
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• v.20 no.2
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• pp.65-71
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• 2010

In this study, the effect of Sn and Mg on microstructure and mechanical properties of Cu-Fe-P alloy were investigated by using scanning electron microscope, transmission electron microscope, tensile strength, electrical conductivity, thermal softening, size and distribution of the precipitation phases in order to satisfy characteristic for lead frame material. It was observed that Cu-0.14wt%Fe-0.03wt%P-0.05wt%Si-0.1wt%Zn with Sn and Mg indicates increasing tensile strength compare with PMC90 since Sn restrained the growth of the Fe-P precipitation phase on the matrix. However, the electrical conductivity was decreased by adding addition of Sn and Mg because Sn was dispersed on the matrix and restrained the growth of the Fe-P precipitation. The size of 100 nm $Mg_3P_2$ precipitation phase was observed having lattice parameter $a:12.01{\AA}$ such that [111] zone axis. According to the results of the study, the tensile strength and the electrical conductivity satisfied the requirements of lead frame; so, there is the possibility of application as a substitution material for lead frame of Cu alloy.