• Progress in Superconductivity
• /
• v.13 no.3
• /
• pp.158-162
• /
• 2012

$Y(Pr)Ba_2Cu_4O_8$ system is one of the most studied high temperature superconductors. Substitution of Pr for Y in this system suppresses $T_c$ and superconductivity finally disappears at a high Pr doping. There are competing theories for the suppression of $T_c$ but systematic experimental results are very rare. In order to find the change in Fermi surface topology which can affect the superconductivity, we have performed angle-resolved photoemission studies on single crystal samples of $YBa_2Cu_4O_8$ and $PrBa_2Cu_4O_8$. While the Fermi surface of $YBa_2Cu_4O_8$ shows a similar topology to those of other cuprates, we observe only 1D like band structures in $PrBa_2Cu_4O_8$. We find no significant differences in the chain band for both samples.

• Korean Journal of Materials Research
• /
• v.33 no.9
• /
• pp.367-371
• /
• 2023

In this study we examine variations in the structure of perovskite compounds of LaBa₂Cu₂O₉, LaBa2₂CaCu₃O₁₂ and LaBa₂Ca₂Cu₅O₁₅ synthesized using the solid state reaction method. The samples' compositions were assessed using X-ray fluorescence (XRF) analysis. The La: Ba: Ca: Cu ratios for samples LaBa₂Cu₂O₉, LaBa2₂CaCu₃O₁₂ and LaBa₂Ca₂Cu₅O₁₅ were found by XRF analysis to be around 1:2:0:2, 1:2:1:3, and 1:2:2:5, respectively. The samples' well-known structures were then analyzed using X-ray diffraction. The three samples largely consist of phases 1202, 1213, and 1225, with a trace quantity of an unknown secondary phase, based on the intensities and locations of the diffraction peaks. According to the measured parameters a, b, and c, every sample has a tetragonal symmetry structure. Each sample's mass density was observed to alter as the lead oxide content rose. Scanning electron microscope (SEM) images of the three phases revealed that different Ca-O and Cu-O layers can cause different grain sizes, characterized by elongated thin grains, without a preferred orientation.

• Current Photovoltaic Research
• /
• v.3 no.3
• /
• pp.75-79
• /
• 2015

Recently, $Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) has been received a tremendous attraction as light absorber material in thin film solar cells (TFSCs), because of its earth abundance, inexpensive and non-toxic constituents and versatile material characteristics. Kesterite CZTSSe thin films were synthesized by sulfo-selenization of sputtered Cu/Sn/Zn stacked metallic precursors. The sulfo-selenization of Cu/Sn/Zn stacked metallic precursor thin films has been carried out in a graphite box using rapid thermal annealing (RTA) technique. Annealing process was done under sulfur and selenium vapor pressure using Ar gas at $520^{\circ}C$ for 10 min. The effect of tuning Se/(S+Se) precursor composition ratio on the properties of CZTSSe films has been investigated. The XRD, Raman, FE-SEM and XRF results indicate that the properties of sulfo-selenized CZTSSe thin films strongly depends on the Se/(S+Se) composition ratio. In particular, the CZTSSe TFSCs with Se/(S+Se) = 0.37 exhibits the best power conversion efficiency of 4.83% with $V_{oc}$ of 467 mV, $J_{sc}$ of $18.962mA/cm^2$ and FF of 54%. The systematic changes observed with increasing Se/(S+Se) ratio have been discussed in detail.

• Journal of the Korean Vacuum Society
• /
• v.7 no.2
• /
• pp.112-117
• /
• 1998

TiN has been investigated as a good candidate for a diffusion barrier of Cu. Therefore, in this study, the grain boundary diffusion of Cu in TiN film was investigated by X-ray photoelectron spectroscopy(XPS). In general, TiN has a columnar grain structure. In the relatively lower temperature, less than 1/3 of the melting point, it was observed that Cu diffused into TiN mainly along the grain boundaries of TiN. The grain size of TiN was measured by atomic force microscope (AFM). In order to estimate the grain boundary diffusion constants, we used the modified surface accumulation method. The activation energy, $Q_b$ was 0.23 eV, and the diffusivity, $D_{bo}$ was $5.5\times10^{-12{\textrm{cm}^2$/sec.

• Membrane and Water Treatment
• /
• v.10 no.3
• /
• pp.201-206
• /
• 2019

In this study, we performed an electrowinning process for effective removal of metals (Cu and Ni) in solution and their recovery as solid forms. A complete removal of Cu and Ni (1,000 mg/L) was observed during four times recycling test, indicating that our electrowinning system can ensure the efficient metal removal with high stability and durability. In addition, we investigated effect of operation parameters (i.e., concentration of boric acid only for Ni, variation of pH, concentration of electrolyte ($H_2SO_4$), and cell voltage) on the efficiency of metal removal (Cu and Ni) during the electrowinning. The addition of boric acid significantly enhanced removal efficiency of Ni as the concentration of boric acid increased up to 10 g/L. Compared to negligible pH effect (pH 1, 2, and 4) on the Cu removal, we observed the increase in removal efficiency of Ni as the pH increased from 1 to 4. The electrolyte concentration did not significantly influence the removal of Cu and Ni in this study. We also obtained great removal rates of Cu and Ni at 2.5 V and 4.0 V, which were much faster than those at lower voltages. Finally, almost 99% of each Cu and Ni (1,000 mg/L) was selectively removed from the mixture of metals by adjusting pH and addition of boric acid after the completion of Cu removal. The findings in this study can provide a fundamental knowledge about effect of important parameters on the efficiency of metal recovery during the electrowinning.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.83-83
• /
• 2003

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.62$\times$10$^{16}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10 K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 7 meV and 5.9 meV, respectivity. By Haynes rule, an activation energy of impurity was 59 meV.

• Korean Journal of Materials Research
• /
• v.24 no.11
• /
• pp.617-624
• /
• 2014

To elucidate the effects of a pretreatment process on the uniformity of Ag electroless plating on Cu flakes, pretreatment time was mainly considered with a mixed solution of 0.15 M ammonium hydroxide and 0.0375 M ammonium sulphate. Optical inspection of Ag-coated Cu flakes determined that the optimal pretreatment time is 120 s. Repetition of the sequence in which Ag plating was done immediately after the pretreatment of 120 s clearly enhanced the plating uniformity. Scanning electron microscopy revealed that holes were formed irregularly on some Cu flakes during the period from the asdropping of an Ag precursor solution to 5 min. The hole formation was judged to be due to continuous removal of Cu on the local surfaces by the repetitive formation and elimination of $Cu_2O$ or $Cu(OH)_2$ layers. However, the increase of the amount of Ag coating suppressed the hole creation and increasingly enhanced the antioxidant property.

• Journal of Powder Materials
• /
• v.11 no.2
• /
• pp.158-164
• /
• 2004

W-Cu composite has been used for the applications requiring both high strength, good thermal and electrical conductivity. A graded combination of W and Cu will reduce thermal stress concerned with heat conduction, maintaining good thermal conductivity and high mechanical strength. In the present work, an attempt was made to fabricate continuous W-Cu FGM by preparing the graded porous structure of W skeleton using spark plasma sintering (SPS) process followed by infiltrating Cu. The graded porous structure was prepared at 150$0^{\circ}C$ for 60s under pressure of 15MPa by SPS process using a graphite mold with varying crr)ss section in the longitudinal direction. Infiltration of Cu was performed at 115$0^{\circ}C$ for 1 hour under $H_2$. W-Cu composite with graded Cu composition of 14 to 27 wt％ was finally prepared. In this process the gradient of composition could be conveniently controlled by varying the gradient of cross sectional area of graphite mold, temperature and pressure.

• Journal of Powder Materials
• /
• v.29 no.5
• /
• pp.370-375
• /
• 2022

Cu-doped ZnSe quantum dots were successfully synthesized in an aqueous solution using an internal doping method. The effects of ligand type, CuSe synthesis temperature, and heating time on Cu-doped ZnSe synthesis were systematically investigated. Of MPA, GSH, TGA, and NAC used as ligands, MPA was the optimal ligand as determined by PL spectrum analysis. In addition, the emission wavelength was found to depend on the synthesis temperature of the internal doping core of CuSe. As the temperature increased, the doping of Cu²⁺ was enhanced, and the emission wavelength band was redshifted; accordingly, the emission peaks moved from blue to green (up to 550 nm). Thus, the synthesis of Cu:ZnSe using internal doping in aqueous solutions is a potential method for ecomanufacturing of color-tuned ZnSe quantum dots for display applications.

• Korean Journal of Crystallography
• /
• v.11 no.3
• /
• pp.137-146
• /
• 2000

The stoichiometric mix of evaporating materials for he CuInS₂ single crystal thin films was prepared. To obtain the single crystal thin films, CuINS₂ mixed crystal was deposited on etched semi-insulator GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperature were 640℃ and 430℃, respectively and the thickness of the single crystal thin films was 2 ㎛. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility deduced from Hall data are 9.64x10/sup 22//㎥ and 2.95x10/sup -2/ ㎡/V·s, respectively at 293 K. he optical energy gap was found to be 1.53 eV at room temperature. From the photocurrent spectrum obtained by illuminating perpendicular light on the c-axis of the thin film, we have found that the values of spin orbit coupling splitting ΔSo and the crystal field splitting ΔCr were 0.0211 eV and 0.0045 eV at 10K, respectively. From PL peaks measured at 10K, were can assign the 807.7 nm (1.5350 eV) peak to E/sub x/ peak of the free exciton emission, the 810.3 nm(1.5301 eV) peak to I₂ peak of donar-bound exciton emission and the 815.6 nm(1.5201 eV) peak to I₁ peak of acceptor-bound excition emission. In addition, the peak observed at 862.0 nm(1.4383 eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).