Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Properties of CuInS$_2$Ratio

Cu/In 성분비에 따른 CuInS$_2$박막의 전기적 특성

  • Park, Gye-Choon (Department of Electrical Engineering, Mokpo University) ;
  • Jeong, Woo-Seong (Department of Electrical Engineering, Mokpo University) ;
  • Chang, Young-Hak (Department of Electrical Engineering, Mokpo University) ;
  • Lee, Jin (Department of Electrical Engineering, Mokpo University) ;
  • Jeong, Hae-Duck (Department of Electrical Engineering, Mokpo University)
  • 박계춘 (목포대학교 전기공학과) ;
  • 정우성 (목포대학교 전기공학과) ;
  • 장영학 (목포대학교 전기공학과) ;
  • 이진 (목포대학교 전기공학과) ;
  • 정해덕 (목포대학교 전기공학과)
  • Published : 1995.11.01
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Abstract

CuInS$_2$thin film was prepared by heat treatment at vacuum 10$\^$-3/ Torr of S/In/Cu stacked layer which was deposited by sequential. And so, the polycrystalline CuInS$_2$with chalcopyrite structure was well made at heat treatment temperature of 250$^{\circ}C$ and heat treatment time of 60 min. Single phase of CuInS$_2$was formed from Cu/In composition ratio of 0.84 to 1.3. p conduction type of CuInS$_2$thin film was appeared from Cu/In competition ratio of 0.99. The highest resistivity of CuInS$_2$with p type was 1.608${\times}$10$^2$$\Omega$cm at Cu/In composition ratio of 0.99 and The lowest resistivity was 5.587${\times}$10$\^$-2/$\Omega$cm at Cu/In composition ratio of 1.3.

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