• Current Photovoltaic Research
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• v.3 no.4
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• pp.135-139
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• 2015

$Cu_2SnS_3$ (CTS) based thin film solar cells (TFSCs) are of great interest because of its earth abundant, low-toxic and eco-friendly material with high optical absorption coefficient of $10^4cm^{-1}$. In this study, the DC sputtered precursor thin films have been sulfurized using rapid thermal annealing (RTA) system in the graphite box under Ar gas atmosphere for 10 minute. The systematic variation of sulfur powder during annealing process has been carried out and their effects on the structural, morphological and optical properties of CTS thin films have been investigated. The preliminary power conversion efficiency of 1.47% with a short circuit current density of $33.9mA/cm^2$, an open circuit voltage of 159.7 mV, and a fill factor of 27% were obtained for CTS thin film annealed with 0.05g of S powder, although the processing parameter s have not yet been optimized.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.9
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• pp.1641-1647
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• 2006

A dual micro gas sensor way for detecting reducing gas and bad order was fabricated using nano sized $SnO_2$ thin film fabrication method. To make nano-sized thin gas sensitive $SnO_2$ thin rilm, thin tin metal layer $2500{\AA}$ thick was oxidized between 600 and $800^{\circ}C$ by thermal oxidation. The gas sensing layers such as $SnO_2,\;SnO_2(+Pt)\;and\;SnO_2(+CuO)$ were patterned by metal shadow mask for simple fabrication process on the silicon substrate. The micro gas sensors with $SnO_2(Pt)$ and $SnO_2(+CuO)$ showed good selectivity to CO gas among reducing gases and good sensitivity to $H_2S$ that is main component of bad odor, separately.

• Journal of the Korean Solar Energy Society
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• v.25 no.4
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• pp.1-11
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• 2005

The stoichiometric mixture of evaporating materials for the $CuInSe_2$ single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuInSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.783\;{\AA}$ and $11.621\;{\AA}$, respectively. To obtain the $CuInSe_2$ single crystal thin film, $CuInSe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the HWE(Hot Wall Epitaxy) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$ respectively. The crystalline structure of $CuInSe_2$ single crystal thin film was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.1851\;eV-(8.99{\times}10^{-4}\;eV/K)T^2/(T+153\;K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $n-CdS/p-CuGaSe_2$ heterojunction solar cells under $80\;mW/cm^2$ illumination were found to be 0.51V, $29.3\;mA/cm^2$, 0.76 and 14.3 %, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.376-381
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• 2019

In this work, we evaluated the structural, electrical and optical properties of $Ge_8Sb_2Te_{11}$ and Cu-doped $Ge_8Sb_2Te_{11}$ thin films prepared by rf-magnetron reactive sputtering. The 200-nm-thick deposited films were annealed in a range of $100{\sim}400^{\circ}C$ using a furnace in an $N_2$ atmosphere. The amorphous-to-crystalline phase changes of the thin films were investigated by X-ray diffraction (XRD), UV-Vis-IR spectrophotometry, a 4-point probe, and a source meter. A one-step phase transformation from amorphous to face-centered-cubic (fcc) and an increase of the crystallization temperature ($T_c$) was observed in the Cu-doped film, which indicates an enhanced thermal stability in the amorphous state. The difference in the optical energy band gap ($E_{op}$) between the amorphous and crystalline phases was relatively large, approximately 0.38~0.41 eV, which is beneficial for reducing the noise in the memory devices. The sheet resistance($R_s$) of the amorphous phase in the Cu-doped film was about 1.5 orders larger than that in undoped film. A large $R_s$ in the amorphous phase will reduce the programming current in the memory device. An increase of threshold voltage ($V_{th}$) was seen in the Cu-doped film, which implied a high thermal efficiency. This suggests that the Cu-doped $Ge_8Sb_2Te_{11}$ thin film is a good candidate for PRAM.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.83-83
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• 2003

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.62$\times$10$^{16}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10 K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 7 meV and 5.9 meV, respectivity. By Haynes rule, an activation energy of impurity was 59 meV.

• Korean Journal of Crystallography
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• v.11 no.3
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• pp.137-146
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• 2000

The stoichiometric mix of evaporating materials for he CuInS₂ single crystal thin films was prepared. To obtain the single crystal thin films, CuINS₂ mixed crystal was deposited on etched semi-insulator GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperature were 640℃ and 430℃, respectively and the thickness of the single crystal thin films was 2 ㎛. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility deduced from Hall data are 9.64x10/sup 22//㎥ and 2.95x10/sup -2/ ㎡/V·s, respectively at 293 K. he optical energy gap was found to be 1.53 eV at room temperature. From the photocurrent spectrum obtained by illuminating perpendicular light on the c-axis of the thin film, we have found that the values of spin orbit coupling splitting ΔSo and the crystal field splitting ΔCr were 0.0211 eV and 0.0045 eV at 10K, respectively. From PL peaks measured at 10K, were can assign the 807.7 nm (1.5350 eV) peak to E/sub x/ peak of the free exciton emission, the 810.3 nm(1.5301 eV) peak to I₂ peak of donar-bound exciton emission and the 815.6 nm(1.5201 eV) peak to I₁ peak of acceptor-bound excition emission. In addition, the peak observed at 862.0 nm(1.4383 eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.51.1-51.1
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• 2010

이번 연구에서는 저온 용액공정을 이용하여p-type 반도체로 많이 사용되고 있는 $Cu_xS$를 기판 위에 증착하여 그 특성을 분석하였다. $Cu_xS$는 x의 값에 따라 다섯가지의 결정구조를 가지는데 CuS, $Cu_{1.75}S$, $Cu_{1.8}S$, $Cu_{1.95}S$, $Cu_2S$ 들이 그것이다. 태양전지에서 p형 반도체로 중요한 역할을 담당하고 있는 $Cu_xS$는 cell에서 사용되었을 때 energy bandgap이 1.2-2.5eV일 때 가장 좋은 특성을 나타낸다. 이번 연구에서는 특히 조성에 따라서 물리적, 광학적으로 어떤 특성을 나타내는지에 대하여 XRD, SEM, Uv-vis 등의 분석을 해보았다. XRD의 경우 농도가 높아질수록 peak의 intensity는 커지지만 어느 농도 이상부터는 Cu가 Oxide화 되는 것을 관찰할 수 있었다. SEM image의 경우에는 조성에 따른 포면의 상태를 분석해보았다. 조성에 따른energy bandgap을 알아보기 위해서는 Uv-vis을 측정하였으며 이를 이용하여 증착된 박막의 투과도 역시 함께 분석해보았다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.109-112
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• 1995

CuInS$_2$thin film was prepared by heat treatment at vacuum 10$\^$-3/ Torr of S/In/Cu stacked layer which was deposited by sequential. And so, the polycrystalline CuInS$_2$with chalcopyrite structure was well made at heat treatment temperature of 250$^{\circ}C$ and heat treatment time of 60 min. Single phase of CuInS$_2$was formed from Cu/In composition ratio of 0.84 to 1.3. p conduction type of CuInS$_2$thin film was appeared from Cu/In competition ratio of 0.99. The highest resistivity of CuInS$_2$with p type was 1.608${\times}$10$^2$$\Omega$cm at Cu/In composition ratio of 0.99 and The lowest resistivity was 5.587${\times}$10$\^$-2/$\Omega$cm at Cu/In composition ratio of 1.3.

• Applied Microscopy
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• v.45 no.4
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• pp.195-198
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• 2015

Gas-assisted etching (GAE) with focused ion beam (FIB) was applied to prepare plan-view specimens of Cu thin-layer on a silicon substrate for transmission electron microscopy (TEM). GAE using $XeF_2$ gas selectively etched the silicon substrate without volume loss of the Cu thin-layer. The plan-view specimen of the Cu thin film prepared by FIB milling with GAE was observed by scanning electron microscopy and $C_S$-corrected high-resolution TEM to estimate the size and microstructure of the TEM specimen. The GAE with FIB technique overcame various artifacts of conventional FIB milling technique such as bending, shrinking and non-uniform thickness of the TEM specimens. The Cu thin film was uniform in thickness and relatively larger in size despite of the thickness of <200 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.350-356
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• 2005

We report the space charge and the surface potential of the interface between metal and copper(Ⅱ)-phthalocyanine(CuPc) thin films by measuring the microwave reflection coefficients S/sub 11/ of thin films using a near-field scanning microwave microscope(NSMM). CuPc thin films were prepared on Au and Al thin films using a thermal evaporation method. Two kinds of CuPc thin films were prepared by different substrate heating conditions; one was deposited on preheated substrate at 150。C and the other was annealed after deposition. The microwave reflection coefficients S/sub 11/ of CuPc thin films were changed by the dependence on grain alignment due to heat treatment conditions and depended on thickness of CuPc thin films. Electrical conductivity of interface between metal and organic CuPc was changed by the space charge of the interface. By comparing reflection coefficient S/sub 11/ we observed the electrical conductivity changes of CuPc thin films by the changes of surface potential and space charge at the interface.