• Proceedings of the KWS Conference
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• 2002.10a
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• pp.487-492
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• 2002

The growth kinetics of intermetallic compound layers formed between eutectic Sn-58Bi solder and (Cu, electroless Ni-P/Cu) substrate were investigated at temperature between 70 and 120 C for 1 to 60 days. The layer growth of intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P system satisfied the parabolic law at given temperature range. As a whole, because the values of time exponent (n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energies of Cu$_{6}$Sn$_{5}$ and Ni$_3$Sn$_4$ intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P were 127.9 and 81.6 kJ/mol, respectively.ely.

• Journal of the Korean institute of surface engineering
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• v.22 no.2
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• pp.47-54
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• 1989

The effects of intermetallic compound growt on the sheet resistance and soldreability as functions of the aging time, the temperature, and the conditions of substrates have been investi-gated in the electroplallic compound (mainy Cu6Sn5and Ni3Sn4) and the number of phase interface increased, the sheet resistance increased. Spread tests showed that the solderability was dereased with the intermetallic compounds growth and increased with the thickness of electroplated Sn. The surface morphology or agin size of the compound layer singificantly affect the solderability. The solderability of Sn/Ni system was superiot to Sn/Ni system was sperior to that of Sn/Cu system and the intermetallic compounds growth was solwer in the former system.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1472-1474
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• 1997

In this study, the $Nb_3Sn$ wire was tried to fabricate by internal tin process to investigate the relationship between the processing parameters in a cold working and the microstructure. The critical current densities of $Nb_3Sn$ wires were evaluated in magnetic fields at 4.2 K. $Nb_3Sn$ compound layer was found to be formed between Nb core and Cu-Sn. The Cu part in the wire transformed to Cu-Sn by the reaction with Sn and the Sn in the Cu-Sn part reacted with Nb.

• Korean Journal of Metals and Materials
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• v.48 no.6
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• pp.557-564
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• 2010

Formation of Sn through-silicon-via (TSV) and its interconnection processes were studied in order to form a three-dimensional interconnection structure of chip-stack packages. Different from the conventional formation of Cu TSVs, which require a complicated Cu electroplating process, Sn TSVs can be formed easily by Sn electroplating and reflow. Sn via-filling behavior did not depend on the shape of the Sn electroplated layer, allowing a much wider process window for the formation of Sn TSVs compared to the conventional Cu TSV process. Interlocking joints were processed by intercalation of Cu bumps into Sn vias to form interconnections between chips with Sn TSVs, and the mechanical integrity of the interlocking joints was evaluated with a die shear test.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.218-220
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• 2006

Sn-3.0Ag-0.5Cu solder is widely used as micro-joining materials of flip chip package(FCP) because of the fact that it causes less dissolution and has good thermal fatigue property. However, compared with ternary electroplating in the manufacturing process, binary electroplating is still used in industrial field because of easy to make plating solution and composition control. The objective of this research is to fabricate Sn-3.0Ag-0.5Cu solder bumping having accurate composition. The ternary Sn-3.0Ag-0.5Cu solder bumping could be made on a Cu pad by sequent binary electroplating of Sn-Cu and Sn-Ag. Composition of the solder was estimated by EDS and ICP-OES. The thickness of the bump was measured using SEM and the microstructure of intermetallic-compounds(IMCs) was observed by SEM and EDS. From the results, contents of Ag and CU found to be at $2.7{\pm}0.3wt%\;and\;0.4{\pm}0.1wt%$, respectively.

• Advances in materials Research
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• v.13 no.1
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• pp.55-62
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• 2024

Cu-based sulfides have recently emerged as promising thermoelectric (TE) materials due to their low cost, non-toxicity, and abundance. In this research, point defect structure of Cu_2-xZnSnS₄ (x=0.1, 0.2, 0.3) samples were synthesized by the mechanical alloying method. Mixed powders of Cu, Zn, Sn and S were milled using high energy ball milling at a rotation speed of 300 rpm in Ar atmosphere. The milled Cu_2-xZnSnS₄ powders were heat-treated at 723 K for 24 h, and subsequently consolidated using spark plasma sintering (SPS) under an applied pressure of 60 MPa for 15 min. The thermal conductivity of the sintered Cu_2-xZnSnS₄ samples was evaluated. A well-defined Cu_2-xZnSnS₄ powders were successfully formed after milling for 16 h, with the particle sizes mostly distributed in the range of 60-100 nm. The lattice constants of aand cdecreased with increasing composition value x. The thermal conductivity of sintered x=0.1 sample exhibited the lowest value and attained 0.93 W/m K at 673 K.

• Journal of the Korean Ceramic Society
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• v.46 no.4
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• pp.429-435
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• 2009

In this study, we investigated microstructure and the CO gas sensing properties of Ag-CuO-$SnO_2$ thin films prepared by co-evaporation and subsequently thermal oxidation at air atmosphere. The sensitivity of a Cu-Sn films, thermally oxidized at $600^{\circ}C$, is strongly affected by the amount of Cu. At Cu:7 wt%-Sn:93 wt%, the film exhibited a maximum sensitivity of ${\sim}2.3$ to CO gas of 1000 ppm at $300^{\circ}C$. In contrast, the sensitivity of a Sn-Ag film did not change significantly with the amount of Ag. An enhanced sensitivity of ${\sim}3.7$ was observed in the film with a composition of Ag:3 wt%-Cu:4 wt%-Sn:93 wt%, when thermally oxidized at $600^{\circ}C$. In addition, this thin film shows a response time of ${\sim}80$ sec and a recovery time of ${\sim}450$ sec to 1000 ppm CO gas. The results demonstrate that the CO sensitivity of the Ag-CuO-$SnO_2$ thin films may be closely associated with coexistence of $SnO_2$ and SnO phase, decrease in average particle size, and a porous microstructure. We also suggest that co-evaporation and followed by thermal oxidation is a very simple and effective method to prepare oxide gas sensor thin films.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.301-306
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• 2005

Aging characteristics of newly developed Sn-1.8Bi-0.7Cu-0.6In solder was evaluated by shear strength and microstructure. Stencil printing was applied to form solder. The shear strength of Sn-1.8Bi-0.7Cu-0.6In at $150^{\circ}C$ showed the highest values through aging. Intermetallic compounds formed on the interface between solder and Au/Cu/Ni/Al UBM were $(Cu,\;Ni)_6Sn_5$ Furthermore, it was found that Spatting of Intermetallic compounds started before 500h aging at $150^{\circ}C$.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.807-812
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• 1998

Interfacial reaction and mechanical properties between Sn-Bi-X ternary alloys(X : 2Cu. 2Sb 5In) and Cu-substrate were studied. Cu/solder joints were subjected to aging treatments for up to 60days to see interfacial reaction at $100^{\circ}C$ and then were examined changes of microstructure and interfacial compound by optical microscopy, SEM and EDS. Cu/solder joints were aged to 30days and then loaded to failure at cross head speed of 0.3mm $\textrm{min}^{-1}$ to measure strength and elongation. According to the result of EDS, it is supposed that the soldered interfacial zone was composed of $\textrm{Cu}_{3}\textrm{Sn}$ and $\textrm{Cu}_{6}\textrm{Sn}_{5}$. According to the tensile test of Cu/solder joint, joint strength was decreased by aging treatment. Fractographs of Cu/Sn-Bi solder detailed the effect of aging on fracture behavior. When intermetallic was thin, the fracture occurred through the solder. But as the interfacial intermetallic is thickened, the fracture propagated along the intermetallic/solder interface.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.89-98
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• 2001

Pb-free wave soldering process of AC Adapter was implemented by six sigma method using Sn-Cu-Ni type solder. The solder joint appearance, microstructural change, a lift-off phenomenon and reliability were evaluated through thermal shock teal. $(Cu,Ni)_6Sn_5$-type intermetallic compound of which thickness is about 5 micron was found at solder joint between Sn-Cu-Ni solder and copper land. After applying the thermal shock test of as-soldered product up to 750 cycles, no crack was found at the solder joint and the newly developed product was superior to conventions; one in terms of productivity and reliability.