• 제목/요약/키워드: CuInS2

검색결과 2,266건 처리시간 0.037초

Fabrication and Characteristics of C(IG)(SeS)2 Absorbers by Selenization and Sulfurization

  • Son, Young-Ho;Jung, Myoung-Hyo;Choi, Seung-Hoon;Choi, Jung-Kyu;Kim, Jin-Ha;Lee, Dong-Min;Park, Joong-Jin;Lee, Jang-Hee;Jung, Eui-Chun;Kim, Jung-Hun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.361-361
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    • 2011
  • Cu(InGa)(SeS2) (CIGS) thin film solar cells have recently reached an efficiency of 20%. Recent studies suggest a double graded band gap structure of the CIGS absorber layer to be a key issue in the production of high efficiency thin film solar cell using by sputtering process method. In this study, Cu(InGa)(SeS2) absorbers were manufactured by selenization and surfulization, we have deposited CIG precusor by sputtering and Se layer by evaporation before selenization. The objective of this study is to find out surfulization effects to improve Voc and to compare with non-surfulization Cu(InGa)Se2 absorbers. Even if we didn't analysis Ga depth profile of Cu(InGa)(SeS2) absorbers, we confirmed increasing of Eg and Voc through surlization process. In non-surfulization Cu(InGa)Se2 absorbers, Eg and Voc are 0.96eV and 0.48V. Whereas Eg and Voc of Cu(InGa)(SeS2) absorbers are 1.16eV and 0.57V. And the efficiency of 9.58% was achieved on 0.57cm2 sized SLG substrate. In this study, we will be discussed to improve Eg and Voc through surfulization and the other method without H2S. gas.

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Fabrication of wide-bandgap β-Cu(In,Ga)3Se5 thin films and their application to solar cells

  • Kim, Ji Hye;Shin, Young Min;Kim, Seung Tae;Kwon, HyukSang;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • 제1권1호
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    • pp.38-43
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    • 2013
  • $Cu(In,Ga)_3Se_5$ is a candidate material for the top cell of $Cu(In,Ga)Se_2$ tandem cells. This phase is often found at the surface of the $Cu(In,Ga)Se_2$ film during $Cu(In,Ga)Se_2$ cell fabrication, and plays a positive role in $Cu(In,Ga)Se_2$ cell performance. However, the exact properties of the $Cu(In,Ga)_3Se_5$ film have not been extensively studied yet. In this work, $Cu(In,Ga)_3Se_5$ films were fabricated on Mo-coated soda-lime glass substrates by a three-stage co-evaporation process. The Cu content in the film was controlled by varying the deposition time of each stage. X-ray diffraction and Raman spectroscopy analyses showed that, even though the stoichiometric Cu/(In+Ga) ratio is 0.25, $Cu(In,Ga)_3Se_5$ is easily formed in a wide range of Cu content as long as the Cu/(In+Ga) ratio is held below 0.5. The optical band gap of $Cu_{0.3}(In_{0.65}Ga_{0.35})_3Se_5$ composition was found to be 1.35eV. As the Cu/(In+Ga) ratio was decreased further below 0.5, the grain size became smaller and the band gap increased. Unlike the $Cu(In,Ga)Se_2$ solar cell, an external supply of Na with $Na_2S$ deposition further increased the cell efficiency of the $Cu(In,Ga)_3Se_5$ solar cell, indicating that more Na is necessary, in addition to the Na supply from the soda lime glass, to suppress deep level defects in the $Cu(In,Ga)_3Se_5$ film. The cell efficiency of $CdS/Cu(In,Ga)_3Se_5$ was improved from 8.8 to 11.2% by incorporating Na with $Na_2S$ deposition on the CIGS film. The fill factor was significantly improved by the Na incorporation, due to a decrease of deep-level defects.

Aerosol Jet Deposition을 이용한 기판 온도에 따른 $CuInS_2$ 박막 특성

  • 김동찬;번영;공선미;정지원
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.160-160
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    • 2011
  • I-III-VI족 화합물 반도체인 $CuInS_2$(CIS) 박막은 Cu(In,Ga)$Se_2$에 비해서 독성원소를 사용하지 않으므로 환경 친화적이고 Ga, Se를 사용하지 않아 조성의 조절이 쉬우며 태양전지의 이상적인 밴드갭인 1.5 eV에 근접한 1.53 eV의 직접천이형 에너지 밴드갭을 가지고 있어 태양전지의 광흡수층으로써 유망한 재료이다. CIS 박막 증착에는 다양한 방법이 있으며 본 연구에서는 chamber를 진공으로 만들고 CIS를 구성하는 용액으로부터 미립자화 된 입자를 노즐을 통하여 팽창시켜 에어로졸을 생성하고 입자들의 운동에너지를 증착에 직접 이용 할 수 있는 Aerosol Jet Deposition (AJD)라는 방법을 이용하려고 한다. 이 방법은 높은 증착속도로 우수한 박막을 성장시킬 수 있는 저비용 및 단순공정으로 CIS를 증착 할 수 있는 새로운 방법이다. 물을 용매로 하여 수용액 상태의 $CuCl_2{\cdot}2H_2O$, $InCl_3$, $(NH_2)_2CS$를 혼합하여 CIS 용액을 제조하고 carrier gas를 주입하여 CIS 용액을 노즐로 이동시켜 팽창시킨다. 용액이 팽창되면서 온도가 감소하여 응축이 일어나며 이 응축된 용액이 가열된 기판 위에 충돌하여 용매가 증발하면서 결정화된 CIS가 증착이 된다. CIS의 특성은 용액의 전구체 비율, 기판 온도, 팽창 전 압력, chamber 압력 등의 영향을 받는데 본 연구에서는 기판 온도를 증착변수로 선택하여 CIS 박막을 증착하고 박막의 특성을 고찰하고자 한다.

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Synthesis and Crystal Structures of Copper(II) Complexes with Schiff Base Ligands: [Cu2(acpy-mdtc)2(HBA)(ClO4)]·H2O and [Cu2(acpy-phtsc)2(HBA)]·ClO4

  • Koo, Bon Kweon
    • Bulletin of the Korean Chemical Society
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    • 제34권11호
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    • pp.3233-3238
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    • 2013
  • Two new Cu(II) complexes, $[Cu_2(acpy-mdtc)_2(HBA)(ClO_4)]{\cdot}H_2O$ (1) (acpy-mdtc- = 2-acetylpyridine S-methyldithiocarbamate and $HBA^-$ = benzilic acid anion) and $[Cu_2(acpy-phtsc)_2(HBA)]{\cdot}ClO_4$ (2) (acpy-$phtsc^-$ = 2-acetylpyridine 4-phenyl-3-thiosemicarbazate) have been synthesized and characterized by elemental analysis, infrared spectroscopy, thermogravimetric analysis, and single crystal X-ray diffraction. The X-ray analysis reveals that the structures of 1 and 2 are dinuclear copper(II) complexes bridged by two thiolate sulfur atoms of Schiff base ligand and bidentate bridging $HBA^-$ anion. For 1, each of the two copper atoms has different coordination environments. Cu1 adopts a five-coordinate square-pyramidal with a $N_2OS_2$ donor, while Cu2 exhibits a distorted octahedral geometry in a $N_2O_2S_2$ manner. For 2, two Cu(II) ions all have a five-coordinate square-pyramidal with a $N_2OS_2$ donor. In each complex, the Schiff base ligand is coordinated to copper ions as a tridentate thiol mode.

ENHANCED ADHESION STRENGTH OF Cu/polyimide AND Cu/Al/polyimide BY ION BEAM MIXING

  • Chang, G.S.;Kim, T.G.;Chae, K.H.;Whang, C.N.;Zatsepin, D.S.;Kurmaev, E.Z.;Choe, H.S.;Lee, Y.P.
    • 한국진공학회지
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    • 제6권S1호
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    • pp.122-126
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    • 1997
  • the Cu/polyimide system is known to be the best candidate for a multilevel interconnection system due to the low resistance of Cu and to the low dielectric constant of polyimide respectively. Ion beam mixing of Cu(40nm)/polyimide was carried out at room temperature with 80 keV Ar+ and N2+ form $1.5\times$1015 to 15$\times$1015 ions/cm2. The quantitative adhesion strength was measured by a standard scratch test. X-ray photoelectron spectroscopy and x-ray emission spectrocopy are employed to investigate the chemical bonds and the interlayer compound formation of the films Cu/Al/polyimide showed more adhesion strength than Cu/polyimide after ion beam mixing and N2+ ions are more effective in the adhesion enhancement than Ar+ with the same sample geometry. The XES results shows the formation of interlayer compound of CuAl2O4 which can reflect more adhesive Cu/Al/polyimide which has not been reported previously. The latter results is understood by the fact that N2+ ions produce more pyridinelike moiety, amide group and tertiary amine moiety whcih are known as adhesion promotors.

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Cu층 증착시간에 따른 Cu2ZnSnS4 (CZTS) 박막의 특성 (Characterization of the Cu-layer deposition time on Cu2ZnSnS4 (CZTS) Thin Film Solar Cells Fabricated by Electro-deposition)

  • 김윤진;김인영;강명길;문종하;김진혁
    • Current Photovoltaic Research
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    • 제4권1호
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    • pp.16-20
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    • 2016
  • $Cu_2ZnSnS_4$ (CZTS) thin films were fabricated by successive electrodeposition of layers of precursor elements followed by sulfurization of an electrodeposited Cu-Zn-Sn precursor. In order to improve quality of the CZTS films, we tried to optimize the deposition condition of absorber layers. In particular, I have conducted optimization experiments by changing the Cu-layer deposition time. The CZTS absorber layers were synthesized by different Cu-layer conditions ranging from 10 to 16 minutes. The sulfurization of Cu/Sn/Zn stacked metallic precursor thin films has been conducted in a graphite box using rapid thermal annealing (RTA). The structural, morphological, compositional, and optical properties of CZTS thin films were investigated using X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and X-ray Flourescenece Spectrometry (XRF). Especially, the CZTS TFSCs exhibits the best power conversion efficiency of 4.62% with $V_{oc}$ of 570 mV, $J_{sc}$ of $18.15mA/cm^2$ and FF of 45%. As the time of deposition of the Cu-layer to increasing, the properties were confirmed to be systematically changed. And we have been discussed in detail below.

RF 마그네트론 스퍼터링법으로 성장시킨 CuS 박막의 구조적 및 광학적 특성 (Structural and Optical Properties of CuS Thin Films Grown by RF Magnetron Sputtering)

  • 신동혁;이상운;손창식;손영국;황동현
    • 한국표면공학회지
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    • 제53권1호
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    • pp.9-14
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    • 2020
  • CuS (copper sulfide) thin films having the same thickness of 100nm were deposited on the glass substrates using by radio frequency (RF) magnetron sputtering method. RF powers were applied as a process variable for the growth of CuS thin films. The structural and optical properties of CuS thin films deposited under different power conditions (40-100W) were studied. XRD analysis revealed that all CuS thin films had hexagonal crystal structure with the preferential growth of (110) planes. As the sputtering power increased, the relative intensity of the peak with respect to the (110) planes decreased. The peaks of the two bands (264cm-1 and 474cm-1) indicated in the Raman spectrum exactly matched the typical spectral values of the covellite (CuS). The size and shape of the grains constituting the surface of the CuS thin films deposited under the power condition ranging from 40W to 80W hardly changed. However, the spacing between crystal grains tended to increase in proportion to the increase in sputtering power. The maximum transmittance of CuS thin films grown at 40W to 80W ranged from 50 % to 51 % based on 580nm wavelength, and showed a relatively small decrease of 48% at 100W. The band gap energy of the CuS thin films decreased from 2.62eV (at 40W) to 2.56eV (at 100W) as the sputtering power increased.

Influence of Intermolecular Interactions on the Structure of Copper Phthalocyanine Layers on Passivated Semiconductor Surfaces

  • Yim, Sang-Gyu;Jones, Tim S.
    • Bulletin of the Korean Chemical Society
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    • 제31권8호
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    • pp.2247-2254
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    • 2010
  • The surface structures of copper phthalocyanine (CuPc) thin films deposited on sulphur-passivated and plane perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA)-covered InAs(100) surfaces have been studied by low energy electron diffraction (LEED) and van der Waals (vdW) intermolecular interaction energy calculations. The annealing to $300^{\circ}C$ and $450^{\circ}C$ of $(NH_4)_2S_x$-treated InAs(100) substrates produces a ($1{\times}1$) and ($2{\times}1$) S-passivated surface respectively. The CuPc deposition onto the PTCDA-covered InAs(100) surface leads to a ring-like diffraction pattern, indicating that the 2D ordered overlayer exists and the structure is dominantly determined by the intermolecular interactions rather than substrate-molecule interactions. However, no ordered LEED patterns were observed for the CuPc on S-passivated InAs(100) surface. The intermolecular interaction energy calculations have been carried out to rationalise this structural difference. In the case of CuPc unit cells on PTCDA layer, the planar layered CuPc structure is more stable than the $\alpha$-herringbone structure, consistent with the experimental LEED results. For CuPc unit cells on a S-($1{\times}1$) layer, however, the $\alpha$-herringbone structure is more stable than the planar layered structure, consistent with the absence of diffraction pattern. The results show that the lattice structure during the initial stages of thin film growth is influenced strongly by the intermolecular interactions at the interface.

A k-Tree-Based Resource (CU/PE) Allocation for Reconfigurable MSIMD/MIMD Multi-Dimensional Mesh-Connected Architectures

  • Srisawat, Jeeraporn;Surakampontorn, Wanlop;Atexandridis, Kikitas A.
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -1
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    • pp.58-61
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    • 2002
  • In this paper, we present a new generalized k-Tree-based (CU/PE) allocation model to perform dynamic resource (CU/PE) allocation/deallocation decision for the reconfigurable MSIMD/MIMD multi-dimensional (k-D) mesh-connected architectures. Those reconfigurable multi-SIMD/MIMD systems allow dynamic modes of executing tasks, which are SIMD and MIMD. The MIMD task requires only the free sub-system; however the SIMD task needs not only the free sub-system but also the corresponding free CU. In our new k-Tree-based (CU/PE) allocation model, we introduce two best-fit heuristics for the CU allocation decision: 1) the CU depth first search (CU-DFS) in O(kN$_{f}$ ) time and 2) the CU adjacent search (CU-AS) in O(k2$^{k}$ ) time. By the simulation study, the system performance of these two CU allocation strategies was also investigated. Our simulation results showed that the CU-AS and CU-DFS strategies performed the same system performance when applied for the reconfigurable MSIMD/MIMD 2-D and 3-D mesh-connected architectures.

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유동층 반응기를 이용한 구리와 니켈의 황화물 결정화에 결정화 시약 및 pH가 미치는 영향 (Effects of crystallization reagent and pH on the sulfide crystallization of Cu and Ni in fluidized bed reactor)

  • 정은후;심수진;윤성택;홍석원
    • 상하수도학회지
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    • 제28권2호
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    • pp.207-215
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    • 2014
  • Wastewater containing heavy metals such as copper (Cu) and nickel (Ni) is harmful to humans and the environment due to its high toxicity. Crystallization in a fluidized bed reactor (FBR) has recently received significant attention for heavy metal removal and recovery. It is necessary to find optimum reaction conditions to enhance crystallization efficacy. In this study, the effects of crystallization reagent and pH were investigated to maximize crystallization efficacy of Cu-S and Ni-S in a FBR. CaS and $Na_2S{\cdot}9H_2O$ were used as crystallization reagent, and pH were varied in the range of 1 to 7. Additionally, each optimum crystallization condition for Cu and Ni were sequentially employed in two FBRs for their selective removal from the mixture of Cu and Ni. As major results, the crystallization of Cu was most effective in the range of pH 1-2 for both CaS and $Na_2S{\cdot}9H_2O$ reagents. At pH 1, Cu was completely removed within five minutes. Ni showed a superior reactivity with S in $Na_2S{\cdot}9H_2O$ compared to that in CaS at pH 7. When applying each optimum crystallization condition sequentially, only Cu was firstly crystallized at pH 1 with CaS, and then, in the second FBR, the residual Ni was completely removed at pH 7 with $Na_2S{\cdot}9H_2O$. Each crystal recovered from two different FBRs was mainly composed of CuxSy and NiS, respectively. Our results revealed that Cu and Ni can be selectively recovered as reusable resources from the mixture by controlling pH and choosing crystallization reagent accordingly.