• Journal of the Korean Magnetics Society
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• v.20 no.1
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• pp.8-12
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• 2010

The magnetostriction and stress of multilayer $NiFeCr/(Cu/Co_{90}Fe_{10}){\times}N/NiFeCr$ films were investigated. As the number of Cu $15{\AA}$/CoFe $15{\AA}$ bilayers was increased, the saturation magnetostriction decreased from $-5.6\times10^{-6}$ at 2 bilayers to $-8.5\times10^{-6}$ at 20 bilayers. A change of CoFe thickness from 10 to $20{\AA}$ caused a decrease in the magnitude of tensile stress from 980MPa to 590MPa as the number of Cu $15{\AA}$/CoFe $15{\AA}$ bilayers increased from 2 to 20. The maximum magnetostrictive anisotropy field that could be developed due to nonzero magnetostriction and stress is calculated to be 135.7 Oe when the number of Cu $15{\AA}$/CoFe $15{\AA}$ bilayers is 10.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.645-650
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• 1997

We manufactured CoNbZr/Cu/CoNbZr multi-layer films by rf magnetron sputtering methods and formed the patterns on the deposited multi-layer films. In this study, we fabricated a new etchant for forming the patterns by the wet etching with etchant and we searched for the best etching conditions and the etchant composition. Cu was etched selectively independent on the concentration of iron chloride solution, but amorphous CoNbZr thin film did not. The etchant was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec, which etched CoNbZr/Cu/CoNbZr multi-layer films at the same time. Also, the etchant etched CoNbZr/Cu/CoNbZr multi-layer films by the three-step. It was shown that the cross-section had the isotropic structure and excellent etching characteristics with the above etchant.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.5
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• pp.811-816
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• 2006

The single layered magnetic thin films with anisotropic magnetoresistance behavior have advantage on micro integration due to their low cost in manufacturing. Although the conventional MCo (M=Cu, Ag) amorphous ribbons using a rapid solidification process have showed appropriate for magnetic property for bulk devices, they are not appropriate for micro-scale devices due to their brittleness. We prepared the thermal evaporated 100 nm-thick $Cu_{1-x}Co_x\;and\;Ag_{1-x}Co_x(x=0.1{\sim}0.7)$ films on silicon wafers and investigated the magnetic property of the as-depo films such as magnetization and magnetoresistance ratio. We confirmed that the maximum MR ratio of 1.4 and 2.6% at the external field of 0.5 Tesla in $CuCo_{30},\;AgCo_{40}$ films, respectively. Our result implies that AMR may be slightly less than those of the conventional CuCo and AgCo ribbons due to surface scattering, but their AMR ratio be enough for micro-scale application with easy integration compatibility for the process without surface oxidation.

• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.310-313
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• 1993

The effect of Ni content in Cu underlayer on the magnetoresistance of Cu/Co artificial superlattice has been investigated. As the content of Ni increased, the preferred orientation of artificial superlattice changed from fec (100) to fcc (111) due to the change of the preferred orientation of the underlayer. When the content of Ni was 6 %, 26.7 % of magnetoresistance with 175 Oe of saturation field could be obtained in ${[Cu(19\AA)/Co(30\AA)]}_{20}|Cu-6%Ni(200\AA)/Si$.

• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.305-309
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• 1993

Thermal stability of Co/Cu artificial superlattice (AS) prepared by RF-magnetron sputtering and the effect of low temperature annealing on the magnetoresistance of the AS have been investigated in this work. Dependence of annealing behavior on the Cu spacer thickness, Fe underlayer thickness, and kind of the underlayer was examined and the relationship between the interfacial reaction and magnetoresistance was studied. It turned out that when Co/Cu AS was annealed at low temperature ($<450^{\circ}C$), the magnetoresistance could increase in the case of AS with thick spacer Cu ($20~25\AA$) layer, whereas it decreased in the case of AS with thin spacer Cu ($7\AA$) layer, which of the former is in contrast with previous reports and the latter in consistent with them. The increase of magnetoresistance is due to increase of interfacial atomic sharpness, which is supported by low angle X-ray diffraction analysis. The thermal stability of Co/Cu AS was better in the case of thick Fe underlayered AS. Interfacial reaction (separation of intermixed Co and Cu) could be observed at lower temperature for (200)-textured samples than for (111)-textured samples, which can be interpreted in terms of interdiffusion kinetics depending on the crystallographic orientation.

• Korean Journal of Materials Research
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• v.7 no.7
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• pp.587-591
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• 1997

RBS와 XRD를 이용하여 C o-Nb이중층 실리사이드와 구리 배선층간의 열적안정성에 관하여 조사하였다. Cu$_{3}$Si등의 구리 실리사이드는 열처리시 40$0^{\circ}C$정도에서 처음 형성되기 시작하였는데, 이 때 형성되는 구리 실리사이드는 기판의 상부에 존재하던 준안정한 CoSi의 분해시에 발생한 Si원자와의 반응에 의한 것이다. 한편, $600^{\circ}C$에서의 열처리 후에는 CoSi$_{2}$층을 확산.통과한 Cu원자와 기판 Si와의 반응에 의하여 CoSi$_{2}$/Si계면에도 구리 실리사이드가 성장하였는데, 이렇게 구리 실리사이드가 CoSi$_{2}$/Si 계면에 형성되는 것은 Cu원자의 확산속도가 여러 중간층에서 Si 원자의 확산속도 보다 더 빠르기 때문이다. 열처리 결과 최종적으로 얻어진 층구조는 CuNbO$_{3}$/Cu$_{3}$Si/Co-Nb합금층/Nb$_{2}$O$_{5}$CoSi$_{2}$/Cu$_{3}$Si/Si이었다. 여기서 상부에 형성된 CuNbO$_{3}$는 Cu원자가 Nb$_{2}$O$_{5}$및 Co-Nb합금층과 반응하여 기지조직의 입계에 석출되어 형성된 것이다.

• Proceedings of the Korean Magnestics Society Conference
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• 1996.10a
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• pp.28-29
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• 1996

• Proceedings of the Korean Magnestics Society Conference
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• 1997.11a
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• pp.20-21
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• 1997

• Proceedings of the Korean Magnestics Society Conference
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• 1993.03a
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• pp.18-19
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• 1993

• Proceedings of the Korean Magnestics Society Conference
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• 1995.05a
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• pp.86-87
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• 1995