• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.125-129
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• 2005

Two kinds of physical treatments were examined for the analysis both of intrinsic surface and interior nature of CuInS $e_2$[CIS] and CuGaS $e_2$[CGS] films grown in separated systems. For the first method, a selenium protection layer which was immediately deposited after the growth of the CIS was investigated. The Se cap layer protects CISe surface from oxidation and contamination during the transport under ambient atmosphere. The Se cap was removed by thermal annealing at temperature above 15$0^{\circ}C$. After the decapping treatment at 2$25^{\circ}C$ for 60 min, ultraviolet photoemission and inverse photoemission measurements of the CIS film showed that its valence band maximum(VBM) and conduction band minimum (CBM) are located at 0.58 eV below and 0.52 eV above the Fermi level $E_{F}$, respectively. For the second treatment, an Ar ion beam etching was exploited. The etching with ion kinetic energy $E_{k}$ above 500 eV resulted in broadening of photoemission spectra of core signals and occasional development of metallic feature around $E_{F}$. These degradations were successfully suppressed by decreasing $E_{k}$ below 400 eV. CGS films etched with the beam of $E_{k}$ = 400 eV showed a band gap of 1.7 eV where $E_{F}$ was almost centered.st centered.

• Korean Journal of Veterinary Research
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• v.41 no.2
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• pp.157-165
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• 2001

Amplified fragment length polymorphism(AFLP) technique is based on the polymorphism detection through selective PCR amplification of restriction fragments from digested genomic DNA and thus includes the procedures of the total DNA digestion by endonucleases, ligation of adapters to the ends of the fragments, and following the selective amplification of the restricted DNA fragments. This study were aimed to : (1) determine the genetic variability of S aureus strains, (2) estimate genetic diversity within and among these strains, (3) compare phylogenetic relationships among these strains as genetic markers using AFLP techniques. Genomic DNA was digested with a particular combination of three restriction enzymes with specific recognition sites and the DNA fragments were ligated to restriction specific adapters and amplified using the selective primer combinations. In the S aureus strain, the number of scorable AFLP bands detected per each primer combination varied from 29 to 102, with an average of 61.59 using 27 primer combinations. A total of 1,663 markers were generated, 904 bands of which were polymorphic, showing a 33.48% level of polymorphism with these primer combinations. Among the primer combinations, E02/T02, E02/T03, E04/H02, E02/T01 and E04/H03 primer combinations showed a high level of polymorphism with 0.78, 0.76, 0.74, 0.71 and 0.70, respectively. But T03/H01, E01/T02 and E01/T03 primer combinations showed a low level of polymorphism with 0.38, 0.37 and 0.15, respectively, Therefore, the former primer combinations will be the most effective for AFLP analysis of S aureus. In SA1 sub-types the level of polymorphism of S aureus KCTC 1927 was similar to that of S aureus CU 01(0.825) and higher than those of other strains such as S aureus CU 02 (0.715), S aureus KCTC 2199(0.625), S aureus KCTC 1916(0.607) and S aureus KCTC 1621 (0.553). In SA2 sub-types the level of polymorphism of S aureus CU 07 was similar to that of S aureus CU 08(0.935) and higher than those of both S aureus CU 04(0.883) and S aureus CU 05(0.883) and lower than those of S aureus CU 03(0.583). In SA3 subtypes the level of polymorphism of S aureus CU 11 was similar to that of S aureus CU 12(0.913) and lower than that of S aureus CU 15(0.623). The results proved that AFLP marker analysis of S aureus strain could be used to study the epidemiology of mastitis and in addition, common genotype in geographic region could be useful for the development of an effective vaccine or DNA marker for easy diagnosis of mastitis caused by S aureus infection.

• Journal of Sensor Science and Technology
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• v.29 no.3
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• pp.156-161
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• 2020

In this study, hierarchical mesoporous CuO spheres, ZnO flowers, and heterojunction CuO/ZnO nanostructures were fabricated via a facile hydrothermal method. The as-prepared materials were characterized in detail using various analytical methods such as powder X-ray diffraction, micro Raman spectroscopy, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, and transmission electron microscopy. The obtained results are consistent with each other. The H₂S-sensing characteristics of the sensors fabricated based on the CuO spheres, ZnO flowers, and CuO/ZnO heterojunction were investigated at different temperatures and gas concentrations. The sensor based on ZnO flowers showed a maximum response of ~141 at 225 ℃. The sensor based on CuO spheres exhibited a maximum response of 218 at 175 ℃, whereas the sensor based on the CuO/ZnO nano-heterostructure composite showed a maximum response of 344 at 150 ℃. The detection limit (DL) of the sensor based on the CuO/ZnO heterojunction was ~120 ppb at 150 ℃. The CuO/ZnO sensor showed the maximum response to H₂S compared with other interfering gases such as ethanol, methanol, and CO, indicating its high selectivity.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.375-375
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• 2011

Cu(In1-xGax)Se2 (CIGS)박막증착법 중 금속 전구체의 셀렌화 공정법은 다른 제조 방법에 비해 대면적 생산에 유리하고, 비교적 공정 과정이 간단하다는 장점이 있다. 이 제조 방법은 금속 전구체를 만든 후에 셀렌화 공정을 하게 된다. 셀렌화 공정은 대부분 H2Se 가스를 사용하지만 유독성으로 사용하는데 주의해야 한다. 본 실험은 H2Se를 사용하지 않고 Se원료를 주입하기 위해 Se cracker를 사용했고 금속 전구체 증착과 셀렌화를 동시에 하는 반응성 스퍼터링 후 열처리 법을 이용하여 CIGS 박막을 증착 했다. CIGS의 박막의 Cu/[In+Ga], Ga/[In+Ga]비를 변화시켜 특성변화를 관찰했다. Cu/[In+Ga]비가 감소할수록 CIGS의 결정방향인 (112) 이 우세하게 발달했고 Ga/[In+Ga]비가 증가할수록 CIGS의 결정면 사이의 값이 작아지기 때문에 CIGS peak의 2-Theta 값이 증가하게 된다. CIGS 박막 태양전지의 구조는 Al/Ni/ITO/i-ZnO/CdS/CIGS/Mo/glass 제작했다. CIGS박막의 조성비가 Cu/[In+Ga]=0.84, Ga/[In+Ga]=0.24인 박막태양전지에서 개방전압 0.48 V, 단락전류밀도 33.54 mA/cm2, 충실도 54.20% 그리고 변환효율 8.63%를 얻었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.182-183
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• 2006

$CuInSe_2$ single crystal thin films was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;153K)$. After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.

• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.135-139
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• 2009

$H_2S$ micro-gas sensors have been developed employing $SnO_2$:CuO composite thin films. The films were prepared by e-beam evaporation of Sn and Cu metals on silicon substrates, followed by oxidation at high temperatures. Results of various studies, such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) reveal that $SnO_2$ and CuO are mutually non-reactive. The CuO grains, which in turn reside in the inter-granular regions of $SnO_2$, inhibit grain growth of $SnO_2$ as well as forming a network of p-n junctions. The film showed more than a 90% relative resistance change when exposed to $H_2S$ gas at 1 ppm in air at an operating temperature of $350^{\circ}C$ and had a short response time of 8 sec.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.84-89
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• 1992

The polycrystalline $CuInS_2$ thin films are prepared by vacuum heat treatment of layer, which is deposited by vaccum evaporation in order. The electrical and optical properties of the films are investigated at various sulfur deposition mole rate, substrate temperature, heat treatment temperature and time. From data, n type-$CuInS_2$ exhibits resistivity, transmittance and energy band gap with 142[${\Omega}{\cdot}cm$], 73[%], and 1.5[eV] respectively at optimum fabrication condition. Finally, the films are fabricated with chalcoprite structure.

• Korean Journal of Crystallography
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• v.8 no.2
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• pp.105-110
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• 1997

1μm-CdS films for a window layer of CdS/CuInSe2 solar cell have been prepared by vacuum of 1x10-3 mTorr. Source and substrate temperature ranges were used 800-1100'C and 50-200℃ respectively. Structural, electircal and optical properties of CdS films have been investigated by X-ray diffractometer (XRD), scanning electron microscopy (SSEM), electrical resistivity, the Hall measurement and optical transmission spectra. Electrical resistivity and optical transmission of the CdS films decreased with the increase in CdS source temperature without substrate heating. All the films had hexagonal structure and strong texture with (002) orientation of grain normal to the substrate glass. CdS films evaporated at 1000℃ were the highest electrical conductivity of 0.9(S/cm). Electrical resistivity and optical transmission at the substrate temperature of 100℃ were 40(Ω,cm) and 80% respectively.

• Bulletin of the Korean Chemical Society
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• v.20 no.3
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• pp.352-354
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• 1999

The spectrophotometric determination of Cu(Ⅱ) with α-(2-benzimidazolyl)-α',α"-(N-5-nitro-2-pyridylhydrazone)-toluene has been investigated. The optimum conditions of pH, stability, concentration of ligand and surfactant were evaluated. This method is a simple and sensitive method for determination of Cu(Ⅱ) and offers a selective separation of Cu(Ⅱ) from sample solution containin- I ppm below amount of Ni(Ⅱ), Co(Ⅱ), Zn(Ⅱ) and Sn(Ⅱ). Copper was determined by measuring the absorbance of Cu(Ⅱ)-BINPHT complex extracted with benzene in Brij 58 surfactant at 410 nm. Beer's law is obeyed over the concentration range 0∼2.5 μgmL-1 and the detection limit (S/N=2) is 0.06 μgmL-1. The relative standard deviation at the 0.3 μgmL-1 is 2.4% (N=7). The method was applied for the determination of Cu(Ⅱ) in various milks.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.4
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• pp.514-519
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• 2006

SrS:Cu, Cl thin films have been grown by the hot wall technique with S furnace placed on the outside of the growth chamber in order to investigate the crystallographic and optical characteristics. The films have a good crystallinity independent of CuCl wall temperature and PL characteristics showed a peak assigned by the transition form $3d^94s^1\;(^3Eg)$ to $3d^{10}\;(^1A_{1g})$ of $Cu^+$ center. It has also been found that. from the PLE spectra, $Cu^+$ luminescent centers are doped in the host materials. The EL emission from SrS:Cu-based device showed a greenish-blue but shifted to short wavelength compared to SrS:Ce-based EL. The device was obtained the maximum luminance of $110cd/m^2$ and the maximum luminous efficiency of $0.1\;lm/W$ at $V_{40}$.