• Journal of the Korean Society for Heat Treatment
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• v.36 no.3
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• pp.115-120
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• 2023

ZnO/Cu/ZnO (ZCZ) thin film deposited on the glass substrate with DC and RF magnetron sputtering was rapid thermal annealed (RTA) and then effect of thermal temperature on the opto-electical and transparent heater properties of the films were considered. The visible transmittance and electrical resistivity are depends on the annealing temperature. The electrical resistivity decreased from 1.68 × 10^-3 Ωcm to 1.18 × 10^-3 Ωcm and the films annealed at 400℃ show a higher transmittance of 78.5%. In a heat radiation test, when a bias voltage of 20 V is applied to the ZCZ film annealed at 400℃, its steady state temperature is about 70.7℃. In a repetition test, the steady state temperature is reached within 15s for all of the bias voltages.

• Bulletin of the Korean Chemical Society
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• v.35 no.1
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• pp.141-146
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• 2014

A series of bimetallic Cu-Zn/$SiO_2$ catalysts were prepared via thermal decomposition of the as-synthesized $CuZn(OH)_4(H_2SiO_3)_2{\cdot}nH_2O$ hydroxides precursors. This highly dispersed Cu-solid base catalyst is extremely effective for hydrogenation of ethyl acetate to ethanol. The reduction and oxidation features of the precursors prepared by coprecipitation method and catalysts were extensively investigated by TGA, XRD, TPR and $N_2$-adsorption techniques. Catalytic activity by ethyl acetate hydrogenation of reaction temperatures between 120 and $300^{\circ}C$, different catalyst calcination and reduction temperatures, different Cu/Zn loadings have been examined extensively. The relation between the performance for hydrogenation of ethyl acetate and the structure of the Cu-solid base catalysts with Zn loading were discussed. The detected conversion of ethyl acetate reached 81.6% with a 93.8% selectivity of ethanol. This investigation of the Cu-Zn/$SiO_2$ catalyst provides a recently proposed pathway for ethyl acetate hydrogenation reaction to produce ethanol over Cu-solid base catalysts.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.161-164
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• 2001

Transmuted impurity atoms formed in neutron-irradiated ZnO thin films were theoretically identified first and then experimentally confirmed by Photoluminescence (PL). ZnO thin films grown by plasma-assisted molecular beam epitaxy were irradiated by neutron beam at room temperature. Among eight isotropes naturely exiting in ZnO films, only $^{64}Zn$, $^{68}Zn$, $^{70}Zn$ and $^{18}O$ were expected to transmute into $^{65}Cu$, $^{69}Ga$, $^{71}Ga$ and $^{19}F$, respectively. The concentrations of these transmuted atoms were estimated by considering natural abundance, neutron fluence, and neutron cross section. The neutron-irradiated ZnO thin films were characterized by PL. In the PL spectra of these ZnO thin film, the Cu-related PL peaks were seen, but the Ga- or F-associated PL peaks were absent. This observation demonstrates the existence of $^{65}Cu$ in the ZnO. In this paper, emission mechanism of Cu impurities wil1 be described and the reason for the absence of the Ga- or F-associated PL peaks will be discussed.

• Journal of Powder Materials
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• v.11 no.2
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• pp.143-148
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• 2004

In the present study, $TiO_2$ imbedded composite powders have been successfully prepared from the (Cu. Zn)/$TiO_2$ composite salt solution. The composite (Cu, Zn)/$TiO_2$ powders were formed by drying the solution at 200~$600^{\circ}C$ in the hydrogen atmosphere. Photocatalytic characteristics was evaluated by detecting the decomposition ratio of aniline blue with UV-visible spectrophotometer(Shimazu Co., UV-1601). Phase analysis of (Cu, Zn)/$TiO_2$ composite powders was carried out by XRD and DSC, and powder size was measured with TEM. The mean particle size of composite powders was about 100mm. As the reduction temperature increases, a few zinc sulfide and oxide phases was formed and copper oxide phase was reduced. The decomposition ratio of aniline blue was about 80％ under the UV irradiation by the TiO$_2$ phase in the composite (Cu, Zn)/$TiO_2$ powders and similar decomposition ratio of 80％ was obtained at the UV lightless condition by virtue of Cu and Zn compounds.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.503-508
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• 2003

The purpose of this study is to investigate the effect of $V_2$$O_{5}$ addition on the Ag and Cu precipitation in the NiCuZn ferrite layers of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2$$O_{5}$ -doped ferrite pastes. With increasing the $V_2$$O_{5}$ content and sintering temperature, Ag and Cu oxide coprecipitated more and more at the polished surface of ferrite layers during re-annealing at $840^{\circ}C$. It was thought that during the sintering process, V dissolved in the NiCuZn ferrite lattice and the Ag-Cu liquid phase of low melting point was formed in the ferrite layers due to the Cu segregation from the ferrite lattice and Ag diffusion from the internal electrode. During re-annealing at $840^{\circ}C$, the Ag-Cu liquid phase came out the polished surface of ferrite layers, and was decomposed into the isolated Ag particles and the Cu oxide phase during the cooling process.

• Journal of the Korean Applied Science and Technology
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• v.15 no.4
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• pp.79-85
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• 1998

$Cu_xFe_{3-x}O_4$ catalyst and $Zn_xFe_{3-x}O_4$ catalyst were synthesized by the air oxidation method with various C(II) and Zn(II) weights. Activated catalysts decomposed carbon dioxide to carbon at $350^{\circ}C$, $380^{\circ}C$, $410^{\circ}C$ and $440^{\circ}C$. The value of carbon dioxide decomposition rate for $Cu_{0.003}Fe_{2.997}O_4$ and $Zn_{0.003}Fe_{2.997}O_4$ catslysts than was better catalysts. The decomposed rate of the catalysts is about 85%${\sim}$90%. The reaction rate constant(4.00 $psi^{1-{\alpha}}/min$) and activation energy(2.62 kcal/mole) of $Cu_{0.003}Fe_{2.997}O_4$ catalyst are better than $Zn_{0.003}Fe_{2.997}O_4$

• Journal of the Korean Chemical Society
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• v.18 no.3
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• pp.194-201
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• 1974

The tetradentate schiff base ligand, N,N'-bis(salicylaldehyde)-m-phenylenediimine has been prepared from salicylaldehyde and m-phenylenediamine by Duff-reaction. The schiff base ligand has been reacted with Cu(II), Ni(II), Co(II), and Zn(II) to form new complexes; Cu(II)$[C_{20}H_{14}O_2N_2]{\cdot}2H_2O, Ni(II)[C_{20}H_{14}O_2N_2]{\cdot}2H_2O, Co(III)[C_{20}H_{14}O_2N_2]{\cdot}2H_2O and Zn(II)2[C_{20}H_{14}O_2N_2]{\cdot}4H_2O$. It seems to be that the Cu(II), Ni(II) and Co(II) complexes have hexacoordinated configuration with the schiff base and two molecules of water, while Zn(II) complex has tetracoordinated configuration with the schiff base and four molecules of water. The mole ratio of tetradentate schiff base ligand to Cu(II), Ni(II) and Co(II) are 1:1 but to Zn(II) is 1:2. These complexes have been identified by visible spectra, infrared spectra, T.G.A. and elemental analysis.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1427-1429
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• 2003

The $ZnNb_2O_6$ ceramics with 3wt% CuO were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1000^{\circ}C{\sim}1075^{\circ}C$ for 3hr. in air. The structural properties were investigated with sintering temperature by XRD and SEM. Also, the microwave dielectric properties were investigated with sintering temperature. Increasing the sintering temperature, the peak of second phase($Cu_3Nb_2O_8$) was increased. In the case of $ZnNb_2O_6$+CuO(3wt%) ceramics sintered at $1025^{\circ}C$ for 3hr, the dielectric constant, quality factor were 21.73, 19.276, respectively.

• Journal of Powder Materials
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• v.22 no.5
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• pp.331-336
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• 2015

We report on the succesful fabrication of ZnO nanorod (NR)-based robust piezoelectric nanogenerators (PNGs) by using Cu foil substrate. The ZnO NRs are successfully grown on the Cu foil substrate by using all solution based method, a two step hydrothermal synthesis. The ZnO NRs are grown along c-axis well with an average diameter of 75~80 nm and length of $1{\sim}1.5{\mu}m$. The ZnO NRs showed abnormal photoluminescence specrta which is attributed from surface plasmon resonance assistant enhancement at specific wavelength. The PNGs on the SUS substrates show typical piezoelectric output performance which showing a frequency dependent voltage enhancement and polarity dependent charging and discharging characteristics. The output voltage range is 0.79~2.28 V with variation of input strain frequency of 1.8~3.9 Hz. The PNG on Cu foil shows reliable output performance even at the operation over 200 times without showing degradation of output voltage. The current output from the PNG is $0.7{\mu}A/cm^2$ which is a typical out-put range from the ZnO NR-based PNGs. These performance enhancement is attributed from the high flexibility, high electrical conductivity and excellent heat dissipation properties of the Cu foil as a substrate.

• Current Photovoltaic Research
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• v.6 no.1
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• pp.21-26
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• 2018

Beside several advantages, the PV power generation as a clean energy source, is still below the supply level due to high power generation cost. Therefore, the interest in fabricating low-cost thin film solar cells is increasing continuously. $Cu_2O$, a low cost photovoltaic material, has a wide direct band gap of ~2.1 eV has along with the high theoretical energy conversion efficiency of about 20%. On the other hand, it has other benefits such as earth-abundance, low cost, non-toxic, high carrier mobility ($100cm^2/Vs$). In spite of these various advantages, the efficiency of $Cu_2O$ based solar cells is still significantly lower than the theoretical limit as reported in several literatures. One of the reasons behind the low efficiency of $Cu_2O$ solar cells can be the formation of CuO layer due to atmospheric surface oxidation of $Cu_2O$ absorber layer. In this work, atomic layer deposition method was used to remove the CuO layer that formed on $Cu_2O$ surface. First, $Cu_2O$ absorber layer was deposited by electrodeposition. On top of it buffer (ZnO) and TCO (AZO) layers were deposited by atomic layer deposition and rf-magnetron sputtering respectively. We fabricated the cells with a change in the deposition temperature of buffer layer ranging between $80^{\circ}C$ to $140^{\circ}C$. Finally, we compared the performance of fabricated solar cells, and studied the influence of buffer layer deposition temperature on $Cu_2O$ based solar cells by J-V and XPS measurements.