• Bulletin of the Korean Chemical Society
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• 제35권1호
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• pp.189-196
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• 2014

Water dispersible ZnS based nanocrystals: ZnS (blue), ZnS:Cu (green) and ZnS:Mn (yellow-orange) were synthesized by capping the surface of the nanocrystals with a mercaptopropionic acid (MPA) molecule. The MPA capped ZnS based nanocrystal powders were characterized by using XRD, HR-TEM, EDXS, FT-IR, and FT-Raman spectroscopy. The optical properties of the colloidal nanocrystals were also measured by UV/Vis and photoluminescence (PL) spectroscopies in aqueous solvents. The PL spectra showed broad emission peaks at 440 nm (ZnS), 510 nm (ZnS:Cu) and 600 nm (ZnS:Mn), with relative PL efficiencies in the range of 4.38% to 7.20% compared to a reference organic dye. The measured average particle sizes from the HR-TEM images were in the range of 4.5 to 5.0 nm. White light emission was obtained by mixing these three nanocrystals at a molar ratio of 20 (ZnS):1 (ZnS:Cu):2 (ZnS:Mn) in water. The measured color coordinate of the white light was (0.31, 0.34) in the CIE chromaticity diagram, and the color temperature was 5527 K.

• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.627-631
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• 2010

ZnS:Mn yellow phosphors doped with Cu for white light emitting diodes were synthesized by solid state reaction method. The optical properties and structures of ZnS:Mn,Cu phosphors were investigated by x-ray diffraction, photoluminescence, and scanning electro microscopy. Photoluminescence excitation spectra originated from $Mn^{2+}$ were ranged from 450 nm to 500 nm. The yellow emission at around 580 nm was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions in ZnS:Mn,Cu phosphors. The highest photoluminescence intensity of the phosphors under 405 nm excitation was obtained at Cu concentration of 0.02 mol%. The enhanced photoluminescent intensity in the ZnS:Mn,Cu phosphors was interpreted by energy transfer from Cu to Mn.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.121-124
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• 1998

Generally the structure of powder electroluminescent devices (PELDs) on ITO-film was makeup of the ZnS:Cu phosphor layer and BaTiO$_3$ insulating layer. The active layer, which consists of a suitably doped ZnS powder mixed in a dielectric, is sandwiched between two electrodes; one of which are ITO film and the other is aluminum. In this paper, three kinds of powder eleotroluminescent devices (PELDs) : WK-A(ITO/BaTiO$_3$/ZnS:Cu/Silver paste). WK-B(ITO/BaTiO$_3$+ZnS:Cu/Silver paste) and WK-C(ITO/BaTiO$_3$/ZnS:Cu/BaTiO$_3$/Silver paste), fabricated by spin coating method, were investigated. To evaluate the luminescence properties of three kinds of PELDs, EL emission spectroscopy, transferred charge density and time response of EL emission intensity under square wave voltage driving were measured.

• Advances in nano research
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• 제5권3호
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• pp.193-201
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• 2017

ZnO, ZnO: Cu, Ga, and ZnO: Cu, Ga, Ag thin films were obtained by oxidization of ZnS and ZnS: Cu, Ga films deposited onto glass substrates by electron-beam evaporation from ZnS and ZnS: Cu, Ga targets and from ZnS: Cu, Ga film additionally doped with Ag by the closed space sublimation technique at atmospheric pressure. The film thickness was about $1{\mu}m$. The oxidation was carried out at $600-650^{\circ}C$ in air or in an atmosphere containing water vapor. Structural characteristics were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Photoluminescence (PL) spectra of the films were measured at 30-300 K using the excitation wavelengths of 337, 405 and 457.9 nm. As-deposited ZnS and ZnS: Cu, Ga films had cubic structure. The oxidation of the doped films in air or in water vapors led to complete ZnO phase transition. XRD and AFM studies showed that the grain sizes of oxidized films at wet annealing were larger than of the films after dry annealing. As-deposited doped and undoped ZnS thin films did not emit PL. Shape and intensity of the PL emission depended on doping and oxidation conditions. Emission intensity of the films annealed in water vapors was higher than of the films annealed in the air. PL of ZnO: Cu, Ga films excited by 337 nm wavelength exhibits UV (380 nm) and green emission (500 nm). PL spectra at 300 and 30 K excited by 457.9 and 405 nm wavelengths consisted of two bands - the green band at 500 nm and the red band at 650 nm. Location and intensities ratio depended on the preparation conditions.

• 한국결정성장학회지
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• 제12권3호
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• pp.138-143
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• 2002

본 연구에서는 용액합성법(solution synthesis technique)에 의해 ZnS : Cu nano 입자를 합성하였고, 결정구조 및 입자형상 등의 구조적 특성과, 광흡수/투과 특성, 에너지밴드갭, 그리고 photoluminescence(PL) 여기 및 발광 특성 등의 광학적 특성을 분석하였다. 일반적인 용액상태의 화학적 합성 방법과는 달리 합성온도를 $80^{\circ}C$로하였으며, sulfur의 precursor로 thiourea를 채택하여 Cu 도핑의 용이성을 구현하였다. 합성된 undoped ZnS 와 ZnS : Cu nano 입자는 모두 cubic 구조를 가졌으며 구형입자로 합성되었고, 광흡수단의 위치도 모두 ~305 nm에 나타나서 양자사이즈효과가 발생하였음을 알 수 있었다. PL 발광강도와 반가폭은 Cu 도핑농도가 0.03M 일 때 각각 최고치와 최저치를 나타냈는데, 이와 같이 용액합성법에 의해 합성된 ZnS : Cu 에서 Cu 의 농도변화에 따른 PL 스펙트럼의 강도와 반가폭의 변화는 본 연구에서 최초로 보고되는 것이다. 광흡수단 측정 및 PL 여기 실험결과, 본 연구의 주된 발광피크인 ~510 nm 발광밴드는 Cu에 의해 에너지밴드갭 내에 형성된 발광재결합센터를 통한 것임을 알 수 있었다.

• 한국재료학회지
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• 제23권6호
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• pp.304-308
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• 2013

The effect of a sputter deposition sequence of Cu, Zn, and Sn metal layers on the properties of $Cu_2ZnSnS_4$ (CZTS) was systematically studied for solar cell applications. The set of Cu/Sn/Zn/Cu multi metal films was deposited on a Mo/$SiO_2$/Si wafer using dc sputtering. CZTS films were prepared through a sulfurization process of the Cu/Sn/Zn/Cu metal layers at $500^{\circ}C$ in a $H_2S$ gas environment. $H_2S$ (0.1%) gas of 200 standard cubic centimeters per minute was supplied in the cold-wall sulfurization reactor. The metal film prepared by one-cycle deposition of Cu(360 nm)/Sn(400 nm)/Zn(400 nm)/Cu(440 nm) had a relatively rough surface due to a well-developed columnar structure growth. A dense and smooth metal surface was achieved for two- or three-cycle deposition of Cu/Sn/Zn/Cu, in which each metal layer thickness was decreased to 200 nm. Moreover, the three-cycle deposition sample showed the best CZTS kesterite structures after 5 hr sulfurization treatment. The two- and three-cycle Cu/Sn/Zn/Cu samples showed high-efficient photoluminescence (PL) spectra after a 3 hr sulfurization treatment, wheres the one-cycle sample yielded poor PL efficiency. The PL spectra of the three-cycle sample showed a broad peak in the range of 700-1000 nm, peaked at 870 nm (1.425 eV). This result is in good agreement with the reported bandgap energy of CZTS.

• Advances in materials Research
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• 제13권1호
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• pp.55-62
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• 2024

Cu-based sulfides have recently emerged as promising thermoelectric (TE) materials due to their low cost, non-toxicity, and abundance. In this research, point defect structure of Cu_2-xZnSnS₄ (x=0.1, 0.2, 0.3) samples were synthesized by the mechanical alloying method. Mixed powders of Cu, Zn, Sn and S were milled using high energy ball milling at a rotation speed of 300 rpm in Ar atmosphere. The milled Cu_2-xZnSnS₄ powders were heat-treated at 723 K for 24 h, and subsequently consolidated using spark plasma sintering (SPS) under an applied pressure of 60 MPa for 15 min. The thermal conductivity of the sintered Cu_2-xZnSnS₄ samples was evaluated. A well-defined Cu_2-xZnSnS₄ powders were successfully formed after milling for 16 h, with the particle sizes mostly distributed in the range of 60-100 nm. The lattice constants of aand cdecreased with increasing composition value x. The thermal conductivity of sintered x=0.1 sample exhibited the lowest value and attained 0.93 W/m K at 673 K.

• 한국전기전자재료학회논문지
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• 제22권7호
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• pp.584-588
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• 2009

Layered ZnS/$CaF_2$/ZnS/Cu film was deposited on glass substrate by using evaporation method. ZnS and $CaF_2$ were chosen as high and low refractive materials. Cu was used as mid-reflective layer. Reflectance with different optical thickness of $CaF_2$ ranging from $0.25{\lambda}\;to\;0.5{\lambda}$ were systematically investigated by using spectrophotometer. In order to expect the experimental results, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. Based on the results taken by spectrophotometer, the ZnS/$CaF_2$/ZnS/Cu multi-layered thin film show the maximum reflectance of 80% at 625nm $(0.25{\lambda}\;in\;CaF_2)$ and 42% at 660nm $(0.5{\lambda}\;in\;CaF_2)$ respectively. As compared with the experimental results and simulation data, it was confirmed the experimental data is well matched with the EMP data.

• 한국전기전자재료학회논문지
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• 제35권6호
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• pp.562-567
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• 2022

Novel self-illuminated smart windows were fabricated consisting of Cu-doped ZnS (ZnS:Cu) powder and polymer-dispersed liquid crystal (PDLC). This smart window shows not only switchable transparency but also self-illumination without any attachable luminous body. Its electro-optical characteristics, transmittance, and luminance were investigated in relation to various applied voltages and composition ratios. The optical transmittance and luminous intensity increased with increasing applied voltages. However, the optical transmittance decreased with increasing ZnS:Cu powder content. One of the self-illuminated smart windows, which was fabricated with 9 wt% of ZnS:Cu, achieved the optical transmittance of 60.5% (at 550 nm) and the luminance of 11.0 cd/m² at 100 V. This smart window could be used as a normal switchable smart window in daytime and light-emitting signage at night.

• 한국분말재료학회지
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• 제19권5호
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• pp.362-366
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• 2012

We report the effect of the chain length of carboxylic acid on the photoluminescence(PL) of $CuInS_2$/ZnS nanocrystals. $CuInS_2$/ZnS nanocrystals with emission wavelength ranging from 566 nm through 583 nm were synthesized with zinc acetate and carboxylic acids with various chain length. In this study, $CuInS_2$/ZnS nanocrystals prepared using long chain carboxylic acid showed more improved PL intensity. The origin of strong photoluminescence of the nanocrystals prepared with zinc acetate and long chain carboxylic acid was ascribed to improved size distribution due to strong reactivity between long chain carboxylic acid and zinc acetate.